100 kilo ohms resistor specifications
Abstract: PCA96XX PCA9306 69RC BAT54A LPC932 P82B96 PCA9600 PCA9633 PCA9665
Text: I2C Maximum Clock Speed Calculator Mar 2009 BLSIC/BU MMS NXP semiconductors I2C-Bus Maximum Clock Speed Calculator Excel file of Calculator > Double click to open. If this is a PDF then go to URL
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p82b96
pca9600
i2c/pdf/pca9600
P82B715
/i2c/pdf/p82b715
100 kilo ohms resistor specifications
PCA96XX
PCA9306
69RC
BAT54A
LPC932
PCA9633
PCA9665
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SMC - SY5120
Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
Text: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based
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SY9000
SY3000
SY5000
SY7000
SMC - SY5120
SMC SY313
omron G71-OD16
SY7120
G71-OD16
SY340
431a1
diode sy
GVVZS3000-21A-2
19n marking 2 pin diode
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s 5225
Abstract: PIN laser DIODE 780nm 30mw
Text: LCQ78530S5-N/M/P AlGaAs Laser Diode Ver. 0 2004 ♦OVERVIEW LCQ78530S5-N/M/P is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It’s an attractive lig ht s ource, wit h a typic al light outp ut p ower of 3 0mW for ind ustrial o ptical m odule
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LCQ78530S5-N/M/P
LCQ78530S5-N/M/P
780nm
LCQ78530S5-N
LCQ78530S5-M
LCQ78530S5-P
lcq78530s5n
s 5225
PIN laser DIODE
780nm 30mw
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LCQ7853S5-M
Abstract: 780nm laser diode
Text: LCQ7853S5-N/M/P AlGaAs Laser Diode Ver.2 2004 ♦OVERVIEW LCQ7853S5-N/M/P is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 3mW for Laser Beam Printer, industrial optical module and sensor application
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LCQ7853S5-N/M/P
LCQ7853S5-N/M/P
780nm
LCQ7853S5-N
LCQ7853S5-M
LCQ7853S5-P
LCQ7853S5-M
780nm laser diode
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MOSFET 333
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UT4430 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UT4430 uses UTC advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for applications, such as high-side
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UT4430
UT4430
UT4430L-S08-R
UT4430G-S08-R
QW-R502-333
MOSFET 333
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LCD based digital alarm clock with digital thermometer
Abstract: atmega128 485 code example JFM24011-0101T full duplex max485 atmega128 USART C code examples ATMEGA128 projects MAX485 SMD wireless weather monitoring USING MICROCONTROLLER avr lcd 2x16 K6T1008
Text: Ethernet Minimodule User’s Manual REV 0.9 , lu ard ST Sta rve a , e o Ev B VR ers b S l d n io 1, A trol We mo t a ‘5 n d ni ri o e r c fo cro dd s M the e s d e i m mb oar rs, peC E B e S PI its ng roll gh r K pi nt Hi fo r y o rte tot roc FID ers s o c
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74HC00
JFM24011-0101T
25Mhz
MMnet101
LCD based digital alarm clock with digital thermometer
atmega128 485 code example
JFM24011-0101T
full duplex max485
atmega128 USART C code examples
ATMEGA128 projects
MAX485 SMD
wireless weather monitoring USING MICROCONTROLLER
avr lcd 2x16
K6T1008
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sy 320 diode
Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
Text: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren
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atheros
Abstract: transistor wes BUK436-100B c17f BUK436-100A
Text: PHILIPS INTERNATIONAL bSE D B 711DS2b DObHfl^b c17fl • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended tor use in
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7110fl2b
c17fl
BUK436-100A/B
BUK436
-100A
-100B
711002b
atheros
transistor wes
BUK436-100B
c17f
BUK436-100A
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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diode sy 162
Abstract: SC236D 6P14P diode sy SF 127 C GF147S 6D22S 6P45S ECC88 6n23p
Text: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN iR iU ii 1r a d i o - t e i e v i s l o n I SEITE JUNI 1 9 8 1 b 1 - 7 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S SERVICE-ANLEITUNG zum Translstor-Taschenempfänger "Signal 402"
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diode sy 180 10
Abstract: No abstract text available
Text: TOSHIBA TC74LVX240F/FW/FS TC74LVX244F/FW/FS Octal Bus Buffer TC74LVX240 Inverted, 3-State Outputs TC74LVX244 Mon-Inverted, 3-State Outputs The TC74LVX240 and 244 are high speed C M O S OCTAL BU S BUFFERS fabricated using silicon gate C 2M O S technol ogy.
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TC74LVX240F/FW/FS
TC74LVX244F/FW/FS
TC74LVX240
TC74LVX244
diode sy 180 10
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Untitled
Abstract: No abstract text available
Text: T C 7 4 L V Q 1 5 7 F / F N / F S QUAD 2 -CH AN N EL M ULTIPLEXER The T C 7 4 L V Q 1 5 7 is a high speed CM OS M U L T IP L E X E R fabricated with silicon gate and double - lay er m etal w iring C 2M O S technology. Designed for use in 3.3 V o lt system s, it ach ieves high speed
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TC74LVQ157F/FN/FS
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act11244
Abstract: 74AC11244N
Text: S ig n e tic s 7 4 A C /A C T 1 1244 O ctal Buffer/Line Driver; 3-State Product Specification ACL Products GENERAL INFORMATION FEATURES C O N D IT IO N S • Octal bus Interface SYM BOL • 3-State buffers UNIT A • Output capability: ± 24 mA • CMOS AC and TTL (ACT) voltage
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74AC/ACT11244
10MHz
act11244
74AC11244N
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VHC10F/FN/FS/FT TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC10F, TC74VHC10FN, TC74VHC10FS, TC74VHC10FT TRIPLE 3 -INPUT NAND GATE The TC74VHC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated w ith silicon gate C2MOS technology.
