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    RG2006

    Abstract: RG2006ln A1434-1
    Text: RG2006LN 注文コード No. N A 1 4 3 4 A 三洋半導体データシート 半導体データシート No.NA1434 をさしかえてください。 RG2006LN シリコン拡散接合型 低 VF・高速スイッチングダイオード 特長 ・高耐圧である VRRM=600V 。


    Original     		PDF RG2006LN NA1434 IT13677 IT14499 IT14498 IT13678 A1434-2/3 A1434-3/3 RG2006 RG2006ln A1434-1

    RG2006

    Abstract: A1434-1 TC-00002137 ENA1434A
    Text: RG2006LN Ordering number : ENA1434A SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.


    Original     		PDF RG2006LN ENA1434A PW100s, cycle50% A1434-3/3 RG2006 A1434-1 TC-00002137 ENA1434A

    RG2006

    Abstract: ENA1434 A1434-1 VRRM600V
    Text: RG2006LN Ordering number : ENA1434 SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.


    Original     		PDF RG2006LN ENA1434 A1434-3/3 RG2006 ENA1434 A1434-1 VRRM600V