COACH 11
Abstract: No abstract text available
Text: Analyzing a Sample INPRISE * JBuilder* 2 Application Using the VTune Performance Analyzer 4.0 int i; long startTime, endTime; double dk[] = new double [3000]; double dx[] = new double [3000]; double dy[] = new double [3000]; double dz[] = new double [3000];
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K7Z327285M
Abstract: No abstract text available
Text: K7Z327285M Preliminary 512Kx72 DLW Double Late Write RAM Document Title 512Kx72 DLW(Double Late Write) RAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Device name change from Double Late Write SigmaRAM to Double Late Write RAM
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K7Z327285M
512Kx72
512Kx72
11x19
00x10
00x18
K7Z327285M
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ZJY-M4A
Abstract: tdk zjy-M4A ISO7816-3 PDIUSBD12 TDA8008 AN00010 PDIUSBD12 schematic USB Smart Card Reader "USB reader"
Text: APPLICATION NOTE TDA8008 Mask D06 DOUBLE USB SMART CARD READER AN/00010 Philips Semiconductors Application Note AN00010 TDA8008H mask D 06 Double usb smart card reader ABSTRACT This document describes the software specifications that have been developed for the double USB smart
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TDA8008
AN/00010
AN00010
TDA8008H
PDIUSBD12.
TDA8008,
ZJY-M4A
tdk zjy-M4A
ISO7816-3
PDIUSBD12
AN00010
PDIUSBD12 schematic
USB Smart Card Reader
"USB reader"
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V23084-C2001-A303
Abstract: v23084 V23084-C2002-A303 V23084-C2001-A403 V23084-C2002-A403 Tyco* V23084 Tyco v23084-c2001-a303 v23084-c2001-a303 tyco v23084c2001 V23084-C2002
Text: Automotive Relays PCB Double Relays Double Mini Relay DMR n Limiting continuous current 30 A Typical applications Car alarm, door control, door lock, immobilizer, seat control, sun roof, window lifter, wiper control. F084_fcw2c_bw Contact arrangement 2 form C, 2 CO
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12VDC
20/20A30/30A18/18A30/30A
20/20A
30/30A2
18/18A30/30A2)
15/15A30/30A12/12A30/30A
35A35A35A35A
30/300mV
AgSnO20-1393267-6
V23084-C2001-A303
v23084
V23084-C2002-A303
V23084-C2001-A403
V23084-C2002-A403
Tyco* V23084
Tyco v23084-c2001-a303
v23084-c2001-a303 tyco
v23084c2001
V23084-C2002
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v23084
Abstract: V23084-C2001-A303 V23084-C2001-A403 V23084-C2002-A403 V23084-C2002-A303 Tyco* V23084 Tyco v23084-c2001-a303 12vdc motor immobilizer for alarm relay V23084-C2001-A303
Text: Automotive Relays PCB Double Relays Double Mini Relay DMR Q Q Limiting continuous current 30 A Easiest PCB routing among all PCB relays Typical applications Car alarm, door control, door lock, immobilizer, seat control, sun roof, window lifter, wiper control.
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20/20A
30/30A2)
18/18A
15/15A
30/30A
12/12A
30/300mV
v23084
V23084-C2001-A303
V23084-C2001-A403
V23084-C2002-A403
V23084-C2002-A303
Tyco* V23084
Tyco v23084-c2001-a303
12vdc motor
immobilizer for alarm
relay V23084-C2001-A303
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smart card tda8004
Abstract: tda 8052 TDA 7816 iso7816 Smart Cards Reader tda8006 smart card programming 80C52 ISO7816-3 MAX232C TDA8004 TDA8006
Text: APPLICATION NOTE TDA8006 mask n°12 DOUBLE SMART CARD READER USING TDA8006 AND TDA8004 INTERFACES AN /97074 Philips Semiconductors TDA8006 mask n°12 Double smart card reader using TDA8006 and TDA8004 Application Note AN97074 ABSTRACT This document describes the software specifications that have been developped for the double
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TDA8006
TDA8004
TDA8004
AN97074
CAKE-609A.
