Untitled
Abstract: No abstract text available
Text: SSRAM Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES z z z z z z z z z z z OPTIONS MARKING DQ No. 1001 100-pin TQFP (DQ) (3-chip enable version, no indicator)
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AS5SS256K36
AS5SS256K36A
100-lead
AS5SS256K36ADQ-8
AS5SS256K36
-40oC
85oC1
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AS5SS256K36
Abstract: AS5SS256K36A 876-3210
Text: SSRAM Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES z z z z z z z z z z z OPTIONS MARKING DQ No. 1001 100-pin TQFP (DQ) (3-chip enable version, no indicator)
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100-pin
AS5SS256K36
AS5SS256K36A
AS5SS256K36ADQ-8
-40oC
85oC1
-55oC
125oC
AS5SS256K36
AS5SS256K36A
876-3210
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AS5SS256K36
Abstract: AS5SS256K36A 876-3210
Text: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES ! ! ! ! ! ! ! ! ! ! ! OPTIONS MARKING DQ No. 1001
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AS5SS256K36
AS5SS256K36A
100-pin
AS5SS256K36
AS5SS256K36ADQ-8
AS5SS256K36A
876-3210
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Untitled
Abstract: No abstract text available
Text: SU564648FD8NWFO January 12, 2005 Ordering Information Part Numbers Description Module Speed SM564648FD8NWFO 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR400B, 31.75mm, 22Ω DQ termination. PC3200 @ CL 3.0 SB564648FD8NWFO 64Mx64 (512MB), DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR400B, 31.75mm, 22Ω DQ termination,
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SU564648FD8NWFO
SM564648FD8NWFO
SB564648FD8NWFO
64Mx64
512MB)
200-pin
32Mx8
DDR400B,
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U-564
Abstract: sg564648
Text: SU5646485D8NZCL September 23, 2004 Ordering Information Part Numbers Description Module Speed SM5646485D8NZCL 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 64Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination. PC2700 @ CL 2.5 SB5646485D8NZCL 64Mx64 (512MB), DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 64Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination,
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SU5646485D8NZCL
SM5646485D8NZCL
SB5646485D8NZCL
64Mx64
512MB)
200-pin
64Mx8
DDR333B,
U-564
sg564648
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Untitled
Abstract: No abstract text available
Text: SU564648FD8NWFN January 12, 2005 Ordering Information Part Numbers Description Module Speed SM564648FD8NWFN 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR400C, 31.75mm, 22Ω DQ termination. PC3200 @ CL 3.0 SB564648FD8NWFN 64Mx64 (512MB), DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR400C, 31.75mm, 22Ω DQ termination,
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SU564648FD8NWFN
SM564648FD8NWFN
SB564648FD8NWFN
64Mx64
512MB)
200-pin
32Mx8
DDR400C,
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sg564648
Abstract: No abstract text available
Text: SU5646485D8NZFN September 24, 2004 Ordering Information Part Numbers Description Module Speed SM5646485D8NZFN 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 64Mx8 Based, DDR400C, 31.75mm, 22Ω DQ termination. PC3200 @ CL 3.0 SB5646485D8NZFN 64Mx64 (512MB), DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 64Mx8 Based, DDR400C, 31.75mm, 22Ω DQ termination,
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SU5646485D8NZFN
SM5646485D8NZFN
SB5646485D8NZFN
64Mx64
512MB)
200-pin
64Mx8
DDR400C,
sg564648
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transistor cd 4400
Abstract: No abstract text available
Text: /3&0 /3& 6XSHU ,2 ZLWK +DUGZDUH 0RQLWRULQJ %ORFN %&# $ S S S S S S S S 9ROW 2SHUDWLRQ 6,2 %ORFN LV 9ROW 7ROHUDQW /3& ,QWHUIDFH $&3, &RPSOLDQW DQ &RQWURO )DQ 6SHHG &RQWURO 2XWSXWV )DQ 7DFKRPHWHU ,QSXWV 3URJUDPPDEOH :DNHXS YHQW ,QWHUIDFH
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LPC47M192
transistor cd 4400
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SG564648FD8NWCL
