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    DIODE T4 A1 Search Results

    DIODE T4 A1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE T4 A1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1n4148ws

    Abstract: No abstract text available
    Text: SOD-323 Plastic-Encapsulate Diode BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 Features 1.00 1.70 Marking: T4 0.30 • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance


    Original     		PDF OD-323 BAV16WS/1N4148WS OD-323 019REF 475REF 1n4148ws

    T4 SOD-123

    Abstract: diode marking T4 sod123 DIODE T4 marking sod 123 t4 marking A2 SOD-123
    Text: SOD-123 Plastic-Encapsulate Diode BAV16W/1N4148W FAST SWITCHING DIODE SOD-123 Features • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance 1.05 · · 2.70 1.6 Marking: T6,T4


    Original     		PDF OD-123 BAV16W/1N4148W OD-123 020REF 500REF T4 SOD-123 diode marking T4 sod123 DIODE T4 marking sod 123 t4 marking A2 SOD-123

    1N4148WS

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 Features 1.00 1.70 Marking: T4 0.30 • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications


    Original     		PDF OD-323 BAV16WS/1N4148WS OD-323 019REF 475REF 1N4148WS

    DIODE T4 marking

    Abstract: DIODE T7 marking marking D9 diode D6 DIODE 4e01 D10 diode T3 DIODE
    Text: V23990-K229-A10-PM target datasheet MiniSKiiP 2 PIM 1200V/25A MiniSKiiP® 2 housing Features ● Solderless interconnection ● Trench Fieldstop technology Target Applications Schematic ● Industrial Motor Drives Types ● V23990-K229-A10-PM Maximum Ratings


    Original     		PDF V23990-K229-A10-PM 200V/25A DIODE T4 marking DIODE T7 marking marking D9 diode D6 DIODE 4e01 D10 diode T3 DIODE

    DIODE T4 A1

    Abstract: diode marking T4
    Text: BBY 52-05W Silicon Tuning Diode Preliminary data 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking Ordering Code Pin Configuration


    Original     		PDF 2-05W VSO05561 EHA07179 OT-323 DIODE T4 A1 diode marking T4

    DK-7575

    Abstract: 02ATEX
    Text: Electronic Terminal Block with Optocoupler 1/2 Data sheet 56 mm / 2.2 in Optocoupler for DIN 35 rail A2 - 0V A1 + A RL +24 V 91 mm / 3.58 in Item-No. Description Input DC 24 V, Output DC 24 V / 500 mA negative switching Pack.-unit pcs 859-708 • Optocoupler for medium switching powers.


    Original     		PDF UL508 CSA22 E175199, UL1604/ E198726 EN50021 DK-7575 10-way d670800e 02ATEX

    1n914 surface mount diode

    Abstract: 1N4148 minimelf marking code DIODE d6 A6 DIODE 1n4148 marking a6 sot363 ka2 t4 DIODE T4 marking
    Text: MCC Micro Commercial Components SWITCHING DIODES MCC Part Number Peak Reverse Voltage PRV V Maximum Reverse Current @ 25°C Reverse Recovery Time mA Junction Capacitance VR =4.0V, f=1MHz Cj Max. pF trr Max. nS Maximum Power Dissipation @ TA=25°C PD mW 1.00


    Original     		PDF 300mW00mW-500mW DODO-35 1N4148 1N4150 1N4151 1N4154 1N4448 1N4454 500mW 1n914 surface mount diode 1N4148 minimelf marking code DIODE d6 A6 DIODE 1n4148 marking a6 sot363 ka2 t4 DIODE T4 marking

    BU21024FV-M

    Abstract: BU21023
    Text: BU21024FV-M Touch Screen Controller ICs Resistive Type Touch Screen Controller ICs BU21023GUL, BU21023MUV, BU21024FV-M No.11105EAT01 ●Description Unlike most resistive touch screen controllers, the BU21023/ BU21024 4-wire resistive touch screen controllers enable


    Original     		PDF BU21024FV-M BU21023GUL, BU21023MUV, 11105EAT01 BU21023/ BU21024 R1120A BU21024FV-M BU21023

    BU21024

    Abstract: BU21023 BU21023GUL hand gesture using embedded system 11105EAT01 T3/AD2S1210 application note program in c
    Text: BU21023GUL Touch Screen Controller ICs Resistive Type Touch Screen Controller ICs BU21023GUL, BU21023MUV, BU21024FV-M No.11105EAT01 ●Description Unlike most resistive touch screen controllers, the BU21023/ BU21024 4-wire resistive touch screen controllers enable


    Original     		PDF BU21023GUL BU21023GUL, BU21023MUV, BU21024FV-M 11105EAT01 BU21023/ BU21024 R1120A BU21023 BU21023GUL hand gesture using embedded system 11105EAT01 T3/AD2S1210 application note program in c

    BLOCK DIAGRAM OF 4 wire resistive TOUCH screen

    Abstract: DSA0061768
    Text: Touch Screen Controller ICs Resistive Type Touch Screen Controller ICs BU21023GUL, BU21023MUV, BU21024FV-M No.11105EAT01 ●Description Unlike most resistive touch screen controllers, the BU21023/ BU21024 4-wire resistive touch screen controllers enable dual-touch detection and gesture recognition. These intelligent controllers expose a set of registers to a host processor and


    Original     		PDF BU21023GUL, BU21023MUV, BU21024FV-M 11105EAT01 BU21023/ BU21024 R1120A BLOCK DIAGRAM OF 4 wire resistive TOUCH screen DSA0061768

