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    SIS8 Price and Stock

    Vishay Siliconix SIS890DN-T1-GE3

    MOSFET N-CH 100V 30A PPAK1212-8
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    DigiKey SIS890DN-T1-GE3 Reel 30,000 3,000
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    SIS890DN-T1-GE3 Cut Tape 1,245 1
    • 1 $1.35
    • 10 $1.104
    • 100 $0.859
    • 1000 $0.59312
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    SIS890DN-T1-GE3 Digi-Reel 1
    • 1 $1.35
    • 10 $1.104
    • 100 $0.859
    • 1000 $0.59312
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    Vishay Siliconix SIS862ADN-T1-GE3

    MOSFET N-CH 60V 15.8A/52A PPAK
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    DigiKey SIS862ADN-T1-GE3 Reel 15,000 3,000
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    SIS862ADN-T1-GE3 Cut Tape 1,786 1
    • 1 $0.93
    • 10 $0.809
    • 100 $0.5602
    • 1000 $0.39834
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    SIS862ADN-T1-GE3 Digi-Reel 1
    • 1 $0.93
    • 10 $0.809
    • 100 $0.5602
    • 1000 $0.39834
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    New Advantage Corporation SIS862ADN-T1-GE3 6,000 1
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    Vishay Siliconix SIS892ADN-T1-GE3

    MOSFET N-CH 100V 28A PPAK1212-8
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    DigiKey SIS892ADN-T1-GE3 Reel 15,000 3,000
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    SIS892ADN-T1-GE3 Cut Tape 1,480 1
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    • 10 $0.845
    • 100 $0.6575
    • 1000 $0.454
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    Vishay Siliconix SIS892DN-T1-GE3

    MOSFET N-CH 100V 30A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIS892DN-T1-GE3 Reel 6,000 3,000
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    SIS892DN-T1-GE3 Cut Tape 753 1
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    • 10 $1.254
    • 100 $0.9757
    • 1000 $0.67367
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    New Advantage Corporation SIS892DN-T1-GE3 6,000 1
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    • 1000 $1.01
    • 10000 $0.94
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    Vishay Siliconix SIS890ADN-T1-GE3

    MOSFET N-CH 100V 7.6A/24.7A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIS890ADN-T1-GE3 Reel 5,190 3,000
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    SIS890ADN-T1-GE3 Cut Tape 365 1
    • 1 $0.92
    • 10 $0.795
    • 100 $0.5504
    • 1000 $0.3914
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    Find more SIS8 price and stock on Findchips.com

    SIS8 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIS811 Xinwang Electronics SMT Power Inductor Original PDF
    SIS822DNT-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 12A POWERPAK1212 Original PDF
    SIS83 Xinwang Electronics SMT Power Inductor Original PDF
    SIS85 Unknown SMT Power Inductor Original PDF
    SIS85 Xinwang Electronics SMT Power Inductor Original PDF
    SIS85-100 Unknown SMT Power Inductor Original PDF
    SIS85-101 Unknown SMT Power Inductor Original PDF
    SIS85-102 Unknown SMT Power Inductor Original PDF
    SIS85-150 Unknown SMT Power Inductor Original PDF
    SIS85-151 Unknown SMT Power Inductor Original PDF
    SIS85-1R0 Unknown SMT Power Inductor Original PDF
    SIS85-1R5 Unknown SMT Power Inductor Original PDF
    SIS85-220 Unknown SMT Power Inductor Original PDF
    SIS85-221 Unknown SMT Power Inductor Original PDF
    SIS85-2R2 Unknown SMT Power Inductor Original PDF
    SIS85-330 Unknown SMT Power Inductor Original PDF
    SIS85-331 Unknown SMT Power Inductor Original PDF
    SIS85-3R3 Unknown SMT Power Inductor Original PDF
    SIS85-470 Unknown SMT Power Inductor Original PDF
    SIS85-471 Unknown SMT Power Inductor Original PDF

    SIS8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (MAX.) ID (A)f 0.058 at VGS = 10 V 20.2 0.085 at VGS = 7.5 V 16.6 VDS (V) 150 • ThunderFET technology optimizes balance of RDS(on), Qg, Qsw and Qoss


    Original     		PDF SiS888DN 1212-8S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    inductor 221

    Abstract: SIS811
    Text: SMT Power Inductor SIS811 Type Features High current 3.5A, 10uH type. Unshielded. Self-leads ,suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter, DC-AC inverters


    Original     		PDF SIS811 100KHz, SIS811-331 SIS811-471 SIS811-102 SIS811-681 SIS811-220 SIS811-330 1000uH -20oC inductor 221

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS890DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF SiS890DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiS888DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS822DNT_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiS822DNT AN609, 4429u 9523u 6061m 9816m 9565m 5122m 6905m 29-Apr-14

