Untitled
Abstract: No abstract text available
Text: SKKE 600F THYRISTOR BRIDGE,SCR,BRIDGE WXHY WXXY SJXYH Z =P@ % '40124C4 I0-C. 3 , )*+2*C)CB ):.,0+2)*5 W W SJ%W Z >O@ % 'B2*< ?[@¥ P@ AM¥ U( Z [P ]$5 ?Q@@ ?Q@@ Symbol Conditions SJ%W SJHY 2a+ SEMIPACK Fast Diode Modules SKKE 600F H^^N O@@J?Q Values Units
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40124C4
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RJL60S5DPP-E0
Abstract: RJL60S5 R07DS0819EJ0100
Text: Preliminary Datasheet RJL60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0819EJ0100 Rev.1.00 Feb 04, 2013 Features • Superjunction MOSFET Built-in fast recovery diode trr = 170 ns typ. at IF = 20 A, VGS = 0, diF/dt = 100 A/s, Ta = 25C
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RJL60S5DPP-E0
R07DS0819EJ0100
PRSS0003AG-A
O-220FP)
RJL60S5DPP-E0
RJL60S5
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RJL60S5
Abstract: No abstract text available
Text: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPE
R07DS0817EJ0001
PRSS0004AE-B
RJL60S5
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RJL60S5
Abstract: RJL60S5DPE
Text: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPE
R07DS0817EJ0001
PRSS0004AE-B
RJL60S5
RJL60S5DPE
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RJL60S5
Abstract: PRSS0004ZH-A fet 600V 20A RJL60S5DPK-M0
Text: Preliminary Datasheet RJL60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0818EJ0002 Rev.0.02 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPK-M0
R07DS0818EJ0002
PRSS0004ZH-A
RJL60S5
PRSS0004ZH-A
fet 600V 20A
RJL60S5DPK-M0
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RJL60S5
Abstract: R07DS0819EJ0001
Text: Preliminary Datasheet RJL60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0819EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPP-E0
R07DS0819EJ0001
PRSS0003AG-A
O-220FP)
RJL60S5
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RJL60S5
Abstract: No abstract text available
Text: Preliminary Datasheet RJL60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0818EJ0002 Rev.0.02 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPK-M0
R07DS0818EJ0002
PRSS0004ZH-A
RJL60S5
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ASM1442
Abstract: bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1
Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL
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BREMEN-15C/17C
BREMEN-15C/17C
BA41-xxxxxA
100nF
C1114
ASM1442
bd82hm55
SMSC mec1308
mec1308
Intel hm55
JLCD500
HM55 CRB
smsc mec1308-nu
LTST-C193TBKT-AC
N11X-GE1
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37 TV samsung lcd Schematic circuit diagram
Abstract: smd 475 20k 233 DIODE samsung lcd tv power supply schematic pcb circuit diagram of crt tv samsung BB509 ICSL6256 BA41-01039A schematic diagram crt tv samsung schematic Samsung TV led backlight AP4435
Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL
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BA41-01039A
BA41-01040A
BA41-01041A
BA41-01039A
/Users/mobile29/mentor/Bonn/BONN-INT
37 TV samsung lcd Schematic circuit diagram
smd 475 20k 233 DIODE
samsung lcd tv power supply schematic
pcb circuit diagram of crt tv samsung
BB509
ICSL6256
schematic diagram crt tv samsung
schematic Samsung TV led backlight
AP4435
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23K18
Abstract: MB91V460 UG 9C JP35 FR60 LQFP120 MB91460 VG96 91F465 MCU 101
Text: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910026-13 MB91460 SERIES EVALUATION BOARD SK-91465K-120PMT USER GUIDE SK-91465K-120PMT User Guide Revision History Revision History Date 2006/05/15 2006/11/01 2006/11/27 2007/03/02 2008/03/27 Issue V1.0, MH, First draft
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FMEMCU-UG-910026-13
MB91460
SK-91465K-120PMT
SK-91465K-120PMT
23K18
MB91V460
UG 9C
JP35
FR60
LQFP120
VG96
91F465
MCU 101
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MB91F464AAPMC
Abstract: MB91V460 FR60 LQFP100 MB91460 VG96 jumper 2 pin NQPACK100SD-ND
