DMN26D0UFB4
Abstract: DMN26D0UFB4-7B "MARKING CODE M1"
Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max
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Original
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PDF
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DMN26D0UFB4
240mA
170mA
AEC-Q101
DS31775
DMN26D0UFB4
DMN26D0UFB4-7B
"MARKING CODE M1"
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DMN26D0UFB4
Abstract: "MARKING CODE M1" DFN1006H4-3
Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.2V max
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Original
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PDF
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DMN26D0UFB4
AEC-Q101
DFN1006H4-3
J-STD-020
DS31775
DMN26D0UFB4
"MARKING CODE M1"
DFN1006H4-3
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DMN26D0UFB4-7B
Abstract: No abstract text available
Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0Ω @ VGS = 4.5V 240mA 6.0Ω @ VGS = 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMN26D0UFB4
240mA
170mA
AEC-Q101
DS31775
DMN26D0UFB4-7B
|
"MARKING CODE M1"
Abstract: DFN1006H4-3 DMN26D0UFB4
Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V
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Original
|
PDF
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DMN26D0UFB4
AEC-Q101
DFN1006H4-3
DS31775
"MARKING CODE M1"
DFN1006H4-3
DMN26D0UFB4
|
Untitled
Abstract: No abstract text available
Text: DMN26D0UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0Ω @ VGS = 4.5V 240mA 6.0Ω @ VGS = 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMN26D0UFB4
240mA
170mA
DS31775
|