408nm
Abstract: HFDN-28 MAX3701 MAX3701CTJ MO220 32L-QFN HFAN02
Text: 19-3008; Rev 0; 10/03 2x _ MAX3701 DVD ♦ MAX3701 _ / ♦ 0.9ns RF ♦ MAX3701 RF Hz 1nA/√H ♦ 200mA ♦ ♦ / (OPC) ♦ 200mA 200mAP-P 400Mbps MAX3701 CMOS RF 5 5mm2 32 200MHz ♦ 600MHz
|
Original
|
PDF
|
MAX3701
200mA
200mAP-P
400Mbps
200MHz
600MHz
408nm
HFDN-28
MAX3701
MAX3701CTJ
MO220
32L-QFN
HFAN02
|
RM2- Diode
Abstract: RM2-12V RM2-24V EX 571 RM2-L-12V RM2-L2-12V RM2-L2-24V RM2-L-24V HP4328A RM2-9V
Text: RM HIGH FREQUENCY SIGNAL 4 GHz SWITCHABLE 28 1.102 RM-RELAYS • Excellent high frequency characteristics Isolation: 40 dB or more (at 4 GHz) Insertion loss 1.0 dB or less (at 4 GHz) V.S.W.R.: 1.5 or less (at 4 GHz) • High sensitivity in small size Size: 28.0 x 12.4 × 10.5 mm 1.102 × .488 × .413 inch
|
Original
|
PDF
|
HP4328A)
RM2- Diode
RM2-12V
RM2-24V
EX 571
RM2-L-12V
RM2-L2-12V
RM2-L2-24V
RM2-L-24V
HP4328A
RM2-9V
|
MD54-0007
Abstract: MD54-0007SMB MD54-0007TR MD54-0007TR-3000
Text: Low Cost MMIC Mixer, 2.1 – 2.7 GHz MD54-0007 V 1.0 Features • • • • • • Functional Schematic MMDS and WLAN Applications +18 dBm Input 1 dB Compression Point Greater than 20 dB LO to RF Isolation +13 dBm LO Drive Level No DC Bias Required Ultra-Miniature SOT-25 Plastic Package
|
Original
|
PDF
|
MD54-0007
OT-25
MD54-0007
MD54-0007SMB
MD54-0007TR
MD54-0007TR-3000
|
e20231
Abstract: 20231 transistor E101
Text: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power
|
Original
|
PDF
|
G-200,
1-877-GOLDMOS
1301-PTE
e20231
20231
transistor E101
|
SMT resistor
Abstract: TRANSISTOR 185
Text: e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts power output, it may be used for both CW and PEP applications. Ion
|
Original
|
PDF
|
G-200,
1-877-GOLDMOS
1301-PTB
SMT resistor
TRANSISTOR 185
|
Untitled
Abstract: No abstract text available
Text: e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP
|
Original
|
PDF
|
G-200,
1-877-GOLDMOS
1301-PTB
|
atmel 524 93c46
Abstract: ag20 taiyo st c632 Zener diode ST DIODE u12 c644 d28 diode DDR2 layout guidelines C155T TI4510 zener diode c531 915GM
Text: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :
|
Original
|
PDF
|
FAN5234
1/16W
300mil
12mil
NO266
PN800
VT8235CE)
atmel 524 93c46
ag20 taiyo
st c632 Zener diode
ST DIODE u12 c644
d28 diode
DDR2 layout guidelines
C155T
TI4510
zener diode c531
915GM
|
capacitor 35 v
Abstract: 20231 bav 17 diode
Text: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power
|
Original
|
PDF
|
G-200,
1-877-GOLDMOS
1301-PTE
capacitor 35 v
20231
bav 17 diode
|
E20124
Abstract: E201 G200 Ericsson RF POWER TRANSISTOR RF Transistor 1500 MHZ 1301P
Text: e E S A E PTE 20124* L E -R E 40 Watts, 1.465–1.513 GHz R P Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 watts minimum output power, it is specifically intended for cellular
|
Original
|
PDF
|
150pF
1-877-GOLDMOS
1301-PTE
E20124
E201
G200
Ericsson RF POWER TRANSISTOR
RF Transistor 1500 MHZ
1301P
|
pin configuration NPN transistor c828
Abstract: w32 smd transistor aa26 fairchild smd transistor w32 speedtech p65 GMT795 foxconn npn transistor w16 SMI TSOP 48pin c427 diode
Text: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :
|
Original
|
PDF
|
875ule.
