DRAM ZIP Search Results

DRAM ZIP Result Highlights (5)

Part	Manufacturer	Description
TMS4030JL	Rochester Electronics LLC	TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22
4164-15FGS/BZA	Rochester Electronics LLC	4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA)
4164-12JDS/BEA	Rochester Electronics LLC	4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA)
4164-15JDS/BEA	Rochester Electronics LLC	4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA)
UPD48011318FF-FH16-FF1-A	Renesas Electronics Corporation	Low Latency DRAM, T-LBGA, /Tray

DRAM ZIP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
3524CP Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024 Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS	Original	HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024	PDF
3654P Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable	Original	16M-bit 64M-bit 68-pin) 88-pin) MB98C81013-10 MB98C81123-10 MB98C81233-10 MB98C81333-10 3654P DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram	PDF
toshiba toggle mode nand Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit	Original	64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP	PDF
upd23c8000 Abstract: upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000 Text: MENU INDEX QUESTIONNAIRE Dynamic RAM Dynamic RAM Module Static RAM Mask ROM Flash Memory COMBO Memory MCP Flash memory and SRAM Application Specific Memory Users Manual, Application Notes, Information Related References MENU Synchronous DRAM 128M synchronous DRAM -PC100 compliant64M synchronous DRAM -PC100 compliant64M synchronous DRAM (x32) -PC100 compliant16M synchronous DRAM (Revision A)	Original	-PC100 compliant64M compliant16M 168-pin 16-bit, upd23c8000 upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000	PDF
Untitled Abstract: No abstract text available Text: M T4C4003J lEG X 4 DRAM M IC R O N 1 MEG DRAM X 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT (Top View OPTIONS 20-Pin ZIP (DC-1) (DB-2) DQ1 DQ2 WE RAS A9 MARKING • Timing 70ns access 80ns access • Packages Plastic SOJ (300 mil) Plastic ZIP (350 mil)	OCR Scan	T4C4003J 024-cycle 20/26-Pin 20-Pin MT4C4003J	PDF
Untitled Abstract: No abstract text available Text: MT4C4003J 1 MEG X 4 DRAM I^IKZROfSI DRAM 1 MEG X 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT Top View • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply	OCR Scan	MT4C4003J 225mW 024-cycle 20-Pin	PDF
RRH cl2 Abstract: BBU RRH Text: MT4C4001 J L 1 MEG X 4 DRAM I^IICRDN DRAM 1 MEG x 4 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J L) • Industry-standard x4 pinout, timing, functions and packages	OCR Scan	MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J 20-Pin RRH cl2 BBU RRH	PDF
Untitled Abstract: No abstract text available Text: [MICRON 256K DRAM MT4C4258 X 4 DRAM 256K X 4 DRAM DRAM STATIC-COLUMN FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical	OCR Scan	MT4C4258 175mW 512-cycle 20-Pin MT4C4256	PDF
Untitled Abstract: No abstract text available Text: MICRON 256K DRAM MT4C4258 X 4 DRAM 256K X 4 DRAM DRAM STATIC COLUMN FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V +10% power supply • Low power, 3mW standby; 175mW active, typical	OCR Scan	MT4C4258 175mW 512-cycle 20-Pin 100ns	PDF
DA 11341 Abstract: B1374 S2026 MT4C4258 Text: MICRON MT4C4258 256K X 4 DRAM I DRAM 256K X 4 DRAM DRAM STATIC COLUMN FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175m W active, typical	OCR Scan	MT4C4258 512-cycle 20-Pin MT4C42S0 C1994. DA 11341 B1374 S2026	PDF
MT4C4258 Abstract: No abstract text available Text: \|v i i c : r o n 256K 256K DRAM MT4C4258 X 4 DRAM 4 DRAM X DRAM STATIC-COLUMN FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions and packages • High-performance CM OS silicon-gate process • Single +5V ±10% power supply	OCR Scan	MT4C4258 175mW 512-cycle 20-Pin	PDF
Untitled Abstract: No abstract text available Text: MT4C4001 J L 1 MEG X 4 DRAM (M IC R O N DRAM 1 MEG x 4 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J L) • Industry-standard x4 pinout, timing, functions and packages	OCR Scan	MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J MT4C4001J 275mW 20-Pin	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY MT4C8512/3 5 1 2 K x 8 WIDE DRAM \|U\|IC=RON 512K WIDE DRAM X 8 DRAM WIDE DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, tim ing, functions and packages • Address entry: ten row-addresses, nine columnaddresses	OCR Scan	MT4C8512/3 024-cycle MT4C8513 28-Pin DQ2512/3	PDF
Untitled Abstract: No abstract text available Text: MT4C1006J 4 MEG X 1 DRAM M IC R O N DRAM 4 MEG X 1 DRAM DRAM STATIC-COLUMN FEATURES • Industry-standard xl pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single+5V ±10% power supply • Low power, 3mW standby; 275mW active, typical	OCR Scan	MT4C1006J 275mW 024-cycle 20-Pin	PDF

