5M MARKING CODE DIODE SMC
Abstract: No abstract text available
Text: NTD4302 Power MOSFET 18.5 Amps, 30 Volts N–Channel DPAK Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature
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NTD4302
5M MARKING CODE DIODE SMC
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n02r
Abstract: T60 N02R dpak DIODE 948 T60N02R 60N02R 60N02 ntd60n02rg 100 amp mosfet NTD60N02R T 948
Text: NTD60N02R Power MOSFET 62 Amps, 24 Volts N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
n02r
T60 N02R
dpak DIODE 948
T60N02R
60N02R
60N02
ntd60n02rg
100 amp mosfet
NTD60N02R
T 948
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P3NK60ZFP
Abstract: p3nk60z D3NK60Z STP3NK60ZFP D3nk6 p3nk60 P3NK60ZF STD3NK60Z-1 d3nk STP3NK60Z
Text: STP3NK60Z - STP3NK60ZFP STD3NK60Z - STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE STP3NK60Z STP3NK60ZFP STD3NK60Z STD3NK60Z-1 • ■ ■ ■ ■ ■ VDSS R DS on 600 600
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O-220/TO-220FP/DPAK/IPAK
STP3NK60Z
STP3NK60ZFP
STD3NK60Z
STD3NK60Z-1
O-220
P3NK60ZFP
p3nk60z
D3NK60Z
D3nk6
p3nk60
P3NK60ZF
STD3NK60Z-1
d3nk
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Untitled
Abstract: No abstract text available
Text: STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 600 600
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STP3NK60Z
STP3NK60ZFP
STB3NK60Z-STD3NK60Z-STD3NK60Z-1
O-220/FP/D2PAK/DPAK/IPAK
STP3NK60Z
STB3NK60Z
STD3NK60Z
STD3NK60Z-1
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p3nk60z
Abstract: P3NK60ZFP b3nk60z d3nk60z STD3NK60ZT4
Text: STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 • ■ ■ ■ ■ ■ VDSS R DS on 600
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STP3NK60Z
STP3NK60ZFP
STB3NK60Z-STD3NK60Z-STD3NK60Z-1
O-220/FP/D2PAK/DPAK/IPAK
STP3NK60Z
STB3NK60Z
STD3NK60Z
STD3NK60Z-1
p3nk60z
P3NK60ZFP
b3nk60z
d3nk60z
STD3NK60ZT4
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D3nk6
Abstract: B3NK60Z p3nk60 p3nk60z p3nk60zfp d3nk60z d3nk Zener Diode B1 2 P3NK B3NK
Text: STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 600 600
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STP3NK60Z
STP3NK60ZFP
STB3NK60Z-STD3NK60Z-STD3NK60Z-1
O-220/FP/D2PAK/DPAK/IPAK
STB3NK60Z
STD3NK60Z
STD3NK60Z-1
O-220
D3nk6
B3NK60Z
p3nk60
p3nk60z
p3nk60zfp
d3nk60z
d3nk
Zener Diode B1 2
P3NK
B3NK
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D3nk6
Abstract: B3NK60Z p3nk60 p3nk60z P3NK60ZFP d3nk60z l9815 P3NK6 d3nk STB3NK60Z-STD3NK60Z-STD3NK60Z-1
Text: STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 600 600
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STP3NK60Z
STP3NK60ZFP
STB3NK60Z-STD3NK60Z-STD3NK60Z-1
O-220/FP/D2PAK/DPAK/IPAK
STB3NK60Z
STD3NK60Z
STD3NK60Z-1
O-220
D3nk6
B3NK60Z
p3nk60
p3nk60z
P3NK60ZFP
d3nk60z
l9815
P3NK6
d3nk
STB3NK60Z-STD3NK60Z-STD3NK60Z-1
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p3nk60zfp
Abstract: D3nk6 p3nk60z B3NK60Z d3nk60z p3nk60zfp datasheet p3nk60 D3NK transistor P3NK60ZFP STP3NK60ZFP
Text: STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 600 600
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STP3NK60Z
STP3NK60ZFP
STB3NK60Z-STD3NK60Z-STD3NK60Z-1
O-220/FP/D2PAK/DPAK/IPAK
STP3NK60Z
STB3NK60Z
STD3NK60Z
STD3NK60Z-1
p3nk60zfp
D3nk6
p3nk60z
B3NK60Z
d3nk60z
p3nk60zfp datasheet
p3nk60
D3NK
transistor P3NK60ZFP
STP3NK60ZFP
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T60 N02R
Abstract: T60N02R 60N02R 60N02 n02r
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.4 mW @ 10 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip
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NTD60N02R
NTD60N02R/D
T60 N02R
T60N02R
60N02R
60N02
n02r
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T60 N02R
Abstract: T60N02R MOSFEt t60 n02r T 60 N02R 60N02R 60N02 369D N02R NTD60N02R NTD60N02RT4
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.0 mW @ 4.5 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip
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NTD60N02R
NTD60N02R/D
T60 N02R
T60N02R
MOSFEt t60 n02r
T 60 N02R
60N02R
60N02
369D
N02R
NTD60N02R
NTD60N02RT4
