1n4148ws
Abstract: No abstract text available
Text: SOD-323 Plastic-Encapsulate Diode BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 Features 1.00 1.70 Marking: T4 0.30 • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance
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Original
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OD-323
BAV16WS/1N4148WS
OD-323
019REF
475REF
1n4148ws
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PDF
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T4 SOD-123
Abstract: diode marking T4 sod123 DIODE T4 marking sod 123 t4 marking A2 SOD-123
Text: SOD-123 Plastic-Encapsulate Diode BAV16W/1N4148W FAST SWITCHING DIODE SOD-123 Features • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance 1.05 · · 2.70 1.6 Marking: T6,T4
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Original
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OD-123
BAV16W/1N4148W
OD-123
020REF
500REF
T4 SOD-123
diode marking T4 sod123
DIODE T4 marking
sod 123 t4 marking
A2 SOD-123
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PDF
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1N4148WS
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 Features 1.00 1.70 Marking: T4 0.30 • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications
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Original
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OD-323
BAV16WS/1N4148WS
OD-323
019REF
475REF
1N4148WS
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PDF
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DIODE T4 marking
Abstract: DIODE T7 marking marking D9 diode D6 DIODE 4e01 D10 diode T3 DIODE
Text: V23990-K229-A10-PM target datasheet MiniSKiiP 2 PIM 1200V/25A MiniSKiiP® 2 housing Features ● Solderless interconnection ● Trench Fieldstop technology Target Applications Schematic ● Industrial Motor Drives Types ● V23990-K229-A10-PM Maximum Ratings
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Original
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V23990-K229-A10-PM
200V/25A
DIODE T4 marking
DIODE T7 marking
marking D9 diode
D6 DIODE
4e01
D10 diode
T3 DIODE
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PDF
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DIODE T4 A1
Abstract: diode marking T4
Text: BBY 52-05W Silicon Tuning Diode Preliminary data 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking Ordering Code Pin Configuration
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Original
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2-05W
VSO05561
EHA07179
OT-323
DIODE T4 A1
diode marking T4
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PDF
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DK-7575
Abstract: 02ATEX
Text: Electronic Terminal Block with Optocoupler 1/2 Data sheet 56 mm / 2.2 in Optocoupler for DIN 35 rail A2 - 0V A1 + A RL +24 V 91 mm / 3.58 in Item-No. Description Input DC 24 V, Output DC 24 V / 500 mA negative switching Pack.-unit pcs 859-708 • Optocoupler for medium switching powers.
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Original
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UL508
CSA22
E175199,
UL1604/
E198726
EN50021
DK-7575
10-way
d670800e
02ATEX
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PDF
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1n914 surface mount diode
Abstract: 1N4148 minimelf marking code DIODE d6 A6 DIODE 1n4148 marking a6 sot363 ka2 t4 DIODE T4 marking
Text: MCC Micro Commercial Components SWITCHING DIODES MCC Part Number Peak Reverse Voltage PRV V Maximum Reverse Current @ 25°C Reverse Recovery Time mA Junction Capacitance VR =4.0V, f=1MHz Cj Max. pF trr Max. nS Maximum Power Dissipation @ TA=25°C PD mW 1.00
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Original
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300mW00mW-500mW
DODO-35
1N4148
1N4150
1N4151
1N4154
1N4448
1N4454
500mW
1n914 surface mount diode
1N4148 minimelf
marking code DIODE d6
A6 DIODE 1n4148
marking a6 sot363
ka2 t4
DIODE T4 marking
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PDF
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BU21024FV-M
Abstract: BU21023
Text: BU21024FV-M Touch Screen Controller ICs Resistive Type Touch Screen Controller ICs BU21023GUL, BU21023MUV, BU21024FV-M No.11105EAT01 ●Description Unlike most resistive touch screen controllers, the BU21023/ BU21024 4-wire resistive touch screen controllers enable
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Original
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BU21024FV-M
BU21023GUL,
BU21023MUV,
11105EAT01
BU21023/
