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    DMOSFET P CHANNEL Search Results

    DMOSFET P CHANNEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    DMOSFET P CHANNEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SO T8 9 BSS192 240 V, P-channel vertical D-MOS transistor 12 December 2014 Product data sheet 1. General description P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device


    Original     		PDF BSS192 SC-62)

    DMOSFET

    Abstract: ZCP0545A
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCP0545A ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . MAX. This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. PARAMETER SYMBOL MIN. UNIT CONDITIONS.


    Original     		PDF ZCP0545A DMOSFET ZCP0545A

    CPMF-1200-S160B

    Abstract: DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


    Original     		PDF CPMF-1200-S160B CPMF-1200-S160B DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D

    CPMF-1200-S080B

    Abstract: DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


    Original     		PDF CPMF-1200-S080B CPMF-1200-S080B DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die

    westinghouse transistors

    Abstract: No abstract text available
    Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,


    Original     		PDF 10-kV westinghouse transistors

    DMOSFET

    Abstract: ZCN0545A
    Text: ZCN0545A N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCN0545A ISSUE 2 – MAY 94 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Forward Drain-Source Breakdown Voltage BVDSS 450 TYP. MAX. UNIT CONDITIONS. V VGS=0V Reverse Drain-Source


    Original     		PDF ZCN0545A 500mA, 250mA, DMOSFET ZCN0545A

    Trench MOSFET Termination Structure

    Abstract: Diodes ed26 PN channel MOSFET 10A Design Seminar electric field International Power Sources International Semiconductor Technologies etal p407 vishay ED26 Designing with Field Effect Transistors
    Text: Presented at the 7th International Seminar on Power Semiconductors, ISPS’06, Prague, Czech Republic, 2006. Low-Voltage, Super-Junction Technology Deva N. Pattanayak, Yuming Bai, and King Owyang Vishay Siliconix 2201 Laurelwood Road, Santa Clara, CA 95054, USA


    Original     		PDF

    SA56203tw

    Abstract: stepper motor philips ID 27 stepper motor philips ID 35 stepper motor philips ID 31 SA56203 AN01026 SMD Hall sensors linear D K2930 hall sensor smd 80 L
    Text: SA56203 One-chip motor driver Rev. 02 — 10 December 2004 Preliminary data sheet 1. General description The SA56203 is a one-chip motor driver IC that is capable of driving all motors of CD or DVD systems e.g. spindle, sled and loading motors and actuators on the optical pick-up


    Original     		PDF SA56203 SA56203 SA56203tw stepper motor philips ID 27 stepper motor philips ID 35 stepper motor philips ID 31 AN01026 SMD Hall sensors linear D K2930 hall sensor smd 80 L

    stepper motor philips ID 31

    Abstract: stepper motor philips ID 27 Philips stepper motor id 35 philips OPTICAL PICK-UP stepper motor philips ID 35 "one-chip motor driver" CD motor driver stepper motor philips ID analog hall smd 4 pin General Purpose Motor Driver dc
    Text: SA56203S One-chip motor driver Rev. 01 — 31 January 2005 Preliminary data sheet 1. General description The SA56203S is a one-chip motor driver IC that is capable of driving all motors of CD or DVD systems e.g. spindle, sled and loading motors and actuators on the optical pick-up


    Original     		PDF SA56203S SA56203S stepper motor philips ID 31 stepper motor philips ID 27 Philips stepper motor id 35 philips OPTICAL PICK-UP stepper motor philips ID 35 "one-chip motor driver" CD motor driver stepper motor philips ID analog hall smd 4 pin General Purpose Motor Driver dc

    IXTA02N100D2

    Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
    Text: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .


    Original     		PDF AN-D16, IXTA02N100D2 depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2

    Untitled

    Abstract: No abstract text available
    Text: artville Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices Ranbir Singh and Michael Pecht 1932-4529/08/$25.00©2008 IEEE E volutionary improvements in silicon Si power devices through better device designs, processing techniques, and material quality have


    Original     		PDF r1996, XVI-14.

    all mosfet equivalent book

    Abstract: P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion
    Text: November 2,1999 AN9010 MOSFET Basics April 1999 R & D 2 Group Fairchild Korea Semiconductor CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 2


    Original     		PDF AN9010 all mosfet equivalent book P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion

    Untitled

    Abstract: No abstract text available
    Text: Microelectronics Reliability 46 2006 713–730 www.elsevier.com/locate/microrel Introductory Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh * GeneSiC Semiconductor Inc., 42652 Jolly Lane, South Riding, VA 20152, United States