Text: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910025-15 MB91460 SERIES EVALUATION BOARD SK-91464A-100PMC USER GUIDE SK-91464A-100PMC User Guide Revision History Revision History Date 2006/02/15 2006/05/11 2006/08/08 2006/11/01 2006/11/27 2007/03/02
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FMEMCU-UG-910025-15
MB91460
SK-91464A-100PMC
SK-91464A-100PMC
applicablA-100PMC
MB91F464AAPMC
MB91V460
FR60
LQFP100
VG96
jumper 2 pin
NQPACK100SD-ND
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diode 1n4637
Abstract: in4632 zener diode in4560 1N41 IN4620 IN4550 IN4624 1n41113 1N4611A IN4619
Text: H H M M M H Z Z Z z z z A * A A A A 2 2 2 2 2 2 M H O M M M z z z A A A 0t W W CO SO 00 sj M H M z z z A A A 0> Ot Ot WWW 9 m A M M M z z z A A A 9 0 lO > CO CO Co W N h MMH* z z z A A A Oi 0 ) 01 co ro ro O lO 00 M z A 01 N) sj M z A 01 N) 01 M M M Z Z Z
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OCR Scan
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1N4549
1N4550
1N4551
1N4552
1N4553
1N4554
1N4555
1N4556
1N4557
1N4558
diode 1n4637
in4632
zener diode in4560
1N41
IN4620
IN4550
IN4624
1n41113
1N4611A
IN4619
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1N4637
Abstract: IN4620 IN4624 diode 1n4637 1N4639 1N4641 1N4632 1N4644 IN4636 IN4553
Text: H H M M M H Z Z Z z z z A * A A A A 2 2 2 2 2 2 M H O M M M z z z A A A 0t W W CO SO 00 sj M H M z z z A A A 0> Ot Ot WWW 9 m A M M M z z z A A A 9 0 lO > CO CO Co W N h MMH* z z z A A A Oi 0 ) 01 co ro ro O lO 00 M z A 01 N) sj M z A 01 N) 01 M M M Z Z Z
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1N4549
1N4550
1N4551
1N4552
1N4553
1N4554
1N4555
1N4556
1N4557
1N4558
1N4637
IN4620
IN4624
diode 1n4637
1N4639
1N4641
1N4632
1N4644
IN4636
IN4553
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in4632
Abstract: IN4619 50 watt zener diode 1n4549 14584 IN4575A 1N4549 1N4550 1N4551 1N4552 1N4553
Text: H H M M M H Z Z Z z z z A * A A A A 2 2 2 2 2 2 M H O M M M z z z A A A 0t W W CO SO 00 sj M H M z z z A A A 0> Ot Ot WWW 9 m A M M M z z z A A A 9 0 lO > CO CO Co W N h MMH* z z z A A A Oi 0 ) 01 co ro ro O lO 00 M z A 01 N) sj M z A 01 N) 01 M M M Z Z Z
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OCR Scan
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1N4549
1N4550
1N4551
1N4552
1N4553
1N4554
1N4555
1N4556
1N4557
1N4558
in4632
IN4619
50 watt zener diode 1n4549
14584
IN4575A
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in4783
Abstract: 1n47741 IN474 in4740 1N4833 1N4717 1N4728 1N4729 1N4730 1N4731
Text: ' Max. Zener Impedance @ In Ohms 0 6 001 001 SO'O 7 6 .0 69.0 5 8 .0 5 3 .0 4 9 .0 6 4 .0 4 5 .0 4 1 .0 3 7 .0 1 0 .0 1 4 .0 1 6 .0 4 5 .0 5 0 .0 6 0 .0 7 0 .0 8 0 .0 9 5 .0 1 1 0 .0 1 2 5 .0 1 5 0 .0 2 0 0 .0 01 0001 1 3 4 .0 3 1 .0 2 8 .0 2 5 .0 2 3 .0 2 1 .0
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1N47141231
1N47151231
1N4716123'
1N4717
1N4728
1N4729
1N4730
DO-41
1N4731
1N4732
in4783
1n47741
IN474
in4740
1N4833
1N4730
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zener diode 1N4747
Abstract: 1N4705 zener diode 1N4741 1N4717 1N4728 1N4729 zener IN4740 1N4731 1N4732 1N4733
Text: ' 1 Max. Zener Impedance @ In Ohms 06 001 001 SO'O 7 6 .0 69.0 6 4 .0 58.0 53.0 4 9.0 4 5.0 4 1.0 37.0 34.0 31.0 28.0 2 5.0 2 3.0 2 1.0 19.0 17.0 15.5 14.0 12.5 11.5 200.0 01 350.0 4 5.0 5 0.0 6 0.0 7 0.0 8 0.0 95.0 110.0 125.0 150.0 175.0 200 .0 2 50 .0 3 50 .0
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1N47141231
1N47151231
1N4716123'
1N4717
1N4728
1N4729
1N4730
DO-41
1N4731
1N4732
zener diode 1N4747
1N4705
zener diode 1N4741
zener IN4740
1N4733
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EN4175
Abstract: SB10-09P
Text: Ordering number: EN4175 SB10-09P No.4175 Schottky B arrier Diode SANNO i 90V, 1A Rectifier A pplications • High frequency rectification switching regulators, converters, choppers . F eatu re s • Low forward voltage (Vf max = 0.7V). • Fast reverse recovery time (trr max = 20ns).