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T60N02R
Abstract: No abstract text available
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
T60N02R
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t60n02r
Abstract: T60 N02R 60N02R T 60 N02R 60N02
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
NTD60N02R/D
t60n02r
T60 N02R
60N02R
T 60 N02R
60N02
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t3055vl
Abstract: 3055VL T30-55VL 418B-03 5M MARKING CODE DIODE SMC MTD3055VLT4
Text: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTD3055VL
t3055vl
3055VL
T30-55VL
418B-03
5M MARKING CODE DIODE SMC
MTD3055VLT4
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Untitled
Abstract: No abstract text available
Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD60N02R
r14525
NTD60N02R/D
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Untitled
Abstract: No abstract text available
Text: NTD3055-094 Advance Information Power MOSFET 12 Amps, 60 Volts N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 12 AMPERES 60 VOLTS RDS on = 94 mΩ
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NTD3055-094
tpv10
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Untitled
Abstract: No abstract text available
Text: New Product VS-5EWH06FNHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 5 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery 2, 4 • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation 1 N/C
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VS-5EWH06FNHM3
J-STD-020,
O-252AA)
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: VS-5EWH06FNHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 5 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery 2, 4 • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation 1 N/C • Low forward voltage drop
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VS-5EWH06FNHM3
J-STD-020,
O-252AA)
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: New Product VS-5EWH06FNHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 5 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery 2, 4 • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation 1 N/C
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VS-5EWH06FNHM3
J-STD-020,
O-252AA)
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: NGD15N41CL Product Preview Ignition IGBT 15 Amps, 410 Volts N–Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGD15N41CL
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E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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l1n06c
Abstract: 5M 365 R tsop6 marking 312 sot363 ON Marking DS L1N06 MLD1N06CL
Text: MLD1N06CL Preferred Device SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N–Channel DPAK The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit MCU . Ideal applications
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MLD1N06CL
MLD1N06CL
l1n06c
5M 365 R
tsop6 marking 312
sot363 ON Marking DS
L1N06
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TSSOP-8 footprint and soldering sot-23
Abstract: No abstract text available
Text: MTB50N06V Preferred Device Power MOSFET 42 Amps, 60 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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MTB50N06V
TSSOP-8 footprint and soldering sot-23
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diode 1407
Abstract: FT107
Text: MMFT107T1 Preferred Device Power MOSFET 250 mA, 200 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and relay drivers. The device is housed in the SOT–223
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MMFT107T1
diode 1407
FT107
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Untitled
Abstract: No abstract text available
Text: NIB6404-5L Preferred Device Product Preview SMARTDISCRETESt 52 Amps, 40 Volts Self Protected with Temperature Sense N–Channel D2PAK http://onsemi.com SMARTDISCRETES devices are an advanced series of Power MOSFETs which utilize ON Semiconductor’s latest MOSFET
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NIB6404-5L
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