    Original     		PDF

    BD16925EFV-M

    Abstract: rain sensor ML512010 ML511003 "rain sensor" BD81A ML9636GDZB5A BD16805FV-M bd3021 ML86V76653
    Text: A G 2011 1st Automotive Body General Purpose ICs Video and Imaging ICs Audio ICs IT Equipment ICs Consumer Product ICs Automotive ICs Discrete Semiconductors Optoelectronics Modules APPLICATION GUIDE Site Search www.rohm.com AG03 Enter the code above for additional details


    Original     		PDF 53A6386E BD16925EFV-M rain sensor ML512010 ML511003 "rain sensor" BD81A ML9636GDZB5A BD16805FV-M bd3021 ML86V76653

    all mosfet equivalent book

    Abstract: free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion
    Text: July, 2000 AN9010 MOSFET Basics By K.S.Oh CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 3


    Original     		PDF AN9010 all mosfet equivalent book free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion

    class d amplifier schematic hip4080

    Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
    Text: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		PDF AN9539 HIP2060, HIP2060 1-800-4-HARRIS class d amplifier schematic hip4080 hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S mosfet L 3055 high power fet audio amplifier schematic

    HIP4080 amplifier circuit diagram class D

    Abstract: class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A
    Text: No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		PDF AN9539 HIP2060, HIP2060 HIP4080 amplifier circuit diagram class D class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A

    class d amplifier schematic hip4080

    Abstract: HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V HIP2060 MO-169AB
    Text: TM No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		PDF AN9539 HIP2060, HIP2060 class d amplifier schematic hip4080 HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V MO-169AB

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ISSUE 2 - M A Y 94 _ This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. FE A TU R E S * E x tre m e ly lo w on state v o lta g e * N o ne ed to d e ra te fo r h ig h e r te m p e ra tu re s


    OCR Scan     		PDF 001G35S

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 00E5bEE SEM « A P X Philips Semiconductors BSS131 Data sheet status P r e lim in a r y s p e c ific a tio n date of issue A p r il 1 9 9 1 N-channel enhancement mode vertical D-MOS FET N AUER PHILIPS/DISCRETE DESCRIPTION QUICK REFERENCE DATA Silicon n-channel enhancement


    OCR Scan     		PDF bbS3T31 00E5bEE BSS131

    MAX638

    Abstract: 2n3906a MAX635 multiplexer 12v dc INTERFACE BOX R13C13
    Text: DESIGN SHOWCASE Single Coax Carries Video, Power, and Channel-Select Signals In the video system of Figure 1, a single coaxial cable carries power to the remote location, selects one o f eight video channels, and returns the selected signal. The system can choose one of


    OCR Scan     		PDF

    TDA7052 application note

    Abstract: 211S Philips Semiconductors Selection Guide Philips Semiconductors Power Diodes Selection Guide TDA7050 PZT2369 8048 microcontroller APPLICATION OM6202 BSS89 APPLICATION PDTA114EE
    Text: Objective specification Philips Semiconductors Listening-in and handsfree ICs IC03 OVERVIEW OF LISTENING-IN ICs Supply voltage V Details Type Current Speech Line consumpt. powered part (mA) PD<1> TDA7050 loudspeaker amplifier 1.6 to 6.0 no no 3.2 no TDA7052


    OCR Scan     		PDF TDA7050 TDA7052 TEA1083 TEA1083A TEA1083 TEA1085 TEA1085A TEA1097 TDA7052 application note 211S Philips Semiconductors Selection Guide Philips Semiconductors Power Diodes Selection Guide PZT2369 8048 microcontroller APPLICATION OM6202 BSS89 APPLICATION PDTA114EE

    Untitled

    Abstract: No abstract text available
    Text: 19-1214: Rev 0; 7/97 m > k l> J X I > k l -s sS f D igitally Adjustable LCD Bias Supplies Features ♦ 1.8V to 20V Battery Input Voltage Output voltage can be set to a desired positive or nega­ tive voltage range with external resistors, and adjusted over that range with the on-board digital-to-analog con­


    OCR Scan     		PDF MAX1620/ MAXI620 MAX1621

    BD9886FV

    Abstract: BD9886 INVERTER bd9886fv bd9884fv b0350 TEPSL PMP25 bd-9b MCR03 ER b0352
    Text: 2008 SPRING Energy saving ! ECO Devices E x c e lle n c e in E le c tro n ic s ROHM ECO Devices Using ROHM ECO Devices saves energy and reduces CO2 generation. At ROHM we are committed to saving energy by reducing the power consumption of equipment. This starts at the component level - the basic building blocks of all circuits. ROHM, the leading


    OCR Scan     		PDF 50N5880E BD9886FV BD9886 INVERTER bd9886fv bd9884fv b0350 TEPSL PMP25 bd-9b MCR03 ER b0352