Untitled
Abstract: No abstract text available
Text: S60D150C – S60D200C 60A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability
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S60D150C
S60D200C
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s60d40c
Abstract: s60d40
Text: S60D30C – S60D100C 60A DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability
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S60D30C
S60D100C
s60d40c
s60d40
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER SWITCHING DIODE SD103AW - SD103CW SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band SD103AW=S4 SD103BW=S5 SD103CW=S6 ABSOLUTE MAXIMUM RATINGS
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SD103AW
SD103CW
OD-123
SD103BW
SD103CW
C-120
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SD103AW
Abstract: SD103BW SD103CW continental SOD123 103CW
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER SWITCHING DIODE SD103AW - SD103CW SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band SD103AW=S4 SD103BW=S5 SD103CW=S6 ABSOLUTE MAXIMUM RATINGS
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SD103AW
SD103CW
OD-123
SD103BW
SD103CW
C-120
continental SOD123
103CW
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BAS40L
Abstract: marking code s6 SOD-882L
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
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M3D891
BAS40L
OD882
MDB391
SCA75
613514/01/pp8
BAS40L
marking code s6
SOD-882L
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PDF
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smd schottky diode s6
Abstract: smd schottky diode marking s6 smd schottky diode s6 16 marking code s6 diode smd marking code 76
Text: DISCRETE SEMICONDUCTORS DATA SHEET 1PS76SB62 Schottky barrier diode Product specification Supersedes data of 2001 Feb 16 2004 Jan 26 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB62 FEATURES PINNING • Ultra high switching speed
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1PS76SB62
1PS76SB62
OD323
SC-76)
SCA76
R76/02/pp7
smd schottky diode s6
smd schottky diode marking s6
smd schottky diode s6 16
marking code s6
diode smd marking code 76
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JEDEC sod323
Abstract: smd schottky diode s6 1PS76SB62 13845 1PS66SB62 SC-76 diode smd marking code 76 smd schottky diode marking s6 philips package information
Text: 1PS66SB62; 1PS76SB62 40 V, 20 mA low Cd Schottky barrier diodes Rev. 03 — 24 November 2004 Product data sheet 1. Product profile 1.1 General description Planar low capacitance Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in very small SMD plastic packages.
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1PS66SB62;
1PS76SB62
1PS66SB62
OT666
OD323
SC-76
JEDEC sod323
smd schottky diode s6
1PS76SB62
13845
1PS66SB62
SC-76
diode smd marking code 76
smd schottky diode marking s6
philips package information
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Si1907DL
Abstract: Si1907DL-T1
Text: Si1907DL Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.650 at VGS = - 4.5 V ± 0.56 0.925 at VGS = - 2.5 V ± 0.47 1.310 at VGS = - 1.8 V ± 0.39 • TrenchFET Power MOSFETS: 1.8 V Rated Pb-free
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Si1907DL
OT-363
SC-70
Si1907DL-T1
Si1907DL-T1-E3
18-Jul-08
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FP6736
Abstract: FP6736S5P marking code C4 Sot 23-5 sot-23-5 marking cy sot-23-5 5R STEP UP DC DC SOT-23-6 FP6736S6 sot-23-6 marking MOSFET P SOT-23-6 marking E1 sot236
Text: FP6736 85T Current-Mode fitipower integrated technology lnc. 1.4MHz SOT23 Step-Up DC/DC Converter Description Features The FP6736 is a current-mode, pulse-width modulation and step-up DC/DC converter. The built-in high voltage N-channel MOSFET allows FP6736 for step-up applications with up to 30V
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FP6736
OT-23-5,
OT-23-6,
TSOT-23-6
MO-178-C.