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TC74VHC10F/FN/FS/FT
TC74VHC10F,
TC74VHC10FN,
TC74VHC10FS,
TC74VHC10FT
TC74VHC10
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TD62000
Abstract: TD620003FB TD620004
Text: SILICON MONOLITHIC TD62003FB TD62004FB BIPO LAR DIGITAL INTEGRATED CIRCUIT 7CH DARLINGTON SINK DRIVER The TD62003FB series are high-voltage, high-current darlington drivers comprised of seven NPN darlington pairs. All units feature integral clamp diodes for switching
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TD62003FB
TD62004FB
500mA/ch
OP-16
TD62003FB
TD620003FB
TD620004FB
TD62000
TD620004
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lN4148
Abstract: DIODE LN4148 lN4744 Lloyd H. Dixon 2N3904 ND 24 volt output smps design
Text: \ dii' C 'h iM T V S o n i i i o i i d m t o r t o r p o r . i t i o n This application note describes the common post regulation methods used in power supply design and introduces the CS5101 Secondary Side Post Regulator Control IC. It also shows a detailed design example o f a dual output, current mode control, forward
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CS5101
CS3842A
P4845-ND
P4800-ND
P4806-ND
P4812-ND
P4814-ND
P4880-ND
lN4148
DIODE LN4148
lN4744
Lloyd H. Dixon
2N3904 ND
24 volt output smps design
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BC 148 TRANSISTOR
Abstract: transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung
Text: SE RV IC E-M ITTEILUN GEN television | VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN f a li | r a d i o - AUGUST 1981 8 SEITE 1-4 Beobachtungssohwerpunkte hinsichtlich der Brandgefahren bei den SU - Farbfernsehgeräten RADUGA 5BG, -706, -726 und -730 Eine Analyse der Brandursachen an o.g. Cerätetypen außer RADUGA
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61-cm-Ger
BC 148 TRANSISTOR
transistor BC-148
DIODE ga
transistor bc 148
bc 147 B transistor
service-mitteilungen
2GA113
"service-mitteilungen"
sc236c
RFT Service Mitteilung
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Transistor Bo 17
Abstract: BUK436-100A BUK436-100B
Text: PHILIPS INTERNATIONAL bSE D B 7110A2Li DOtiHaRb ^76 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK436-100A/B
-100A
-100B
Transistor Bo 17
BUK436-100A
BUK436-100B
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temic k 153 p
Abstract: Si994
Text: Tem ic AN710 S e m i c o n d u c t o r s High-Efficiency Buck Converter for Notebook Computers Robert Blattner Introduction Today, the u n teth erin g o f e lectro n ic e q u ip m en t has given rise to the n eed fo r lig h tw eig h t p o w er sources and p o w er
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AN710
temic k 153 p
Si994
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scr preregulator
Abstract: LM396 LT1038 LT1038CK lm396 high voltage regulator scr use in lead acid battery charger 12v transistor 1038 BATTERY CHARGER ACID
Text: rrurn. TECHNOLOGY LT1038 10 Amp Positive Adjustable Voltage Regulator F€flTUR€S D€SCRIPTIOn • Guaranteed 0.8% Initial Tolerance ■ Guaranteed 0.4% Load Regulation ■ Guaranteed 10 Amp Output Current ■ 100% Thermal Limit Burn-in ■ 24 Amp Transient Output Current
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LT1038
LT1038
LM117
LM138.
LM396.
V-25V
scr preregulator
LM396
LT1038CK
lm396 high voltage regulator
scr use in lead acid battery charger 12v
transistor 1038
BATTERY CHARGER ACID
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TRANSISTOR 132-gd
Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n
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06o3H
TRANSISTOR 132-gd
TRANSISTORS 132 GD
equivalent io transistor 131-G
bbc ds diodes DS 1,8
transistor vergleichsliste
aeg diode Si 61 L
AF124
Transistor Vergleichsliste DDR
OC1044
bbc ds diodes
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AX3002
Abstract: No abstract text available
Text: A N A LO G ► D E V IC E S High-Speed %CL> 10 Programmable Micropower Operational Amplifier OP-32 precision perform ance when the OP-32 is used with an unregulated battery or vehicular electrical system. FEA TU R ES • • Program m able Supply C u rre n t. 500nA to 2mA
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OP-32
OP-32
OP-32,
gain-of-100
15/nA
500kn
05kft
AX3002
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IS0103
Abstract: s7501
Text: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N « IS0103 Low-Cost, Internally Powered ISOLATION AMPLIFIER FEATURES APPLICATIONS • SIGNAL AND POWER IN ONE DOUBLE-WIDE 0.6” SIDE-BRAZED PACKAGE • MULTICHANNEL ISOLATED DATA
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IS0103
5600Vpk
1500Vrms
20kHz
4-20mA
S750-1
800kH
IS0103
s7501
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VEB mikroelektronik
Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Text: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP
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57AHNSDORP
VEB mikroelektronik
Mikroelektronik Information Applikation
mikroelektronik Heft 12
Radio Fernsehen Elektronik 1977 Heft 9
information applikation
information applikation mikroelektronik
mikroelektronik DDR
Halbleiterbauelemente DDR
aktive elektronische bauelemente ddr
mikroelektronik Heft
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