Abstract: No abstract text available
Text: SU564648FD8NWCL January 12, 2005 Ordering Information Part Numbers Description Module Speed SM564648FD8NWCL 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination. PC2700 @ CL 2.5 SB564648FD8NWCL 64Mx64 (512MB), DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination,
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SU564648FD8NWCL
SM564648FD8NWCL
SB564648FD8NWCL
64Mx64
512MB)
200-pin
32Mx8
DDR333B,
SG564648FD8NWCL
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Untitled
Abstract: No abstract text available
Text: SU564648FD8NWCU January 12, 2005 Ordering Information Part Numbers Description Module Speed SM564648FD8NWCG 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, NonPC2100 @ CL 2.0, 2.5 ECC, 32Mx8 Based, DDR266A, 31.75mm, 22Ω DQ termination. SB564648FD8NWCG 64Mx64 (512MB), DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR266A, 31.75mm, 22Ω DQ termination,
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SU564648FD8NWCU
SM564648FD8NWCG
64Mx64
512MB)
200-pin
NonPC2100
32Mx8
DDR266A,
SB564648FD8NWCG
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS DQ 105°C Horizontal Mounting Type series Horizontal mounting version for φ20 ,φ22 and φ25. Suited for use in flat electronic devices where height space is limited. Adapted to the RoHS directive 2002/95/EC . DQ High Temperature
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2002/95/EC)
120Hz,
120Hz
50pcs.
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS DQ Horizontal Mounting Type, Wide Temperature Range series Horizontal mounting version for φ 20, φ 22 and φ 25. Suited for use in flat electronic devices where height space is limited. DQ High Temperature DM Specifications
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120Hz,
120Hz
50pcs.
8100N
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1500W resistor
Abstract: 12000W SPOT WELDERS 750W Wire wound resistor inductance
Text: TOKEN DQ Tubular Wirewound Power Resistors Wave-type Tubular Wirewound Power Resistors Wave-Shape Ribbon-Wound Design Neutralize Inductance Parasitoid DQ Preview Ribbon-Wound Power Resistor Construction: ● A tubular ceramic has two terminals, and is wound with a resistance element consisting of a
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0000W
1500W resistor
12000W
SPOT WELDERS
750W
Wire wound resistor inductance
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ELPIDA DDR3
Abstract: "DDR3 SDRAM" Elpida EDJ1108BBSE DDR3 DIMM elpida ELPIDA ELPIDA mobile DDR DDR3 DDR3 pins ddr3 tsop ddr3 datasheet
Text: DDR3 SDRAM Feature Comparison of DDR3, DDR2, and DDR SDRAM Items Data rate/pin CLK Freq. Power supply VDD/VDDQ Interface # of Banks Pre-fetch Burst Length Posted CAS, Additive Latency RL,WL ZQ pin /Reset pin DQ Driver impedance (Ron) DQ Driver calibration
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800/1066/1333/1600Mbps
400/533/667/800MHz)
400/533/667/800Mbps
200/266/333/400MHz)
DDR3-1600/1333
EBJ21UE8BASA-AE-E
DDR3-1066)
EBJ21UE8BASA-8C-E
DDR3-800)
EBJ11UE6BASA-AE-E
ELPIDA DDR3
"DDR3 SDRAM"
Elpida EDJ1108BBSE
DDR3 DIMM elpida
ELPIDA
ELPIDA mobile DDR
DDR3
DDR3 pins
ddr3 tsop
ddr3 datasheet
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Untitled
Abstract: No abstract text available
Text: TOKEN DQ Tubular Wirewound Power Resistors Wave-type Tubular Wirewound Power Resistors Wave-Shape Ribbon-Wound Design Neutralize Inductance Parasitoid DQ Preview Ribbon-Wound Power Resistor Construction: ● A tubular ceramic has two terminals, and is wound with a resistance element consisting of a
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0000W
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS DQ 105°C Horizontal Mounting Type series Horizontal mounting version for φ20 ,φ22 and φ25. Suited for use in flat electronic devices where height space is limited. Adapted to the RoHS directive 2002/95/EC . DQ Products which are scheduled to be discontinued.
