6DI15S-050
Abstract: 6DI10A-050 IC M605 6di30a-120 1DI100MA-050 6DI30A-050 EVF31H-035 2DI150M-120 M605 1DI200M-120
Text: COLLMER SEMICONDUCTOR INC MAE D I 25307=12 DQ01574 5GÛ « C O L <& Power Darlington Modules 4 PACK/6 PACK VCEX' VCEO Device Type Vceo Volts VCEO Volts sus Volts ic Pc cont. Watts Amps (per Xstr) Switching time (Max.) ton ts tf jisec. usee. ^sec. Ic Amps.
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DQ01574
EVF31H-035
EVF31H-050
4DI30A-030
2DI50M-12Û
2DI75M-120
2DI100M-120
2DI150M-120
6DI15M-120
6DI30M-120
6DI15S-050
6DI10A-050
IC M605
6di30a-120
1DI100MA-050
6DI30A-050
M605
1DI200M-120
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lm814
Abstract: ID32-001
Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR
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TC59LM814/06BFT-22
TC59LM814/06BFT
TC59LM814BFT
304-words
TC59LM806BFT
LM814/06B
FT-22
lm814
ID32-001
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply
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AS4DDR32M72PBG1
32Mx72
333Mbps
23mm-1
208-PBGA
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72PBG
32Mx72
AS4DDR232M72PBG
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A43L0616A
Abstract: A43L0616AV
Text: A43L0616A 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue December 4, 2000 Preliminary 0.1 Add input/output capacitance specification February 13, 2001
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A43L0616A
A43L0616A
A43L0616AV
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IS46R16160B
Abstract: zentel is43r16160b
Text: IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/
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IS43R83200B,
IS46R83200B
IS43R16160B,
IS46R16160B
32Mx8,
16Mx16
256Mb
conx16
66-pin
IS46R16160B
zentel
is43r16160b
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ACT-D16M96S
Abstract: BSA1 BS-B1
Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM
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ACT-D16M96S
16MegaBit
50-MHz
192-cycle
SCD3370
BSA1
BS-B1
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HY514460
Abstract: No abstract text available
Text: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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HY514460
Kx164
16-bit
400mil
40pin
40/44pin
1AC12-00-APR93
DDQ1553
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 5 VOLT FlashFile MEMORY 28F160S5 and 28F320S5 x8/x16 Two 32-Byte Write Buffers — 2 \is per Byte Effective Programming Time Operating Voltage 5 V Vcc — — 5 V V pp 70 ns Read Access Time (16 Mbit) 90 ns Read Access Time (32 Mbit) High-Density Symmetrically-Blocked
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28F160S5
28F320S5
x8/x16)
32-Byte
64-Kbyte
28F016SV
28F016SA
AP-607
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GPR323A16A
Abstract: No abstract text available
Text: GPR323A16A 16M x 16 bit Synchronous DRAM SDRAM Dec. 5, 2008 Version 1.0 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS
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GPR323A16A
GPR323A16A
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LH28F320BFHE-PBTL80
Abstract: AP-007-SW-E
Text: Date 32M x16 Flash Memory LH28F320BFHE-PBTL80 Aug. 28. 2001 LHF32F12 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.
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LH28F320BFHE-PBTL80
LHF32F12
AP-001-SD-E
AP-006-PT-E
AP-007-SW-E
LH28F320BFHE-PBTL80
AP-007-SW-E
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LH28F800BJHE-PBTLT9
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F800BJHE-PBTLT9 Flash Memory 8Mbit 1Mbitx8 (Model Number: LHF80JT9) Lead-free (Pb-free) Spec. Issue Date: October 8, 2004 Spec No: EL16X081 LHF80JT9 ●Handle this document carefully for it contains material protected by international copyright law.