TDA8004.
smart card tda8004
tda 8052
TDA 7816
iso7816 Smart Cards Reader tda8006
smart card programming
80C52
ISO7816-3
MAX232C
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three phase sine wave pwm circuit
Abstract: ADMC300 AN300-03 space-vector PWM pwm sinewave INVERTER
Text: a Double Update Mode of PWM Generation Unit of the ADMC300 AN300-02 a Double Update Mode of PWM Generation Unit of the ADMC300 AN300-02 Analog Devices Inc., January 2000 Page 1 of 9 a Double Update Mode of PWM Generation Unit of the ADMC300 AN300-02 Table of Contents
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ADMC300
AN300-02
three phase sine wave pwm circuit
ADMC300
AN300-03
space-vector PWM
pwm sinewave INVERTER
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ADMC331
Abstract: ON AH AN331-02 space-vector PWM three phase sine wave pwm circuit AN331-03 pwm sinewave INVERTER
Text: a Double Update Mode of PWM Generation Unit of the ADMC331 AN331-02 a Double Update Mode of PWM Generation Unit of the ADMC331 AN331-02 Analog Devices Inc., January 2000 Page 1 of 9 a Double Update Mode of PWM Generation Unit of the ADMC331 AN331-02 Table of Contents
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ADMC331
AN331-02
ADMC331
ON AH
AN331-02
space-vector PWM
three phase sine wave pwm circuit
AN331-03
pwm sinewave INVERTER
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ADMC401
Abstract: an401-03 pwm sinewave INVERTER AN401
Text: a Double Update Mode of PWM Generation Unit of the ADMC401 AN401-02 a Double Update Mode of PWM Generation Unit of the ADMC401 AN401-02 Analog Devices Inc., January 2000 Page 1 of 9 a Double Update Mode of PWM Generation Unit of the ADMC401 AN401-02 Table of Contents
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ADMC401
AN401-02
ADMC401
an401-03
pwm sinewave INVERTER
AN401
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46LR16200C
Abstract: Mobile DDR SDRAM 43LR16200C
Text: IS43LR16200C 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N
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IS43LR16200C
16Bits
IS43LR16200C
IS43LR16200C-6BL
60-ball
IS43LR16200C-6BLI
-40oC
2Mx16
46LR16200C
Mobile DDR SDRAM
43LR16200C
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Mobile DDR SDRAM
Abstract: 43LR32100C IS43LR32100C
Text: IS43LR32100C Advanced Information 512K x 32Bits x 2Banks Mobile DDR SDRAM Description The IS43LR32100C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N
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IS43LR32100C
32Bits
IS43LR32100C
1Mx32
IS43LR32100C-6BL
90-ball
IS43LR32100C-6BLI
Mobile DDR SDRAM
43LR32100C
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IRC5
Abstract: No abstract text available
Text: TC59LM913/05AMG-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 8,388,608-WORDS x 4 BANKS × 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDS × 4 BANKS × 8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM913/05AMG is a CMOS Double Data Rate Fast Cycle Random Access Memory DDR-FCRAMTM
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TC59LM913/05AMG-50
608-WORDS
16-BITS
216-WORDS
TC59LM913/05AMG
TC59LM913AMG
TC59LM905AMG
IRC5
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Untitled
Abstract: No abstract text available
Text: TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDS × 4 BANKS × 8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06CFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR FCRAMTM
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TC59LM814/06CFT-50
304-WORDS
16-BITS
608-WORDS
TC59LM814/06CFT
TC59LM814CFT
TC59LM806CFT
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Untitled
Abstract: No abstract text available
Text: TC59LM913/05AMG-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 8,388,608-WORDS x 4 BANKS × 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDS × 4 BANKS × 8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM913/05AMG is a CMOS Double Data Rate Fast Cycle Random Access Memory DDR -FCRAMTM
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TC59LM913/05AMG-50
608-WORDS
16-BITS
216-WORDS
TC59LM913/05AMG
TC59LM913AMG
TC59LM905AMG
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Untitled
Abstract: No abstract text available
