w19b320
Abstract: No abstract text available
Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W19B320AT/B
w19b320
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SAMSUNG MCP
Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)
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KBB0xB400M
16Mx16)
4Mx16)
80-Ball
80x12
SAMSUNG MCP
ECH information
KBB0xB400M
BA102
ba4901
UtRAM Density
BA5101
samsung NAND memory
BGA180
ba30 transistor
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Untitled
Abstract: No abstract text available
Text: S98WS256PD0-003 Stacked Multi-chip Product MCP 256 Mbit (16 M x 16-Bit) 1.8 V Burst Mode Flash Memory 128 Mb (8M x 16-Bit) 1.8 V CellularRAM Type 2, Burst Mode Data Sheet S98WS256PD0-003 Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S98WS256PD0-003
16-Bit)
S98WS256PD0-003
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SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
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S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
SA6954
S29WS064N
S29WS128N
S29WS256N
WS128N
FFC00
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Untitled
Abstract: No abstract text available
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
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K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
08MAX
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LHF00L31
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LHF00L31 Flash Memory 16Mbit 1Mbitx16 (Model Number: LHF00L31) Spec. Issue Date: May 25, 2004 Spec No: FM045026 LHF00L31 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LHF00L31
16Mbit
1Mbitx16)
LHF00L31)
FM045026
LHF00L31
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LHF00L14
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LHF00L14 Flash Memory 32M 2MB x 16 (Model No.: LHF00L14) Spec No.: EL163055 Issue Date: March 15, 2004 LHF00L14 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LHF00L14
LHF00L14)
EL163055
LHF00L14
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740-0007
Abstract: EN29GL064 6A000
Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
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EN29GL064
8192K
4096K
16-bit)
740-0007
EN29GL064
6A000
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LH28F320BFHE-PBTL80
Abstract: AP-007-SW-E
Text: Date 32M x16 Flash Memory LH28F320BFHE-PBTL80 Aug. 28. 2001 LHF32F12 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.
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LH28F320BFHE-PBTL80
LHF32F12
AP-001-SD-E
AP-006-PT-E
AP-007-SW-E
LH28F320BFHE-PBTL80
AP-007-SW-E
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KFG2G16Q2A
Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFG2G16Q2A-DEBx)
KFH4G16Q2A-DEBx)
KFG2G16Q2A
KFH4G16Q2A
80x11
KFG2G16Q2A)
KFH4G16Q2A)
KFG2G16Q2A
0307h
0719h
63FBGA
KFG2G16
onenand
oneNand flash
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ba37
Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary
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K8D1716UTC
K8D1716UBC
48TSOP1
48FBGA
047MAX
48-Ball
ba37
K8D1716U
K8D1716UBC
samsung nor flash
BA251
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SA-275
Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document
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Am29PDL129H
S29PL129J
Am29PDL129J
SA-275
2aa 555
SA1127
SA1-108
SA1115
SA298
SA283
SA1117
PDL128G
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SST39LF200A
Abstract: SST39LF400A SST39LF800A SST39VF200A SST39VF400A SST39VF800A
Text: 2 Mbit / 4 Mbit / 8 Mbit x16 Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A SST39LF/VF200A / 400A / 800A3.0 & 2.7V 2Mb / 4Mb / 8Mb (x16) MPF memories Data Sheet FEATURES: • Organized as 128K x16 / 256K x16 / 512K x16
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SST39LF200A
SST39LF400A
SST39LF800A
SST39VF200A
SST39VF400A
SST39VF800A
SST39LF/VF200A
800A3
SST39LF200A/400A/800A
SST39VF200A/400A/800A
SST39LF800A
SST39VF800A
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63FBGA
Abstract: KFG1G16Q2B onenand
Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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KFG1G16Q2B-DEBx)
KFG1G16Q2B
80x11
KFG1G16x2B)
63FBGA
KFG1G16Q2B
onenand
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LH28F320BFHE-PBTLF1
Abstract: Flash Memory 32Mbit DQ15DQ0
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 32Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LH28F320BFHE-PBTLF1
32Mbit
2Mbitx16)
LHF32FF1
EL16X114
LH28F320BFHE-PBTLF1
Flash Memory 32Mbit
DQ15DQ0
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LRS1830
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1830 Stacked Chip 256M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1830) Spec No.: EL14Z046 Issue Date: January 14, 2003 sharp L R S1 8 3 0 x Handle this document carefully for it contains material protected by international copyright law.
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LRS1830
LRS1830)
EL14Z046
LRS1830
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mobile circuit diagram
Abstract: No abstract text available
Text: Renesas LSIs M6MGB/T647M33KT 67,108,864-BIT 4,194,304-WORD BY 16-BIT CMOS FLASH MEMORY 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM & Stacked-µMCP (micro Multi Chip Package) Description The M6MGB/T647M33KT is a Stacked micro Multi Chip Package (S-µMCP) that contents 64M-bit Flash memory and
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M6MGB/T647M33KT
864-BIT
304-WORD
16-BIT)
432-BIT
152-WORD
M6MGB/T647M33KT
64M-bit
32M-bit
mobile circuit diagram
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M27W032
Abstract: No abstract text available
Text: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V
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M27W032
110ns
0020h
TSOP48
888Eh
M27W032
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AM29F032B 04h
Abstract: 19945 AM29F010
Text: Am29Fxxx, 5.0 Volt-only Flash AMD* Device Bus Operations, Command Definitions, and Write Operations Status INTRODUCTION This section contains descriptions about the device bus operations, command definitions, and write operation status of the Am29Fxxx, 5.0 volt-only family of Flash
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Am29Fxxx
Am29F010A
Am29F100
AM29F032B 04h
19945
AM29F010
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am29f400bb
Abstract: No abstract text available
Text: 'RH .v'IKMF AM Dii Am29F400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit dMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 vott-only operation for read, erase, and program operations — Minimizes system level requirements
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
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29f800bb
Abstract: 29F800BT 29F800B 29F800BT-70 29F800BT-90 29F800BB-70 M29F800B 29f800bb55
Text: AMD£I Am29F800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements
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Am29F800B
8-Bit/512
16-Bit)
Am29F800
32pecifications
A18-A12.
29f800bb
29F800BT
29F800B
29F800BT-70
29F800BT-90
29F800BB-70
M29F800B
29f800bb55
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AM29LVXXX
Abstract: No abstract text available
Text: Am29LVxxx, 3.0 Volt-only Flash AMDJ1 Device Bus Operations, Command Definitions, and Write Operation Status INTRODUCTION DEVICE BUS OPERATIONS This section contains descriptions about the device bus operations, command definitions, and write operation status of the Am29LVxxx, 3.0 volt-only family of Flash
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Am29LVxxx
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am29f400b
Abstract: am29f400bb 22AB AM29F400BT
Text: AMDZ1 P R E L IM IN A R Y Am29F400B 4 Megabit 512 K X 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
22AB
AM29F400BT
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Untitled
Abstract: No abstract text available
Text: PR ELIM IN ARY AMDZ1 Am29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations
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Am29SL800C
8-Bit/512
16-Bit)
29SL800B
29SL800C
FGB048â
48-Ball
16-038-FG
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