4500 MOS
Abstract: No abstract text available
Text: APT20M38BVR A dvanced P o w er Te c h n o l o g y 200V 67A 0.038Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT20M38BVR
O-247
APT20M38BVR
00A/ps)
O-247AD
4500 MOS
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diode um 67A
Abstract: 0038Q
Text: APT20M38SVR A dvanced P ow er T e c h n o lo g y 9 200V 67A 0.038Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT20M38SVR
APT20M38SVR
00A/ps)
M1L-STD-750
diode um 67A
0038Q
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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OD-80
OD-323
OT-23
OT-89
OT-143
OT-223
OT-323
TRIAC 97A6
S0805BH
13003 TRANSISTOR TO220 equivalent
triacs bt 804 600v
Triac bt 808 600C
Diode SOT-23 marking 15d
zener diode 1N PH 48
6Bs smd transistor
Z0409MF equivalent
BT 808 600C
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color television picture tube pin voltage
Abstract: 3AT2 jedec E12-70 VICTOREEN 440 general electric E12-70 tube 3AT2
Text: — PRODUCT INFORMATION — E L E C T R O N IC mmm&m Compactron Diode IN A C T IO N - 3AT2-B FOR TV HIGH-VOLTAGE RECTIFIER APPLICATIO NS TUBES COLOR TV TYPE Page 1 X-RADIATION RATING 1.7 MILLIAMPERES DC 30000 VOLTS DC The 3AT2-B is a heater-cathode type diode designed for use in co lo r te le v is io n rece ive rs as the h igh-voltage
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K-55011-Ã
030B-1
color television picture tube pin voltage
3AT2
jedec E12-70
VICTOREEN 440
general electric
E12-70
tube 3AT2
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3aw2
Abstract: VICTOREEN general electric jedec E12-70 E12-70 color television picture tube pin voltage TV 106-2 VICTOREEN 440 "VICTOREEN"
Text: — PRODUCT INFORMATION — EL E C T R O N IC mmm&m Compactron Diode IN A C T IO N - FOR TV HIGH-VOLTAGE RECTIFIER APPLICATIONS TUBES 30000 VOLTS DC • COLOR TV TYPE Page 1 2.2 MILLIAMPERES X-RADIATIOIM RATING The 3AW2-A is a heater-cathode type diode designed for use in co lo r te le v is io n rece ive rs as the h igh-voltage re c tifie r
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jedec E12-70
Abstract: E12-70 5SB1 Scans-0017382 general electric VICTOREEN 440
Text: PRODUCT INFORMATION Page 1 Compactron Diode FOR TV HIGH-VOLTAGE RECTIFIER APPLICATIONS TUBES COLOR TV TYPE 2BU2 24000 VOLTS DC 1.5 MILLIAMPERES DC X-RADIATION RATING The 2 B U 2 is a heater-cathode type diode designed for use in color te le v is io n rece ive rs as the h ig h -vo lta g e re c tifie r
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K-5SB11-TD30B-
jedec E12-70
E12-70
5SB1
Scans-0017382
general electric
VICTOREEN 440
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3DH3
Abstract: VICTOREEN general electric
Text: — PRODUCT INFORMATION — Page 1 Diode 3DH3 FOR TV HIGH-VOLTAGE TUBES RECTIFIER APPLICATIONS i 2.2 MILLIAMPERES DC 30000 VOLTS DC • COLOR TV TYPE X-RADIATION RATING ■ DIFFUSION BONDED CATHODE The 3 D H 3 is a heater-cathode type diode designed fo r use in co lo r te le v is io n re ce ive rs as the h ig h -vo lta g e r e c tifie r
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3DS3
Abstract: VICTOREEN 30S3 heater protective color television picture tube pin voltage radiation tube octal tube socket general electric instrument department general electric company
Text: PRODUCT INFORMATION — Page 1 Diode 3DS3 FOR TV HIGH-VOLTAGE RECTIFIER APPLICATIONS TUBES CO LO R TV TYPE i 30000 VO LTS DC i 2.2 MILLIAMPERES DC • X-RADIATION RATING The 3DS3 is a heater-cathode type diode designed for use in color televisio n receivers as the high voltage rectifier
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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ZD 103
Abstract: diode RA 225 R
Text: APT20M19JVR • R ADVANCED W .\A pow er Te c h n o l o g y “ 0.019Q 200V 112A POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M19JVR
OT-227
E145592
ZD 103
diode RA 225 R
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1XFH12n100
Abstract: transistor 13n80
Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure
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4bflb22b
1532A
200ns)
IXFH12N100
IXFH10N100
IXFM12N100
IXFM10N100
1XFH12n100
transistor 13n80
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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color television picture tube pin voltage
Abstract: VICTOREEN 3bw2 jedec E12-70 E12-70 general electric
Text: — PRODUCT INFORMATION — Page 1 Compactron Diode 3BW2 FOR TV HIGH-VOLTAGE RECTIFIER APPLICATIONS TUBES • 30000 VOLTS DC ■ COLOR TV TYPE ■ 2.2 MILLIAMPERES DC ■ X-RADIATION RATING ■ DIFFUSION BONDED CATHODE The 3BW2 is a heater-cathode type diode designed for use in color television receivers as the high-voltage rectifier