MT4C4001J Abstract: MT4C4001JDJ-6 Text: MICRON TECHNOLOGY INC SSE » • b lllS H S MICRON B 00042^4 W «MRN MT4C4001J 1 MEG X 4 DRAM TECHNOLOGY. INC DRAM 1 MEG X 4 DRAM DRAM FAST PAGE MODE FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process	OCR Scan	bill541 00042T4 MT4C4001J -T-tt-tt-18 225mW 024-cycle MT4C4001J MT4C4001JDJ-6	PDF
TFG11 Abstract: No abstract text available Text: I^ IIC R O N MT4C1026 X 1 DRAM 1 MEG DRAM 1 MEG X 1 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT Top View • Industry-standard x l pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply	OCR Scan	MT4C1026 175mW 512-cycle 18-Pin 20-Pin TFG11	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY \|W\|IC=RC3N 512K M T4C 8 512/3 L WIDE DRAM X 8 512K x 8 DRAM WIDE DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View OPTIONS 28-Pin ZIP (DB-3) 28-Pin SOJ (DC-4) MARKING • Timing 60ns access 70ns access 80ns access • MASKED WRITE	OCR Scan	MT4C8513 024-cycle 128ms 350mW 28-Pin MT4C8512/3 WT4C6512/3 S1993,	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY M IC R O N 512K WIDE DRAM MT4C8512/3 L WIDE DRAM X 8 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View OPTIONS • M ASKED W RITE Not available Available • Packages Plastic SOJ (400 mil) Plastic TSOP (400 mil) Plastic ZIP (375 mil)	OCR Scan	MT4C8512/3 28-Pin	PDF
Untitled Abstract: No abstract text available Text: MT4C1006J 4 MEG X 1 DRAM fU \|IC =R O N DRAM 4 MEG X 1 DRAM DRAM STATIC COLUMN FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 225mW active, typical	OCR Scan	MT4C1006J 225mW 024-cycle 20-Pin	PDF
Untitled Abstract: No abstract text available Text: M IC R O N 1 MEG DRAM MT4C1026 X 1 DRAM 1 MEG X 1 DRAM DRAM STATIC COLUMN FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical	OCR Scan	MT4C1026 175mW 512-cycle 18-Pin 20-Pin	PDF
Untitled Abstract: No abstract text available Text: MICRON 256K 256K DRAM X MT4C4258 X 4 DRAM 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT (Top View • Industry-standard x4 pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3m W standby; 175mW active, typical	OCR Scan	MT4C4258 175mW 512-cycle 20-Pin	PDF
Untitled Abstract: No abstract text available Text: MT4C1004J 4 MEG X 1 DRAM \|U \|IC = R O N 4 MEG X 1 DRAM DRAM DRAM FAST PAGE MODE FEATURES • Industry standard xl pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 225mW active, typical	OCR Scan	MT4C1004J 225mW 024-cycle 20-Pin	PDF
Untitled Abstract: No abstract text available Text: MT4C1006J 4 MEG X 1 DRAM [MICRON DRAM 4 MEG X 1 DRAM DRAM STATI C-COLUMN FEATURES • Industry-standard x l pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply • Low power, 3mW standby; 275mW active, typical	OCR Scan	MT4C1006J 275mW 024-cycle 20-Pin	PDF
cc680 Abstract: No abstract text available Text: M IC R O N 256K DRAM MT4C4258 X 4 DRAM 256K x 4 DRAM • DRAM STATIC COLUMN FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CM O S silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical	OCR Scan	MT4C4258 175mW 512-cycle 20-Pin C1992, MUC4258 cc680	PDF

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DRAM ZIP Search Results

DRAM ZIP Result Highlights (5)

DRAM ZIP Datasheets Context Search

3524CP

3654P

toshiba toggle mode nand

upd23c8000

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RRH cl2

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DA 11341

MT4C4258

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MT4C4001J

TFG11

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cc680