FP6736-1
FP6736S5P
marking code C4 Sot 23-5
sot-23-5 marking cy
sot-23-5 5R
STEP UP DC DC SOT-23-6
FP6736S6
sot-23-6 marking
MOSFET P SOT-23-6
marking E1 sot236
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Si1303DL
Abstract: No abstract text available
Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free
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Si1303DL
OT-323
SC-70
Si1303DL-T1
Si1303DL-T1-E3
18-Jul-08
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PDF
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SOT-363 marking CF
Abstract: si1988 SI1988DH 62109 74296
Text: Si1988DH Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.168 at VGS = 4.5 V 1.3a 0.200 at VGS = 2.5 V 1.3a 0.250 at VGS = 1.8 V a 1.3 Qg (Typ) • TrenchFET Power MOSFET APPLICATIONS
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Si1988DH
OT-363
SC-70
Si1988DH-T1-E3
18-Jul-08
SOT-363 marking CF
si1988
62109
74296
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PDF
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S6046
Abstract: No abstract text available
Text: Si3446ADV Vishay Siliconix New Product N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES rDS(on) (Ω) ID (A)a 0.037 at VGS = 4.5 V 6 0.065 at VGS = 2.5V 6 Qg (Typ) • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Si3446ADV
18-Jul-08
S6046
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"marking code D2"
Abstract: 74343 Si1970DH Si1970DH-T1-E3
Text: Si1970DH Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.225 at VGS = 4.5 V 1.3a 0.345 at VGS = 2.5 V 1.3a • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 1.15 nC SOT-363 SC-70 (6-LEADS)
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Si1970DH
OT-363
SC-70
Si1970DH-T1-E3
18-Jul-08
"marking code D2"
74343
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PDF
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74275
Abstract: Si1450DH S6207
Text: Si1450DH Vishay Siliconix New Product N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 rDS(on) (Ω) ID (A)a 0.047 at VGS = 4.5 V 4.0a 0.051 at VGS = 2.5 V 4.0a 0.058 at VGS = 1.8 V 4.0 a 4.0 a 0.069 at VGS = 1.5 V • TrenchFET Power MOSFET: 1.5 V Rated
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Si1450DH
OT-363
SC-70
Si1450lectual
18-Jul-08
74275
S6207
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Si1470DH
Abstract: Si1470DH-T1-E3 Si1470
Text: Si1470DH Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.066 at VGS = 4.5 V 4.0a 0.095 at VGS = 2.5 V 4.0 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 4.85 RoHS APPLICATIONS
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Si1470DH
OT-363
SC-70
Si1470DH-T1-E3
18-Jul-08
Si1470
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Si3437DV
Abstract: SI3437 SI3437DV-T1-E3 S-62238
Text: Si3437DV Vishay Siliconix New Product P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 rDS(on) (Ω) ID (A)a 0.75 at VGS = - 10 V - 1.4 0.79 at VGS = - 6 V - 1.3 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS 8 nC
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Si3437DV
Si3437DV-T1-E3
18-Jul-08
SI3437
S-62238
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74398
Abstract: Si1972DH Si1972DH-T1-E3 061c "MARKING CODE G2"
Text: Si1972DH Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 Qg (Typ) • TrenchFET Power MOSFET APPLICATIONS 0.91 nC SOT-363 SC-70 (6-LEADS)
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Si1972DH
OT-363
SC-70
Si1972DH-T1-E3
18-Jul-08
74398
061c
"MARKING CODE G2"
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PDF
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Si1407DL
Abstract: Si1407DL-T1 Si1407DL-T1-E3
Text: Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V - 1.8 0.170 at VGS = - 2.5 V - 1.5 0.225 at VGS = - 1.8 V - 1.3 • TrenchFET Power MOSFETs • 1.8 V Rated Pb-free Available
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Si1407DL
OT-363
SC-70
Si1407DL-T1
Si1407DL-T1-E3
18-Jul-08
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PDF
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74249
Abstract: P-Channel 200V MOSFET TSOP6 Si3475DV
Text: Si3475DV Vishay Siliconix New Product P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 rDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 8 nC RoHS
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Si3475DV
Si3475DV-T1-E3
18-Jul-08
74249
P-Channel 200V MOSFET TSOP6
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PDF
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GP2Y1010AU0F
Abstract: SCHEMATIC Air Purifier Schematic GP2Y10 Air Purifier Schematic dust sensor GP2Y1010AU GP2Y1010F smoke alarm project smoke detector schematic schematic sharp rohs marking
Text: GP2Y1010AU0F GP2Y1010AU0F • Description GP2Y1010AU0F is a dust sensor by optical sensing system. An infrared emitting diode IRED and an phototransistor are diagonally arranged into this device. It detects the reflected light of dust in air. Especially, it is effective to detect very fine particle
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GP2Y1010AU0F
GP2Y1010AU0F
2002/95/EC)
E4-A01501EN
SCHEMATIC Air Purifier Schematic
GP2Y10
Air Purifier Schematic
dust sensor
GP2Y1010AU
GP2Y1010F
smoke alarm project
smoke detector schematic schematic
sharp rohs marking
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PDF
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Si5483DU-T1-E3
Abstract: si5483
Text: Si5483DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.043 at VGS = - 2.5 V - 12a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area
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Si5483DU
18-Jul-08
Si5483DU-T1-E3
si5483
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PDF
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SS6P4C
Abstract: S64c J-STD-002 "Schottky Diode" SMPC
Text: New Product SS6P4C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement • Low forward voltage drop, low power
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Original
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J-STD-020
O-277A
22-A111
2002/95/EC
2002/96/EC
18-Jul-08
SS6P4C
S64c
J-STD-002
"Schottky Diode" SMPC
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PDF
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SS6P4C
Abstract: No abstract text available
Text: New Product SS6P4C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement • Low forward voltage drop, low power
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J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
O-277A
94any
18-Jul-08
SS6P4C
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PDF
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ZTF 160
Abstract: s60sc4mt
Text: Schottky Barrier Diode Twin Diode U$mm S60SC4MT OUTLINE U n it i m m Package : MTO-3PT 40V 60A Feature Tj=150°C Tj=150°C 0 j C Ä t y ] i£ U Small 6 \c High lo Rating Main Use • • • • • DC/DC nyjï— 2 • m m . 'f - u . o m m Switching Regulator
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OCR Scan
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S60SC4MT
J533-1
ZTF 160
s60sc4mt
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PDF
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