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    RJL60S5

    Abstract: R07DS0819EJ0001
    Text: Preliminary Datasheet RJL60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0819EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


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    PDF RJL60S5DPP-E0 R07DS0819EJ0001 PRSS0003AG-A O-220FP) RJL60S5