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LH28F800BJHE-PBTLT9
LHF80JT9)
EL16X081
LHF80JT9
LH28F800BJHE-PBTLT9
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LH28F640BFHG-PBTL70A
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LH28F640BFHG-PBTL70A
64Mbit
4Mbitx16)
LHF64FH9)
FM045022A
LHF64FH9
LH28F640BFHG-PBTL70A
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LH28F320BFHE-PBTLF1
Abstract: Flash Memory 32Mbit DQ15DQ0
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 32Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LH28F320BFHE-PBTLF1
32Mbit
2Mbitx16)
LHF32FF1
EL16X114
LH28F320BFHE-PBTLF1
Flash Memory 32Mbit
DQ15DQ0
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WED416S8030A
Abstract: No abstract text available
Text: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,
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WED416S8030A
WED416S8030A
83MHz
100MHz)
83MHz)
lengt471)
WED416S8030A10SI
2Mx16bitsx4banks
100MHz
WED416S8030A12SI
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LH28F160S3NS-L10
Abstract: LHF16KA1
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3NS-L10 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16KA1) Issue Date: March 16, 2001 sharp LHF16KA1 ●Handle this document carefully for it contains material protected by international copyright
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LH28F160S3NS-L10
LHF16KA1)
LHF16KA1
LH28F160S3NS-L10
LHF16KA1
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LH28F160S3HNS-L10A
Abstract: LHF16KAU
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3HNS-L10A Flash Memory 16M 2MB x 8 / 1MB × 16 (Model No.: LHF16KAU) Spec No.: EL138074 Issue Date: September 5, 2001 sharp LHF16KAU ●Handle this document carefully for it contains material protected by international copyright
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LH28F160S3HNS-L10A
LHF16KAU)
EL138074
LHF16KAU
LH28F160S3HNS-L10A
LHF16KAU
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K4C560838C-TCB
Abstract: No abstract text available
Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM
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K4C5608/1638C
256Mb
Orga41
K4C560838C-TCB
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LH28F800BJHB-PTTL10
Abstract: FC004 ap007 7D002
Text: Date 8M x8/x16 Flash Memory LH28F800BJHB-PTTL10 Jul. 6. 2001 LHF80J24 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written
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x8/x16)
LH28F800BJHB-PTTL10
LHF80J24
AP-001-SD-E
AP-006-PT-E
AP-007-SW-E
LH28F800BJHB-PTTL10
FC004
ap007
7D002
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Enhanced SDRAM
Abstract: No abstract text available
Text: 64Mbit – Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Preliminary Data Sheet Overview Features • • • • • • • • • • • • • • High Performance 166 MHz Superset to SDRAM 100% Pin Compatible with SDRAM 100% Function and Timing Compatible with JEDEC
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64Mbit
4Mx16
SM2603T-6
SM2604T-6
SM2603T-7
SM2604T-7
SM2603T-10
SM2604T-10
54-pin
Enhanced SDRAM
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SM3603
Abstract: Enhanced Memory Systems 8mx8 SM3604T-7
Text: 64Mbit – High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. While compatible with standard SDRAM, they provide the faster
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64Mbit
4Mx16
SM3603
SM3604
PC-133
SM3603T-7
54-pin
SM3604T-7
Enhanced Memory Systems
8mx8
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LH28F160BGH-TL
Abstract: LH28F160BG-TL TSOP048-P-1220
Text: LH28F160BG-TL/BGH-TL LH28F160BG-TL/BGH-TL 16 M-bit 1 MB x 16 Smart 3 Flash Memories DESCRIPTION Y R A L FEATURES • Enhanced automated suspend options – Word write suspend to read – Block erase suspend to word write – Block erase suspend to read • SRAM-compatible write interface
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LH28F160BG-TL/BGH-TL
60-ball
FBGA060/048-P-0811)
LH28F160BGXX-XTL10
LH28F160BGXX-XTL12
TSOP048-P-1220)
LH28F160BGH-TL
LH28F160BG-TL
TSOP048-P-1220
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M2S56D20
Abstract: M2S56D20AKT M2S56D30AKT M2S56D40AKT
Text: DDR SDRAM Rev.1.0 MITSUBISHI LSIs M2S56D20/ 30/ 40AKT Jul. '01 Preliminary 256M Double Data Rate Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION M2S56D20AKT is a 4-bank x 16,777,216-word x 4-bit, M2S56D30AKT is a 4-bank x 8,388,608-word x 8-bit,
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M2S56D20/
40AKT
M2S56D20AKT
216-word
M2S56D30AKT
608-word
M2S56D40AKT
304-word
16-bit,
M2S56D20/30/40AKT
M2S56D20
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making a10
Abstract: M2V56S20 M2V56S20ATP M2V56S30ATP M2V56S40ATP a10 da1
Text: SDRAM Rev.1.01 Single Data Rate MITSUBISHI LSIs M2V56S20/ 30/ 40 ATP -5, -6, -7 Jul '01 256M Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2V56S20ATP is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP is a 4-bank x 8388608-word x 8-bit,
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M2V56S20/
M2V56S20ATP
16777216-word
M2V56S30ATP
8388608-word
M2V56S40ATP
4194304-word
16-bit,
M2V56S20/30/40ATP
100MHz
making a10
M2V56S20
a10 da1
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