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    DK 51* TRANSISTOR Search Results

    DK 51* TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    DK 51* TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0200

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0300 Rev.3.00 Oct 01, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0300

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0300 Rev.3.00 Oct 01, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0300

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0200

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288118 288M-BIT PD48288118

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288118 288M-BIT PD48288118

    BA2rc

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288118 288M-BIT PD48288118 BA2rc

    p144f

    Abstract: TDK EF25 BAP36 PD482
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118-A 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288118-A 288M-BIT PD48288118-A M8E0904E p144f TDK EF25 BAP36 PD482

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288118-A 288M-BIT Low Latency DRAM Separate I/O R10DS0157EJ0100 Rev.1.00 Feb 01, 2013 Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288118-A 288M-BIT R10DS0157EJ0100 PD48288118-A

    tp2350

    Abstract: J200 mosfet DK 51* transistor IRF950 TRIPATH TC2001 250w audio amplifier circuit diagram capacitor 4.7uF 100v crossover passive TRIPATH pin connection of j200 transistor TK2350
    Text: Tr i path Technol ogy, I nc. - Technical Information RB-TK2350-1 RB-TK2350-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 1.5 June 2002 GENERAL DESCRIPTION The RB-TK2350 reference board is based on the TK2350 digital audio power amplifier


    Original     		PDF RB-TK2350-1 RB-TK2350-2 RB-TK2350 TK2350 RB-TK2350, RB-TK2350-1 /-21V /-39V tp2350 J200 mosfet DK 51* transistor IRF950 TRIPATH TC2001 250w audio amplifier circuit diagram capacitor 4.7uF 100v crossover passive TRIPATH pin connection of j200 transistor

    TP2350B

    Abstract: J200 mosfet tp2350 TRIPATH TC2001 TK2350 2 speakers 1 crossover amplifier pcb RB-TK2350-2 MURS120T Tripath Amplifier Tripath Technology
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TK2350-1 RB-TK2350-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 2.2 November 2004 GENERAL DESCRIPTION The RB-TK2350 reference board is based on the TK2350 digital audio power amplifier chipset from


    Original     		PDF RB-TK2350-1 RB-TK2350-2 RB-TK2350 TK2350 RB-TK2350-1 /-21V /-39V /-35V TP2350B J200 mosfet tp2350 TRIPATH TC2001 2 speakers 1 crossover amplifier pcb RB-TK2350-2 MURS120T Tripath Amplifier Tripath Technology

    PD48576109,

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0100 Rev.1.00 September 27, 2011 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0100 PD48576109,

    thermistor 100k

    Abstract: 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
    Text: Design Application Note AN-090 2 x SLD-1026Z LDMOS Application Circuits Abstract Bias Discussion Sirenza Microdevices' SLD-1026Z is a high performance LDMOS transistor designed for operation up to 2.7 GHz. This application note demonstrates balanced configuration application circuits operating in the 800,


    Original     		PDF AN-090 SLD-1026Z EAN-105860 thermistor 100k 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet PD48288109A μPD48288118A R10DS0098EJ0001 Rev.0.01 August 2, 2011 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288109A PD48288118A R10DS0098EJ0001 288M-BIT PD48288109A 432-word PD48288118A 216-word

    BA1 K11

    Abstract: ba1d1a PD48576118FF-E24-DW1-A
    Text: Preliminary Datasheet PD48576109-A μPD48576118-A R10DS0064EJ0001 Rev.0.01 Nov 08, 2010 576M- Low Latency DRAM Separate I/O Description The μPD48576109-A is a 67,108,864-word by 9 bit and the μPD48576118-A is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48576109-A PD48576118-A R10DS0064EJ0001 PD48576109-A 864-word PD48576118-A BA1 K11 ba1d1a PD48576118FF-E24-DW1-A

    ks 213 b

    Abstract: AMD fm2 Pin Package IC818 LCD 1620 uPD1723 LCD KS 108 PD1723GF-013 LCD 1620 datasheet LCD display 1602 car radio 14x20
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD1723GF-013, µPD1723GF-213 PLL FREQUENCY SYNTHESIZER AND CONTROLLER FOR FM/MW/LF TUNER CAR AUDIO The µPD1723GF-013 and µPD1723GF-213 are CMOS LSI developed for worldwide PLL frequency synthesizer FM/MW/LW tuner use.


