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    DIODES V1J Search Results

    DIODES V1J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODES V1J Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    circuit diagram for dc-dc boost converter for 24v to 230v

    Abstract: ic voltage Regulator L200
    Text: <|H^ \zm cin VI-HAM Unity Power Factor Harmonic Attenuator Module Conventional capacitive-input front ends draw energy from the A C line in short bursts of current at the peaks of the line voltage waveform. These current bursts are characterized by high peak currents and high harmonic


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    V1J diode

    Abstract: DIODE V1J marking code Diodes v1j MARKING CODE V1J V1j marking code V1J SMA DIODE V1J 95029 MARKING SMA V1J diode Diode marking code v1j
    Text: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA • Lead Pb -free (“PbF” suffix)


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    10MQ100NPbF 10MQ100NPbF 18-Jul-08 V1J diode DIODE V1J marking code Diodes v1j MARKING CODE V1J V1j marking code V1J SMA DIODE V1J 95029 MARKING SMA V1J diode Diode marking code v1j PDF

    V1J diode

    Abstract: DIODE V1J marking code DIODE V1J V1j marking code MARKING CODE V1J Diodes v1j Diode marking code v1j SMA V1J 94119
    Text: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA • Compliant to RoHS directive 2002/95/EC


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    10MQ100NPbF 2002/95/EC 10MQ100NPbF 18-Jul-08 V1J diode DIODE V1J marking code DIODE V1J V1j marking code MARKING CODE V1J Diodes v1j Diode marking code v1j SMA V1J 94119 PDF

    V1J diode

    Abstract: DIODE V1J MARKING V1J V1j marking code DIODE V1J marking code 10MQ100NPBF v1J Datasheet 95029 10MQ100 95029 MARKING
    Text: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable Available • Low forward voltage drop RoHS* • High frequency operation Cathode Anode COMPLIANT • Guard ring for enhanced ruggedness and long term


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    10MQ100NPbF 10MQ100NPbF 18-Jul-08 V1J diode DIODE V1J MARKING V1J V1j marking code DIODE V1J marking code v1J Datasheet 95029 10MQ100 95029 MARKING PDF

    V1J diode

    Abstract: DIODE V1J marking code DIODE V1J Diode marking code v1j V1J DO-214AA Diodes v1j 95029 MARKING V1j marking code MARKING CODE V1J v1j RECTIFIER
    Text: 10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMB • Compliant to RoHS directive 2002/95/EC


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    10BQ100PbF 2002/95/EC 10BQ100PbF 18-Jul-08 V1J diode DIODE V1J marking code DIODE V1J Diode marking code v1j V1J DO-214AA Diodes v1j 95029 MARKING V1j marking code MARKING CODE V1J v1j RECTIFIER PDF

    V1J diode

    Abstract: DIODE V1J 10bq100pbf DO-214AA, SMB v1J Datasheet V1j marking code DIODE V1J marking code
    Text: 10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable Available • Low forward voltage drop RoHS* • High frequency operation Cathode Anode COMPLIANT • Guard ring for enhanced ruggedness and long term


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    10BQ100PbF 10BQ100PbF 18-Jul-08 V1J diode DIODE V1J DO-214AA, SMB v1J Datasheet V1j marking code DIODE V1J marking code PDF

    V1J diode

    Abstract: V1j marking code DIODE V1J marking code VS-10MQ100NPBF Diodes v1j vs10mq100npbf DIODE V1J Diode marking code v1j V1J SMA VS-10MQ100N
    Text: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    VS-10MQ100NPbF J-STD-020, 2002/95/EC VS-10MQ100NPbF 18-Jul-08 V1J diode V1j marking code DIODE V1J marking code Diodes v1j vs10mq100npbf DIODE V1J Diode marking code v1j V1J SMA VS-10MQ100N PDF

    transistor SMD FLO 14

    Abstract: P1-12H
    Text: Dual Channel Line Receiver Hermetic Optocoupler Technical Data HCPL-1930 HCPL-1931 HCPL-193K 5962-89572 F eatu res • D ual M arked w ith D evice Part N um ber and DSCC Standard M icrocircuit D raw ing • M anufactured and T este d on a M IL-PRF-38534 C ertified


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    HCPL-1930 HCPL-1931 HCPL-193K IL-PRF-38534 L-38534, 16-pin MIL-PRF-38534 MIL-PRF-38534. 5965-1143E 5967-5809E transistor SMD FLO 14 P1-12H PDF

    DIODE V1J marking code

    Abstract: V1J diode 10bq100pbf V1j marking code Diode marking code v1j VS-10BQ100
    Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    VS-10BQ100PbF J-STD-020, 2002/95/EC VS-10BQ100PbF 18-Jul-08 DIODE V1J marking code V1J diode 10bq100pbf V1j marking code Diode marking code v1j VS-10BQ100 PDF

    diode SMA marking code PB

    Abstract: V1J diode 94119
    Text: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    VS-10MQ100NPbF J-STD-020, 2002/95/EC VS-10MQ100NPbF 11-Mar-11 diode SMA marking code PB V1J diode 94119 PDF

