SG DIODE
Abstract: diode sg-64 diode sg 71
Text: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1
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W83773G/SG
W83773G
W83773SG
SG DIODE
diode sg-64
diode sg 71
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ESM4045DV
Abstract: No abstract text available
Text: SG S-TH O M SO N ESM4045DV NPN DARLINGTON POWER MODULE . . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R,h JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
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ESM4045DV
ESM4045DV
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220v 25a diode bridge
Abstract: TSI62B5 220v 5a diode bridge TSI120 TSI200B5 TSI120B5 TSI150B5 TSI180B5 TSI270B5 sgs marking code
Text: [= 7 SG S-THO M SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION . CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 xs . VOLTAGE RANGE FROM 62V to 270V ■ Maximum current: lo = 0.5A
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10/700MS
TSI62B5
TSI120B5
TSI150B5
TSI180B5
TSI200B5
TSI270B5
TSI62
TSI120
TSI150
220v 25a diode bridge
220v 5a diode bridge
TSI270B5
sgs marking code
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220v 25a diode bridge
Abstract: No abstract text available
Text: rZ J SG S-THOM SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION ■ CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 jis . VOLTAGE RANGE FROM 120V to 270V ■ Maximum current : lo = 0.5
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SC-0351
Abstract: No abstract text available
Text: rrr “ 7# sg s -th o m s o n m m s x m iim m im m b u lth s d HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . NPN TRANSISTOR . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE • HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR
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BULT118D
SC-0351
SC-0351
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sgs25D
Abstract: No abstract text available
Text: 3ÜE V • TTE' ÌSB? D0 3GbS b T ■ r r 7 SGS-THOMSON ^ 7 # r IL U m « ! SG S25DA080D S G S-THOMSON NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS * LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING
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S25DA080D
O-240)
PC-029«
sgs25D
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S-40T
Abstract: SGS40TA045 SGS40
Text: 3DE D • 7^2^537 DG3GbS2 S ■ ' T ‘3>3' 5 fZ 7 SGS-THOMSON ^ 7# s SG S40T A 045D IL I « ! S G S-THQMSON NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS) . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING
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SC04520
O-240)
PC-029«
S-40T
SGS40TA045
SGS40
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239D
Abstract: diode sg
Text: SEC _ PRELIMINARY SPECIFICATION LIGHT EMITTING DIODE ELECTRON DEVICE SG 239D FASHION LAMP Green -N E P O C SERIES — DESCRIPTION The SG239D is a fu ll resin m olded LED lamp and has a rectangular fla t face w hich em its b rillia n t green lig h t u n ifo rm ly . It is
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SG239D
SR539D)
SV439D)
SG239D:
239D
diode sg
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diode sg 46
Abstract: SG DIODE MARKING diode sg 52 IGBT 2000V .50A
Text: £ ÿ j SG S-TH O M SO N n0 œ i l L I 0 ra [iïlBCi S T T A 5 1 2 D /F TURB O SW ITC H ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V (typ) 45ns (max) 2.0V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS
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STTA512D
ISOWATT220AC
STTA512F
diode sg 46
SG DIODE MARKING
diode sg 52
IGBT 2000V .50A
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SGS50DA045D
Abstract: SGS50DA lta 301 L-93S transpack transistor SGS50DA045 SGS50D
Text: 3QE f Z d 7 ^ 7 # S G m TTS'iaa? G03Dhba ^ b • S G S -T H O M S O N c lU O T * ! SG S50D A 045D S - TH OM SO N NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING
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G03Dhba
T0-240)
O-240)
PC-029«
SGS50DA045D
SGS50DA
lta 301
L-93S
transpack transistor
SGS50DA045
SGS50D
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0809 al
Abstract: HALF BRIDGE NPN DARLINGTON POWER MODULE SGS30D
Text: 30E D /= 7 m 7121237 DD3D7QÔ 3 • S G S -T H O M S O N li^lD gi i[L[i ¥[i®[MD(gi s 6 THOMSON SG S3 0 D B 045 D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA TION (2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE
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T-91-20
O-240)
PC-029«
0809 al
HALF BRIDGE NPN DARLINGTON POWER MODULE
SGS30D
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73b21
Abstract: No abstract text available
Text: r Z Z SG S -T H O M S O N • 7 f raooasiiLiieTr^omies S T T B 8 0 6 D l TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 8A V rrm 600V t r (typ) 50ns Vf (max) 1.3 V k- w - V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA
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T0220AC
STTB806D
STTB806DI
73b21
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diode sg 45
Abstract: STTB506B transistor 600v 500a SG-45 diode fast recovery diode 400v 5A power DIODES diode sg 5a 5a son