    Original     		PDF PD1723GF-013, PD1723GF-213 PD1723GF-013 PD1723GF-213 64-pin ks 213 b AMD fm2 Pin Package IC818 LCD 1620 uPD1723 LCD KS 108 LCD 1620 datasheet LCD display 1602 car radio 14x20

    capacitor 100 microfarad 50v

    Abstract: PA78EU pa78 design
    Text: PA78 PA78 P r o d u c t IInnnnoovvaa t i o n FFr roomm Power Operational Amplifier FEATURES DESCRIPTION The PA78 is a high voltage, high speed, low idle current op-amp capable of delivering up to 200mA peak output current. Due to the dynamic biasing of the input


    Original     		PDF 150mA 200mA PA78U capacitor 100 microfarad 50v PA78EU pa78 design

    LCD12

    Abstract: Car FM tuner car radio 14x20 NEC car radio 4.5-Mhz PD1723GF-013 LCD15 Tuner UPD1723GF 10.7 MHZ
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    LZ9FC22

    Abstract: schematic diagram tv sharp ADS7486 S1L50282F23K100 sharp lcd panel pinout transistor D400 SERVICE MANUAL tv sharp sharp lcd service manual NL2432DR22-11B tv schematic diagram SHARP power supply
    Text: Application Report SPRA968 - November 2003 Connecting TFT LCD Displays to the OMAP5910 Gerald Coley DSPIEEE Catalog OMAP Applications ABSTRACT The OMAP5910 contains an integrated LCD controller. Utilizing internal memory and dedicated DMA channels, this architecture contains a very efficient LCD control interface.


    Original     		PDF SPRA968 OMAP5910 OMAP5910 OMAP5910. LZ9FC22 schematic diagram tv sharp ADS7486 S1L50282F23K100 sharp lcd panel pinout transistor D400 SERVICE MANUAL tv sharp sharp lcd service manual NL2432DR22-11B tv schematic diagram SHARP power supply

    SWITCH 255SB

    Abstract: MA05-2 pin header nanoLOC TRX Transceiver user guide nanoLOC nanoLOC Development d-sub F09HP all stk ic diagram crystal 7.3728MHz zigbee based mini projects tsl2561t
    Text: nanoLOC Development Kit User Guide Version 1.03 NA-06-0230-0402-1.03 Document Information nanoLOC Development Kit User Guide Document Information Document Title: nanoLOC Development Kit User Guide Document Version: 1.03 Published yyyy-mm-dd : 2007-02-27 Current Printing:


    Original     		PDF NA-06-0230-0402-1 SWITCH 255SB MA05-2 pin header nanoLOC TRX Transceiver user guide nanoLOC nanoLOC Development d-sub F09HP all stk ic diagram crystal 7.3728MHz zigbee based mini projects tsl2561t

    "Signal Line Filter"

    Abstract: electrical based microcontroller projects 78M05 sot223 EMC for PCB Layout MC908AP64 1n4733 smd MC68HC9S08AW60 AN2764 Signal Line Filters a1972
    Text: Freescale Semiconductor Application Note AN2764 Rev. 0, 06/2005 Improving the Transient Immunity Performance of Microcontroller-Based Applications by: Ross Carlton, Greg Racino, John Suchyta Freescale Semiconductor, Inc. Introduction Increased competition among appliance manufacturers, as well as market regulatory pressures, are


    Original     		PDF AN2764 "Signal Line Filter" electrical based microcontroller projects 78M05 sot223 EMC for PCB Layout MC908AP64 1n4733 smd MC68HC9S08AW60 AN2764 Signal Line Filters a1972

    Untitled

    Abstract: No abstract text available
    Text: PA78 PA78 P r oPA78 d uu cc tt TI en cnhonv oa ltoi go yn FF rr oo m m Power Operational Amplifier FEATURES DESCRIPTION The PA78 is a high voltage, high speed, low idle current op-amp capable of delivering up to 200mA peak output current. Due to the dynamic biasing of the input


    Original     		PDF oPA78 150mA 200mA PA78U

    NEC car radio 4.5-Mhz

    Abstract: LCO17 SP MZ8 transistor dk 50 NEC PD6121 diodo 72 DIODO LED Hoshiden LED display for radio pd7225
    Text: P R E L IM IN A R Y D A TA S H E E T M O S IN T E G R A T E D C IR C U IT uPD17012GF-011 PLL Frequency Synthesizer and Controller for Car Audio FM, MW, and LW Tuners The/iPD17012GF-011 isa CMOS LSI that was developed for FM, M W ,and LW tu n ers em ploying the world­


    OCR Scan     		PDF PD17012GF-011 NEC car radio 4.5-Mhz LCO17 SP MZ8 transistor dk 50 NEC PD6121 diodo 72 DIODO LED Hoshiden LED display for radio pd7225

    VARTA 100 RST

    Abstract: mempac VARTA 170 dk VARTA 100 DKO Battery VARTA 60 DKO Battery VARTA 500 RST VARTA 250 dk 530107 VARTA 60 dk VARTA L2 400
    Text: Memory Protection 4-0 110 e Sealed Ni-Cd- and Lithium-Batteries for Table of contents Page General, application guide, main application areas 3 1. Product range 4 2. Ni-Cd-batteries for memory protection 2.1 Application data 2.2 Discharge 2.3 Temperature range


    OCR Scan     		PDF 102/Japan D-3000 VARTA 100 RST mempac VARTA 170 dk VARTA 100 DKO Battery VARTA 60 DKO Battery VARTA 500 RST VARTA 250 dk 530107 VARTA 60 dk VARTA L2 400