EC35 TRANSFORMER
Abstract: SGSP369 Ferroxcube 3C8 HIGH FREQUENCY Transformer ec35 core ferroxcube Core Ferroxcube EC35-3C8 EC35 switching power AN-247 AN247 EC35-3c8
Text: APPLI CATION NO TE A 25W OFF-LINE FLYBACK SWITCHING REGULATOR INTRODUCTION This note describes a low cost switching power supply for applications requiring multiple output voltages, e.g. personal computers, instruments, etc. The discontinuous mode flyback regulator used in
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UC1842
EC35 TRANSFORMER
SGSP369
Ferroxcube 3C8
HIGH FREQUENCY Transformer ec35
core ferroxcube
Core Ferroxcube EC35-3C8
EC35 switching power
AN-247
AN247
EC35-3c8
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EC35 TRANSFORMER
Abstract: Ferroxcube 3C8 SGSP369 EC35-3c8 HIGH FREQUENCY Transformer ec35 core 3c8 flyback, discontinuous mode ferroxcube toroid core ferroxcube 204T50-3C8
Text: APPLICATION NOTE A 25W OFF-LINE FLYBACK SWITCHING REGULATOR INTRODUCTION This note describes a low cost switching power supply for applications requiring multiple output voltages, e.g. personal computers, instruments, etc. The discontinuous mode flyback regulator used in
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UC1842
EC35 TRANSFORMER
Ferroxcube 3C8
SGSP369
EC35-3c8
HIGH FREQUENCY Transformer ec35
core 3c8
flyback, discontinuous mode
ferroxcube toroid
core ferroxcube
204T50-3C8
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SGSP369
Abstract: SGSP364
Text: SGSP364 SGSP369 /= 7 SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on *D SGSP364 SGSP369 450 V 500 V 1.5 fl 1.5 ß 5 A 5 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - FOR ELECTRONIC LAMP BALLAST • ULTRA FAST SWITCHING
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SGSP364
SGSP369
SGSP369
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SGSP369
Abstract: diode sg 5 ts
Text: r= Z SG S-TtiO M SO N lüítlDffl lilLi ir[M!lD gi SGSP364 SGSP369 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS T YPE V DSS SGSP364 450 V 1.5 fi 5 A SGSP369 500 V 1.5 fi 5 A RDS(on Id • HIGH SPEED SW ITCHING APPLICATIO NS • HIGH VO LTAG E - FOR ELECTRO NIC LAM P
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SGSP364
SGSP369
SGSP369
diode sg 5 ts
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SGSP369
Abstract: No abstract text available
Text: 30E D • 7^5^537 SGS-THOMSON ■[LKêTOiDÊS 003QQ05 s - S ■ T - 3 CI - 1 3 SGSP364 ” SGSP369 t h o m s o n N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP364 SGSP369 VDss 450 V 500 V f*DS on 1.5 Í2 1.5 n 5 A 5 A • HIGH SPEED SWITCHING APPLICATIONS
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003QQ05
SGSP364
SGSP369
SGSP364
SGSP369
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ISOWATT220
Abstract: No abstract text available
Text: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30
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O-220
ISOWATT220
ISOWATT22Q
STH107N50
STH10N50
STHI10N50
STHI10N50FI
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sgs*P381
Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177
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P-220
ISOWATT220
O-220
O-220
STHI07N50
STHI07N50FI
STHI10N50
STHI10N50FI
sgs*P381
ISOWATT218 IGBT
STLT20
MTP3055AFI
SGSP381
IRFP453FI
SGSP579
SGSP591
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SGSP369
Abstract: No abstract text available
Text: SGS-THOMSON ^ T # tm [f^ D [^ Ô i[L i(§ T r ^ (Ô )R { ]D © S T E C H N IC A L N O T E STUDY OF A MODEL FOR POWER MOSFET GATE-CHARGE INTRODUCTION The increasing interest in POWER MOSFET devi ces is due especially to their ability to switch po wer at high frequencies and the simple drive
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substitu bipolar transistors
Abstract: No abstract text available
Text: iC T SCS-THOMSON * 7 #. 68S0 gC? liLS TO©raO©S TECHNICAL NOTE POWER MOS IN SWITCHING AN EVALUATION METHOD AND A PRACTICAL EXAMPLE INTRODUCTION POWER MOS are used in switch mode power sup plies. H.F. welding systems, industrial ovens, re lay drivers and other similar applications. These
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IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
IRF722P
IRF732P
SGSP3055
IRF730P
1rfp450
IRF510
SGSP312
IRF540FI
irf522p
MTP20N10
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mos Turn-off Thyristor
Abstract: SiC BJT pnp transistor 1000v BJT Gate Drive circuit fast thyristor 1000V MOS Controlled Thyristor
Text: rZ J SCS-THOMSON ~7w m R 0 [H ]© i[L i© U É © M D © S t e c h n ic a l n o te AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS High Injection MOS devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
TP8N10
th15n20
TH7N50
TP4N10
TP10N05
IRFP350FI
TP5N35
tp5n40
TP4N45
TP3N40
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ISOWATT220
Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
Text: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00
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STHI07N50
STHI07N50FI
STHI10N50
STHI10N50FI
O-220
ISOWATT22Û
ISOWATT22Q
ISOWATT220
MTP3055AFI
IRF722FI
IRFP453FI
SGSP579
SGSP591
SGS35MA050D1
SGSP382
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sgs*P381
Abstract: ISS 355 IRFp150 To3 package IRFP350FI MTP3055AFI SGSP591 SGSP239
Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ^ BR DSS (V ) 50 100 450 500 R DS(on) (max) 3 Type •d (A ) (12) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 TO-220 R DS(on) V(BR)DSS (V) 50 50 50 50 50 50 50 50 50 50 50 50 50 50
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OT-82
OT-194
SGSP222
SGSP201
SGSP230
SGSP239
O-220
SGSP358
MTP15N05L
STLT19
sgs*P381
ISS 355
IRFp150 To3 package
IRFP350FI
MTP3055AFI
SGSP591
SGSP239
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DSS89
Abstract: No abstract text available
Text: r=J SGS-THOMSON Mm TECHNICAL NOTE STUDY OF A MODEL FOR POWER MOSFET GATE-CHARGE INTRODUCTION The increasing interest in POWER MOSFET devi ces is due especially to their ability to switch po wer at high frequencies and the simple drive requirements needed to achieve this.
