Untitled
Abstract: No abstract text available
Text: PoE Ideal Diode Bridge PoE Data Pairs ±VIN1 EN + VOUT LT4321 – EN To PoE PD Controller PoE Spare ±VIN2 Pairs Active Diode Bridge Controller Minimizes Power Loss and Heat in Power over Ethernet Powered Device The LT 4321 ideal diode bridge controller replaces two diode bridge rectifiers with low loss N-channel MOSFET bridges to increase
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LT4321
LT4321
350mA
600mA
LT4275
com/4321
1-800-4-LINEAR
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RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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4321F
Abstract: TG12 LT432
Text: LT4321 PoE Ideal Diode Bridge Controller Features Description n n n The LT 4321 is a dual ideal diode bridge controller that enables a Power over Ethernet PoE powered device (PD) to receive power in either voltage polarity from RJ-45 data pairs, spare pairs, or both. The LT4321 and
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LT4321
RJ-45
LT4321
LTC4355
LTC4359
LTC4290/LTC4271
4321f
com/LT4321
4321F
TG12
LT432
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DI108S
Abstract: SK5100 CP2506 sb5200 SB840
Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose
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38x45Â
DI108S
SK5100
CP2506
sb5200
SB840
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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S2M diode
Abstract: diode s2m S2A diode
Text: S2A – S2M WTE POWER SEMICONDUCTORS Pb 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 60A Peak Low Power Loss
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SMB/DO-214AA
SMB/DO-214AA,
MIL-STD-750,
S2M diode
diode s2m
S2A diode
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S2GAT
Abstract: No abstract text available
Text: S2AA – S2MA WTE POWER SEMICONDUCTORS Pb 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 60A Peak Low Power Loss
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SMA/DO-214AC
SMA/DO-214AC,
MIL-STD-750,
S2GAT
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Untitled
Abstract: No abstract text available
Text: S2A THRU S2M SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES SMB/DO-214AA l For surface mounted applications l High temperature metallurgically bonded-no compression contacts as found in other l diode-constructed rectifiers
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SMB/DO-214AA
DO-214AA
MIL-STD-750,
EIA-481)
013mm)
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB1045
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mur1650
T4 SOD-123 1N4004
MR2510
1N2069
SES5001
mur420 equivalent
CT PR1504
equivalent for fr302 diode
mur 460 switch
diode A14A surface mount
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
FE16B
mbr3045pt transistor
FR102 SOD-123
1N4007 sod-123
BYV43-45
BYV19-45
MUR1660CT equivalent
MUR460 BL
FEP16DT 0032
mur420 equivalent
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DIODE SOT-23 PACKAGE
Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package
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OT-23
LL4148
DL4148
500mW
LL4448
DL4448
OT-23
Part54G
DBS155G
DIODE SOT-23 PACKAGE
dbs107
mmbd2836
Bridge rectifier DF08
s1g 28 diode
BAS21
DL4148
LL4148
LL4448
MMBD1402
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1100C
Abstract: 2600C
Text: S2A thru S2M SERIES CHENG- YI SURFACE MOUNT RECTIFIER ELECTRONIC VOLTAGE RANGE 50 TO 1000 Volts CURRENT 2.0 Amperes SMB/DO-214AA FEATURES For surface mounted applications High tempreature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers
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SMB/DO-214AA
2600C
DO-214AA
20in2
013mm)
1100C
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AN7254
Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370
Text: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 5 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models
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ITF86116SQT
AN7254
AN7260
ITF86116SQT
ITF86116SQT2
TB370
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Untitled
Abstract: No abstract text available
Text: S2AA – S2MA 2.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak
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SMA/DO-214AC,
MIL-STD-750,
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IRF540N
