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    DPAK-3 THERMAL APPLICATION NOTE Search Results

    DPAK-3 THERMAL APPLICATION NOTE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    DPAK-3 THERMAL APPLICATION NOTE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Application Note AN821

    Abstract: 71622
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN821 PowerPAK SO-8 Mounting and Thermal Considerations by Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 m and with the capability to


    Original     		PDF AN821 16-Mai-13 Application Note AN821 71622

    smd-transistor DATA BOOK

    Abstract: power mosfet smd package smd-transistor -1.am MOSFET SMD package soldering fundamentals smd transistor book SMD 251 transistor A 9 smd transistor mosfet SMD SMD books
    Text: Power Transistors in SMD Packages: Calculating Power Dissipation the Right Way More and more power transistors are being offered in surface mount variants of power packages. When calculating maximum permissible power dissipation, designers must take note of the different definitions of this parameter for SMD and power packages. When


    Original     		PDF O-251 OT-223 smd-transistor DATA BOOK power mosfet smd package smd-transistor -1.am MOSFET SMD package soldering fundamentals smd transistor book SMD 251 transistor A 9 smd transistor mosfet SMD SMD books

    PowerPAK SO-8

    Abstract: No abstract text available
    Text: Si7384DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V 18 0.0125 at VGS = 4.5 V 14 S RoHS COMPLIANT • High-Side DC/DC Conversion - Notebook - Desktop - Server 5.15 mm


    Original     		PDF Si7384DP Si7384DP-T1-E3 Si7384DP-T1-GE3 11-Mar-11 PowerPAK SO-8

    Untitled

    Abstract: No abstract text available
    Text: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server


    Original     		PDF Si7336ADP Si7336ADP-T1-E3 Si7336ADP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7390DP Vishay Siliconix N-Channel 30 V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 15 0.0135 at VGS = 4.5 V 13 APPLICATIONS PowerPAK SO-8 S 6.15 mm • High-Side DC/DC Conversion - Notebook - Server


    Original     		PDF Si7390DP 2002/95/EC Si7390DP-T1-E3 Si7390DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm


    Original     		PDF Si7634BDP Si7634BDP-T1-E3 Si7634BDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 VDS (V) 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch


    Original     		PDF SiR484DP SiR484DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7447ADP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 30 0.0065 at VGS = - 10 V - 35 100 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 APPLICATIONS S 3 D D 7 S • Battery and Load Switching - Notebook Computers


    Original     		PDF Si7447ADP Si7447ADP-T1-E3 Si7447ADP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR466DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 40g 0.0051 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC S • DC/DC Converter - Low Side Switch • Notebook PC • Graphic Cards


    Original     		PDF SiR466DP SiR466DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7384DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V 18 0.0125 at VGS = 4.5 V 14 S RoHS COMPLIANT • High-Side DC/DC Conversion - Notebook - Desktop - Server 5.15 mm


    Original     		PDF Si7384DP Si7384DP-T1-E3 Si7384DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7390DP Vishay Siliconix N-Channel 30 V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 15 0.0135 at VGS = 4.5 V 13 APPLICATIONS PowerPAK SO-8 S 6.15 mm • High-Side DC/DC Conversion - Notebook - Server


    Original     		PDF Si7390DP 2002/95/EC Si7390DP-T1-E3 Si7390DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server


    Original     		PDF Si7336ADP Si7336ADP-T1-E3 Si7336ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiR172DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () 30 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 Qg (Typ.) 9.8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • Notebook CPU Core - High-Side Switch


    Original     		PDF SiR172DP 2002/95/EC SiR172DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) (Ω) 20 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch


    Original     		PDF SiR484DP SiR484DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7447ADP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 30 0.0065 at VGS = - 10 V - 35 100 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 APPLICATIONS S 3 D D 7 S • Battery and Load Switching - Notebook Computers


    Original     		PDF Si7447ADP Si7447ADP-T1-E3 Si7447ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core


    Original     		PDF Si7758DP 2002/95/EC Si7758DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core


    Original     		PDF Si7758DP 2002/95/EC Si7758DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 VDS (V) 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch


    Original     		PDF SiR484DP SiR484DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm


    Original     		PDF Si7634BDP Si7634BDP-T1-E3 Si7634BDP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiR172ADP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. 30 ID (A)a, g 0.0085 at VGS = 10 V 24 0.0105 at VGS = 4.5 V 24 Qg (Typ.) 12.8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Notebook CPU Core 5.15 mm 1


    Original     		PDF SiR172ADP SiR172ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiR474DP

    Abstract: SIR474
    Text: SiR474DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Notebook CPU Core - High-Side Switch


    Original     		PDF SiR474DP SiR474DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR474

    Untitled

    Abstract: No abstract text available
    Text: SiR172DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () 30 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 Qg (Typ.) 9.8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • Notebook CPU Core - High-Side Switch


    Original     		PDF SiR172DP 2002/95/EC SiR172DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiR172DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 APPLICATIONS G 4 • Notebook CPU Core


    Original     		PDF SiR172DP 2002/95/EC SiR172DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiR474DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Notebook CPU Core - High-Side Switch


    Original     		PDF SiR474DP SiR474DP-T1-GE3 11-Mar-11