Untitled
Abstract: No abstract text available
Text: PD -95659 IRL3202PbF l l l l l HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free D VDSS = 20V RDS on = 0.016Ω G Description These HEXFET Power MOSFETs were designed
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IRL3202PbF
O-220
cos37)
O-220AB.
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD -95659 IRL3202PbF l l l l l HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free D VDSS = 20V RDS on = 0.016Ω G Description These HEXFET Power MOSFETs were designed
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IRL3202PbF
O-220
O-220AB.
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD -95659 IRL3202PbF l l l l l HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free D VDSS = 20V RDS on = 0.016Ω G Description These HEXFET Power MOSFETs were designed
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IRL3202PbF
O-220
O-220AB
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22B4 diode ZENER
Abstract: smk 1350 transistor 88E1111 BCC package SIL1162 LS650 C3333 P33A zener DIODE 5c2 39C6 2N7002DW
Text: 8 6 7 2 3 4 5 1 CK APPD DRAWING 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN DATE 02 D PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
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MPC7447A
400PIN
LMC7211
NC7S32
MAX4172
TPS2211
FAN2558
MAX1772
MAX1717
22B4 diode ZENER
smk 1350 transistor
88E1111 BCC package
SIL1162
LS650
C3333
P33A
zener DIODE 5c2
39C6
2N7002DW
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Untitled
Abstract: No abstract text available
Text: PD - 95954 IRL3202SPbF Advanced Process Technology Surface Mount l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching l Lead-Free Description HEXFET Power MOSFET l D l VDSS = 20V RDS on = 0.016Ω G ID = 48A S These HEXFET Power MOSFETs were designed
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IRL3202SPbF
EIA-418.
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IRL3202
Abstract: No abstract text available
Text: PD 9.1695A IRL3202 PRELIMINARY HEXFET Power MOSFET l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.016W G Description These HEXFET Power MOSFETs were designed
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IRL3202
O-220
IRL3202
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AN-994
Abstract: IRL3202 Diode sm 63A
Text: PD - 95954 IRL3202SPbF Advanced Process Technology Surface Mount l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching l Lead-Free Description HEXFET Power MOSFET l D l VDSS = 20V RDS on = 0.016Ω G ID = 48A S These HEXFET Power MOSFETs were designed
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IRL3202SPbF
EIA-418.
AN-994
IRL3202
Diode sm 63A
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Untitled
Abstract: No abstract text available
Text: PD Inc LD PL63/65/67 Series Visible Laser Diode Modules PD-LD Inc. offers a variety of packaging options for its’ Visible Series of laser diodes. These units are available in ready-to-use, fiber-coupled packages, including FC, ST, and SC receptacles, as well as fiber- pigtailed
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PL63/65/67
630nm,
650nm
670nm.
200um
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IRL3202
Abstract: No abstract text available
Text: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-179-14 IRL3202 HEXFET TO-220 PD 9.1695A IRL3202 PRELIMINARY HEXFET Power MOSFET l l l l Advanced Process Technology
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IRL3202
O-220
IRL3202
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IRL3202
Abstract: No abstract text available
Text: PD 9.1695A IRL3202 PRELIMINARY HEXFET Power MOSFET l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.016W G Description These HEXFET Power MOSFETs were designed
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IRL3202
O-220
IRL3202
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AN-994
Abstract: IRL3202 IRL3202S
Text: PD 9.1675B IRL3202S PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.016W G Description ID = 48A S These HEXFET Power MOSFETs were designed
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1675B
IRL3202S
AN-994
IRL3202
IRL3202S
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IRL3202S
Abstract: AN-994 IRL3202
Text: PD 9.1675B IRL3202S PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.016W G Description ID = 48A S These HEXFET Power MOSFETs were designed
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1675B
IRL3202S
IRL3202S
AN-994
IRL3202
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NN12062A
Abstract: mn39620 140416 MN39620PQ MN103S5405YD MN103S5405
Text: High-performance mega-pixel series for digital still cameras. CCD Area Image Sensor MN39620PQ Overview MN39620PQ is a 1/2.5” CCD image sensor having 5.36 million pixels. Use of primary color RGB Bayer array onchip filter allows it to deliver superior color reproduction.
