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    DMP210DUFB4 Price and Stock

    Diodes Incorporated DMP210DUFB4-7

    MOSFET P-CH 20V 200MA 3DFN
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    DigiKey DMP210DUFB4-7 Digi-Reel 36,094 1
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    DMP210DUFB4-7 Cut Tape 36,094 1
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    DMP210DUFB4-7 Reel 33,000 3,000
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    Diodes Incorporated DMP210DUFB4-7B

    MOSFET P-CH 20V 200MA 3DFN
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    DigiKey DMP210DUFB4-7B Reel 10,000
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    DMP210DUFB4 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DMP210DUFB4 Diodes P-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMP210DUFB4-7 Diodes Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 0.2A X2-DFN1006 Original PDF
    DMP210DUFB4-7B Diodes Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 0.2A X2-DFN1006 Original PDF

    DMP210DUFB4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) -20V 5 @ VGS = -4.5V 7 @ VGS = -2.5V 10 @ VGS = -1.8V 15 @ VGS = -1.5V ID TA = +25°C -200mA -170mA -140mA -50mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original     		DMP210DUFB4 -200mA -170mA -140mA -50mA AEC-Q101 DS35026 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) -20V 5Ω @ VGS = -4.5V 7Ω @ VGS = -2.5V 10Ω @ VGS = -1.8V 15Ω @ VGS = -1.5V ID TA = +25°C -200mA -170mA -140mA -50mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original     		DMP210DUFB4 -200mA -170mA -140mA -50mA DS35026 PDF

    DN1G

    Abstract: No abstract text available
    Text: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max


    Original     		DMP210DUFB4 -200mA -140mA AEC-Q101 DS35026 DN1G PDF

    DMP210DUFB4

    Abstract: No abstract text available
    Text: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(on) • • ID P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max


    Original     		DMP210DUFB4 -200mA -140mA AEC-Q101 DS35026 DMP210DUFB4 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • ID RDS(on) P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max


    Original     		DMP210DUFB4 -200mA -140mA AEC-Q101 DS35026 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • • ID RDS(on) P-Channel MOSFET Low On-Resistance • 5.5Ω @ -4.5V • 7.5Ω @ -2.5V • 11.5Ω @ -1.8V • 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH), 1.15V max


    Original     		DMP210DUFB4 AEC-Q101 -200mA -140mA DS35026 PDF

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N PDF

    DMN26D0UFB4-7B

    Abstract: SDPB1K10NB-7 DDTC115TUA LMN200B01 DMN5L06TK DMP2012SN DMN5L06DMK MMDT3946LP4 DDTB123EU DDTD114GC
    Text: DATE: 7th April, 2011 PCN #: 2020 PCN Title: Qualification of Additional Wafer Fabrication Sources Dear Customer: This is an announcement of change s to products that are currently being


    Original     		DMN2005K-7 DMN3115UDM-7 DMN5L06TK-7 DMP2104LP-7-G BSS8402DW-7-G DMN2005LP4K-7 DMN3200U-7 DMN5L06VAK-7 DMP2104V-7 BSS84DW-7-F DMN26D0UFB4-7B SDPB1K10NB-7 DDTC115TUA LMN200B01 DMN5L06TK DMP2012SN DMN5L06DMK MMDT3946LP4 DDTB123EU DDTD114GC PDF

    complementary MOSFET TO252

    Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
    Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and


    Original     		D-81541 A1103-04, complementary MOSFET TO252 zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4 PDF

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 PDF