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    Untitled

    Abstract: No abstract text available
    Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI ADVANCE INFORMATION Product Summary Features and Benefits RDS ON max ID max TA = 25°C 10mΩ @ VGS = 10V 12A 15mΩ @ VGS = 4.5V 9.5A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically


    Original     		PDF DMS3012SFG DS35441

    Untitled

    Abstract: No abstract text available
    Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 650V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically


    Original     		PDF DMS3012SFG DS35441

    Untitled

    Abstract: No abstract text available
    Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 30V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically


    Original     		PDF DMS3012SFG DS35441

    Untitled

    Abstract: No abstract text available
    Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Features Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 650V 15mΩ @ VGS = 4.5V • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically


    Original     		PDF DMS3012SFG DS35441

    Untitled

    Abstract: No abstract text available
    Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 30V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically


    Original     		PDF DMS3012SFG DS35441

    Untitled

    Abstract: No abstract text available
    Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI ADVANCE INFORMATION Product Summary Features and Benefits RDS ON max ID max TA = 25°C 10mΩ @ VGS = 10V 12A 15mΩ @ VGS = 4.5V 9.5A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically


    Original     		PDF DMS3012SFG DS35441