    V1J diode

    Abstract: DIODE V1J marking code V1J DO-214AA
    Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    VS-10BQ100PbF J-STD-020, 2002/95/EC VS-10BQ100PbF 11-Mar-11 V1J diode DIODE V1J marking code V1J DO-214AA PDF

    V1j marking code

    Abstract: V1J diode
    Text: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    VS-10MQ100NPbF J-STD-020, 2002/95/EC VS-10MQ100NPbF 11-Mar-11 V1j marking code V1J diode PDF

    DIODE V1J marking code

    Abstract: Diodes v1j DIODE V1J V1J diode V1J DO-214AA
    Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    VS-10BQ100PbF J-STD-020, 2002/95/EC VS-10BQ100PbF 11-Mar-11 DIODE V1J marking code Diodes v1j DIODE V1J V1J diode V1J DO-214AA PDF

    vs-10bq100

    Abstract: DIODE V1J marking code V1j marking code V1J diode 95034 vs10bq100
    Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    VS-10BQ100PbF J-STD-020, 2002/95/EC VS-10BQ100PbF 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 vs-10bq100 DIODE V1J marking code V1j marking code V1J diode 95034 vs10bq100 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    VS-10MQ100NPbF J-STD-020, 2002/95/EC VS-10MQ100NPbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    V1J diode

    Abstract: No abstract text available
    Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    VS-10BQ100PbF J-STD-020, 2002/95/EC VS-10BQ100PbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 V1J diode PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-10MQ100NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode • High frequency operation Anode • Guard ring for enhanced ruggedness and long term


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    VS-10MQ100NPbF J-STD-020, VS-10MQ100NPbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    94119

    Abstract: No abstract text available
    Text: VS-10MQ100NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA


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    VS-10MQ100NPbF J-STD-020, VS-10MQ100NPbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 94119 PDF

    10BQ100PbF

    Abstract: No abstract text available
    Text: VS-10BQ100PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode Anode • High frequency operation • Guard ring for enhanced ruggedness and long term


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    VS-10BQ100PbF J-STD-020, VS-10BQ100PbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 10BQ100PbF PDF

    AD363-ADC

    Abstract: AD344-ADC ad343 AD364RTD
    Text: ANALOG DEVICES Complete 16-Channel, 12-Bit Data Acquisition Systems AD363/AD364 FEATURES FUNCTIONAL BLOCK DIAGRAMS AD363 16-Channa< Data Acquisition input Stag« with: WgftaWy ControUad Ctunnai Satactkxi/Moda Control 16 Shtgla-Endad or I Differential Channels


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    AD363 16-Channa< 16-Ctwnnal AD364 16-channel AD363/AD364 DH-32C DH-32E M14WM) AD363-ADC AD344-ADC ad343 AD364RTD PDF

    54123 application as pulse generator

    Abstract: SVI 3003 FLJ445 ANB I AD smd transistor marking 12G 31114 J006 LR 3441 multi vibrator circuit SMD TRANSISTOR MARKING 9b
    Text: MIL-M-38510/12G MIL-M-38510/12F 4 A p r i 1 1980 •1 MILITARY SPEC IFIC ATIO N MIC ROCIRCUITS, D IG IT A L , BIPOLA R, TTL , MONOSTABLE MULTIVIBRATORS, MONOLITHIC SIL1C01J T h i s s p e c i f i c a t i o n is ments and A g e n c ie s 1. approved f o r use by a l l D e p a r t ­


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    MIL-M-38510/12G MIL-M-38510/12F 10N0STABLE MIL-M-38510. 385io. MIL-M-38510 54123 application as pulse generator SVI 3003 FLJ445 ANB I AD smd transistor marking 12G 31114 J006 LR 3441 multi vibrator circuit SMD TRANSISTOR MARKING 9b PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    RTXP24

    Abstract: RELZ100 ABB STT 111 distance relay RTXP 18 depth earth BUSBAR calculation power line carrier communication abb calculation diSTANCE relay REL 300 10VA BUSBAR calculation
    Text: Type RE L 100/RELZ 100 ~ ., .~ 1MPBO600~EN ~ page March 992 Chan since August 1990 Data s bject to change wilhoul nolice Line protection ABB Network Controi & Protection 90642 Features Application -Simultaneous phase and earth distance measurement with individual numerical


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    100/RELZ 1MPBO600 1MDUO6004-EN 1MDUO6012-EN 100/REOR MDB10004-EN 1MDB10006-EN MDBO6004-EN RTXP24 RELZ100 ABB STT 111 distance relay RTXP 18 depth earth BUSBAR calculation power line carrier communication abb calculation diSTANCE relay REL 300 10VA BUSBAR calculation PDF