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    DQ11 Price and Stock

    Diodes Incorporated AP7347DQ-11FDZW-7

    LDO CMOS LOWCURR W-DFN2020-6 T&R
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    DigiKey AP7347DQ-11FDZW-7 Digi-Reel 3,000 1
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    AP7347DQ-11FDZW-7 Reel 3,000 3,000
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    AP7347DQ-11FDZW-7 Cut Tape 3,000 1
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    Avnet Americas AP7347DQ-11FDZW-7 Reel 20 Weeks 3,000
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    Mouser Electronics AP7347DQ-11FDZW-7
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    Diodes Incorporated AP7343DQ-11FDZW-7

    LDO CMOS LOWCURR W-DFN2020-6 T&R
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    DigiKey AP7343DQ-11FDZW-7 Digi-Reel 3,000 1
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    AP7343DQ-11FDZW-7 Cut Tape 3,000 1
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    AP7343DQ-11FDZW-7 Reel 3,000 3,000
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    Avnet Americas AP7343DQ-11FDZW-7 Reel 8 Weeks 3,000
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    Mouser Electronics AP7343DQ-11FDZW-7 3,000
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    Diodes Incorporated AP7347DQ-11FDZW-7B

    LDO CMOS LowCurr W-DFN2020-6 T&R
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    DigiKey AP7347DQ-11FDZW-7B Bulk 3,000 1
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    Mouser Electronics AP7347DQ-11FDZW-7B
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    Diodes Incorporated AP7347DQ-115FDZW-7

    LDO CMOS LowCurr W-DFN2020-6 T&R
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    DigiKey AP7347DQ-115FDZW-7 Bulk 3,000 1
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    Mouser Electronics AP7347DQ-115FDZW-7
    • 1 $0.66
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    Diodes Incorporated AP7347DQ-11W5-7

    LDO CMOS LOWCURR SOT25 T&R 3K
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    DigiKey AP7347DQ-11W5-7 Digi-Reel 2,894 1
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    AP7347DQ-11W5-7 Cut Tape 2,894 1
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    Avnet Americas AP7347DQ-11W5-7 Reel 36 Weeks 3,000
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    Mouser Electronics AP7347DQ-11W5-7
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    DQ11 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DQ1101-7 Power-One 60...132 Watt DC-DC Converters Original PDF
    DQ1101-7-9 Power-One DC-DC Converter: (43 to 108) V to (3.3) V Original PDF
    DQ1101-7-9G Power-One DC-DC Converter: (43 to 108) V to (3.3) V Original PDF
    DQ1101-9 Power-One DC DC Converters, Power Supplies - External/Internal (Off-Board), DC/DC CONVERT 3.3V 25A Original PDF

    DQ11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TMS418160-60DZ 1/2 IL08D C-MOS 16 M (1,048,576 x 16)-BIT HIGH SPEED DRAM —TOP VIEW— 17 1 VDD GND 42 18 DQ0 2 41 DQ15 DQ1 3 40 DQ14 DQ2 4 39 DQ13 DQ3 5 38 DQ12 6 VDD DQ4 7 19 20 23 24 25 26 27 GND 37 28 36 DQ11 A0 DQ 0 A1 DQ 1 A2 DQ 2 A3 DQ 3 A4 DQ 4


    Original     		PDF TMS418160-60DZ IL08D

    Untitled

    Abstract: No abstract text available
    Text: UPD4564163G5-A10B-9JF IL08 C-MOS 64 M 1 M WORD x 16-BIT x 4 -BIT DRAM —TOP VIEW— 1 VDD DQ0 2 3 QVDD GND 54 53 DQ15 QGND 52 INPUT A0 - A13 CAS CKE CLK DQ1 4 51 DQ14 CS DQ2 5 50 DQ13 LDQM 6 QGND QVDD 49 DQ3 7 48 DQ12 DQ4 8 47 DQ11 9 QVDD QGND 46 DQ5 10


    Original     		PDF UPD4564163G5-A10B-9JF 16-BIT

    A64S16161

    Abstract: AMIC TECHNOLOGY 256X16 ASCEND VCC
    Text: A64S16161 Preliminary 2M X 16 Bit Low Voltage Super RAM Features ● Memory Cell : Dynamic memory DRAM ● Refresh: Completely free 1 2 3 4 5 6 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D VSS DQ11 A17 A7 DQ3 VCC E VCC DQ12


