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    DRAM ZIP Search Results

    DRAM ZIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation

    DRAM ZIP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original     		PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024

    3654P

    Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
    Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable


    Original     		PDF 16M-bit 64M-bit 68-pin) 88-pin) MB98C81013-10 MB98C81123-10 MB98C81233-10 MB98C81333-10 3654P DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    upd23c8000

    Abstract: upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
    Text: MENU INDEX QUESTIONNAIRE Dynamic RAM Dynamic RAM Module Static RAM Mask ROM Flash Memory COMBO Memory MCP Flash memory and SRAM Application Specific Memory Users Manual, Application Notes, Information Related References MENU Synchronous DRAM 128M synchronous DRAM -PC100 compliant64M synchronous DRAM -PC100 compliant64M synchronous DRAM (x32) -PC100 compliant16M synchronous DRAM (Revision A)


    Original     		PDF -PC100 compliant64M compliant16M 168-pin 16-bit, upd23c8000 upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000

    Untitled

    Abstract: No abstract text available
    Text: M T4C4003J lEG X 4 DRAM M IC R O N 1 MEG DRAM X 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT (Top View OPTIONS 20-Pin ZIP (DC-1) (DB-2) DQ1 DQ2 WE RAS A9 MARKING • Timing 70ns access 80ns access • Packages Plastic SOJ (300 mil) Plastic ZIP (350 mil)


    OCR Scan     		PDF T4C4003J 024-cycle 20/26-Pin 20-Pin MT4C4003J

    Untitled

    Abstract: No abstract text available
    Text: MT4C4003J 1 MEG X 4 DRAM I^IKZROfSI DRAM 1 MEG X 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT Top View • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply


    OCR Scan     		PDF MT4C4003J 225mW 024-cycle 20-Pin

    RRH cl2

    Abstract: BBU RRH
    Text: MT4C4001 J L 1 MEG X 4 DRAM I^IICRDN DRAM 1 MEG x 4 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J L) • Industry-standard x4 pinout, timing, functions and packages


    OCR Scan     		PDF MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J 20-Pin RRH cl2 BBU RRH

    Untitled

    Abstract: No abstract text available
    Text: [MICRON 256K DRAM MT4C4258 X 4 DRAM 256K X 4 DRAM DRAM STATIC-COLUMN FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical


    OCR Scan     		PDF MT4C4258 175mW 512-cycle 20-Pin MT4C4256

    Untitled

    Abstract: No abstract text available
    Text: MICRON 256K DRAM MT4C4258 X 4 DRAM 256K X 4 DRAM DRAM STATIC COLUMN FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V +10% power supply • Low power, 3mW standby; 175mW active, typical


    OCR Scan     		PDF MT4C4258 175mW 512-cycle 20-Pin 100ns

    DA 11341

    Abstract: B1374 S2026 MT4C4258
    Text: MICRON MT4C4258 256K X 4 DRAM I DRAM 256K X 4 DRAM DRAM STATIC COLUMN FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175m W active, typical


    OCR Scan     		PDF MT4C4258 512-cycle 20-Pin MT4C42S0 C1994. DA 11341 B1374 S2026

    MT4C4258

    Abstract: No abstract text available
    Text: |v i i c : r o n 256K 256K DRAM MT4C4258 X 4 DRAM 4 DRAM X DRAM STATIC-COLUMN FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions and packages • High-performance CM OS silicon-gate process • Single +5V ±10% power supply


    OCR Scan     		PDF MT4C4258 175mW 512-cycle 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: MT4C4001 J L 1 MEG X 4 DRAM (M IC R O N DRAM 1 MEG x 4 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J L) • Industry-standard x4 pinout, timing, functions and packages


    OCR Scan     		PDF MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J MT4C4001J 275mW 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MT4C8512/3 5 1 2 K x 8 WIDE DRAM |U|IC=RON 512K WIDE DRAM X 8 DRAM WIDE DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, tim ing, functions and packages • Address entry: ten row-addresses, nine columnaddresses