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sgsp311
Abstract: substitu bipolar transistors sgsp331 sgsp531 10a 400v bipolar transistor
Text: r z 7 ^ 7 § S G S - m o M S O N M g [M & (I(g T[M iiO (gS TECHNICAL NOTE POWER MOS IN SWITCHING AN EVALUATION METHOD AND A PRACTICAL EXAMPLE INTRODUCTION POWER MOS are used in switch mode power sup plies. H.F. welding systems, industrial ovens, re lay drivers and other similar applications. These
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ISOWATT-220
Abstract: mtp15n05 BU210A ISOWATT220
Text: SELECTION GUIDE BY VOLTAGE V BR DSS (V) R DS(on) (max) (0) g •d (A) 50 50 50 50 50 0.30 0.15 0.15 0.15 0.15 3.50 7.50 7.50 7.50 7.50 50 50 50 50 50 0.13 0.13 0.12 0.12 0.12 5.00 8.00 10.00 9.00 9.00 50 50 50 50 50 0.12 0.10 0.10 0.10 0.10 9.00 9.00 9.00
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O-220
ISOWATT220
ISOWATT220
STH107N50
STH10N50
STHI10N50
STHI10N50FI
ISOWATT-220
mtp15n05
BU210A
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sgs*P381
Abstract: IRFp150 To3 package bu245a BR 1300
Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) *D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50
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OT-82
OT-194
SGSP222
SGSP201
SGSP230
SGSP239
O-220
SGSP358
MTP15N05L
STLT19
sgs*P381
IRFp150 To3 package
bu245a
BR 1300
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SGSP369
Abstract: TSD4M450V SGSP479 IRFP450fi IRF840FI sgsp579 SGSP239 SGSP364 SGSP474 MTP3N6
Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL POWER MOS V BR DSS RDS(on) max (V) <n> >d Package Type (A) •d max ptot Sfs min Ciss max (A) (W) (mho) (pF) 450 450 450 450 450 1.5 1.5 1.5 1.1 1.1 2.5 2.5 2.5 4.4 4.4 TO 220 ISOWATT 220 TO 220 TO 220 ISOWATT 220
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IRF831
IRF831FI
SGSP364
IRF843
IRF843FI
IRF841
IRF841FI
SGSP474
SGSP574
IRF453
SGSP369
TSD4M450V
SGSP479
IRFP450fi
IRF840FI
sgsp579
SGSP239
MTP3N6
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TSD4M450V
Abstract: SGSP479 SGSP239 tsd4m45 IRF840FI SGSP369 SGSP474 STHV82 TSD4M250V TSD4M351V
Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL POWER MOS V BR DSS RDS(on) max (V) <n> 450 450 450 450 450 450 450 450 450 450 450 450 450 450 450 450 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500
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IRF831
IRF831FI
SGSP364
IRF843
IRF843FI
IRF841
IRF841FI
SGSP474
SGSP574
IRF453
TSD4M450V
SGSP479
SGSP239
tsd4m45
IRF840FI
SGSP369
STHV82
TSD4M250V
TSD4M351V
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pnp transistor 1000v
Abstract: mos Turn-off Thyristor applications of mos controlled thyristor 1000V 2A BJT SGSP363
Text: n ^ rz 7 # , S G S -T H O M S O N 5 [L [I T [H ] M D © Ì T E C H N IC A L N O TE AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS (High Injection MOS) devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4HARRIS
equivalent data book of 10N60 mosfet
MC14016CP
GD4511
an-6466
CX 2859 SMD
74AC14 spice
6120* harris
HCF4018be
7028 SMD Transistor
spice irfbc40
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbS3131
BLU52
1N321
BYW56
1N321A
BLV97
1N322
TXD10K40
TXD10K60
BT1690
BT808
1N5004
TXD10H60
mp8706
TXC10K40
BSTC1026
BT13G
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