LT011
Abstract: LT011PS
Text: SHARP ELEK/ HELEC 17E DIV D • fllfiDTTfl DQD37Ela 7 ■ LT011PS ~y ~y y" ~x ~ . * ' xr ~x~ * V y Features • Compact diameter: 5.6 mm • Wavelength: 840nm • Single transverse mode Applications • Measument instruments • Analysis instruments Absolute Maximum Ratings
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DQQ372fci
LT011PS
840nm
LT011
LT011PS
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Untitled
Abstract: No abstract text available
Text: SIPEX CORP bDE D C ifN A V U IU W V * Cofporafton▼ • 8263711 DQD37'1S 1 37 « S P X ^ p r . - _,v T ^ S l-O T C M SIGNAL PROCESSING EXCELLENCE SP8120/8121 Series* Monolithic, 12-Bit Data Acquisition System FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ C om plete Monolithic 8-Channel,
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DQD37
SP8120/8121
12-Bit
100kHz
16-Bit
SP8121
12-Bits
32-pin
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transistor YA
Abstract: Solitron Devices pnp, 200 V, 20A 2N5675 code Transistor ya
Text: SOLITRON DEVICES INC 4fiE D • a3bflbOE DQD37b7 ^olitron Devices, Inc. S P E C I F I C A T I O N S N0” "Hb ■ S O D T 33 17 2N5675 TYPE: PNP SILICON TRANSISTOR MAXIMUM RATINGS CASE: T 0 " 5 Voltage, Collector to Base VCB0 .
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DQD37b7
2N5675
-10mA
-125V
-500mA
200mA
-50mA
10MHz
transistor YA
Solitron Devices pnp, 200 V, 20A
2N5675
code Transistor ya
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Untitled
Abstract: No abstract text available
Text: EL7104C/EL7114C Features G eneral D escription • Industry standard driver replacement • Improved response times • Matched rise and fall times • Reduced clock skew • Low output impedance • Low input capacitance • High noise immunity • Improved clocking rate
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EL7104C/EL7114C
EL7104C/EL7114C
TC-4420/29
L7104
DQD37m
00D371S
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HY628100
Abstract: No abstract text available
Text: HY 628100 S e rie s •HYUNDAI 128KX 8-bit CMOS SRAM DESCRIPTION The HY628100 is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628100
128Kx
85/100/120ns
1DD01-11-MAY94
ML750Ã
GD0373b
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LT026MD
Abstract: sharp lt026
Text: MELEC DIV ELEK/ S H A R P HE 1 • ai»Q 71 i 0003705 T ■ LT026MD/MF Features • Small astigmatic distance less than 10 ¿¿m • W avelength: 780nm • Single transverse mode Applications • G eneral purpose laser printers • Information processing equipm ent
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LT026MD/MF
780nm
QG37BD
j-3-00
Q3731
LT026MD
sharp lt026
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adjustable regulator high voltage
Abstract: ROE capacitor 220 6MV1500GX LX8586 LX8586-00CP LX8586A LX8586A-00CP LX8586A-00CV PC15
Text: L IN Doc #; 8586 L X 8 5 8 6 /8 5 8 6 A 6A T he I nfi nite P ower I n nova t i on of Low P D r o p o u t P o s itiv e A djustab le R e g u la t o r r e l i m i n a r y DESCRIPTION The LX8586/86A are lo w dropout three term inal adjustable regulators w ith a
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LX8586/8586A
LX8586/86A
LX8586A
LX8586
lx8586/86a
lx858Ã
adjustable regulator high voltage
ROE capacitor 220
6MV1500GX
LX8586-00CP
LX8586A-00CP
LX8586A-00CV
PC15
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photodetector
Abstract: PD142PI
Text: SHARP ELEK/ flELEC DIV 17E D • ûlâCmfl OQGBTMû h Photodetectors xm Pickup Photodetectors for CD Players and video disc players We are manufacturing six-partition photodiodes for 3 beams PD168PI, PD663PI, PD666P! and four-partition photodiodes for 1 beam (PD142PI) for used as photodetectors for pickups of CD players and video disc players. A
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PD168PI,
PD663PI,
PD666P!
PD142PI)
780nm
PD168PI
117-nternal
DQD37SD
li101
photodetector
PD142PI
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3015 hj
Abstract: SK 1117
Text: 1 V A V 'C L J V DSS MegaMOS FET IXTH/IXTM10 N100 IXTH/IXTM12 N100 p ^D25 DS on 1000 V 10 A 1.20 a 1000 V 12 A 1.05 q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V *DSS Tj = 25 °C to 150°C 1000 V vDGR Tj = 25°C to 150°C; RGS = 1 M n
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IXTH/IXTM10
IXTH/IXTM12
10N100
12N100
O-247
O-204
12N100
IXTM12N100
100ps
3015 hj
SK 1117
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bd 5817
Abstract: methode 1300 series connectors
Text: 68 Position PC Card Receptacles Methode’s 68 position receptacles are PCMCIA and JEID A compatible and are available in straddle mount and single sided surface mount configurations. The independent dual beam contact design insures extended reliability, redundant electrical contact and consistent
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E-48567
b052557
0DD36Db
bd 5817
methode 1300 series connectors
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93C46SI
Abstract: 93C46 ST 93c86 93C46 dip 93C66 93C46 93C56 14 pin 93C86 93c46 st 93C56 catalyst 93C66
Text: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: ■ Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz ■ 1,000,000 Program/Erase Cycles ■ 100 Year Data Retention ■ Low Power CMOS Technology
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CAT93C46/56/57/66/86
1K/2K/2K/4K/16K-Bit
93C46/56/57/66:
93C86:
CAT93C46/56/57/66/86
CAT93C46/56/
MS001
00034G2
DGD374G
93C46SI
93C46
ST 93c86
93C46 dip
93C66 93C46
93C56 14 pin
93C86
93c46 st
93C56 catalyst
93C66
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Untitled
Abstract: No abstract text available
Text: UN Doc #: 1823 LX1823 M I T he C I n f i n i t e K C L* I. r .: I P o w e r K () N I c s High-Speed I n n o v a t i o n o f N ot R Current-Mode e c o m m e n d e d for D ESCRIPTIO N The LX1823 is a high-performance pulse w idth m odulator optim ized for
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LX1823
LX1823
LX1823.
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ECG1015
Abstract: No abstract text available
Text: PHILIPS E C G 17E D INC • btSBISfl 000374b 7 T-74 -0 5-01 ECG1015 LO-NOISE AF PREAMPLIFIER HYBRID MODULE semiconductors Dim ension* in M M M AXIM U M RATINGS Ta = 25°C Symbol Vcc max 20 V Icc max 20 mA 300 mW max Tstg T°P9 — 4.0MAX Unit Rating —20*— '+100
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000374b
ECG1015
DQD3747
ECG1015
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