Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE SS100 Search Results

    DIODE SS100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SS100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCH3339

    Abstract: MCH5823 SS10015M
    Text: MCH5823 Ordering number : ENN7757 MCH5823 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a P-Channel Silicon MOSFET MCH3339 and a Schottky Barrier Diode (SS10015M)


    Original
    PDF MCH5823 ENN7757 MCH3339) SS10015M) MCH3339 MCH5823 SS10015M

    D1004

    Abstract: MCH3405 MCH5811 SS10015M
    Text: MCH5811 Ordering number : ENN8059 MCH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3405 and a schottky barrier diode (SS10015M)


    Original
    PDF MCH5811 ENN8059 MCH3405) SS10015M) D1004 MCH3405 MCH5811 SS10015M

    ss1001

    Abstract: MCH3445 MCH5812 SS10015M
    Text: MCH5812 Ordering number : ENN7998 MCH5812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3445 and a schottky barrier diode (SS10015M)


    Original
    PDF MCH5812 ENN7998 MCH3445) SS10015M) ss1001 MCH3445 MCH5812 SS10015M

    86886

    Abstract: diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001
    Text: CPH5846 Ordering number : EN8688 SANYO Semiconductors DATA SHEET CPH5846 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET MCH3309 and a Schottky Barrier Diode (SS10015M)


    Original
    PDF CPH5846 EN8688 MCH3309) SS10015M) 86886 diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001

    SS1001

    Abstract: ENA0781A MCH5837 SS10015M
    Text: MCH5837 Ordering number : ENA0781A SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M


    Original
    PDF MCH5837 ENA0781A SS10015M) A0781-6/6 SS1001 ENA0781A MCH5837 SS10015M

    SS1001

    Abstract: MCH5837 mosfet yb SS10015M TA72
    Text: MCH5837 Ordering number : ENA0781 SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M


    Original
    PDF MCH5837 ENA0781 SS10015M) A0781-6/6 SS1001 MCH5837 mosfet yb SS10015M TA72

    SS1001

    Abstract: MCH3307 MCH5836 SS10015M
    Text: MCH5836 Ordering number : ENA0780A SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)


    Original
    PDF MCH5836 ENA0780A MCH3307) SS10015M) PW10s, A0780-6/6 SS1001 MCH3307 MCH5836 SS10015M

    MCH3307

    Abstract: MCH5836 SS10015M
    Text: MCH5836 Ordering number : ENA0780 SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)


    Original
    PDF MCH5836 ENA0780 MCH3307) SS10015M) A0780-6/6 MCH3307 MCH5836 SS10015M

    SS10015M

    Abstract: VEC2820
    Text: VEC2820 Ordering number : ENA0849 SANYO Semiconductors DATA SHEET VEC2820 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET and a schottky barrier diode SS10015M contained in one


    Original
    PDF VEC2820 ENA0849 SS10015M) A0849-6/6 SS10015M VEC2820

    Untitled

    Abstract: No abstract text available
    Text: CPH5848 Ordering number : EN8690 SANYO Semiconductors DATA SHEET CPH5848 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Applications • DC / DC converters. Features • Composite type with a P-Channel Sillicon MOSFET MCH3306 and a Schottky Barrier Diode (SS10015M)


    Original
    PDF EN8690 CPH5848 MCH3306) SS10015M)

    SS1003M3

    Abstract: No abstract text available
    Text: SS1003M3 Ordering number : ENN8372 SS1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=0.35mA, VF max=0.43V).


    Original
    PDF SS1003M3 ENN8372 SS1003M3

    Untitled

    Abstract: No abstract text available
    Text: SS10015M Ordering number : ENN7979 Schottky Barrier Diode SS10015M 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.32V) (IF=0.5A, VF max=0.35V).


    Original
    PDF SS10015M ENN7979

    SS1003M3

    Abstract: No abstract text available
    Text: SS1003M3 Ordering number : EN8372A SANYO Semiconductors DATA SHEET SS1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=1.0A, VF max=0.43V).


    Original
    PDF SS1003M3 EN8372A SS1003M3

    "Marking SC"

    Abstract: SS1003M
    Text: SS1003M Ordering number : ENN8347 SS1003M Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small Switching noise. Low forward voltage(IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).


    Original
    PDF SS1003M ENN8347 500mA, "Marking SC" SS1003M

    ECSP1608-4

    Abstract: N3004 SS1003EJ
    Text: SS1003EJ Ordering number : EN8157A SANYO Semiconductors DATA SHEET SS1003EJ Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).


