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    Text: Power F-MOS FET 2SK1035 2SK1035 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce R ds on : (on) = 0 .2 ft (typ.) R ds Unit: mm • High sw itching ra te : tr= 100ns (typ.) • No secondary breakdow n • Low voltage drive is possible


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    PDF 2SK1035 100ns DQ1713S 001713b