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    DIODE RG2 Search Results

    DIODE RG2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE RG2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    rg2006

    Abstract: A1847 ENA1847 RG2006JS-SB
    Text: RG2006JS-SB Ordering number : ENA1847 SANYO Semiconductors DATA SHEET RG2006JS-SB Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications


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    ENA1847 RG2006JS-SB O-220ML SC-67, OT-186use. A1847-3/3 rg2006 A1847 ENA1847 RG2006JS-SB PDF

    RG2006

    Abstract: RG2006n RG2006JN to220ml ENA1784 A1784
    Text: RG2006JN Ordering number : ENA1784 SANYO Semiconductors DATA SHEET RG2006JN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications Absolute Maximum Ratings at Ta=25°C


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    RG2006JN ENA1784 PW100s, cycle50% A1784-3/3 RG2006 RG2006n RG2006JN to220ml ENA1784 A1784 PDF

    RG2006

    Abstract: A1434-1 TC-00002137 ENA1434A
    Text: RG2006LN Ordering number : ENA1434A SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.


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    RG2006LN ENA1434A PW100s, cycle50% A1434-3/3 RG2006 A1434-1 TC-00002137 ENA1434A PDF

    RG2006

    Abstract: ENA1434 A1434-1 VRRM600V
    Text: RG2006LN Ordering number : ENA1434 SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.


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    RG2006LN ENA1434 A1434-3/3 RG2006 ENA1434 A1434-1 VRRM600V PDF

    marking dalc

    Abstract: DALC208 74HC04 DALC208SC6 SMP75-8 pspice model PIN diode Pspice model
    Text: DALC208 Low capacitance diode array Features • Protection of 4 lines ■ Peak reverse voltage: VRRM = 9 V per diode ■ Very low capacitance per diode: C < 5 pF ■ Very low leakage current: IR < 1 µA 1 SOT23-6L Plastic Benefits ■ Cost-effective solution compared with discrete


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    DALC208 OT23-6L IEC61000-4-2 883G-Method marking dalc DALC208 74HC04 DALC208SC6 SMP75-8 pspice model PIN diode Pspice model PDF

    Untitled

    Abstract: No abstract text available
    Text: DALC208 Low capacitance diode array Features • Protection of 4 lines ■ Peak reverse voltage: VRRM = 9 V per diode ■ Very low capacitance per diode: C < 5 pF ■ Very low leakage current: IR < 1 µA 1 SOT23-6L Plastic Benefits ■ Cost-effective solution compared with discrete


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    DALC208 OT23-6L IEC61000-4-2 883G-Method PDF

    PIN diode ADS model

    Abstract: PIN attenuator ADS model ll110 simulation ads advanced design system ADS 10 diode diode ADS model TOKO INDUCTORS PIN diode SPICE model HMPP-3860
    Text: HMPP-3865 MiniPAK PIN Diode High Isolation SPDT Switch Design for 1.9 GHz and 2.45 GHz Applications Application Note 1330 Introduction The Agilent HMPP-3865 parallel diode pair combines low inductance, low capacitance and low package parasitics, increasing


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    HMPP-3865 5988-8470EN PIN diode ADS model PIN attenuator ADS model ll110 simulation ads advanced design system ADS 10 diode diode ADS model TOKO INDUCTORS PIN diode SPICE model HMPP-3860 PDF

    PIN diode ADS model

    Abstract: PIN attenuator ADS model PIN diode SPICE model TOKO INDUCTORS TOKO INDUCTORS spice HMPP-3860 HMPP-3862 HMPP-3865 MCH18 RG200D
    Text: HMPP-3865 MiniPAK PIN Diode High Isolation SPDT Switch Design for 1.9 GHz and 2.45 GHz Applications Application Note 1330 Introduction The Avago Technologies HMPP-3865 parallel diode pair combines low inductance, low capacitance and low package parasitics, increasing the maximum frequency


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    HMPP-3865 5988-8470EN HSMP-389V HSMP-3890 PIN diode ADS model PIN attenuator ADS model PIN diode SPICE model TOKO INDUCTORS TOKO INDUCTORS spice HMPP-3860 HMPP-3862 MCH18 RG200D PDF

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO., LTD. RG2 1 Scope The present specifications shall apply to an RG2. 2 Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3 Flammability UL94V-0 Equivalent 4 絶 Absolute maximum ratings


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    UL94V-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO., LTD. RG2A 1 Scope The present specifications shall apply to an RG2A. 2 Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3 Flammability UL94V-0 Equivalent 4 Absolute maximum ratings No.


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    UL94V-0 PDF

    RG2Y

    Abstract: No abstract text available
    Text: RG2Y ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 70 Volts Io : 1.5 Amperes D2A FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free


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    UL94V-O MIL-STD-202, RG2Y PDF

    RG2A DIODE

    Abstract: RG2A DIODE RG2A
    Text: RG2A ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 600 Volts Io : 1.0 Ampere D2A FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free


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    UL94V-O MIL-STD-202, RG2A DIODE RG2A DIODE RG2A PDF

    A13B

    Abstract: DALC208SC6 DALC206SC6 a13b 5 pin a13 marking sot23 marking dalc IEC1000-4-2 SC74 74HC04 diode MARKING CODE A9
    Text: DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD and/or over and undershoot protection for datalines is required : Sensitive logic input protection Microprocessor based equipment Audio / Video inputs


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    DALC208SC6 OT23-6L DALC208SC6 A13B DALC206SC6 a13b 5 pin a13 marking sot23 marking dalc IEC1000-4-2 SC74 74HC04 diode MARKING CODE A9 PDF