    OCR Scan     		PDF MT4C8512/3 024-cycle MT4C8513 28-Pin DQ2512/3

    Untitled

    Abstract: No abstract text available
    Text: MT4C1006J 4 MEG X 1 DRAM M IC R O N DRAM 4 MEG X 1 DRAM DRAM STATIC-COLUMN FEATURES • Industry-standard xl pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single+5V ±10% power supply • Low power, 3mW standby; 275mW active, typical


    OCR Scan     		PDF MT4C1006J 275mW 024-cycle 20-Pin

    MT4C4001J

    Abstract: MT4C4001JDJ-6
    Text: MICRON TECHNOLOGY INC SSE » • b lllS H S MICRON B 00042^4 W «MRN MT4C4001J 1 MEG X 4 DRAM TECHNOLOGY. INC DRAM 1 MEG X 4 DRAM DRAM FAST PAGE MODE FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process


    OCR Scan     		PDF bill541 00042T4 MT4C4001J -T-tt-tt-18 225mW 024-cycle MT4C4001J MT4C4001JDJ-6

    TFG11

    Abstract: No abstract text available
    Text: I^ IIC R O N MT4C1026 X 1 DRAM 1 MEG DRAM 1 MEG X 1 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT Top View • Industry-standard x l pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply


    OCR Scan     		PDF MT4C1026 175mW 512-cycle 18-Pin 20-Pin TFG11

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY |W|IC=RC3N 512K M T4C 8 512/3 L WIDE DRAM X 8 512K x 8 DRAM WIDE DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View OPTIONS 28-Pin ZIP (DB-3) 28-Pin SOJ (DC-4) MARKING • Timing 60ns access 70ns access 80ns access • MASKED WRITE


    OCR Scan     		PDF MT4C8513 024-cycle 128ms 350mW 28-Pin MT4C8512/3 WT4C6512/3 S1993,

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N 512K WIDE DRAM MT4C8512/3 L WIDE DRAM X 8 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View OPTIONS • M ASKED W RITE Not available Available • Packages Plastic SOJ (400 mil) Plastic TSOP (400 mil) Plastic ZIP (375 mil)


    OCR Scan     		PDF MT4C8512/3 28-Pin

    Untitled

    Abstract: No abstract text available
    Text: MT4C1006J 4 MEG X 1 DRAM fU |IC =R O N DRAM 4 MEG X 1 DRAM DRAM STATIC COLUMN FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 225mW active, typical


    OCR Scan     		PDF MT4C1006J 225mW 024-cycle 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N 1 MEG DRAM MT4C1026 X 1 DRAM 1 MEG X 1 DRAM DRAM STATIC COLUMN FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical


    OCR Scan     		PDF MT4C1026 175mW 512-cycle 18-Pin 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: MICRON 256K 256K DRAM X MT4C4258 X 4 DRAM 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT (Top View • Industry-standard x4 pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3m W standby; 175mW active, typical


    OCR Scan     		PDF MT4C4258 175mW 512-cycle 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: MT4C1004J 4 MEG X 1 DRAM |U |IC = R O N 4 MEG X 1 DRAM DRAM DRAM FAST PAGE MODE FEATURES • Industry standard xl pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 225mW active, typical


    OCR Scan     		PDF MT4C1004J 225mW 024-cycle 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: MT4C1006J 4 MEG X 1 DRAM [MICRON DRAM 4 MEG X 1 DRAM DRAM STATI C-COLUMN FEATURES • Industry-standard x l pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply • Low power, 3mW standby; 275mW active, typical


    OCR Scan     		PDF MT4C1006J 275mW 024-cycle 20-Pin

    cc680

    Abstract: No abstract text available
    Text: M IC R O N 256K DRAM MT4C4258 X 4 DRAM 256K x 4 DRAM • DRAM STATIC COLUMN FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CM O S silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical


    OCR Scan     		PDF MT4C4258 175mW 512-cycle 20-Pin C1992, MUC4258 cc680