    Original     		PDF A64S16161 A64S16161 AMIC TECHNOLOGY 256X16 ASCEND VCC

    416c256

    Abstract: j5021
    Text: 1 2 3 4 5 6 7 8 BANK 0 2 MB 9 AA[0.8] AA[0.8] 9 VMD[0.63] VMD[0.63] +5V 2 1 (-CASAH) (-CASAL) GND 16 17 18 19 22 23 24 25 26 15 11 12 30 13 14 27 28 29 21 35 40 GND DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 2 3 4 5 7 8


    Original     		PDF 416C256 SOJ40A 10P/NA 0603B VMD10 VMD11 VMD12 VMD13 VMD14 j5021

    LH521028

    Abstract: LH521028A 521028-1D
    Text: LH521028A A14 A13 G A15 VSS ALE VCC VSS 9 W DQ10 4 3 2 1 52 51 50 49 48 47 46 DQ8 45 DQ7 10 44 DQ6 11 43 VCC DQ11 12 42 VSS DQ12 13 41 DQ5 DQ13 14 40 DQ4 DQ14 15 39 DQ3 DQ2 VSS 16 38 VCC 17 37 VSS DQ15 18 36 VCC DQ0 A11 DQ1 34 A12 35 20 21 22 23 24 25 26 27 28 29 30 31 32 33


    Original     		PDF LH521028A 52PLCC-A 52-Pin 52-pin, PLCC52-P-750) LH521028AU-15 521028AM LH521028 LH521028A 521028-1D

    Untitled

    Abstract: No abstract text available
    Text: KM416C254BJ 1/2 IL08 * C-MOS 4M(256K x 16)-BIT DYNAMIC RAM WITH EXTENDED DATA OUT - TOP VIEW - 1 V DD (+5V) GND 40 DQ1 2 39 DQ16 DQ2 3 38 DQ15 DQ3 4 37 DQ14 DQ4 5 36 DQ13 V DD 6 (+5V) 34 DQ12 DQ6 8 33 DQ11 DQ7 9 32 DQ10 DQ8 10 31 DQ9 12 N.C W 13


    Original     		PDF KM416C254BJ DQ0-DQ16 DQ9-DQ16

    ASCEND VCC

    Abstract: No abstract text available
    Text: A64S06161 Preliminary 1M X 16 Bit Low Voltage Super RAM Features ● Memory cell : Dynamic memory DRAM ● Refresh: Completely free 1 2 3 4 5 6 A LB# OE# A0 A1 A2 CS2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D VSS DQ11 A17 A7 DQ3 VCC E VCC DQ12


    Original     		PDF A64S06161 576Word A64S06161G-70I ASCEND VCC

    Untitled

    Abstract: No abstract text available
    Text: 4 5 6 7 2 DQ0 PIU402 4 DQ1 PIU404 5 DQ2 PIU405 7 DQ3 PIU407 PIU408 8 DQ4 10 DQ5 PIU4010 11 DQ6 PIU4011 13 DQ7 PIU4013 42 DQ8 PIU4042 44 DQ9 45 PIU4044 PIU4045 DQ10 47 DQ11 PIU4047 48 DQ12 PIU4048 50 DQ13 PIU4050 51 DQ14 PIU4053 PIU4051 53 DQ15 BA 0 BA 1 i PCB Rule


    Original     		PDF PIU402 PIU404 PIU405 PIU408 PIU407 PIU4010 PIU4011 PIU4013 PIU4042 PIU4045

    MOD32

    Abstract: TMS28F033
    Text: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY SMJS833 – NOVEMBER 1997 V DDE RP CLK QV RY/BY LBA V SSI S/5IO V DDI E WE OE WR WORD/DIS BAA/LRV 60 VSSE VSSE 6 59 VDDE DQ20 7 58 DQ11 DQ21 8 57 DQ10 DQ22 9 56 DQ9 DQ23 10 55 DQ8 DQ24 11 54 DQ7 DQ25 12 53 DQ6


    Original     		PDF TMS28F033 4194304-BIT SMJS833 MOD32 TMS28F033

    DMA5

    Abstract: tsop50 MD50 U-509 SO-DIMM 144-pin KM416V4104A U5-12 U509
    Text: 2 3 4 GND GND GND GND 3,5 3,5 3,5 D_RAS2# D_CAS3# D_CAS2# 3,5 D_MWEB# 26 39 45 50 KM416V4104A TSOP50 GND RAS# UCAS# LCAS# OE# W# NC NC NC NC NC NC DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 VCC VCC VCC VCC GND GND GND GND 2 3 4 5


