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    DMS3012SFG Price and Stock

    Diodes Incorporated DMS3012SFG-7

    MOSFET N-CH 30V 12A POWERDI3333
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    Diodes Incorporated DMS3012SFG-13

    MOSFET N-CH 30V 12A POWERDI3333
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    DMS3012SFG Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DMS3012SFG Diodes 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Original PDF
    DMS3012SFG Diodes 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Original PDF
    DMS3012SFG-13 Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A POWERDI Original PDF
    DMS3012SFG-7 Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N CH 30V POWERDI 3333-8 Original PDF

    DMS3012SFG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI ADVANCE INFORMATION Product Summary Features and Benefits RDS ON max ID max TA = 25°C 10mΩ @ VGS = 10V 12A 15mΩ @ VGS = 4.5V 9.5A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically


    Original     		PDF DMS3012SFG DS35441

    Untitled

    Abstract: No abstract text available
    Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 650V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically


    Original     		PDF DMS3012SFG DS35441

    Untitled

    Abstract: No abstract text available
    Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 30V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically


    Original     		PDF DMS3012SFG DS35441

    Untitled

    Abstract: No abstract text available
    Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Features Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 650V 15mΩ @ VGS = 4.5V • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically


    Original     		PDF DMS3012SFG DS35441

    Untitled

    Abstract: No abstract text available
    Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 30V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically


    Original     		PDF DMS3012SFG DS35441

    Untitled

    Abstract: No abstract text available
    Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI ADVANCE INFORMATION Product Summary Features and Benefits RDS ON max ID max TA = 25°C 10mΩ @ VGS = 10V 12A 15mΩ @ VGS = 4.5V 9.5A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically


    Original     		PDF DMS3012SFG DS35441

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502