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    DRAM 8MX32 TSOP Search Results

    DRAM 8MX32 TSOP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation

    DRAM 8MX32 TSOP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DRAM 8Mx32 tsop

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F803BS-L 8Mx32 SODIMM 8Mx32 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F803BS-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF KMM332F803BS-L 8Mx32 KMM332F803BS-L KMM332F803B 8Mx32bits KMM332F803B 72-pin DRAM 8Mx32 tsop

    KMM5328004CSW

    Abstract: KMM5328004CSWG samsung 64mb dram module 72-pin simm
    Text: DRAM MODULE KMM5328004CSW/CSWG 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5328004CSW/CSWG DRAM MODULE KMM5328004CSW/CSWG


    Original     		PDF KMM5328004CSW/CSWG 8Mx32 4Mx16 KMM5328004CSW/CSWG 4Mx16, KMM5328004C 8Mx32bits KMM5328004C KMM5328004CSW KMM5328004CSWG samsung 64mb dram module 72-pin simm

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5328000CSW/CSWG 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5328000CSW/CSWG DRAM MODULE KMM5328000CSW/CSWG


    Original     		PDF KMM5328000CSW/CSWG 8Mx32 4Mx16 KMM5328000CSW/CSWG 4Mx16, KMM5328000C 8Mx32bits 4Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53210804CY0/CT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53210804CY0/CT0-C DRAM MODULE M53210804CY0/CT0-C


    Original     		PDF M53210804CY0/CT0-C 8Mx32 4Mx16 M53210804CY0/CT0-C 4Mx16, 8Mx32bits 4Mx16bits

    K4E641611C

    Abstract: No abstract text available
    Text: DRAM MODULE M53230804CY0/CT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53230804CY0/CT0-C DRAM MODULE M53230804CY0/CT0-C


    Original     		PDF M53230804CY0/CT0-C 8Mx32 4Mx16 M53230804CY0/CT0-C 4Mx16, 8Mx32bits K4E641611C

    8Mx32

    Abstract: No abstract text available
    Text: 8M x 32 Bit 3.3V UNBUFFERED EDO SODIMM Extended Data Out EDO DRAM SMALL OUTLINE DIMM 3280AsEDM4G04TC 72 Pin 8Mx32 EDO SODIMM Unbuffered, 4k Refresh, 3.3V Pin Assignment General Description The 3280AsEDM4G04TC is a 8Mx32 bit, 4 chip, 3.3V, 72 Pin SODIMM module consisting of (4) 8Mx8


    Original     		PDF 3280AsEDM4G04TC 8Mx32 DS584-0

    328006EDM4G04TC

    Abstract: 4096-cycle
    Text: 8M x 32 Bit 3.3V UNBUFFERED EDO SODIMM Extended Data Out EDO DRAM SMALL OUTLINE DIMM 32800sEDM4G04TC 72 Pin 8Mx32 EDO SODIMM Unbuffered, 4k Refresh, 3.3V Pin Assignment General Description The 32800sEDM4G04TC is a 8Mx32 bit, 4 chip, 3.3V, 72 Pin SODIMM module consisting of (4) 4Mx16


    Original     		PDF 32800sEDM4G04TC 8Mx32 DS613-0 328006EDM4G04TC 4096-cycle

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332V803BS-L 8Mx32 SODIMM 8Mx8 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332V803BS-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF KMM332V803BS-L 8Mx32 KMM332V803BS-L KMM332V803B 8Mx32bits KMM332V803B 72-pin

    4MX16

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332V804BS/BZ-L 8Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332V804BS/BZ-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF KMM332V804BS/BZ-L 8Mx32 4Mx16 KMM332V804BS/BZ-L 4MX16, KMM332V804B 8Mx32bits KMM332V804B

    8Mx32 dram simm

    Abstract: No abstract text available
    Text: DRAM MODULE M53210804BY0/BT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53210804BY0/BT0-C Revision History Version 0.0 (Sept., 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53210804BY0/BT0-C 8Mx32 4Mx16 M53210804BY0/BT0-C 4Mx16, 8Mx32bits 8Mx32 dram simm