BU21024
R1120A
BU21024FV-M
BU21023
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PDF
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BU21024
Abstract: BU21023 BU21023GUL hand gesture using embedded system 11105EAT01 T3/AD2S1210 application note program in c
Text: BU21023GUL Touch Screen Controller ICs Resistive Type Touch Screen Controller ICs BU21023GUL, BU21023MUV, BU21024FV-M No.11105EAT01 ●Description Unlike most resistive touch screen controllers, the BU21023/ BU21024 4-wire resistive touch screen controllers enable
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Original
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BU21023GUL
BU21023GUL,
BU21023MUV,
BU21024FV-M
11105EAT01
BU21023/
BU21024
R1120A
BU21023
BU21023GUL
hand gesture using embedded system
11105EAT01
T3/AD2S1210 application note program in c
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PDF
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BLOCK DIAGRAM OF 4 wire resistive TOUCH screen
Abstract: DSA0061768
Text: Touch Screen Controller ICs Resistive Type Touch Screen Controller ICs BU21023GUL, BU21023MUV, BU21024FV-M No.11105EAT01 ●Description Unlike most resistive touch screen controllers, the BU21023/ BU21024 4-wire resistive touch screen controllers enable dual-touch detection and gesture recognition. These intelligent controllers expose a set of registers to a host processor and
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Original
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BU21023GUL,
BU21023MUV,
BU21024FV-M
11105EAT01
BU21023/
BU21024
R1120A
BLOCK DIAGRAM OF 4 wire resistive TOUCH screen
DSA0061768
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PDF
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BU21023MUV
Abstract: DIODE T4 BU21024
Text: BU21023MUV Touch Screen Controller ICs Resistive Type Touch Screen Controller ICs BU21023GUL, BU21023MUV, BU21024FV-M No.11105EAT01 ●Description Unlike most resistive touch screen controllers, the BU21023/ BU21024 4-wire resistive touch screen controllers enable
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Original
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BU21023MUV
BU21023GUL,
BU21023MUV,
BU21024FV-M
11105EAT01
BU21023/
BU21024
R1120A
BU21023MUV
DIODE T4
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PDF
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smd diode A2
Abstract: capacitor 1n0 SMD 0805 capacitor zener diode c46 diode smd A2 zener SMD T4 CAPACITOR PORCELAIN SMD resistor A3 capacitor smd
Text: STEVAL-TDR029V1 - Bill of Material Item Code Description Unit Qty A1 A2 A3 C1 C2 C3 C4 C5 C6 C7 C9 C10 C11 C14 C15 C17 C19 C21 C22 C23 C24 C25 C27 C28 C29 C30 C31 C32 C33 C34 C36 C38 C40 C41 C42 C43 C44 C45 C46 C47 C48 C49 D1 D2 DZ1 DZ2 FC1 FC2 FC3 FCS1 L1
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Original
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STEVAL-TDR029V1
DMC10008
PCB10007
PCB10008
CCB470PA
CER220UE
CCD100NB
CCB01N0A
CCD02N2A
smd diode A2
capacitor 1n0
SMD 0805 capacitor
zener diode c46
diode smd A2
zener SMD T4
CAPACITOR PORCELAIN
SMD resistor
A3 capacitor smd
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PDF
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8A17
Abstract: MOSFET 60V 210A STB16NF06L
Text: STB16NF06L N-CHANNEL 60V - 0.07 Ω - 16A D2PAK STripFET POWER MOSFET TYPE STB16NF06L • ■ ■ ■ ■ VDSS RDS on ID 60 V <0.09 Ω 16 A TYPICAL RDS(on) = 0.07Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC LOW THRESHOLD DRIVE SURFACE-MOUNTING D2PAK (TO-263)
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STB16NF06L
O-263)
O-263
8A17
MOSFET 60V 210A
STB16NF06L
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PDF
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Untitled
Abstract: No abstract text available
Text: STB130NH02L N-CHANNEL 20V - 0.0034 Ω - 90A D2PAK STripFET III POWER MOSFET FOR DC-DC CONVERSION TYPE STB130NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0044 Ω 90 A(#) TYPICAL RDS(on) = 0.0034 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK
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STB130NH02L
O-263)
O-263
STB130NH02L
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PDF
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STB60NE06L-16
Abstract: No abstract text available
Text: STB60NE06L-16 N-CHANNEL 60V - 0.014 Ω - 60A D2PAK STripFET II POWER MOSFET TYPE STB60NE06L-16 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 60 V <0.016 Ω 60 A TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY
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Original
