PHILIPS SMALL SIGNAL DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page Datasheet M3D054 BAS32L/S High-speed diode Product specification 2001 Mar 01 Philips Semiconductors Product specification High-speed diode BAS32L/S FEATURES DESCRIPTION • Small hermetically sealed glass SMD package
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M3D054
BAS32L/S
613514/01/pp12
PHILIPS SMALL SIGNAL DIODE
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nec d 588
Abstract: NEC DIODE LASER PS2001
Text: DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.
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NX6508
nec d 588
NEC DIODE LASER
PS2001
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NX5501
Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.
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NX6508
NX5501
NX5304
NX5306
NX5307
NX5504
NX6306
NX6307
STM-16
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nec d 588
Abstract: PX10160E
Text: DATA SHEET LASER DIODE NX8517XC Series 1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8517XC is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical
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NX8517XC
nec d 588
PX10160E
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NX7314UA
Abstract: NX7315UA NX7312UA NX7313UA NX8310UA NX8311UD NX8510UD STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX8510UD Series 1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8510UD is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical
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NX8510UD
NX7314UA
NX7315UA
NX7312UA
NX7313UA
NX8310UA
NX8311UD
STM-16
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IRF7101
Abstract: IRF7421D1
Text: PD - 91411C IRF7421D1 PRELIMINARY FETKYä MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A A D A 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V
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91411C
IRF7421D1
forwar10)
IRF7101
IRF7421D1
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5M MARKING CODE SCHOTTKY DIODE
Abstract: HEXFET SO-8 marking ky fet MOSFET SO-8 IRF7807D1 EIA-541 807D1
Text: PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free Description A A D A 1 8 S 2 7 D S 3 6 D G 4
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IRF7421D1PbF
EIA-481
EIA-541.
5M MARKING CODE SCHOTTKY DIODE
HEXFET SO-8
marking ky fet
MOSFET SO-8
IRF7807D1
EIA-541
807D1
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Untitled
Abstract: No abstract text available
Text: PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free A A D 1 8 S 2 7 D S 3 6 D G 4 5 D A VDSS = 30V
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IRF7421D1PbF
EIA-481
EIA-541.
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BFY 99
Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8508 BFY10
Text: PRELIMINARY DATA SHEET LASER DIODE NX8508 Series 1 470 TO 1 610 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s, CWDM DESCRIPTION The NX8508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode coaxial module with an
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NX8508
BFY 99
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8304CE-CC
NX8503BG-CC
BFY10
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Untitled
Abstract: No abstract text available
Text: PD- 91411D IRF7421D1 FETKYä MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A A D 1 8 S 2 7 D S 3 6 D G 4 5 D A VDSS = 30V RDS on = 0.035Ω
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91411D
IRF7421D1
EIA-481
EIA-541.
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EIA-541
Abstract: IRF7421D1 IRF7807D1 807d1
Text: PD- 91411D IRF7421D1 FETKYä MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A A D 1 8 S 2 7 D S 3 6 D G 4 5 D A VDSS = 30V RDS on = 0.035Ω
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91411D
IRF7421D1
EIA-481
EIA-541.
EIA-541
IRF7421D1
IRF7807D1
807d1
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS79SB40 FEATURES DESCRIPTION • Low forw ard voltage Planar S chottky barrier diode encapsulated in an S C -79 S O D 523 ultra sm all
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1PS79SB40
SC-79
115002/00/01/pp8
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S20LC20U
Abstract: kl 05 diode kl diode
Text: 7 -f> S U tipe Super Fast Recovery Diode Twin Diode I W v f-j& lg l S20LC20U OUTLINE DIMENSIONS Case : MTO-3P ü 200V 20A •trr3 5 n s •*È *» B Œ 2 K V S M S £5 * • S H « ÎS •yu-TU'fio t mm. OA • W g , FA RATINGS •Îê W it^ S Ë fë m A bsolute M ax im u m Ratings
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S20LC20U
S20LC20U
kl 05 diode
kl diode
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BAI 59 DIODE
Abstract: T346 1PS59SB20 AN 6752
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T 1PS59SB20 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Jul 28 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20
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1PS59SB20
1PS59SB20
SC-59
115104/00/01/pp8
BAI 59 DIODE
T346
AN 6752
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Jul 16 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS76SB40 FEATURES DESCRIPTION • Low forw ard voltage Planar S chottky b a rrie r diode encapsulated in a S O D 323 ve ry sm all plastic
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1PS76SB40
115002/00/02/pp8
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BAP51-03
Abstract: DIODE S4 52 diode AY 101 AY106 AY103
Text: DISCRETE SEMICONDUCTORS [M m S M EET BAP51 -03 General purpose PIN diode Preliminary specification Supersedes data of 1999 Apr 01 Philips Semiconductors 1999 May 10 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-03
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BAP51
BAP51-03
SCA64
125004/00/02/pp8
BAP51-03
DIODE S4 52
diode AY 101
AY106
AY103
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181 PH diode
Abstract: 1PS75SB45 645 LEM
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Nov 07 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier double diode 1PS75SB45 FEATURES DESCRIPTION • Low forw ard voltage Planar S chottky b a rrie r double diode encapsulated in a S O T 4 1 6 SC 75 ultra
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1PS75SB45
MAM377
115002/00/02/pp8
181 PH diode
1PS75SB45
645 LEM
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAV199W Low-leakage double diode Product specification Supersedes data of 1998 Jan 09 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV199W
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BAV199W
BAV199W
115002/00/03/pp8
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n 943 y
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBD6100 High-speed double diode Product specification Supersedes data of 1996 Sep 18 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode PMBD6100 FEATURES
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PMBD6100
PMBD6100
115002/00/03/pp12
n 943 y
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smd p5c
Abstract: smd AYA
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBD7000 High-speed double diode Product specification Supersedes data of 1996 Sep 18 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode PMBD7000 FEATURES
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PMBD7000
PMBD7000
115002/00/03/pp12
smd p5c
smd AYA
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double diode SMD A7p
Abstract: smd code A7p A7P smd a7p smd diode smd A7p diode A7p bav 17 diode A7P DIODE
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAV99 High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAV99 FEATURES DESCRIPTION
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BAV99
BAV99
115002/00/03/pp12
double diode SMD A7p
smd code A7p
A7P smd
a7p smd diode
smd A7p
diode A7p
bav 17 diode
A7P DIODE
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAW156 Low-leakage double diode Product specification Supersedes data of 1996 Mar 13 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification Low-leakage double diode FEATURES BAW156 PINNING
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BAW156
BAW156
115002/00/03/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS P Â T Â S ln lE E T BAS216 High-speed switching diode 1999 Apr 22 Product specification Supersedes data of 1996 Apr 03 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed switching diode
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BAS216
BAS216
115002/3180/04/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAW56 High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAW56 FEATURES DESCRIPTION
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BAW56
BAW56
115002/00/03/pp12
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