    Original     		PDF MA10/0 MA11/1 4mx16 1mx16 0603B 0603B DMA5 tsop50 MD50 U-509 SO-DIMM 144-pin KM416V4104A U5-12 U509

    28f210

    Abstract: TMS28F210
    Text: TMS28F210 65536 BY 16-BIT FLASH MEMORY SMJS210D – DECEMBER 1992 – REVISED AUGUST 1997 D D D D 6 5 DQ12 DQ11 DQ10 DQ9 DQ8 VSS NC DQ7 DQ6 DQ5 DQ4 4 3 W NC A15 A14 2 1 44 43 42 41 40 7 39 8 38 9 37 10 36 11 35 12 34 13 33 14 32 15 31 16 30 17 29 A13 A12 A11


    Original     		PDF TMS28F210 16-BIT SMJS210D 16-Bits 28F210-10 28customer 28f210 TMS28F210

    LH521028

    Abstract: LH521028A
    Text: LH521028A ALE 1 52 51 50 49 48 47 46 A14 2 A13 3 G 4 A15 VSS 5 W 6 DQ8 45 DQ7 10 44 DQ6 11 43 VCC DQ11 12 42 VSS DQ12 13 41 DQ5 DQ13 14 40 DQ4 DQ14 15 39 DQ3 DQ2 DQ10 9 VCC VSS 18 36 VCC DQ16 19 35 DQ1 DQ17 34 20 21 22 23 24 25 26 27 28 29 30 31 32 33 DQ0


    Original     		PDF LH521028A 52PLCC-A 52-Pin 52-pin, PLCC52-P-750) LH521028AU-15 521028AM LH521028 LH521028A

    Untitled

    Abstract: No abstract text available
    Text: A64S16161 Preliminary 2M X 16 Bit Low Voltage Super RAM Features ● Memory Cell : Dynamic memory DRAM ● Refresh: Completely free 1 2 3 4 5 6 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D VSS DQ11 A17 A7 DQ3 VCC E VCC DQ12


    Original     		PDF A64S16161 A64S16161G-70I

    Untitled

    Abstract: No abstract text available
    Text: A64S06161 Preliminary 1M X 16 Bit Low Voltage Super RAM Features ● Memory cell : Dynamic memory DRAM ● Refresh: Completely free 1 2 3 4 5 6 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D VSS DQ11 A17 A7 DQ3 VCC E VCC DQ12


    Original     		PDF A64S06161

    Untitled

    Abstract: No abstract text available
    Text: N A PIER PHILIPS/DISCRETE OLE D 1,^53=131 DQ110E3 1 BR220 SERIES r - 3 5 " - OS- DUAL BREAKOVER DIODES The BR220 is a range of monolithic diffusion-isolated glass-passivated dual bidirectional breakover diodes in the TO-220AB outline, available in a + /— 12% tolerance series of nominal breakover voltage.


    OCR Scan     		PDF DQ110E3 BR220 O-220AB bbS3T31 0011D3S bb53131 001103b

    Untitled

    Abstract: No abstract text available
    Text: DS1258Y/AB P R O D U C T P R EVIEW DALLAS DS1258Y/AB 128K x 16 Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 year minimum data retention in the absence of external power CEU CEL DQ15 DQ14 1 1 1 1 DQ13 1 DQ12 • DQ11 1 • Data is automatically protected during a power loss


    OCR Scan     		PDF DS1258Y/AB DS1258Y) DS1258AB) DS125BY/AB DS1258Y/AB 40-PIN

    HA118070

    Abstract: HA118070FP ha11807
    Text: HITACHI/ L INEAR DEV I CE S 2bE D • 44Tb202 DQ1103b 2 H A 1 1 8 0 7 0 - — T -7 7 -0 7 -Q 5 Video Switch with Preamplifier (1-clrcult, 2-contact) Features Ordering Information • 5V single supply operation


    OCR Scan     		PDF HA118070- 44Tb20E 001103b T-77-07-Q5 HA118070 HA118070FP 001104b ha11807

    Untitled

    Abstract: No abstract text available
    Text: GOULD 4055916 GOUL D IN C / GOULD A M I SEMI CONDUCTOR 03 DIV D • 03E MDSSTlb 1 1494 DQ114TM 0^ TABLE OF CONTENTS SECTION 1: DESIGN INFORMATION 1.1 CHOOSING AN ARRAY. 1-5 1.1.1 Determining Gate Count. 1-6