    Original
    PDF SS1003EJ EN8157A 500mA, ECSP1608-4 N3004 SS1003EJ

    ECSP1608-4

    Abstract: SB1003EJ SB1003M SS1003EJ SS1003M 16084 ecsp 1608-4 PACKAGE sanyo
    Text: PRODUCT INFORMATION Vol.180 PicoSBD One Ampere-Rated Two-Terminal Leadless Schottky Barrier Diode Series Developed New devices achieve the industry's highest rated current of 1 A in a 1608 size device SS1003EJ, SB1003EJ, SS1003M and SB1003M Overview The market for miniature portable equipment powered by rechargeable batteries, equipment such as


    Original
    PDF SS1003EJ, SB1003EJ, SS1003M SB1003M ECSP1608-4 SB1003EJ SB1003M SS1003EJ 16084 ecsp 1608-4 PACKAGE sanyo

    ss20 SOD-123F marking

    Abstract: SS20 SS80 RECTRON MARKING CODE FOR 2010
    Text: SS20L THRU SS100L SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage drop High current capability High speed switching High surge capabitity


    Original
    PDF SS20L SS100L OD-123FL ss20 SOD-123F marking SS20 SS80 RECTRON MARKING CODE FOR 2010

    ss129

    Abstract: SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR ss100 transistor SS125 q62702-s566 ss110 to-92 ss89 to-92 SS100 TO92 TRANSISTOR ss101
    Text: SIPMOS Small-Signal Transistor BSS 84 ● VDS − 50 V − 0.13 A ● ID ● RDS on 10 Ω ● VGS(th) − 0.8 … − 1.6 V ● P channel ● Enhancement mode ● Logic level Type Ordering Code Tape and Reel Information Pin Configuration Marking 1 2 3


    Original
    PDF Q62702-S568 E6327: Q67000-S243 E6433: OT-23 ss129 SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR ss100 transistor SS125 q62702-s566 ss110 to-92 ss89 to-92 SS100 TO92 TRANSISTOR ss101

    YDA153

    Abstract: YDA153-QZ WLCSP12 N1608ZP221T15 YDA153-PZ Maruwa qfn16 yamaha ic Yamaha YDA RB161VA-20
    Text: YDA153 D- 4H2 MONAURAL 2.6W Non-Clip DIGITAL AUDIO POWER AMPLIFIER •Overview YDA153 D-4H is a digital audio power amplifier IC with maximum output of 2.6W (RL=4Ω)x1ch. YDA153 has a “Pure Pulse Direct Speaker Drive Circuit” which directly drives speakers while reducing distortion of


    Original
    PDF YDA153 YDA153 QFN16 LSI-4DA153A30 WLCSP12 YDA153-QZ WLCSP12 N1608ZP221T15 YDA153-PZ Maruwa yamaha ic Yamaha YDA RB161VA-20

    TT2140

    Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
    Text: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage


    Original
    PDF EP106A O-220FI5H TT2140 transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140

    inverter in 12v DC to 220v AC 400w circuit diagrams

    Abstract: step down chopper tv tube charger circuit diagrams 220v 300w ac regulator circuit 2SC5707 equivalent RD2004 2sc6096 ech8 pattern 2sc5707 Flyback Transformers SANYO TV
    Text: Discrete Devices 2009-5 SANYO Discrete Devices SANYO's environmentally-considered discrete ECoP contributes to the realization of comfortable life in various aspects. Discrete devices and ExPDs power device are environmentally-considered products that well address the needs (small size, low profile, high efficiency & high reliability)


    Original
    PDF EP124A inverter in 12v DC to 220v AC 400w circuit diagrams step down chopper tv tube charger circuit diagrams 220v 300w ac regulator circuit 2SC5707 equivalent RD2004 2sc6096 ech8 pattern 2sc5707 Flyback Transformers SANYO TV

    Flyback Transformers SANYO TV

    Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
    Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)


    Original
    PDF CDMA2000] Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams

    Bluetooth Energy Meter ckt diagram

    Abstract: 94vo r29 Batteries Varta 500 rst 124 Touch pad synaptics Realistic sa-150 rotary encoder EC11 VT82C694X UB133X01 ALC200 humidity temperature sensor sh11
    Text: SERVICE MANUAL & TROUBLESHOOTING GUIDE FOR 7170 BY: Richard Wang TESTING TECHNOLOGY DEPARTMENT / TSSC JUL. 2001 7170 N/B MAINTENANCE CONTENTS 1. Hardware Engineering Specification- 3


    Original
    PDF FD501 FD504 FD502 FD503 Bluetooth Energy Meter ckt diagram 94vo r29 Batteries Varta 500 rst 124 Touch pad synaptics Realistic sa-150 rotary encoder EC11 VT82C694X UB133X01 ALC200 humidity temperature sensor sh11

    Untitled

    Abstract: No abstract text available
    Text: HD74LVG16240-16-bit Buffers I Line Drivers with 3-state Outputs Description The HD74LVC16240 has sixteen inverter drivers with three state outputs in a 48 pin package. This device is a inverting buffer and has two active low enables 1G to 4G . Each enable independently controls four


    OCR Scan
    PDF HD74LVG16240-------16-bit HD74LVC16240 HD74LVC1624Ö HD74LVC16240