Text: f Z T SGS-THOMSON Ä T# RfflD g^(ô ILI ¥^@R3D(Si STTB506B(-TR) TURBOSWITCH " B " . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av) 5A V rrm 600 V 1.3V V f (max) tr r (typ) PRELIMINARY DATASHEET 45 ns FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:
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STTB506B
diode sg 45
transistor 600v 500a
SG-45 diode
fast recovery diode 400v 5A
power DIODES
diode sg 5a
5a son
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SGSP369
Abstract: diode sg 5 ts
Text: r= Z SG S-TtiO M SO N lüítlDffl lilLi ir[M!lD gi SGSP364 SGSP369 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS T YPE V DSS SGSP364 450 V 1.5 fi 5 A SGSP369 500 V 1.5 fi 5 A RDS(on Id • HIGH SPEED SW ITCHING APPLICATIO NS • HIGH VO LTAG E - FOR ELECTRO NIC LAM P
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SGSP364
SGSP369
SGSP369
diode sg 5 ts
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diode sg 36
Abstract: diode 400v 2A ultrafast STTB306B
Text: f Z T SGS-THOMSON Ä T# RfflD g^(ô ILI ¥^@R3D(Si STTB306B(-TR) TURBOSWITCH " B " . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av) 3A V rrm 600 V V f (max) 1.3V trr (typ) 45 ns PRELIMINARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS :
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STTB306B
diode sg 36
diode 400v 2A ultrafast
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Untitled
Abstract: No abstract text available
Text: C T S G S -T H O M S O N ^ 7# . HDlgœilLIgTOOIfSlDgi BAT 45 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage
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Untitled
Abstract: No abstract text available
Text: rz 7 Ä 7# S C S -T H O M S O N K [LKgraOßie! VN30N HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE VN30N V dss RDS on loUT Vcc 60 V 0.03 Q 45 A 26 V . OUTPUT CURRENT (CONTINUOUS): 45A @ Tc=25°C . 5V LOGIC LEVEL COMPATIBLE INPUT . THERMAL SHUT-DOWN
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VN30N
VN30N
P010D
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Untitled
Abstract: No abstract text available
Text: rz7 SGS-THOMSON ^7# MûœËŒOT «® STTB206S TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2A V rrm 600V trr (typ) 45ns Vf (max) PRELIMINARY DATASHEET 1.3V FEATURES AND BENEFITS • SPECIFIC TO ThE FOLLOWING OPEFtATIONS:
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STTB206S
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SGSP474
Abstract: No abstract text available
Text: r^ 7 S G S -T H O M S O N # » » H H H O T M lO Ê i SG SP474 SG SP475 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on *D SGSP474 SGSP475 450 V 400 V 0.7 fi 0.55 U 9 A 10 A • • • • HIGH SPEED SWITCHING APPLICATIONS HIGH VOLTAGE - FOR OFF-LINE SMPS
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SP474
SP475
SGSP474
SGSP475
100kHz
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SEMIKRON SKIIP 20 NAB 12 T 17
Abstract: semikron skiip 21 nab 12 T 31 semikron skiip 21 nab 063 T 40 Semikron skiip 31 nab 12 skiip 10 nab 063 T 10 Semikron skiip 31 nab 12 T 10 SKiiP 31 NAB 12 T 16 semikron skiip nab 06 semikron skiip 32 nab 12 semikron skiip 32 nab 12 t 7
Text: se MIKROn SKiiP SG NAB GB Absolute Maximum Ratings Symbol C onditions 1 Values Units T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C 6GG ± 2G S6 I 25 72 I 5G 57 I SS 114 I 76 V V A A A
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76A SOD
Abstract: No abstract text available
Text: r z 7 S G S -m 0 M S 0 N ^ 7 # iMneiioniugC T iH iM iio STTB 206S TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2A V rrm 600V trr (typ) 45ns V f (max) 1.3 V PRELIMINARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:
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0073blG
76A SOD
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON n0MilU10TI3 [fflnei STTB506B -TR TURBOSWITCH ”B” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 5A V rrm 600 V Vf trr (max) 1.3 V (typ) 45 ns P R ELIM IN ARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:
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n0MilU10TI3Â
STTB506B
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sod6 package
Abstract: ST microelectronics diodes
Text: rz7 SGS-THOMSON ^ 7# M ûœ ËŒ O T «® ST T B 106U TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 1A V rrm 600V trr (typ) 45ns Vf (max) PRELIMINARY DATASHEET 1.3V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS :
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Diode sg 9C
Abstract: mospet STK6875 hybrid ic pwm dc motor SG 6CA 24V DC motor for 24v for printer 24v dc motor drive circuit diagram hybrid ic pwm diode sg 8c 182cc
Text: Ordering number: EN 4554A Thick Film Hybrid 1C STK6875 No. 4554A Bidirectional DC Brush-type Motor Driver l0 max = 5A Overview Package Dimensions The STK6875 is a bridge-type power pack, bidirectional DC brush-type motor driver IC that incorporates Sanyo’s
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STK6875
STK6875
STK6860H
STK6875]
Diode sg 9C
mospet
hybrid ic pwm dc motor
SG 6CA
24V DC motor for 24v for printer
24v dc motor drive circuit diagram
hybrid ic pwm
diode sg 8c
182cc
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