    A13B

    Abstract: FigA12 a13b 5 pin sot23/smd DALC a13 marking sot23 marking dalc 74HC04 DALC208SC6 SC74 DALC SOT23-6
    Text: DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD and/or over and protection for datalines is required : Sensitive logic input protection Microprocessor based equipment Audio / Video inputs Portable electronics


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    DALC208SC6 OT23-6L DALC208SC6 A13B FigA12 a13b 5 pin sot23/smd DALC a13 marking sot23 marking dalc 74HC04 SC74 DALC SOT23-6 PDF

    A13B

    Abstract: MARKING CODE DALC BV99 a13 marking sot23 74HC04 DALC208SC6 SC74 0118E a13b 5 pin PIN diode Pspice model
    Text: DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD and/or over and protection for datalines is required : n Sensitive logic input protection n Microprocessor based equipment n Audio / Video inputs


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    DALC208SC6 OT23-6L DALC208SC6 DALC208SChts A13B MARKING CODE DALC BV99 a13 marking sot23 74HC04 SC74 0118E a13b 5 pin PIN diode Pspice model PDF

    UAF41

    Abstract: CDA 5,5 Mc CDA 5.5 MC alim H242 551-va
    Text: UAF41 DIODE-PENTODE with variable mutual conductance for use as H.F., I.F. and L.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. et B.F. DIODE-PENTHODE mit veränderlicher Steilheit zur Ver­ wendung als H.F.-, Z.F.- und H.F. Verstärker


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    UAF41 UAF41 CDA 5,5 Mc CDA 5.5 MC alim H242 551-va PDF

    EAF42

    Abstract: ech41 philips EAF 42 ECH 42 philips diagram fr 310 Philips schema philips fr 310 RG211 ECH42 390SV
    Text: IËÂF42 PHILIPS DIODE-PENTODE with variable mutual conductance for use as R.F., I.F. or A.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. ou B.F. DIODE-PENTODE mit veränderlicher Steilheit zur Ver­ wendung als HF-, ZF- oder NF-Verstärker


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    EAF42 7R02634 110kil EAF42 ech41 philips EAF 42 ECH 42 philips diagram fr 310 Philips schema philips fr 310 RG211 ECH42 390SV PDF

    EBF11

    Abstract: ebf 83 pentode RG2 DIODE philips 4521 ebf 83 s 452-2
    Text: PHILIPS EBF11 DOUBLE-DIODE PENTODE for use as R.F., I.F. and A.F. amplifier DOUBLE-DIODE-PENTHODE pour utilisation en amplifica­ trice H.F., M.F. et B.F. DOPPELDIODE-PENÎODE zur Verwendung als HF-, ZF- und NF-Verstärker Heating : indirect Chauffage: indirect


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    EBF11 EBF11 ebf 83 pentode RG2 DIODE philips 4521 ebf 83 s 452-2 PDF

    aml 10 series

    Abstract: Scans-001779
    Text: DAF 40 DAF 4 0 Diode-R.F. pentode battery valve The D A F 40 is a diode-pentode for b a tte ry operation; th e p entode section is designed for R .F . an d I.F . am plification, th e diode section for d etectio n a n d A.G.C. A b a tte ry w ith a nom inal voltage of 1.4 V can be used for th e


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    -DAF40 aml 10 series Scans-001779 PDF

    4413

    Abstract: No abstract text available
    Text: EBF 2 P H ILIP S DOUBLE-DIODE PENTODE with variable mutual conductance for use as R.F., I.F. and A.F. amplifier DOUBIE-DIODE-PENTHODE à pente variable pour utili­ sation en amplificatrice H.F., M.F. et B.F. DOPPELDIODE-PENTODE mit veränderlicher Steilheit zur


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    UAF42

    Abstract: UAF42 tube Philips schema UCH41 UCH42 diode ponte uaf 42 nf schaltungen RK 69 yb 939
    Text: UAF 42 DIODE-PEHXODE with variable mutual conduotance for use as H.F., I.F. and L.F. amplifier DI0DE-PENIHÖD3 à ponte variable pour l'utilisation oomme amplificatrice H.F., K.F. et B.F. DIODE-PENTHODE mit veränderlicher Steilheit zur Verv/endung als H.F.-, Z.F.— und H.F. Verstärker


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    UAF42 PR02641 \UAF42 JCH42 UAF42 UAF42 tube Philips schema UCH41 UCH42 diode ponte uaf 42 nf schaltungen RK 69 yb 939 PDF

    UAF42

    Abstract: UAF 41 resistor 0.22 Volvi uaf41 uch41
    Text: U A F 42 U A F 41 U A F 4 2 (U A F 4 1 ) V a ria b le -m u diode-pentode Fig. 1 The U A F 42, show ing the electrode system (approxim ately actual size). The UAF 42 is a variable-mu diode-pentode for A.C./D.C. receivers having a heater circuit carrying 100 mA. The pentode section is intended for use


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    cps-3500

    Abstract: 5972 pentode simple vu audio meter I960 Scans-0017353
    Text: TENTATIVE DATA IU5WA TUNG-SOL • DIODE PENTODE M INIATURE T Y P E - 4 MAX li’ MAX. T -5 4 2 i MAX. A N Y MOUNTING POSITION BOTTOM VIEW MINIATURE BUTTON 7 PIN BASE GLASS BULB 6BW T H E 1U5WA IS A F IL A M E N T T Y P E , S H AR P C U T - O F F , DIODE P E N T O D E IN T H E 7 PIN MINIA­


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    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


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    1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement" PDF