1000pF
200mils
BCM5705M
NO266
pin configuration NPN transistor c828
w32 smd transistor
aa26 fairchild
smd transistor w32
speedtech p65
GMT795
foxconn
npn transistor w16
SMI TSOP 48pin
c427 diode
|
ZENER D30
Abstract: aa26 fairchild ag20 taiyo R170 diode DIODE SMD C136 w32 smd transistor foxconn fic at11 st c632 Zener diode transistor C458
Text: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :
|
Original
|
PDF
|
875C38
1/16W
1000pF
200mils
BCM5705M
NO266
ZENER D30
aa26 fairchild
ag20 taiyo
R170 diode
DIODE SMD C136
w32 smd transistor
foxconn
fic at11
st c632 Zener diode
transistor C458
|
speedtech p65
Abstract: foxconn ag20 taiyo transistor c107 m Socket AM2 Floppy connector 34 pin IDC to usb fic at11 d51 6pin AOD404 AO3401
Text: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :
|
Original
|
PDF
|
1/16W
SMT0603
1000pF
SMT0603
200mils
BCM5705M
NO266
speedtech p65
foxconn
ag20 taiyo
transistor c107 m
Socket AM2
Floppy connector 34 pin IDC to usb
fic at11
d51 6pin
AOD404
AO3401
|
fairchild diode smd code aa11
Abstract: IC1210-M128LQ fairchild diode smd code aa35 88i8030 78u30 SMD k31 Transistor d82 diode m36 smd diode ag20 taiyo IC1210
Text: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : PS1 MD34 2. PCI & IRQ & DMA Description : Version : 0.4 3. Block Diagram : D C 4. Net name Description :
|
Original
|
PDF
|
1/16W
R1122
R1123
R1124
pin23
pin26
25MHZ
fairchild diode smd code aa11
IC1210-M128LQ
fairchild diode smd code aa35
88i8030
78u30
SMD k31 Transistor
d82 diode
m36 smd diode
ag20 taiyo
IC1210
|
TP100
Abstract: No abstract text available
Text: SFH 487P SIEMENS GaAs INFRARED EMITTER Package Dimensions in Inches mm .122(3.1) .098(2.5) Surface not Flat Cathode .031 (0.8) .016 (0.4) .079 (2.0) .067(1.7) V .100 (2.54) T1 (3mm) Package Flat Plastic Lens Long Term Stability Good Spectral Match with Silicon
|
OCR Scan
|
PDF
|
SFH487P
TP100
|
|
|
DP0702
Abstract: dn1001 dn1002 Adams-Russell SDI Microwave diodes dn1002 MIL-I-45208A DP0701 DP-2000 DN1005A DP1005A
Text: ADAMS-RUSSELL/ I | S D I INC □□0G3Q4 2 |~ V - * T-ZS " Description * Features The DP series of PIN diodes and the DN series of NIP diodes are designed to cover a wide range of applica tions th at fall into the general catagories of switching, phase shifting, attenuating and limiting.
