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    DS3177 Search Results

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    DS3177 Price and Stock

    Rochester Electronics LLC DS3177+

    IC TRANSCEIVER 1/1 100CSBGA
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    DigiKey DS3177+ Bulk 1,369 5
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    Maxim Integrated Products DS3177+

    IC TRANSCEIVER 1/1 100CSBGA
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    Bristol Electronics DS3177+ 10
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    Quest Components DS3177+ 8
    • 1 $84.8
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    Rochester Electronics DS3177+ 1,369 1
    • 1 $62.35
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    Maxim Integrated Products DS3177N+

    IC TRANSCEIVER 1/1 100CSBGA
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    Maxim Integrated Products DS3177N+T

    IC TRANSCEIVER 1/1 100CSBGA
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    Maxim Integrated Products DS3177N+T&R

    IC TRANSCEIVER 1/1 100CSBGA
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    DS3177 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DS3177N+T Maxim Integrated Integrated Circuits (ICs) - Interface - Drivers, Receivers, Transceivers - IC TXRX DS3/E3 CSBGA Original PDF

    DS3177 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT BRIEF DS3177 DS3/E3 Single-Chip Transceiver FEATURES GENERAL DESCRIPTION The DS3177 combines a DS3/E3 framer and an LIU single-chip transceiver to interface to a DS3/E3 physical copper line. • •  APPLICATIONS  Routers and Switches Multiservice Access


    Original     		PDF DS3177 DS3177 DS3177N+ DS3177+

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT BRIEF DS3177 DS3/E3 Single-Chip Transceiver FEATURES GENERAL DESCRIPTION The DS3177 combines a DS3/E3 framer and an LIU single-chip transceiver to interface to a DS3/E3 physical copper line. APPLICATIONS Access Concentrators Routers and Switches


    Original     		PDF DS3177 DS3177 DS3177+ DS3177N+

    DMN26D0UFB4

    Abstract: DMN26D0UFB4-7B "MARKING CODE M1"
    Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max


    Original     		PDF DMN26D0UFB4 240mA 170mA AEC-Q101 DS31775 DMN26D0UFB4 DMN26D0UFB4-7B "MARKING CODE M1"

    sd12

    Abstract: No abstract text available
    Text: SD12 1 CHANNEL UNIDIRECTIONAL TVS Features Mechanical Data • 350 Watts Peak Pulse Power tp = 8x20 s • • IEC 61000-4-2 (ESD): Air – 30kV, Contact – 30kV • • IEC 61000-4-2 (ESD), HBM – 16kV ADVANCED INFORMATION • Case: SOD323 Case Material: Molded Plastic, "Green" Molding Compound. UL


    Original     		PDF OD323 J-STD-020 DS31772 sd12

    N4468LS

    Abstract: n4468 N4468L dmn4468lss
    Text: DMN4468LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 14mΩ @ VGS = 10V 10A 20mΩ @ VGS = 4.5V 8A • • • • • • • 30V Description and Applications Mechanical Data


    Original     		PDF DMN4468LSS AEC-Q101 DS31773 N4468LS n4468 N4468L dmn4468lss

    DMN26D0UFB4

    Abstract: "MARKING CODE M1" DFN1006H4-3
    Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.2V max


    Original     		PDF DMN26D0UFB4 AEC-Q101 DFN1006H4-3 J-STD-020 DS31775 DMN26D0UFB4 "MARKING CODE M1" DFN1006H4-3

    SBR05M60BLP

    Abstract: No abstract text available
    Text: SBR05M60BLP 0.5A SBR BRIDGE SUPER BARRIER RECTIFIER Features Mechanical Data • • • • • • • • • Ultra Low Leakage Current Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability 150ºC Operating Junction Temperature


    Original     		PDF SBR05M60BLP DFN3030-4 J-STD-020 MIL-STD-202, DS31771 SBR05M60BLP

    N4468LS

    Abstract: No abstract text available
    Text: DMN4468LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 14mΩ @ VGS = 10V 10A 20mΩ @ VGS = 4.5V 8A • • • • • • • N EW PRODU CT 30V Mechanical Data Description and Applications


    Original     		PDF DMN4468LSS AEC-Q101 DS31773 N4468LS

    max14574

    Abstract: MAX1786 MAX1788 MAX8899 DS1849 MAX16908 MAX4967 DS3610 max17018 max13487
    Text: Monitor Reports by Product: 1. Find the product of interest in the table below. Note the process and/or package for that product. 2. Use the "Back" button to return to the home page. 3. Select the process in the "Process Reliability" for the product of interest.


