256KBIT
Abstract: bubble memory bubble timing generator sync INS82851 NBM2256 256k FIFO
Text: INS82851 National Magnetic B uttle Memories Semiconductor PREVIEW INS82851 Bubble Memory Controller General Description Features The INS82851 is an NMOS con troller s pecifically programmed fo r use with National S em iconductor’s NBM2256 256K-bit magnetic bubble memory. The
|
OCR Scan
|
PDF
|
INS82851
NBM2256
256K-bit
40-pin
INS82851
256KBIT
bubble memory
bubble
timing generator sync
256k FIFO
|
NBM2256
Abstract: generator with magnetic permanent magnetic bubble memories bubble memory bubble memories
Text: Magnetic Bubble Memories « « iew NBM2256 Bubble Memory General Description National Semiconductor’s NBM2256 is a low cost, non-volatile, highly reliable solid state memory that uses magnetic bubble technology. The NBM2256 has the form of a dual-in-line package
|
OCR Scan
|
PDF
|
NBM2256
NBM2256
generator with magnetic permanent
magnetic bubble memories
bubble memory
bubble memories
|
DS3615
Abstract: NBM2256 tazer 74LS164 74LS165 NBC82853 MC811 microbus FAIU
Text: December19£ p r e lim in a r y NBC82851256k-Bit Bubble Memory Controller General Description The NBC82851 is a dedicated bubble memory controller designed fo r use w ith N ational S e m iconductor’s NBM2256 256k-bit magnetic bubble memory. The control
|
OCR Scan
|
PDF
|
December19fi
NBC82851256k-Bit
NBC82851
NBM2256
256k-bit
DS3615
tazer
74LS164
74LS165
NBC82853
MC811
microbus
FAIU
|
bubble memory
Abstract: No abstract text available
Text: p r e l im in a r y NBC82851256k-Bit Bubble Memory Controller General Description The NBC82851 is a dedicated bubble memory controller designed fo r use w ith N ational S em icon ducto r’s NBM2256 256k-bit m agnetic bubble memory. The control ler is designed so that a m inim um of interface circuitry is
|
OCR Scan
|
PDF
|
NBC82851256k-Bit
NBC82851
NBM2256
256k-bit
bubble memory
|
bubble memory
Abstract: bubble memories memory bubble magnetic bubble memories DS3615 NBM2256
Text: Magnetic Bubble Memories PREV,EW DS3615 Bubble Memory Function Driver General Description Features TTL com patible inputs Operates from tw o standard supplies: + 5V , + 12 V PNP inpu ts m inim ize loading B uilt-in voltage boost c irc u itry — does not require an extra
|
OCR Scan
|
PDF
|
DS3615
NBM2256
256K-bit
TheOS3615
bubble memory
bubble memories
memory bubble
magnetic bubble memories
|
bubble memory
Abstract: bubble
Text: Magnetic Bubble Memories prew ew DS3615 Bubble Memory Function Driver General Description Features TTL compatible inputs Operates from two standard supplies: +5V, +12V PNP inputs minimize loading Built-in voltage boost circuitry—does not require an extra
|
OCR Scan
|
PDF
|
DS3615
DS3615
NBM2256
256K-bit
TheOS3615
bubble memory
bubble
|
TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
|
OCR Scan
|
PDF
|
DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
|