Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DS3617 Search Results

    SF Impression Pixel

    DS3617 Price and Stock

    Square D by Schneider Electric JDS36175

    Molded Case Circuit Breaker 600V 175A | Square D JDS36175
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS JDS36175 Bulk 5 Weeks 1
    • 1 $3774.88
    • 10 $3586.14
    • 100 $3586.14
    • 1000 $3586.14
    • 10000 $3586.14
    		Get Quote

    Square D by Schneider Electric JDS36175T

    Molded Case Circuit Breaker 600V 175A | Square D JDS36175T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS JDS36175T Bulk 5 Weeks 1
    • 1 $3774.88
    • 10 $3586.14
    • 100 $3586.14
    • 1000 $3586.14
    • 10000 $3586.14
    		Get Quote

    DS3617 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DS36177D National Semiconductor Quad TRI-STATE MOS Memory I/O Registers Scan PDF
    DS36177N National Semiconductor Quad TRI-STATE MOS Memory I/O Registers Scan PDF
    DS36179 National Semiconductor Hex MOS Drivers Original PDF
    DS36179J National Semiconductor Hex MOS Drivers Original PDF
    DS36179J Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    DS36179J/A+ Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    DS36179N National Semiconductor Original PDF
    DS36179N Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    DS36179N/A+ Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    DS3617 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DM74366

    Abstract: DS16149J C1995 DM8096 DS16149 DS16179 DS36149 DS36149J DS36179 7553
    Text: DS16149 DS36149 DS16179 DS36179 Hex MOS Drivers General Description Features The DS16149 DS36149 and DS16179 DS36179 are Hex MOS drivers with outputs designed to drive large capacitive loads up to 500 pF associated with MOS memory systems PNP input transistors are employed to reduce input currents


    Original     		PDF DS16149 DS36149 DS16179 DS36179 DM74366 DS16149J C1995 DM8096 DS36149J 7553

    Untitled

    Abstract: No abstract text available
    Text: DMP56D0UFB Green Product Summary P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) -50V 6Ω @ VGS = -4 V 8Ω @ VGS = -2.5V ID TA = +25°C -200mA -160mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMP56D0UFB -200mA -160mA AEC-Q101 DS36175

    DS88L12

    Abstract: w1s dual transistor mm5704 lm325 Zener diode 10b3 MM5013 MM1103 DS0056 ds3674 MA2805
    Text: INTRODUCTION MOS memories present unique system and circuit challenges to the engineer since they require precise timing of input waveforms Since these inputs present large capacitive loads to drive circuits it is often that timing problems are not discovered until an entire system is constructed


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DMP56D0UV Green DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) -50V 6Ω @ VGS = -4 V 8Ω @ VGS = -2.5V ID TA = +25°C -160mA -120mA Descriptions This new generation MOSFET has been designed to minimize the


    Original     		PDF DMP56D0UV -160mA -120mA AEC-Q101 DS36174

    Untitled

    Abstract: No abstract text available
    Text: PSMAJ440A Green 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data • 400W Peak Pulse Power Dissipation • • Excellent Clamping Capability • • Fast Response Time • Lead-Free Finish; RoHS Compliant Notes 1 & 2 • Moisture Sensitivity: Level 1 per J-STD-020


    Original     		PDF PSMAJ440A J-STD-020 MIL-STD-202, DS36176

    P618SK

    Abstract: DMP6180SK3
    Text: DMP6180SK3 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TC = +25°C •  Low Input Capacitance 110mΩ @ VGS = -10V -14A  Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 140mΩ @ VGS = -4.5V -12A  Halogen and Antimony Free. “Green” Device (Note 3)


    Original     		PDF DMP6180SK3 AEC-Q101 DS36172 P618SK DMP6180SK3

    P618SK

    Abstract: DMP6180SK3-13 p618 FR 309 diode DMP6180SK3
    Text: DMP6180SK3 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TC = +25°C •  Low Input Capacitance 110m @ VGS = -10V -14A  Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 140m @ VGS = -4.5V -12A  Halogen and Antimony Free. “Green” Device (Note 3)


    Original     		PDF DMP6180SK3 AEC-Q101 DS36172 P618SK DMP6180SK3-13 p618 FR 309 diode DMP6180SK3

    Untitled

    Abstract: No abstract text available
    Text: AH1812 HIGH SENSIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH Description Pin Assignments The AH1812 is a high sensitivity micropower Omnipolar Hall effect switch IC with an open drain output. Designed for portable and battery powered equipment such as cellular phones and portable PCs, the


    Original     		PDF AH1812 AH1812 X1-DFN1216-4 DS36171

    DS1617

    Abstract: No abstract text available
    Text: Memory Support DS1617/DS3617 Bubble Memory Sense Amplifier G eneral D escription Featu res T h e DS1617 a n d th e DS3617 a re b u b b le m e m o ry s e n se a m p lifie rs th a t c o n v e rt lo w level s ig n a ls fro m m a g n e to -re s is tiv e d e te c to rs o f th e b u b b le m e m o ry in to T T L c o m p a t­


    OCR Scan     		PDF DS1617/DS3617 DS1617 DS3617

    MM4220DF/MM5220DF

    Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
    Text: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.


    OCR Scan     		PDF 360746lat MM4220DF/MM5220DF mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061

    MIC710

    Abstract: XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107
    Text: Master Index and Cross Reference Guide M IL-M -38510 Program and Chip Information Operational Amplifiers Voltage Regulators Interface Circuits Voltage Comparators Consumer Circuits Other Linear Circuits Package Information and Mounting Hardware Application Notes


    OCR Scan     		PDF 110-E77-20. MIC710 XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107

    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


    OCR Scan     		PDF

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


    OCR Scan     		PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401

    DS3615

    Abstract: NBM2256 tazer 74LS164 74LS165 NBC82853 MC811 microbus FAIU
    Text: December19£ p r e lim in a r y NBC82851256k-Bit Bubble Memory Controller General Description The NBC82851 is a dedicated bubble memory controller designed fo r use w ith N ational S e m iconductor’s NBM2256 256k-bit magnetic bubble memory. The control­


    OCR Scan     		PDF December19fi NBC82851256k-Bit NBC82851 NBM2256 256k-bit DS3615 tazer 74LS164 74LS165 NBC82853 MC811 microbus FAIU

    bubble memory

    Abstract: No abstract text available
    Text: p r e l im in a r y NBC82851256k-Bit Bubble Memory Controller General Description The NBC82851 is a dedicated bubble memory controller designed fo r use w ith N ational S em icon ducto r’s NBM2256 256k-bit m agnetic bubble memory. The control­ ler is designed so that a m inim um of interface circuitry is


    OCR Scan     		PDF NBC82851256k-Bit NBC82851 NBM2256 256k-bit bubble memory