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    2SK1035 Search Results

    2SK1035 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK1035 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1035 Unknown FET Data Book Scan PDF
    2SK1035 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1035 Panasonic Silicon N-Channel Power F-MOS FET Scan PDF
    2SK1035 Panasonic SILICON N CHANNEL POWER F MOSFET Scan PDF

    2SK1035 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sk1035

    Abstract: No abstract text available
    Text: 2SK1035 Switching Diodes MA193 Silicon epitaxial planer type For switching circuits Unit : mm +0.2 2.8 –0.3 • Features 0.65±0.15 +0.1 1.5 0.4 –0.05 1.45 0.65±0.15 +0.25 –0.05 0.5 0.8 0.4±0.2 Unit Reverse voltage DC VR 80 Repetitive peak reverse voltage


    Original     		PDF 2SK1035 MA193 2sk1035

    Untitled

    Abstract: No abstract text available
    Text: 2SK1035 Switching Diodes MA1U157A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct ● Series connection type 0.7–0 ■ Absolute Maximum Ratings Ta= 25˚C


    Original     		PDF 2SK1035 MA1U157A

    Untitled

    Abstract: No abstract text available
    Text: 2SK1035 Power F-MOS FETs 2SK1035 Silicon N-Channel Power F-MOS Unit : mm ● High-speed secondary breakdown ● Low-voltage 16.7±0.3 ● No switching : tf = 100ns typ drive 4.2±0.2 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 ON-resistance RDS(on) : R DS(on)= 0.2Ω(typ)


    Original     		PDF 2SK1035 100ns

    2SK1035

    Abstract: MA1U157A ma1u157 2SK103
    Text: 2SK1035 Switching Diodes MA1U157A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 1.5–0.05 Short reverse recovery period trr ● Small capacity between pins, Ct ● Series connection type 0.95 1.9±0.1 0.7–0 ■ Absolute Maximum Ratings Ta= 25˚C


    Original     		PDF 2SK1035 MA1U157A 2SK1035 MA1U157A ma1u157 2SK103

    Untitled

    Abstract: No abstract text available
    Text: 2SK1035 Switching Diodes MA142A Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 0.425 1.25±0.1 0.425 0.3–0 Small S-Mini type package enabling high density mounting 2.0±0.2 1.3±0.1 0.65 0.65 ● +0.1 • Features 1 3 Symbol +0.1


    Original     		PDF 2SK1035 MA142A SC-70

    MA113

    Abstract: 1D-S marking
    Text: 2SK1035 Switching Diodes MA113 Silicon epitaxial planer type Unit : mm For switching circuits Cathode Anode IF AV = 200mA 0.3 0.5±0.1 ● Securing of the current capacity of the forward current (average) 0.625 ● Small S-Mini type package enabling high density mounting


    Original     		PDF 2SK1035 MA113 200mA MA113 1D-S marking

    Untitled

    Abstract: No abstract text available
    Text: 2SK1035 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)


    Original     		PDF 2SK1035

    Untitled

    Abstract: No abstract text available
    Text: 2SK1035 Switching Diodes MA1U157A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct ● Series connection type 0.7–0 ■ Absolute Maximum Ratings Ta= 25˚C


    Original     		PDF 2SK1035 MA1U157A

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    ON3105

    Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
    Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S


    Original     		PDF MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 ON3105 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1035 2SK1035 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce R ds on : (on) = 0 .2 ft (typ.) R ds Unit: mm • High sw itching ra te : tr= 100ns (typ.) • No secondary breakdow n • Low voltage drive is possible


    OCR Scan     		PDF 2SK1035 100ns DQ1713S 001713b

    2SK1035

    Abstract: No abstract text available
    Text: P ow er F-MOS FET 2SK1035 2SK1035 Silicon N-channel Power F-MOS FET Package Dimensions • Features • • • • Low ON resistance Rw on : Rw (on) = 0.2Q (typ.) High switching rate : I,« 100ns (tjrp.) No secondary breakdown Low voltage drive is possible (V o = 4V).


    OCR Scan     		PDF 2SK1035 100ns Rt-16 2SK1035

    2SK996

    Abstract: No abstract text available
    Text: • Power F-MOS FET Package Package No. ! Type (D44) N Type (D42) 2SK1967 TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (D67) V dss V gss Id (V) (V) (A) RciS'On; V is ton tf td(o«) max. typ. (S) typ. (ns) typ. (ns) typ. (ns) 0.2 4.0 29 53 97 7.1 46


    OCR Scan     		PDF 2SK1868 O-220F 2SK1255 2SK1256 2SK1967 2SK1033 2SK1257 O-220E 2SK2578 2SK2579 2SK996

    an6512n

    Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
    Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.


    OCR Scan     		PDF MN115P MN116P MN1201A MN1201M MN1201S MN1202M MN1204A MN1204B MN1204E MN1204F an6512n mn1225 MN1280 mn6520 MN6130 MN6147C MN12C261D MN12C201D MN3107

    2SK2574

    Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
    Text: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative


    OCR Scan     		PDF 2SK1868 -220F 2SK1255 O-220E 2SK2578 2SK2579 2SK1967 2SK2659 2SK1033 2SK2574 2SK2574 2SK1259 2SK2377 2SK2659

    OF03

    Abstract: 2SK1263 2SK2377
    Text: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128


    OCR Scan     		PDF A2SK2277 2SK2014 2SK2047 2SK1834 220Fro 2SK1980 A2SK2128 A2SK2125 2SK1833 2SK2509 OF03 2SK1263 2SK2377

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    MN1280

    Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
    Text: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074


    OCR Scan     		PDF MN1380 MN13801 MN13802 MN1381 MN13811 MN13812 MN1382 MN13821 MN13822 MN1544 MN1280 AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    2sk2015

    Abstract: 2SK2277 2SK2377 2SK1635 2SK2014 2SK2016 2SK1257 2sk1259 2SK1262 2SK2276
    Text: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta = 2 5 °C) Type No. Application Pch 2SJ0398 2SK2014 2SK2015 Switching Nch 2SK2016 A2SK2211 A2SK2276 A2SK2277 A2SK2342 *1 0 = 2 5 ^


    OCR Scan     		PDF 2SJ0398 2SK2014 2SK2015 2SK2016 A2SK2211 A2SK2276 A2SK2277 A2SK2342 2SK1262 O-220F 2SK2277 2SK2377 2SK1635 2SK1257 2sk1259 2SK2276

    2SK2277

    Abstract: 2SK2580 220E4 2SK2015 2SK2014
    Text: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128


    OCR Scan     		PDF 2SK2277 2SK2014 2SK2047 2SK2538 220Fz 2SK1834 220Fro 2SK1980 A2SK2128 220E-0 2SK2580 220E4 2SK2015

    2SK1011

    Abstract: 2sk1029 2SK1026 2SK1025 2SK1016 2SK1010 2SK1015 2sk1018 2SK1032 2SK1006
    Text: f € m. % tt m € m m % it ü 3: * V* * K V * (V) ft fé i* (A) ^ *» X P d /P c h ft * (W) I gss (max) (A) Vg s (V) W Id s (min) (max) V d s (A) (V) (A) ft (Ta=25°C) 14 g (min) (max) V d s (V) (V) (V) (min) (S) Id (A) Vds (V) Id (A) SW-Reg, USP, DDC


    OCR Scan     		PDF 2SK1006 2SK1007 500/i 2SK1008 2SK1009 2SK1010 2SK1026 160ns. 280nstyp 2SK1027 2SK1011 2sk1029 2SK1026 2SK1025 2SK1016 2SK1015 2sk1018 2SK1032 2SK1006

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643