    OCR Scan     		PDF DQ114TM

    Untitled

    Abstract: No abstract text available
    Text: EDI8F2465C ^ED I Bcctronic Designs In c." High Speed 1.5 Megabit SRAM Module 64Kx24 Static RAM M CMOS, High Speed Module E l” 33 NC_ 35 G 37 DOS 39 DQ9 41 DQ10 43 DQ11 45 A3 47 A4 49 A5 51 VCC 53 A6 55 NC 57 NC 59 NC 61 NC 63 10 12 14 16 18 20 22 24 26 28


    OCR Scan     		PDF EDI8F2465C 64Kx24 EDI8F2465C25MMC EDI8F2465C30MMC I8F2465C35M EDI8F2465C45MMC EDI8F2465C55MMC EDI8F2465C20MMC

    RCD 2226

    Abstract: No abstract text available
    Text: ADVANCE M T 4C 16260/1 256K X 16 DRAM M IC R O N DRAM 256K X 16 DRAM ASYMMETRICAL, FAST PAGE MODE FEATURES 40-Pin SOJ 40-Pin ZIP Q-6 (0-4) DQ9 1 DQ11 3 Vss 5 DQ14 • Masked Write Not Available Available 4 DQ12 6 DQ 13 B 9 Vcc 11 DQ15 12 D01 D 02 13 DQ4


    OCR Scan     		PDF 500mW MT4C16261 40-Pin RCD 2226

    Untitled

    Abstract: No abstract text available
    Text: b3E D 7 tn ? D ? b LC83010N, 83010NE DQ11337 bfiO « T S A J SANYO 3071 3174 S EMI CONDUCTOR C0RP C M O S LSI Audio Digital Signal Processor 3945A O ve rvie w The LC83010N, 83010NE is a sin g le -ch ip d ig ita l signal processor DSP . It is designed fo r use in the


    OCR Scan     		PDF LC83010N, 83010NE DQ11337 83010NE LC83010N LC83010NE

    BT153

    Abstract: L6ss Thyristor TAG LT 862 thyristor TAG 13 TAG thyristor Alps Tact Switch TO 220 THYRISTOR FAST SWITCHING
    Text: N AMER P H I L I P S /D I SC RE T E ObE D • ^53131 DQ11&H3 l BT153 I FAST TURN-OFF THYRISTOR Glass-passivated fast-turn-off thyristor in a TO-220AB envelope, intended fo r use in inverter pulse and switching applications. Its characteristics make the device extremely suitable fo r use in regulator


    OCR Scan     		PDF BT153 O-220AB O-220AB. 7Z82059 bfa53131 BT153 L6ss Thyristor TAG LT 862 thyristor TAG 13 TAG thyristor Alps Tact Switch TO 220 THYRISTOR FAST SWITCHING

    PV11050

    Abstract: PVA1354 PVR1301 PVA1052 PVA1054 PVA1352 PVA2352 PVR1300 PVR2300 PVR3300
    Text: 5TE J> • INTERNATIONAL RECTIFIER international t4fl5SMSa DQ11737 312 ■ INR PIC Microelectronic Relays SoH R e c tifie r Photovoltaic Relay Max. OnState Res. @ Max load Current Operating 25°C Ohms Part @ 40°C Voltage Number DC Range mA V(Pk) AC/DC DC


    OCR Scan     		PDF DQ11737 PVR1300 PVR1301 PVR2300 PVR3300 PVR3301 PVA1052 PVD2352 PVD3354 PVDZ172 PV11050 PVA1354 PVR1301 PVA1052 PVA1054 PVA1352 PVA2352 PVR1300 PVR2300 PVR3300

    sanyo LCD camera display

    Abstract: LC5860 sanyo lcd clock display
    Text: SANYO SEMI CONDUCTOR CORP b3E D • 7Tì707b DQ111G1 bb3 I TSAJ CMOS 4-BIT SINGLE-CHIP MICROCOMPUTERS LC5860/5870 SERIES Overview The LC5860/5870 Series CMOS 4-bit single-chip micro­ computers are ideal for controlling LCD displays. Sanyo's proprietary LCD display circuit technology controller/


    OCR Scan     		PDF DQ111G1 LC5860/5870 256-/512-word 15-bit sanyo LCD camera display LC5860 sanyo lcd clock display