Text: IS43LR16200C Advanced Information 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N
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IS43LR16200C
16Bits
IS43LR16200C
2Mx16
IS43LR16200C-6BL
60-ball
IS43LR16200C-6BLI
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Untitled
Abstract: No abstract text available
Text: I S43LR32100C Advanced Information 512K x 32Bits x 2Banks Mobile DDR SDRAM Description The IS43LR32100C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N
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S43LR32100C
32Bits
IS43LR32100C
1Mx32
IS43LR32100C-6BL
90-ball
IS43LR32100C-6BLI
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46LR32100C
Abstract: Mobile DDR SDRAM 43LR32100C
Text: IS43LR32100C IS46LR32100C 512K x 32Bits x 2Banks Mobile DDR SDRAM Description The IS43/46LR32100C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N
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IS43LR32100C
IS46LR32100C
32Bits
IS43/46LR32100C
1Mx32
IS43LR32100C-6BL
90-ball
IS43LR32100C-6BLI
-40oC
46LR32100C
Mobile DDR SDRAM
43LR32100C
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Untitled
Abstract: No abstract text available
Text: TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDS × 4 BANKS × 8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06CFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR FCRAMTM
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TC59LM814/06CFT-50
304-WORDS
16-BITS
608-WORDS
TC59LM814/06CFT
TC59LM814CFT
TC59LM806CFT
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Untitled
Abstract: No abstract text available
Text: I S43LR16200C Advanced Information 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N
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S43LR16200C
16Bits
IS43LR16200C
2Mx16
IS43LR16200C-6BL
60-ball
IS43LR16200C-6BLI
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satellite tuner sharp
Abstract: sharp lnb sharp rf tuners bsf* satellite tuner BSFR53G03 BSFR53G06 BSFR53G07 BSFZ57G05 0438 BSFZ
Text: PRODUCT INFORMATION BSFR/Z-Series Double Conversion IF Output Satellite Tuner NEW HIGH PERFORMANCE DOUBLE CONVERSION TUNERS FEATURING PRESCALER CAPABILITY. APPLICATIONS: • Satellite receiver • Data receiver RF Components Group STANDARD BSFR PACKAGE
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SMA99033
satellite tuner sharp
sharp lnb
sharp rf tuners
bsf* satellite tuner
BSFR53G03
BSFR53G06
BSFR53G07
BSFZ57G05
0438
BSFZ
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v23084
Abstract: A303 Tyco* V23084 relay v23084 A403 IEC 68-2-6 Vibration V23084-S relay A303 mini relays relay v23084 A303 ECR1650-B
Text: Twin relays Double mini relays DMR and DMR-S Powertrain Systems Chassis Systems Safety Security Body Driver Information Convenience Features - Two separate systems - Lamp applications - Extremely space saving double relay - Silent version available DMR-S
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Untitled
Abstract: No abstract text available
Text: EM42CM1684RTA Revision History Revision 0.1 Jan. 2012 - First release. www.eorex.com Jan. 2012 1/22 EM42CM1684RTA 1Gb (16Mx4Bank×16) Double DATA RATE SDRAM Features Description • Internal Double-Date-Ratearchitecture with twice accesses per clock cycle.
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EM42CM1684RTA
22BSC
71REF
875BSC
028REF
76BSC
463BSC
16BSC
400BSC
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Untitled
Abstract: No abstract text available
Text: METALLIZED POLYPROPYLENE DOUBLE METALLIZED MP88R - Radial Box MP88D - Radial Epoxy Dipped MP880 - Axial Oval MP88 - Axial Round FEATURES: METALLIZED POLYPROPYLENE DOUBLE METAL • ■ ■ ■ APPLICATIONS: Extended double sided metallized film Non-Inductive construction
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OCR Scan
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MP88R
MP88D
MP880
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Untitled
Abstract: No abstract text available
Text: ^ 1-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-W 0RDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM
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TC59LM814/06CFT
TC59LM814CFT
304-words
TC59LM806CFT
TC59LM614/06CFT-50
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