SIR312P
Abstract: SIR312 3000W with PCB SIR222 250V 30A PCB RELAY SIF312 24V 5A VDE RELAY SIR222P SEV 1011 socket 16a 16a gg
Text: 6*5= 6DIHW\ ZLWKRXWFRPSURPLVH 5HOD\GDWD *HQHUDOGDWD 'LDJUDPPHV 3&%UHOD\ZLWKIRUFLEO\JXLGHGFRQWDFWV 3URWHFWLYHVHSDUDWLRQEHWZHHQFRLODQG FRQWDFWV OHDNDJHDQGFUHHSLQJGLVWDQFHV !PP SURWHFWLYHVHSDUDWLRQGLDJRQDOO\ EHWZHHQOHIWDQGULJKWFRQWDFWVLGH OHDNDJH
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242V0V
SIR312P
SIR312
3000W with PCB
SIR222
250V 30A PCB RELAY
SIF312
24V 5A VDE RELAY
SIR222P
SEV 1011 socket 16a
16a gg
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CO2P
Abstract: Hitachi DSA0092 PDF00002 hitachi labeling
Text: Preliminary Technical Data v0.4, July, 1999 MDS/R4212A 12-channel Optical Interconnect Modules Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products which are under development and for which reliability testing has not been
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MDS/R4212A
12-channel
MDS4212A
MDR4212A
12-ch
CO2P
Hitachi DSA0092
PDF00002
hitachi labeling
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Untitled
Abstract: No abstract text available
Text: intJ. 2-MBIT 128K x 16, 256K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F200BL-T/B, 28F002BL-T/B m Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6 V • Automatic Power Savings Feature — 0.8 mA Typical Ice Active Current in
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28F200BL-T/B,
28F002BL-T/B
x8/x16
28F200BL-T,
28F200BL-B
16-bit
32-bit
28F002BL-T,
28F002BL-B
16-KB
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Untitled
Abstract: No abstract text available
Text: !» GEC P L E S S E Y S e p te m b e r 1995 PRELIMINARY INFORMATION SEMICONDUCTORS DS3112-2.0 P1480 LAN CAM 1kx64-BIT CMOS CONTENT-ADDRESSABLE MEMORY S u p e rs e d e s F e b ru a ry 1 9 9 2 ed itio n The P1480 LAN CAM is a 1K X 64-bit fixed-widlh CMOS Content-addressable Memory (CAM aimed at address
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DS3112-2
P1480
1kx64-BIT
P1480
64-bit
D05S4Q2
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Untitled
Abstract: No abstract text available
Text: w t GEC P LESS EY S I M I C O N I I I O K S P1480 LAN CAM 1KX64-BIT CMOS CONTENT-ADDRESSABLE MEMORY (SUPERSEDES SEPTEMBER 1993 EDITIO N The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory (CAM) aimed at address filtering applications in Local-area Network (LAN) bridges
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P1480
1KX64-BIT
P1480
64-bit
37bflS22
37b6S22
28-LEAD
52-LEAD
37bfiS22
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DLS FT 031
Abstract: fa 5571 44PIN DL10 SM5837AF SICK
Text: fc T HH o a 3 •^f-t ¿ v$ 4 B? rx si ä mí 4d £ Ota M; 1 ~r a w rr\ 4^ g A “if k . 3| V m e> <i *0 U1 v' H \Ji H A r fX u M» V v. ~7* I /• ~r Ml I EE V. V CJ1 >- > to EEm H \ < oo la % <' Ml Ml □ìli 4 ~\ Moto m V g V Ml Ä I X HS i s *21 SS » V Ml
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SM5837AF
44PIN
d131x
3iid18
2SD01I
DLO-10
DL3-30
T329-28Â
DLS FT 031
fa 5571
DL10
SM5837AF
SICK
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Untitled
Abstract: No abstract text available
Text: OKI Sem iconductor MSM5416273 P relim inary 262,144 -Word x 16 Bits Multiport DRAM_ Rev.t.o GENERAL DESCRIPTION* The MSM5416273 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and
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MSM5416273
MSM5416273
144-word
16-bit
512-words
16-bits
2424D
b7E4240
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A15A