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS892ADN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS862DN www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS862DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original     		PDF SiS892ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS892DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)f 0.029 at VGS = 10 V 30g 0.042 at VGS = 4.5 V 25 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiS892DN 2002/95/EC SiS892DN-T1-GE3 18-Jul-08

    10uH inductor

    Abstract: SIS811
    Text: SMT Power Inductor SIS811 Type Features High current 3.5A, 10uH type. Unshielded. Self-leads ,suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter, DC-AC inverters


    Original     		PDF SIS811 SIS811-100 SIS811-H) SIS811-680 SIS811-101 SIS811-151 SIS811-221 SIS811-331 SIS811-471 SIS811-681 10uH inductor

    S1209

    Abstract: SiS890DN
    Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm


    Original     		PDF SiS890DN SiS890DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S1209

    SiS892ADN

    Abstract: No abstract text available
    Text: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested


    Original     		PDF SiS892ADN SiS892ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    p54c

    Abstract: SiS 85C503 85c501 3-8 decoder 74138 pin diagram 3-8 decoder 74138 85c503 9ROM SiS85C501 SiS chipset T54B
    Text: Pentium/P54C PCI/ISA Chipset 1 85C501/502/503 Overview SiS85C501 SiS85C502 SiS85C503 PCI/ISA Cache Memory Controller PCMC PCI Local Data Buffer (PLDB) PCI System I/O (PSIO) A whole set of the SiS85C501, 85C502, and 85C503 provides fully integrated support for the


    Original     		PDF Pentium/P54C 85C501/502/503 SiS85C501 SiS85C502 SiS85C503 85C502, 85C503 p54c SiS 85C503 85c501 3-8 decoder 74138 pin diagram 3-8 decoder 74138 9ROM SiS chipset T54B

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS892DN Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS892DN 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS822DNT www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiS822DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS892DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)f 0.029 at VGS = 10 V 30g 0.042 at VGS = 4.5 V 25 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiS892DN 2002/95/EC SiS892DN-T1-GE3 11-Mar-11

    SIS83

    Abstract: No abstract text available
    Text: SMT Power Inductor SIS83 Type Features Low profile 3.0mm max. height SMD type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,


    Original     		PDF SIS83 100KHz, Is471 SIS83-221 SIS83-331 SIS83-471 SIS83-681 SIS83-102 1000uH -20oC

    Untitled

    Abstract: No abstract text available
    Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm


    Original     		PDF SiS890DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm


    Original     		PDF SiS890DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS888DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiS888DN AN609, 0033m 8804u 0137m 3078m 3392m 8067m 5000m 15-Sep-14

    SIS85

    Abstract: SIS85-100 SIS85-150 SIS85-1R0 SIS85-1R5 SIS85-220 SIS85-2R2 SIS85-330 SIS85-3R3 SIS85-4R7
    Text: SMT Power Inductor SIS85 Type Features Low profile 5.0mm max. height , high current (6.8A, 1uH) SMD type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,


    Original     		PDF SIS85 SIS85-680 SIS85-101 SIS85-151 SIS85-221 SIS85-331 SIS85-471 SIS85-681 SIS85-102 1000uH SIS85-100 SIS85-150 SIS85-1R0 SIS85-1R5 SIS85-220 SIS85-2R2 SIS85-330 SIS85-3R3 SIS85-4R7

    P54C

    Abstract: SiS85C503 SiS85C501 SiS85C502 SiS+85C503
    Text: Pentium/P54C PCI/ISA Chipset 1 85C501/502/503 Overview SiS85C501 SiS85C502 SiS85C503 PCI/ISA Cache Memory Controller PCMC PCI Local Data Buffer (PLDB) PCI System I/O (PSIO) A whole set o f the SiS85C501, 85C502, and 85C503 provides fully integrated support for the


    OCR Scan     		PDF Pentium/P54C 85C501/502/503 SiS85C501 SiS85C502 SiS85C503 85C502, 85C503 P54C SiS+85C503

    SIS83

    Abstract: No abstract text available
    Text: SMT Power Inductor SIS83 Type Features • ■ ■ ■ ■ ■ Low profile 3.0mm max. height SMD type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,


    OCR Scan     		PDF SIS83 SIS83-100 SIS83-150 SIS83-220 SIS83-330 SIS83-470 SIS83-680 SIS83-101 SIS83-151

    SIS811

    Abstract: No abstract text available
    Text: SMT Power Inductor SIS811 Type Features • High current 3.5A, 10uH type. ■ Unshielded. ■ Self-leads .suitable fo r high density mounting. ■ High energy storage and low DCR. ■ Provided with embossed carrier tape packing. ■ Ideal for power source circuits, DC-DC converter, DC-AC Inverters


    OCR Scan     		PDF SIS811 SIS811-100 SIS811-150 SIS811-220 SIS811-330 SIS811-470 SIS811-680 SIS811-101