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2002/95/EC)
120Hz,
120Hz
50pcs.
8100X
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KMM374S823BT-GL
Abstract: KMM374S823BT-G8 KMM374S823BT-GH KM48S8030BT-G MV 42H
Text: KMM374S823BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.
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KMM374S823BT
PC100
100MHz
100MHz
KMM374S823BT-GL
KMM374S823BT-G8
KMM374S823BT-GH
KM48S8030BT-G
MV 42H
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KMM366S424BT-GL
Abstract: CADD-30
Text: KMM366S424BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.
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KMM366S424BT
PC100
100MHz
100MHz
KMM366S424BT-GL
CADD-30
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SX56
Abstract: No abstract text available
Text: SU5643285D8NWCL September 21, 2004 Ordering Information Part Numbers Description Module Speed SM5643285D8NWCL 32Mx64 256MB , DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination. PC2700 @ CL 2.5 SB5643285D8NWCL 32Mx64 (256MB), DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination,
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SU5643285D8NWCL
SM5643285D8NWCL
SB5643285D8NWCL
32Mx64
256MB)
200-pin
32Mx8
DDR333B,
SX56
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KMM366S824BT-G8
Abstract: KMM366S824BT-GH KMM366S824BT-GL
Text: KMM366S824BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.
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KMM366S824BT
PC100
100MHz
100MHz
KMM366S824BT-G8
KMM366S824BT-GH
KMM366S824BT-GL
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Untitled
Abstract: No abstract text available
Text: HB56D25636B-85/10/12-262,144-Word x 36-Blt High Density Dynamic RAM Module Pin Name Pin No. Pin Name 1 ^ ss 37 D Q 17 2 DQo 38 DQ« 3 39 v ss 4 D Q ib DQ, 40 CASO 5 DQ„ 41 CÄS2 6 dq2 42 CÄS3 7 DQ20 DQ, 43 CASI 44 RÄSÖ NC Pin No. • DESCRIPTION
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HB56D25636B-85/10/12------262
144-Word
36-Blt
HB56D25636B
HM514256JP)
256Kbit
HM51256CP)
72-pin
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hb56d25609
Abstract: No abstract text available
Text: HB56D25609A/B-85A/10A/12A 262,144-Word x 9-Bit High Density Dynamic RAM Module P in Name Pin No. 1 Vc c 16 2 CAS 17 Ag 3 DQo 18 NC 4 A« 19 5 A, 20 dq 6 D Q, 21 WE 7 A 2 22 V ss 8 A3 23 dq 9 V ss 24 NC 10 dq 11 a P in No. The HB56A25609 is a 256K x 9 dynamic RAM module, mounted
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HB56D25609A/B-85A/10A/12A
144-Word
HB56A25609
HM514256A)
256Kbit
HM51256)
30-pin
HB56A25609A)
HB56A25609B)
hb56d25609
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DIODE Z54
Abstract: phase shifter digital phase shifter mhz 516 diode z512 ANALOG DIODE PHASE SHIFTER "Phase Shifter"
Text: SELECTION GUIDE SECTION 5 Phase Shifter Selection Guide SERIES SFP/PV-18 DQ, TA, TD, AQ AQ DQ TA TD PQ MQ QQ DP C l Phase Shifter Phase Shifter Phase Shifter Phase Shifter Phase Shifter Phase Shifter Phase Shifter Phase Shifter Phase Shifter Phase Shifter
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SFP/PV-18
Hz-18
DIODE Z54
phase shifter
digital phase shifter mhz
516 diode
z512
ANALOG DIODE PHASE SHIFTER
"Phase Shifter"
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Untitled
Abstract: No abstract text available
Text: Preliminary PC100 SDRAM MODULE KMM366S204CT Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(lnputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T a = 23 °C, f = 1MHz, V
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KMM366S204CT
PC100
2K/32ms
4K/64ms.
KMM366S204CT
2Mx64
1Mx16,
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