Abstract: A15B EDI8L21664V MO-151 TMS320C54X 9704
Text: ^EDI EDI8L21664V M ELECTRONIC DESIGNS. INC 2x64Kx16SRAM TMS320C54X External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith two 64Kx16 die mounted on a m ulti • Texas Instruments TMS320C54x
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EDI8L21664V
2x64Kx16SRAM
TMS320C54x
MO-151
EDI8L21664VxxBC
2x64Kx16
64Kx16
EDI8L21664V10BC
EDI8L21664V12BC
A15A
A15B
EDI8L21664V
MO-151
9704
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Untitled
Abstract: No abstract text available
Text: " H Y U H D A I — • HYM5V64404C K-Series Unbuffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V64404C K-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V16404C in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy
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HYM5V64404C
4Mx64
4Mx64-bit
HY51V16404C
HYM5V64404CKG/CTKG
168-Pin
256ms
A0-A11)
DQ0-63)
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Untitled
Abstract: No abstract text available
Text: E2L0036-17-Y1 O K I Semiconductor P revious version: Dec. 1996 MSM548332 278,400-Word x 12-Bit Field Memory DESCRIPTION The MSM548332 is a 3.3-Mbit, 960 bits x 290 lines, Field Memory. Access is done line by line. The line address m ust be set each time a line is changed.
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E2L0036-17-Y1
MSM548332
400-Word
12-Bit
MSM548332
MSM548332s
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Data v0.4, July, 1999 HITACHI MDS/R4212A_ 12-channel Optical Interconnect Modules Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of
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MDS/R4212A_
12-channel
MDS/R4212A
MDS4212A
MDR4212A
12-ch
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TE28F160B3B120
Abstract: 29058
Text: intei PRELIMINARY SMART 3 ADVANCED BOOT BLOCK 4-MBIT, 8-MBIT, 16-MBIT FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3 • Flexible SmartVoltage Technology — 2.7V-3.6V Program/Erase — 2.7V-3.6V Read Operation — 12V V pp Fast Programming ■ 2.7V or 1.8V I/O Option
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16-MBIT
28F400B3,
28F800B3,
28F160B3
48-Ball
48-Lead
4fl2bl75
1997Flash
AP-617
TE28F160B3B120
29058
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Untitled
Abstract: No abstract text available
Text: “HYUNDAI HY514370B JSeries 256K X 16-blt CMOS ORAM with 2 WE & WPB PRELIMINARY DESCRIPTION The HY514370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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HY514370B
16-blt
16-bit
400mil
40pin
40/44pin
4OU10-Z62]
72K18
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Untitled
Abstract: No abstract text available
Text: •an ‘AHlSnaN I S0IN0H10313 N O U V I A V NVdVP 9SE00LPS I CA3U ‘EOOZ O) IHOIHAdOO 33dd •AdViaiddOdd -Aia H0103NNOO 3VP ( 1 H0 I3M)¥1 •QddV ( ’ON ONIMVaa)^-#MH CO 'QddV 0 0 2 Id-L N - 0 9 d A - d * - d M • a n ‘A H i s n a N i S0IN0dl0313
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S0IN0H10313
9SE00LPS
H0103NNOO
S0IN0dl0313
S310NV
30NVH3H01
HVH3N30
319V1
H0103NN00
310A03H
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D010
Abstract: DIN11 MSM548332 sm548332
Text: E2L0036-17-Y1 O K I Semiconductor MSM548332 P re v io u s version: Dec. 1996 ~ 278,400-Word x 12-Bit Field Memory DESCRIPTION The MSM548332 is a 3.3-Mbit, 960 bits x 290 lines, Field Memory. Access is done line by line. The line ad d ress m ust be set each tim e a line is changed.