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MN39620PQ
MN39620PQ
200mV
NN12062A
mn39620
140416
MN103S5405YD
MN103S5405
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c6073
Abstract: C6074 C6091 C6089 1CA033 ar9103 SIL1178 NEC C3568 c6092 U2390
Text: 6 7 REV STD D CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM
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RP6152
RP6158
RP6159
RP6707
RP6708
RP6709
RP6710
RP6720
RP6721
RP6722
c6073
C6074
C6091
C6089
1CA033
ar9103
SIL1178
NEC C3568
c6092
U2390
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ar9350
Abstract: Apple 820-1881 p51 apple diode sot 143 s5 C7555 PP3V42G3H 101B SOT23-6 ah530 R7549 MLB-EVT
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M1 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE D DATE 428208PRODUCTION RELEASED 03/04/06
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ITP700FLEX
ar9350
Apple 820-1881
p51 apple
diode sot 143 s5
C7555
PP3V42G3H
101B SOT23-6
ah530
R7549
MLB-EVT
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lg66a
Abstract: e78996 india E78996 rectifier module IRFK6H450 hex-pak IRFK6J450
Text: Bulletin E27113 International S Rectifier IRFK6H450JRFK6J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.
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E27113
IRFK6H450
IRFK6J450
E78996.
O-240
CH-8032
IL60067.
NJ07650.
FL32743.
CA90245.
lg66a
e78996 india
E78996 rectifier module
hex-pak
IRFK6J450
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DIODE S4 5AA
Abstract: 5962-8971001XX S7B SMD TR plji S4 5AA S78 SMD ADG526A ADG527A DG526 DG527
Text: ANALOG DEVICES □ CMOS Latched 8/16 Channel Analog Multiplexers FEATURES 44V Supply M axim um Rating Vss to Voo Analog Signal Range Single/Dual Supply Specifications W ide Supply Ranges 10.8V to 16.5V Microprocessor Compatible (100ns WR Pulse) Extended Plastic Tem perature Range
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ADG526A/ADG527A
100ns
DG526
DG527
ADG526A
ADG527A
DIODE S4 5AA
5962-8971001XX
S7B SMD TR
plji
S4 5AA
S78 SMD
DG527
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f163a
Abstract: No abstract text available
Text: I R C H I L D S E M I C O N D U C T O R TM neously reset on the rising edge of the clock. The ’F161A and ’F163A are high-speed versions of th e ’F161 and ’F163. General Description Features • S ynchronous counting and loading ■ High-speed synchronous expansion
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74F161A
74F163A
F161A
F163A
odulo-16
74F163A
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Untitled
Abstract: No abstract text available
Text: PD 9.1675B International IOR Rectifier IRL3202S PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Optimized for 4.5V-7.0V Gate Drive • Ideal for CPU Core DC-DC Converters • Fast Switching V dss = 20 V RüS on = 0 .0 1 6£2
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1675B
IRL3202S
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F1S70N06
Abstract: 70n06 1S70N06 FP70N 10i5 rfg70n06 rf1s70n fp70n06
Text: i l i H jlp s e m ic o n d u c to r A R R RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM IS 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packages Features JE D E C STY LE TO -247 • 70A ,60V ' rDS(on = 0.014i2 • Temperature Compensated PSPICE Model
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RFG70N06,
RFP70N06,
RF1S70N06,
RF1S70N06SM
014i2
23e-3
29e-3
49e-7)
50e-7
84e-9
F1S70N06
70n06
1S70N06
FP70N
10i5
rfg70n06
rf1s70n
fp70n06
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TIC 106 PSPICE
Abstract: FP23N06L tic 263a FP23N06
Text: RFP23N06LE, RF1S23N06LE, RF1S23N06LESM HARRIS S E M I C O N D U C T O R 23A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packaging JE D E C T O -220A B • 23 A ,60V • rDS ON = 0.065i2
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RFP23N06LE,
RF1S23N06LE,
RF1S23N06LESM
-220A
065i2
-262A
99e-4
71e-12)
27e-2
73e-5)
TIC 106 PSPICE
FP23N06L
tic 263a
FP23N06
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SMD Capacitor ED 63A
Abstract: No abstract text available
Text: L I N Do c # ; 166 2 L X 1 6 6 2 /6 2 A , L X 1 6 6 3 /6 3 A S in gle-C hip P ro g ra m m a b le P W M C o n t r o lle r s w ith 5 - B i t TH I n f i n i t e P o w e r o f I n n o v a t i o n P r o d u c t i o n DESC R IPTIO N The L X 1 6 6 2 /6 2 A an d L X 1 6 6 3 /6 3 A are
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD6P4 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION The ¿¡PD6P4 is a m icrocontroller for infrared rem ote control transm itters w hich is provided with a one-tim e PROM as the program memory.
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11371E)
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M62C
Abstract: SN541000 61A hall celduc D91 relais reed celduc relay NAIS 5v 5 pin RELAIS REED d91 Celduc pla 100 R52C7 M61A
Text: c c id u c •SANCl R ELA IS ST' ÍIO U E 2 celduc Référence Forme du contact Entrefer Puiss. de coupure Courant maxi Tension maxi Tension claquage Résistance de contact Résistance d'isolem ent Plage de sensibilité N° Fiche Reference Contact form e Gap
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