    Original     		PDF

    N4468LS

    Abstract: n4468 DMN4468LSS N4468L DMN4468LSS-13 J-STD-020D 601TEST
    Text: DMN4468LSS N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF DMN4468LSS AEC-Q101 J-STD-020D DS31773 N4468LS n4468 DMN4468LSS N4468L DMN4468LSS-13 J-STD-020D 601TEST

    SBR05M

    Abstract: SBR05M60BLP DFN3030-4 J-STD-020D
    Text: SBR05M60BLP 0.5A SBR BRIDGE SUPER BARRIER RECTIFIER Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • Mechanical Data • • Ultra Low Leakage Current Excellent High Temperature Stability Patented Super Barrier Rectifier Technology


    Original     		PDF SBR05M60BLP DFN3030-4 J-STD-020D MIL-STD-202, DS31771 SBR05M SBR05M60BLP DFN3030-4 J-STD-020D

    DMG9926UDM

    Abstract: esis power DMG9926UDM-7 J-STD-020D
    Text: DMG9926UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • Mechanical Data • • Low Gate Charge Low RDS ON : • 28mΩ @VGS = 4.5V • 32mΩ @VGS = 2.5V •


    Original     		PDF DMG9926UDM AEC-Q101 OT-26 J-STD-020D MIL-STD-202, DS31770 DMG9926UDM esis power DMG9926UDM-7 J-STD-020D

    N4468LS

    Abstract: n4468 DMN4468LSS DMN4468LSS-13 J-STD-020D
    Text: DMN4468LSS N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF DMN4468LSS AEC-Q101 J-STD-020D DS31773 N4468LS n4468 DMN4468LSS DMN4468LSS-13 J-STD-020D

    DFN1006-2

    Abstract: J-STD-020D SBR0240LP-7
    Text: SBR0240LP 0.2A SBR SURFACE MOUNT SUPER BARRIER RECTIFIER Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • Mechanical Data • • Ultra Low Forward Voltage Drop Superior Reverse Avalanche Capability


    Original     		PDF SBR0240LP AEC-Q101 DFN1006-2 J-STD-020D DS31774 DFN1006-2 J-STD-020D SBR0240LP-7

    N4468LS

    Abstract: No abstract text available
    Text: DMN4468LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ID max TA = +25°C • Low On-Resistance  Low Input Capacitance 14mΩ @ VGS = 10V 10A  Fast Switching Speed 20mΩ @ VGS = 4.5V 8A    Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2


    Original     		PDF DMN4468LSS AEC-Q101 DS31773 N4468LS

    DMN26D0UFB4-7B

    Abstract: No abstract text available
    Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0Ω @ VGS = 4.5V 240mA 6.0Ω @ VGS = 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN26D0UFB4 240mA 170mA AEC-Q101 DS31775 DMN26D0UFB4-7B

    "MARKING CODE M1"

    Abstract: DFN1006H4-3 DMN26D0UFB4
    Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V


    Original     		PDF DMN26D0UFB4 AEC-Q101 DFN1006H4-3 DS31775 "MARKING CODE M1" DFN1006H4-3 DMN26D0UFB4

    Untitled

    Abstract: No abstract text available
    Text: DMG9926UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features N EW PRODU CT • • • • • • Mechanical Data • • Low Gate Charge Low RDS ON : • 28mΩ @VGS = 4.5V • 32mΩ @VGS = 2.5V • 40mΩ @VGS = 1.8V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3)


    Original     		PDF DMG9926UDM AEC-Q101 OT-26 J-STD-020D MIL-STD-202, DS31770

    Untitled

    Abstract: No abstract text available
    Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0Ω @ VGS = 4.5V 240mA 6.0Ω @ VGS = 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMN26D0UFB4 240mA 170mA DS31775