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STB60NE06L-16
O-263)
STB60NE06L-16
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PDF
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STB100NF04L
Abstract: No abstract text available
Text: STB100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power MOSFET is the latest development of
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Original
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STB100NF04L
STB100NF04L
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PDF
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STB16NF06L
Abstract: No abstract text available
Text: STB16NF06L N-CHANNEL 60V - 0.07 Ω - 16A D2PAK STripFET POWER MOSFET TYPE STB16NF06L • ■ ■ ■ ■ VDSS RDS on ID 60 V <0.09 Ω 16 A TYPICAL RDS(on) = 0.07Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC LOW THRESHOLD DRIVE SURFACE-MOUNTING D2PAK (TO-263)
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Original
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STB16NF06L
O-263)
O-263
STB16NF06L
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PDF
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STB60NE06L-16
Abstract: No abstract text available
Text: STB60NE06L-16 N-CHANNEL 60V - 0.014 Ω - 60A D2PAK STripFET II POWER MOSFET TYPE STB60NE06L-16 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V <0.016 Ω 60 A TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY
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Original
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STB60NE06L-16
O-263)
STB60NE06L-16
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PDF
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Untitled
Abstract: No abstract text available
Text: STB100NF04L N-CHANNEL 40V - 0.0036Ω - 100A D2PAK STripFET POWER MOSFET TYPE STB100NF04L • ■ ■ ■ V DSS RDS on ID 40 V <0.0042 Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 1 DESCRIPTION This Power Mosfet is the latest development of
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Original
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STB100NF04L
O-263
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PDF
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3240A
Abstract: STB100NF04L
Text: STB100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power MOSFET is the latest development of
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Original
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STB100NF04L
3240A
STB100NF04L
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PDF
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STB95NF03
Abstract: No abstract text available
Text: STB95NF03 N-CHANNEL 30V - 0.0065 Ω - 95A D²PAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STB95NF03 30 V <0.007 Ω 80 A TYPICAL RDS(on) = 0.0065 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR
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Original
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STB95NF03
O-263)
O-263
STB95NF03
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PDF
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STB95NF03
Abstract: DIODE T4 symbol
Text: STB95NF03 N-CHANNEL 30V - 0.0065 Ω - 95A D²PAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STB95NF03 30 V <0.007 Ω 80 A TYPICAL RDS(on) = 0.0065 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR
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Original
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STB95NF03
O-263)
O-263
STB95NF03
DIODE T4 symbol
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PDF
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Untitled
Abstract: No abstract text available
Text: STB80NF03L-04 N-CHANNEL 30V - 0.0035Ω - 80A D2PAK STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS R DS on ID STB80NF03L-04 30 V <0.004 Ω 80 A TYPICAL RDS(on) = 0.0035Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 3 1 DESCRIPTION
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Original
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STB80NF03L-04
O-263
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PDF
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Untitled
Abstract: No abstract text available
Text: BBY 52-05W Infineon Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment R Pin Configuration BBY 52-05W S2s upon request 1 = A1 CM II Ordering Code
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OCR Scan
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2-05W
OT-323
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PDF
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