|
OCR Scan
|
PDF
|
0E1335E
D-1012and
DP0702
dn1001 dn1002
Adams-Russell
SDI Microwave diodes
dn1002
MIL-I-45208A
DP0701
DP-2000
DN1005A
DP1005A
|
IXTH10N60
Abstract: IXTM10N60
Text: CORP IflE D • 4bab22b □ IX Y S OOOObO'ï 7 ■ IXTH10N60, IXTM10N60 MAXIMUM RATINGS 10 AMPS, 600 V, 0.55Q/0.7S2 'T-201 -IS , Sym. Parameter Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) IXTH10N60 IXTM10N60 Unit 600 600 ±20 ±30 Vd0 Vdc
|
OCR Scan
|
PDF
|
4bab22b
IXTH10N60,
IXTM10N60
55Q/0
IXTH10N60
CHARACTE420
O-204
O-220
O-247
|
4N95
Abstract: 4n100 mosfet IXTP4N100 ixtm4N100 ixtm4n95
Text: I X Y S CÔRP □ I X Y läE D • 4bôba2b OQOGbOH Ö IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 S 4 AMPS, 950-1000 V, 3.3Q/4.0Q MAXIMUM RATINGS Sym. Parameter Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient
|
OCR Scan
|
PDF
|
IXTP4N95,
IXTP4N100,
IXTM4N95,
IXTM4N100
IXTP4N95
IXTM4N95
IXTP4N100
EL420
O-204
4N95
4n100 mosfet
ixtm4n95
|
IXTH12N50
Abstract: No abstract text available
Text: I X Y S CORP 1 ÔE D • 4bôb22b GOGGblB <=1 IXTH12N45, IXTH12N50, IXTM12N45, IXTM12N50 12 AMPS, 450-500 V, 0.4Q/0.5Q MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient
|
OCR Scan
|
PDF
|
IXTH12N45,
IXTH12N50,
IXTM12N45,
IXTM12N50
IXTH12N45
IXTM12N45
IXTH12N50
IXTM12N50
O-204
O-220
|
15N50A
Abstract: IXTM15N45 15n50 IXTM15N50
Text: I X Y S CORF? □IXYS 1ÖE D • 4bäb22b QOOQblE 7 ■ IXTH15N45A, IXTH15N50A, ÏXTM15N45A, IXTM15N50A 15 AMPS, 450-500 V, 0.4Q MAXIMUM RATINGS Parameter Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient
|
OCR Scan
|
PDF
|
IXTH15N45A
IXTH15N50A
IXTM15N45A,
IXTM15N50A
IXTM15N45A
IXTH15N50A
O-204
O-220
15N50A
IXTM15N45
15n50
IXTM15N50
|
6n60a
Abstract: IXTM6N60 6n60 600 volt n channel power mosfet
Text: I X Y S CO RP löE D • 4L,abS2b O Q O D b l O 3 ■ IXTP6N60, IXTM6N60 □ IX Y S 6 AMPS, 600 V, 1.2S/1.5Q MAXIMUM RATINGS Parameter IXTP6N60 IXTM6N60 Sym. Drain-Source Voltage 1 Drain-Gale Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient
|
OCR Scan
|
PDF
|
IXTP6N60
IXTM6N60
IXTP6N60,
Drain-Sour420
O-204
O-220
O-247
6n60a
6n60
600 volt n channel power mosfet
|
Untitled
Abstract: No abstract text available
Text: A dvanced P ow er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV' 200V 58A 200V 50A 0.045Í2 0.060Q AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.
|
OCR Scan
|
PDF
|
APT20M45BNFR
APT20M60BNFR
APT20M45/20M60BNFR
O-247AD
|
BURR-BROWN 3656
Abstract: No abstract text available
Text: For Im m iiate M i a m i , M a d four Local Salesperson BU R R -B R O W N 3656 Transformer Coupled ISOLATION AMPLIFIER FEATURES APPLICATIONS • INTERNAL ISOLATED POWER • MEDICAL Patient Monitoring and Diagnostic Instrumentation • 8000V ISOLATION TEST VOLTAGE
|
OCR Scan
|
PDF
|
125dB
I254B?
17313b5
BURR-BROWN 3656
|
op 50MHZ OPEN dip
Abstract: SMD R1M 29 CLC446 CLC446A8B CLC446AJ CLC446AJE CLC446AJP CLC446ALC CLC446AMC RG 331 coaxial cable
Text: J National CLC446 æ Semiconductor Comlinear CLC446 400MHz, 50mW Current-Feedback Op Amp General Description Features The Comlinear CLC446 is a very high-speed unity-gain-stable current-feed back op amp that is designed to deliver the highest ' levels of performance from a mere 50mW quiescent power. It
|
OCR Scan
|
PDF
|
CLC446
400MHz,
CLC446
400MHz
000V/jis
900ps
bS011B4
op 50MHZ OPEN dip
SMD R1M 29
CLC446A8B
CLC446AJ
CLC446AJE
CLC446AJP
CLC446ALC
CLC446AMC
RG 331 coaxial cable
|
52AVP
Abstract: unitrode stackable rectifier
Text: UNITRODE CORP TE » ^ = 1 3 4 7 ^ 3 DD10fl03 S POWER MOSFET TRANSISTORS UFND120 U FND120 UFND123 100 Volt, 0.3 Ohm N-Channel FEATURES DESCRIPTION • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled
|
OCR Scan
|
PDF
|
DD10fl03
UFND120
UFND123
52AVP
unitrode stackable rectifier
|
