C67078-S1308-A2
Abstract: BUZ21
Text: BUZ 21 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 21 100 V 21 A 0.085 Ω TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1308-A2
C67078-S1308-A2
BUZ21
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C67078-S1308-A2
Abstract: BUZ21
Text: BUZ 21 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 2 Pin 1 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 21 100 V 21 A 0.085 Ω TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1308-A2
C67078-S1308-A2
BUZ21
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E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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s1308 diode
Abstract: diode s1308 S1308
Text: MMSF1308 Preferred Device Power MOSFET 7 Amps, 30 Volts N−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source
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MMSF1308
MMSF1308/D
s1308 diode
diode s1308
S1308
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s1308 diode
Abstract: S1308 diode s1308 MMSF1308R2 motorola an569 thermal AN569 MMSF1308 SMD310
Text: MOTOROLA Order this document by MMSF1308/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMSF1308 Low Power Surface Mount Products Single N-Channel MiniMOS Field Effect Transistor MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These
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MMSF1308/D
MMSF1308
s1308 diode
S1308
diode s1308
MMSF1308R2
motorola an569 thermal
AN569
MMSF1308
SMD310
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s1308 diode
Abstract: diode s1308 S1308 AN569 MMSF1308 MMSF1308R2
Text: MMSF1308 Preferred Device Power MOSFET 7 Amps, 30 Volts N–Channel SO–8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source
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MMSF1308
r14525
MMSF1308/D
s1308 diode
diode s1308
S1308
AN569
MMSF1308
MMSF1308R2
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Untitled
Abstract: No abstract text available
Text: SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 40 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 • TrenchFET® Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested
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SiR640DP
SiR640DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiR870ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0066 at VGS = 10 V 60 0.0070 at VGS = 7.5 V 60 0.0105 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 25.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Fixed Telecom
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SiR870ADP
SiR870ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00100 at VGS = 10 V 100 0.00135 at VGS = 4.5 V 100 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification
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SiRA00DP
SiRA00DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiR846ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0078 at VGS = 10 V 60 VDS (V) 100 0.0085 at VGS = 7.5 V 60 0.0095 at VGS = 6 V 60 Qg (Typ.) 26.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Primary Side Switch
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SiR846ADP
SiR846ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiR870ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0066 at VGS = 10 V 60 0.0070 at VGS = 7.5 V 60 0.0105 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 25.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Fixed Telecom
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PDF
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SiR870ADP
SiR870ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiR846ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0078 at VGS = 10 V 60 VDS (V) 100 0.0085 at VGS = 7.5 V 60 0.0095 at VGS = 6 V 60 Qg (Typ.) 26.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Primary Side Switch
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PDF
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SiR846ADP
SiR846ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00100 at VGS = 10 V 100 0.00135 at VGS = 4.5 V 100 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification
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SiRA00DP
SiRA00DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQD50N10-8m9L www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualified 100 RDS(on) () at VGS = 10 V 0.0089
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SQD50N10-8m9L
AEC-Q101
O-252
SQD50N10-8m9L-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd
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SQP60N06-15
AEC-Q101
O-220AB
O-220
SQP60N06-15-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQD50N10-8m9L www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualified 100 RDS(on) () at VGS = 10 V 0.0089
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SQD50N10-8m9L
AEC-Q101
O-252
SQD50N10-8m9L-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQD50N10-8m9L www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualified 100 RDS(on) () at VGS = 10 V 0.0089
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SQD50N10-8m9L
AEC-Q101
O-252
SQD50N10-8m9L-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd
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SQP60N06-15
AEC-Q101
O-220AB
O-220
SQP60N06-15-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQ4284EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 40 RDS(on) () at VGS = 10 V 0.0135 RDS(on) () at VGS = 4.5 V 0.0148 ID (A) 8 Configuration Dual D1 SO-8 S1 1
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SQ4284EY
AEC-Q101
SQ4284EY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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BUZ21
Abstract: No abstract text available
Text: SIEMENS BUZ 21 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 21 Vbs 100 V b ^DSiort Package Ordering Code 21 A 0.085 Q TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current h Values
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O-220
C67078-S1308-A2
BUZ21
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Untitled
Abstract: No abstract text available
Text: BUZ 21 Infineon •chnologiês SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b f f DS(on Package BUZ 21 100 V 21 A 0.085 Q TO-220 AB ’ Ordering Code C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1308-A2
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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BUZ21
Abstract: sis8
Text: SIEM ENS BUZ 21 SIPMOS Power Transistor • • • N channel Enhancem ent mode Avalanche-rated Type Vps A ^DS on) Package 1> Ordering Code BUZ 21 100 V 21 A 0.085 £2 TO -220 AB C67078-S1308-A2 M axim um Ratings Param eter Continuous drain current, Tc = 25 'C
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C67078-S1308-A2
BUZ21
sis8
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s1308 diode
Abstract: S1308 diode s1308
Text: MOTOROLA Order this document by MMSF1308/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMSF1308 Low Power Surface Mount Products Motorola Preferred Device Single N-Channel MiniMOS Field Effect Transistor SINGLE TMOS POWER MOSFET 7 AMPERES 30 VOLTS
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OCR Scan
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PDF
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MMSF1308/D
MMSF1308
s1308 diode
S1308
diode s1308
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s1308 diode
Abstract: diode s1308
Text: MOTOROLA Order this document by MMSF1308/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMSF1308 Low Power Surface Mount Products Motorola Preferred Device Single N-Channel MiniMOS™ Field Effect Transistor MiniMOS™ devices are an advanced series of power MOSFETs
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OCR Scan
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PDF
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MMSF1308/D
MMSF1308
s1308 diode
diode s1308
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