    BU21023MUV

    Abstract: DIODE T4 BU21024
    Text: BU21023MUV Touch Screen Controller ICs Resistive Type Touch Screen Controller ICs BU21023GUL, BU21023MUV, BU21024FV-M No.11105EAT01 ●Description Unlike most resistive touch screen controllers, the BU21023/ BU21024 4-wire resistive touch screen controllers enable


    Original     		PDF BU21023MUV BU21023GUL, BU21023MUV, BU21024FV-M 11105EAT01 BU21023/ BU21024 R1120A BU21023MUV DIODE T4

    smd diode A2

    Abstract: capacitor 1n0 SMD 0805 capacitor zener diode c46 diode smd A2 zener SMD T4 CAPACITOR PORCELAIN SMD resistor A3 capacitor smd
    Text: STEVAL-TDR029V1 - Bill of Material Item Code Description Unit Qty A1 A2 A3 C1 C2 C3 C4 C5 C6 C7 C9 C10 C11 C14 C15 C17 C19 C21 C22 C23 C24 C25 C27 C28 C29 C30 C31 C32 C33 C34 C36 C38 C40 C41 C42 C43 C44 C45 C46 C47 C48 C49 D1 D2 DZ1 DZ2 FC1 FC2 FC3 FCS1 L1


    Original     		PDF STEVAL-TDR029V1 DMC10008 PCB10007 PCB10008 CCB470PA CER220UE CCD100NB CCB01N0A CCD02N2A smd diode A2 capacitor 1n0 SMD 0805 capacitor zener diode c46 diode smd A2 zener SMD T4 CAPACITOR PORCELAIN SMD resistor A3 capacitor smd

    8A17

    Abstract: MOSFET 60V 210A STB16NF06L
    Text: STB16NF06L N-CHANNEL 60V - 0.07 Ω - 16A D2PAK STripFET POWER MOSFET TYPE STB16NF06L • ■ ■ ■ ■ VDSS RDS on ID 60 V <0.09 Ω 16 A TYPICAL RDS(on) = 0.07Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC LOW THRESHOLD DRIVE SURFACE-MOUNTING D2PAK (TO-263)


    Original     		PDF STB16NF06L O-263) O-263 8A17 MOSFET 60V 210A STB16NF06L

    Untitled

    Abstract: No abstract text available
    Text: STB130NH02L N-CHANNEL 20V - 0.0034 Ω - 90A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION TYPE STB130NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0044 Ω 90 A(#) TYPICAL RDS(on) = 0.0034 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		PDF STB130NH02L O-263) O-263 STB130NH02L

    STB60NE06L-16

    Abstract: No abstract text available
    Text: STB60NE06L-16 N-CHANNEL 60V - 0.014 Ω - 60A D2PAK STripFET II POWER MOSFET TYPE STB60NE06L-16 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 60 V <0.016 Ω 60 A TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original     		PDF STB60NE06L-16 O-263) STB60NE06L-16

    STB100NF04L

    Abstract: No abstract text available
    Text: STB100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power MOSFET is the latest development of


    Original     		PDF STB100NF04L STB100NF04L

    STB16NF06L

    Abstract: No abstract text available
    Text: STB16NF06L N-CHANNEL 60V - 0.07 Ω - 16A D2PAK STripFET POWER MOSFET TYPE STB16NF06L • ■ ■ ■ ■ VDSS RDS on ID 60 V <0.09 Ω 16 A TYPICAL RDS(on) = 0.07Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC LOW THRESHOLD DRIVE SURFACE-MOUNTING D2PAK (TO-263)


    Original     		PDF STB16NF06L O-263) O-263 STB16NF06L

    STB60NE06L-16

    Abstract: No abstract text available
    Text: STB60NE06L-16 N-CHANNEL 60V - 0.014 Ω - 60A D2PAK STripFET II POWER MOSFET TYPE STB60NE06L-16 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V <0.016 Ω 60 A TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original     		PDF STB60NE06L-16 O-263) STB60NE06L-16

    Untitled

    Abstract: No abstract text available
    Text: STB100NF04L N-CHANNEL 40V - 0.0036Ω - 100A D2PAK STripFET POWER MOSFET TYPE STB100NF04L • ■ ■ ■ V DSS RDS on ID 40 V <0.0042 Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 1 DESCRIPTION This Power Mosfet is the latest development of


    Original     		PDF STB100NF04L O-263

    3240A

    Abstract: STB100NF04L
    Text: STB100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power MOSFET is the latest development of


    Original     		PDF STB100NF04L 3240A STB100NF04L

    STB95NF03

    Abstract: No abstract text available
    Text: STB95NF03 N-CHANNEL 30V - 0.0065 Ω - 95A D²PAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STB95NF03 30 V <0.007 Ω 80 A TYPICAL RDS(on) = 0.0065 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR


    Original     		PDF STB95NF03 O-263) O-263 STB95NF03

    STB95NF03

    Abstract: DIODE T4 symbol
    Text: STB95NF03 N-CHANNEL 30V - 0.0065 Ω - 95A D²PAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STB95NF03 30 V <0.007 Ω 80 A TYPICAL RDS(on) = 0.0065 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR


    Original     		PDF STB95NF03 O-263) O-263 STB95NF03 DIODE T4 symbol

    Untitled

    Abstract: No abstract text available
    Text: STB80NF03L-04 N-CHANNEL 30V - 0.0035Ω - 80A D2PAK STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS R DS on ID STB80NF03L-04 30 V <0.004 Ω 80 A TYPICAL RDS(on) = 0.0035Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 3 1 DESCRIPTION


    Original     		PDF STB80NF03L-04 O-263

    Untitled

    Abstract: No abstract text available
    Text: BBY 52-05W Infineon Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment R Pin Configuration BBY 52-05W S2s upon request 1 = A1 CM II Ordering Code


    OCR Scan     		PDF 2-05W OT-323