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E2L0036-17-Y1
MSM548332
400-Word
12-Bit
MSM548332
MSM548332s
D010
DIN11
sm548332
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Untitled
Abstract: No abstract text available
Text: 0 M F (f3 [M Æ n r0 ® K ] in te i A28F200BX-T/B 2-MBIT (128K x 16,256K x 8 BOOT BLOCK FLASH MEMORY FAMILY Automotive x8/x16 Input/Output Architecture — A28F200BX-T, A28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs Optimized High Density Blocked
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A28F200BX-T/B
x8/x16
A28F200BX-T,
A28F200BX-B
16-bit
32-bit
A28F200BX-T/B
AB28F200BX-T90
AB28F200BX-B90
A28F400BX
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Untitled
Abstract: No abstract text available
Text: E2L0037-17-Y1 O K I Semiconductor Previous version: Dec. 1996 M S M 548331 222,720-Word x 12-Bit Field Memory DESCRIPTION The MSM548331 is a 2.7-Mbit, 768 bits x 290 lines, Field Memory. Access is done line by line. The line address m ust be set each time a line is changed.
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E2L0037-17-Y1
720-Word
12-Bit
MSM548331
MSM548331s
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Untitled
Abstract: No abstract text available
Text: P1480 LAN CAM CHAPTER 1 INTRODUCTION 1.1 GENERAL DESCRIPTION The P1480 LAN CAM is a 1K x 64-bit Content-addressable Memory CAM which is targeted at address filtering applications in Local Area Network (LAN) Bridges. Although some of the aspects of this device are tuned specifically to
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P1480
64-bit
16-bit
37bflSSE
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM548331 222,720-W ord x 12-Bit Field M em ory DESCRIPTION The MSM548331 is a 2.7-Mbit, 768bits x 290lines, Field Memory. Access is done line by line. The line address must be set each time a line is changed. More than two MSM548331s can be cascaded directly without any delay devices between them.
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MSM548331
12-Bit
MSM548331
768bits
290lines,
MSM548331s
c548331
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D010
Abstract: DIN11 MSM548331 MSM548331TS-K
Text: E2L0037-17-Y1 O K I Semiconductor P re v io u s version: Dec. 1996 MSM548331 ~ 222,720-Word x 12-Bit Field Memory DESCRIPTION The MSM548331 is a 2.7-Mbit, 768 bits x 290 lines, Field Memory. Access is done line by line. The line ad d ress m ust be set each tim e a line is changed.
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E2L0037-17-Y1
MSM548331
720-Word
12-Bit
MSM548331
MSM548331s
D010
DIN11
MSM548331TS-K
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MSM5416273
Abstract: No abstract text available
Text: OKI Semiconductor MSM 5 4 1 6 2 7 3 P relim inary 262,144 -Word x 16 Bits Multiport DRAM Rev.t.o GENERAL DESCRIPTION* The MSM5416273 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and
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MSM5416273_
MSM5416273
144-word
16-bit
512-words
16-bits
SSOP64-P-525-0
2424D
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sicet 110
Abstract: D716 d717 id46 11 0741 ami 8121 B121 S332 d715 132121
Text: SD-39B60-01L 5.00 [.2001 V 0 1 .4 0 I .0 5 5 1 RECOMMENDED PLATED THRU HOLE PATTERN SCALE 2; I N0TE5: MATERIAL* 5EE TABLE r N(-SI-E9,: SEE TABLE PRODUCT SPECIFICATION* NOT REQUIRED PACKAGING: NOT REQUIRED MATE5 WITH* NOf€ "XX* REFERS TO THE QUANTITY OF CIRCUIT POSITIONS.
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SD-39B60-01L
BRA55
39042-D724
12-OfcOl
12-Db-aj
B619XX
SD-3986D011
PERMI55
sicet 110
D716
d717
id46
11 0741
ami 8121
B121
S332
d715
132121
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY S IM I ( \ I) ma3175i Memory Management Unit & Block Protect Unit I: (Advanced data) S10212ADF Issue 1.1 December 1990 Features Block Diagram M A 31751 • Radiation Hard CMOS/SOS Technology CPU B U SSES • User Configurable as Either a Memory
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ma3175i
S10212ADF
DOO-16
3x10io
1x1012
1x1015
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Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y 5 1 1 6 8 1 S e r i e s 2M x 8-bit CMOS DRAM with WPB DESCRIPTION The HY5116810 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5116810 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116810
1AD09-10-MAY94
HY5116810JC
HY5116810SLJC
HY5116810TC
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