Abstract: MOSFET IRF540n huf76639p3 HRF3205 equivalent HUF75623P3 ITF87056DQT huf75339 RF1K49093 HRF3205 HRFZ44N
Text: Power MOSFET SPICE and Thermal Models TM Features • • • • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents Package Inductances Gate Source Resistance Third Quadrant Diode Operation
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HRF3205
HRF3205S
HRFZ44N
HUF75307D3
HUF75307D3S
HUF75307P3
HUF75307T3ST
HUF75309D3
HUF75309D3S
HUF75309P3
IRF540N
MOSFET IRF540n
huf76639p3
HRF3205 equivalent
HUF75623P3
ITF87056DQT
huf75339
RF1K49093
HRF3205
HRFZ44N
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Untitled
Abstract: No abstract text available
Text: ITF86116SQT TM Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode
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ITF86116SQT
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UJT 2N2646
Abstract: 2N2646 pin diagram UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 pin diagram of UJT-2N2646 GE Transient Voltage Suppression Manual UJT THEORY AND CHARACTERISTICS 957B MDA2500 pn junction DIODE 1N4001
Text: TVS/Zener Theory and Design Considerations Handbook HBD854/D Rev. 0, Jun−2005 SCILLC, 2005 Previous Edition © 2001 as Excerpted from DL150/D “All Rights Reserved’’ http://onsemi.com 1 Technical Information, Application Notes and Articles Zener Diode Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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HBD854/D
Jun-2005
DL150/D
NLAS3158/D
UJT 2N2646
2N2646 pin diagram
UJT-2N2646 PIN DIAGRAM DETAILS
UJT pin diagram 2N2646
pin diagram of UJT-2N2646
GE Transient Voltage Suppression Manual
UJT THEORY AND CHARACTERISTICS
957B
MDA2500
pn junction DIODE 1N4001
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AN7254
Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 MO-153AA
Text: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models
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ITF86116SQT
AN7254
AN7260
ITF86116SQT
ITF86116SQT2
TB370
MO-153AA
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AN7254
Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 86116
Text: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.2 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models
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ITF86116SQT
8611ements
AN7254
AN7260
ITF86116SQT
ITF86116SQT2
TB370
86116
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PK MUR 460
Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR340
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
PK MUR 460
pk mur460
PK MUR460 1110
gi756 diode
carrier 30bq015
USD1120
0525 Transient Voltage Suppressors
diode A14A surface
SS14 SOD123
MBRD360
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MI303
Abstract: 1773M 4B2 diode 7L03 db 411 antenna
Text: bSMTöES 0017732 LTT • ANTENNA SWITCH MI303 PIN DIODE R F POW ER SWITCHING DESCRIPTION The MI303 PIN diode is employing high reliability glass construction, designed for solid state antenna switches in commercial two-way radios. FEA TU RES • Low insertion loss
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MI303
MI303
230nH
144MHz
50MHz
440MHz
80dBc
1773M
4B2 diode
7L03
db 411 antenna
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Untitled
Abstract: No abstract text available
Text: 4bêfc>S2b OOOlbfi^ AMO H I X Y nixYs If i i 700 900 1300 1500 1700 > > > < < < Thyristor Modules Thyristor/Diode Modules 600 800 1200 1400 1600 MCC250 iTAV= 2 x 287 a MCD250 VRRM= 600-1600 V T ype Version 1 Version 1 M CC250*06io1 M CC250-08ÌO1 MCC2S0-121O1
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OCR Scan
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MCC250
MCD250
CC250
06io1
CC250-08Ã
MCC2S0-121O1
CC250-14Ã
CC250-16io1
MCD250-06k
MCD250-08JO1
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Untitled
Abstract: No abstract text available
Text: S2A THRU S2M TRANSYS SURFACE MOUNT RECTIFIER ELECTRONICS VOLTAGE - 50 to 1000 Volts LIMITED FEATURES CURRENT - 2.0 Amperes SMB/DO-214AA For surface mounted applications High temperature meta urgica y bonded-no compression contacts as found in other diode-constructed rectifiers
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OCR Scan
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PDF
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DO-214AA
MIL-STD-750,
EIA-481)
SMB/DQ-214AA
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