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VICTOREEN 440
Abstract: VICTOREEN Receiving Tubes general electric jedec E12-70 E12-70 tv picture tube specification Scans-0017336 "VICTOREEN"
Text: — PRODUCT INFORMATION — Page 1 Compactron Diode FOR TV HIGH-VOLTAGE RECTIFIER APPLICATIONS TUBES i MONOCHROME TYPE i 22000 VOLTS DC i 0.5 MILLIAMPERES DC i X-RADIATIOIM RATING The 1BY2-A is a filamentary diode designed for use in televisio n receivers as the high-voltage rectifie r to supply
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general electric
Abstract: 871 diode Scans-0017338 B825 VICTOREEN resistor instrument department general electric company
Text: — PRODUCT INFORMATION — Page 1 1DG3-A Diode FOR TV HIGH-VOLTAGE RECTIFIER APPLICATIONS Y jߣ$ • MONOCHROME TYPE > 22000 VOLTS DC ■ 0 .5 MILLIAMPERES DC ■ X-RADIATION RATING The 1DG3-A is a fila m e n ta ry dio d e de sig n ed fo r use in te le v is io n re c e iv e rs as the h ig h -v o lta g e r e c tifie r to s u p p ly
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VN66AF equivalent
Abstract: VN67AF equivalent mospower cross vn66af VN66AF 2N6658 IRF540 irf540 equivalent irf540 TTL VN67AF VN88AD
Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
VN66AF equivalent
VN67AF equivalent
mospower cross vn66af
VN66AF
2N6658
irf540 equivalent
irf540 TTL
VN67AF
VN88AD
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VN66AF
Abstract: VN67AF VN46AF vn89af VN88AF 2N6658 IN400 VN46 IRF620 IRF630
Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150
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IRF640
IRF642
IRF630
IRF632
IRF620
IRF622
VN1706D
IRF641
IRF643
IRF631
VN66AF
VN67AF
VN46AF
vn89af
VN88AF
2N6658
IN400
VN46
IRF620
IRF630
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BDV67
Abstract: BDV66A BDV67A BDV67C BDV97 BDV66
Text: BDV67A; B BDV67C; D DARLINGTON POWER TRANSISTORS NPN epitaxial base Darlington transistors fo r audio output stages and general amplifier and switching applications. PNP complements are B D V 66A , B, C and D. Matched complementary pairs can be supplied. _
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BDV67A;
BDV67C;
BDV66A,
BDV67A
BDV67
BDV97
8DV67
bbS3T31
BDV66A
BDV67C
BDV66
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2N6658
Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
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vn10ke
vn10le
to-52
vn2406m
vn2410m
VW1706M
vn1710m
vn1206m
vn1210m
vn0808m
2N6658
VN66AF
siliconix VN10KM
VN89AF
VN88AF
2n6657
2N6656
VN67
VN80AF
VN89AD
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Untitled
Abstract: No abstract text available
Text: SN54LS/74LS365A SN54LS/74LS366A SN54LS/74LS367A SN54LS/74LS368A MOTOROLA D ESCR IPTIO N — T he se devices are high speed hex buffers with 3-state outputs. They are organized a s single 6-bit or 2-bit/4-bit, with inverting or non-inverting data D paths. The outputs are designed to
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LS365A,
LS366A,
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siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility
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J-23548
K24123
i39-40i
NZ3766
53-C-03
siliconix fet
Transistor E112 FET N-Channel
JFET TRANSISTOR REPLACEMENT GUIDE j201
E112 jfet
jfet bfw10 terminals
JFET BFW10 SPECIFICATIONS
4856a mosfet
Transistor E112 FET
FETs in Balanced Mixers Ed Oxner
equivalent components FET BFW10
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T0306
Abstract: general electric 2as2 jedec E12-70 E12-70 2as2a VICTOREEN 440 Scans-0017381
Text: E LE C T R O N IC — PRODUCT INFORMATION — Page 1 Compactron Diode IN A C T IO N FOR TV HIGH-VOLTAGE RECTIFIER APPLICATIONS TUBES i COLOR TV TYPE 1.5 MILLIAMPERES DC 24000 VOLTS DC X-RADIATION RATING The 2AS2-A is a heater-cathode type diode designed for use in color television receivers as the high-voltage rectifier
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K-5561I-T0306-1
T0306
general electric
2as2
jedec E12-70
E12-70
2as2a
VICTOREEN 440
Scans-0017381
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color television picture tube pin voltage
Abstract: general electric 3dr3 instrument department general electric company
Text: — PRODUCT INFORMATION — Page 1 Diode 3DR3 FOR TV HIGH-VOLTAGE RECTIFIER APPLICATIONS TUBES CO LO R TV TYPE X-RADIATION RATING • 2 .0 MILLIAMPERES DC 30000 VO LTS DC The 3DR3 is a heater-cathode type diode designed for use in color te levisio n re ce ive rs as the high voltage rec
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15unications
color television picture tube pin voltage
general electric
3dr3
instrument department general electric company
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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