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    DRAM BGA TRAY Search Results

    DRAM BGA TRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    MPC860PZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy

    DRAM BGA TRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Samsung EOL

    Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
    Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM


    Original     		PDF 288-576Mb 10-20ns 18-72Mb 64Kb-16Mb 8Mb-64Mb 16Mb-512Mb 16Mb-1Gb 256Mb-2Gb 200Mhz -40oC Samsung EOL IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E

    Automotive Product Selector Guide

    Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
    Text: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from


    Original     		PDF

    is62c51216al

    Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
    Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital


    Original     		PDF

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    IS43LR32640

    Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
    Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive, (ii) communications, (iii) digital consumer, and (iv) industrial/medical/military. These key markets all require high quality and reliability, extended temperature ranges, and long-term support. Our primary products are high speed and


    Original     		PDF i1-44-42218428 IS43LR32640 is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168

    300b tube

    Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
    Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM


    Original     		PDF FBGA-11 24-SOJ-300 -SOJ-300 -TSOP2-300AF -SOJ-300B 28-SOJ-300 28-SOJ-300A 28-SOJ-400 300b tube 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64

    CM16C550P

    Abstract: 4.7 uf/50v smd capacitor sad1 diode smd NPN CD100 transistor SPER 1A1 C4 0.1 uf/50v smd capacitor DIALCO C01100 cm16c550pe TRAY DAEWON TSOP
    Text: Rev. 2.1 i960 Rx I/O Processor Design Guide November, 1997 Order Number: 273004-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of


    Original     		PDF 74ALS245A 74ALS245AD-T 74AS244 SN74AS244DWR 74F07 N74F07AD 74F04 74F04D 74F32 SN74F32DR CM16C550P 4.7 uf/50v smd capacitor sad1 diode smd NPN CD100 transistor SPER 1A1 C4 0.1 uf/50v smd capacitor DIALCO C01100 cm16c550pe TRAY DAEWON TSOP

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    S72NS128PD0

    Abstract: MCP NAND DDR S29NS-P S72NS256PD0 S72NS512PD0 S72NS-P tray bga 8x8 S72NS512PE0KFFGG
    Text: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet


    Original     		PDF S72NS-P S72NS128PD0 MCP NAND DDR S29NS-P S72NS256PD0 S72NS512PD0 tray bga 8x8 S72NS512PE0KFFGG

    12X12 POP PACKAGE

    Abstract: 2118 FAMILY DRAM block diagram laser weapon 2118 FAMILY DRAM
    Text: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet


    Original     		PDF S72NS-P 12X12 POP PACKAGE 2118 FAMILY DRAM block diagram laser weapon 2118 FAMILY DRAM

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    HN58V1001TI-25E

    Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
    Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,


    Original     		PDF REJ01C0001-1000 HN58V1001TI-25E R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI

    ball 128 mcp

    Abstract: MCP NAND, DRAM, NOR LJ512 S29NS-P S72NS128PD0 S72NS256PD0 S72NS512PD0 S72NS-P MCP NAND D3-D16
    Text: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet


    Original     		PDF S72NS-P ball 128 mcp MCP NAND, DRAM, NOR LJ512 S29NS-P S72NS128PD0 S72NS256PD0 S72NS512PD0 MCP NAND D3-D16

    S25FL256

    Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
    Text: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:


    Original     		PDF 128Mb 256Mb 512Mb 43715C S25FL256 S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K

    ADQ12

    Abstract: ADQ14 Multi-Chip Package MEMORY F12 MARK MICRON mcp NS512 S29NS-N S72NS-N 7d8l S72NS512ND0
    Text: S72NS-N Based MCPs Stacked Multi-Chip Product MCP MirrorBitTM Flash Memory & DRAM 128 Mb (8 M x 16 bit)/256 Mb (16 M x 16 bit), 110nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/Write, Burst Mode Flash Memory and 128/256-Mb (8/16-M x 16-bit) DDR DRAM


    Original     		PDF S72NS-N 110nm 128/256-Mb 8/16-M 16-bit) S72NS128 256ND0 ADQ12 ADQ14 Multi-Chip Package MEMORY F12 MARK MICRON mcp NS512 S29NS-N 7d8l S72NS512ND0

    ADQ11

    Abstract: 12X12 POP PACKAGE ADQ14 d3d16
    Text: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet


    Original     		PDF S72NS-P ADQ11 12X12 POP PACKAGE ADQ14 d3d16

    SB865A

    Abstract: SB866A ddr2 PLL JESD82 SSTUx32864 SSTU32868 JEDEC DDR2-400 2rx8 SB866 SN74SSTUB32866
    Text: Application Report SCAA101 – March 2009 DDR2 Memory Interface Clocks and Registers – Overview Christian Schmoeller . CDC - Clock Distribution Circuits ABSTRACT This application report gives an overview of the existing JEDEC DDR2 Register and


    Original     		PDF SCAA101 SB865A SB866A ddr2 PLL JESD82 SSTUx32864 SSTU32868 JEDEC DDR2-400 2rx8 SB866 SN74SSTUB32866

    S72NS256PD0

    Abstract: S72NS512PD0 S72NS-P S29NS-P S72NS128PD0
    Text: S72NS-P Based MCPs/PoPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P Based MCPs/PoPs Cover Sheet


    Original     		PDF S72NS-P S72NS256PD0 S72NS512PD0 S29NS-P S72NS128PD0

    S72XS128RD0AHBHE

    Abstract: s72xs128 spansion top marking S29VS S72XS S29XS ADQ14 spansion marking date code
    Text: S72XS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-only, Address-High, AddressLow, Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128 Mb (8M x 16 bit) DDR DRAM on Split Bus S72XS-R Based MCPs Cover Sheet


    Original     		PDF S72XS-R 8/16M S72XS128RD0AHBHE s72xs128 spansion top marking S29VS S72XS S29XS ADQ14 spansion marking date code

    S72VS256RE0

    Abstract: S72VS128RD0 S29VS S72VS-R SD-M128 SD-M256
    Text: S72VS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-Only, Address-Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72VS-R Based MCPs Cover Sheet Data Sheet (Advance Information)


    Original     		PDF S72VS-R 8/16M S72VS256RE0 S72VS128RD0 S29VS SD-M128 SD-M256

    DRAM11

    Abstract: ALN186 186-ball OB18-6
    Text: S72NS-S Based MCPs MirrorBit Eclipse Flash Memory and DRAM 2 Gb 128M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/ Write, Burst Mode Flash Memory 512 Mb (32M x 16 bit) DDR DRAM on Split Bus S72NS-S Based MCPs Cover Sheet Data Sheet (Advance Information)


    Original     		PDF S72NS-S DRAM11 ALN186 186-ball OB18-6

    S72XS128RD0AHBHE

    Abstract: S72XS256RD0AHBJE
    Text: S72XS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-only, Address-High, AddressLow, Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128 Mb (8M x 16 bit) DDR DRAM on Split Bus S72XS-R Based MCPs Cover Sheet


    Original     		PDF S72XS-R 8/16M S72XS128RD0AHBHE S72XS256RD0AHBJE

    Untitled

    Abstract: No abstract text available
    Text: S72NS-S Based MCPs MirrorBit Eclipse Flash Memory and DRAM 2 Gb 128M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/ Write, Burst Mode Flash Memory 512 Mb (32M x 16 bit) DDR DRAM on Split Bus S72NS-S Based MCPs Cover Sheet Data Sheet (Advance Information)


    Original     		PDF S72NS-S