    HY5117400A

    Abstract: No abstract text available
    Text: HYM532810A M-Series 8Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM532810AM/ASLM/ATM/ASLTM are Tin-Lead plated and


    Original     		PDF HYM532810A 8Mx32-bit 32-bit HY5117400A HYM532810AM/ASLM/ATM/ASLTM HYM532810AMG/ALMG/ATMG/ALTMG 1CF13-10-DEC94 72pin

    8Mx32 dram simm

    Abstract: 8mx32 simm 72 pin
    Text: DRAM MODULE M53230804BY0/BT0-C 4Byte 8Mx32 SIMM PDpin 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53230804BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53230804BY0/BT0-C 8Mx32 4Mx16 M53230804BY0/BT0-C 4Mx16, 8Mx32bits 8Mx32 dram simm 8mx32 simm 72 pin

    4MX16

    Abstract: KM416V4104BS
    Text: DRAM MODULE KMM332F804BS/BZ-L 8Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F804BS/BZ-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF KMM332F804BS/BZ-L 8Mx32 4Mx16 KMM332F804BS/BZ-L 4MX16, KMM332F804B 8Mx32bits KMM332F804B KM416V4104BS

    IS42VM16160D-8TLI

    Abstract: IS42VM83200D
    Text: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Advanced Information OCTOBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42VM83200D IS42VM16160D IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb IS42VM16160D-8TLI

    IS42VM83200D

    Abstract: No abstract text available
    Text: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Advanced Information FEBRUARY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42VM83200D IS42VM16160D IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb

    SM83200D

    Abstract: IS42RM32800D IS42SM16160D-7BL IS42RM16160D-7BLI IS42SM83200D IS42SM32800D IS42SM16160D-7BLI M3100
    Text: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES OCTOBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42SM83200D IS42SM16160D IS42SM32800D IS42RM83200D IS42RM16160D IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb SM83200D IS42RM32800D IS42SM16160D-7BL IS42RM16160D-7BLI IS42SM32800D IS42SM16160D-7BLI M3100

    IS42RM32800D

    Abstract: No abstract text available
    Text: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES OCTOBER 2009 •฀ Fully synchronous; all signals referenced to a positive clock edge •฀ Internal bank for hiding row access and precharge


    Original     		PDF IS42SM83200D IS42SM16160D IS42SM32800D IS42RM83200D IS42RM16160D IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb IS42RM32800D

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F803BS-L 8Mx32 SODIMM 8Mx32 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F803BS-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM332F803BS-L 8Mx32 KMM332F803BS-L KMM332F803B 8Mx32bits 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F803BS-L 8Mx32 SODIMM 8Mx32 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F803BS-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM332F803BS-L 8Mx32 KMM332F803BS-L KMM332F803B 8Mx32bits 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F804BS/BZ-L 8Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F804BS/BZ-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM332F804BS/BZ-L 8Mx32 4Mx16 KMM332F804BS/BZ-L 4MX16, KMM332F804B 8Mx32bits KMM332F804B

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332V803BS-L 8Mx32 SODIMM 8Mx8 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332V803BS-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM332V803BS-L 8Mx32 KMM332V803BS-L KMM332V803B 8Mx32bits KMM332V803B KMM332V803BS-L5/L6 cycles/128ms

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332V803BS-L 8Mx32 SODIMM 8Mx8 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332V803BS-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM332V803BS-L 8Mx32 KMM332V803BS-L KMM332V803B 8Mx32bits 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332V804BS/BZ-L 8Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332V804BS/BZ-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM332V804BS/BZ-L 8Mx32 4Mx16 KMM332V804BS/BZ-L 4MX16, KMM332V804B 8Mx32bits KMM332V804B

    Untitled

    Abstract: No abstract text available
    Text: » « Y I I H D W I HYM532810A M-Series 8Mx32-blt CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SQJ or TSOPfl on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM532810A 8Mx32-blt 32-bit HY5117400A HYM532810AM/ASLM/ATM/ASLTM HYM53281OAMG/ALMG/ATMG/ALTMG 72pin HYM53281OA/AL HYM532810AT/ALT