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EN4175
SB10-09P
EN4175
SB10-09P
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in4740
Abstract: IN4770 1N4717 1N4728 1N4729 1N4730 1N4731 1N4732 1N4733 CHARACTERISTICS DIODE 1n4732
Text: ' SO'O 01 2 0 0 .0 I Zener Voltage Tolerance No Suffix = 1 0 % Suffix A — 5 % No Suffix = 1 0 % Suffix A - 5 % C Max. Zener Impedance @ In Ohms 0 6 001 001 7 6 .0 69.0 5 8 .0 5 3 .0 4 9 .0 6 4 .0 4 5 .0 4 1 .0 3 7 .0 1 0 .0 1 4 .0 1 6 .0 4 5 .0 5 0 .0 6 0 .0
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1N47141231
1N47151231
1N4716123'
1N4717
1N4728
1N4729
1N4730
DO-41
1N4731
1N4732
in4740
IN4770
1N4730
1N4733
CHARACTERISTICS DIODE 1n4732
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Untitled
Abstract: No abstract text available
Text: 2SJ229 LD L o w D rive S eries V Dss = 6 0 V 2085 P Channel Power M OSFET 3814 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C
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2SJ229
31893MH
A8-7975
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1N1743
Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:
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1N225
1N2260)
1N227
1N228
1N229
1N230O)
1N231d)
1N232
BZX83
BZX97
1N1743
IN5234
IN5008
1N4202
zener diode 1N PH 48
diode 1n1418
1NS232
zener diode c51 ph
1n587
1N4465
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Untitled
Abstract: No abstract text available
Text: January 1988 Semiconductor & MM54HC42/MM74HC42 BCD-to-Decimal Decoder General Description This decoder utilizes advanced silicon-gate CMOS technol ogy. Data on the four input pins select one of the 10 outputs corresponding to the value of the BCD number on the in
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MM54HC42/MM74HC42
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aks ti 79
Abstract: 4d759 AD7592D1 AD75100I AD7590DI AD7591DI AD7592DI
Text: A N A LO G DEVICES 01 CMOS Analog Switches with Data Latches AD7590DIAD 7591DIAD 7592DI FEATURES SCR Latch-Proof Ovarvoitaga-Proof: ±25V Low Ro n : M fttyp Buff«rad Switch Logic TTL, C M O S Cofnpatibt« MonoHthic D M K triM N y-lM taU d CM O S Pin CompatiMa wtth AD7510DI S«H m
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AD7590DI/AD7591DI/AD7592DI
AD75100I
AD7590D1,
AD7591DI
AD7592DI
AD7590DI
16-pin
AD769WI
aks ti 79
4d759
AD7592D1
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BUK481-100A
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'ìE D • 1^53^31 003D721 'ìlO M A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope suitable for surface mount applications.
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3D721
BUK481-100A
OT223
-ID/100
003072b
BUK481
-100A
OT223.
BUK481-100A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage ; v Uifi (sat) —°-ovuviaJi.;
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MG200Q1US51
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