10E-02
Abstract: QRSB165001
Text: QRSB165001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com High Voltage Single Diode Module 650 Amperes/11,000 Volts A D G C H B E 3 M 2 F 1 L K N P P Description: Powerex Single Diode Modules are designed for use in applications
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QRSB165001
Amperes/11
10E-02
QRSB165001
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G 839 DIODE
Abstract: 10E-02 QRSB165001
Text: QRSB165001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com High Voltage Single Diode Module 650 Amperes/11,000 Volts A D G C H B E 3 M 2 F 1 L K N P P R 3 S (3 PLACES) 2 RB Description: Powerex Single Diode Modules are
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QRSB165001
Amperes/11
G 839 DIODE
10E-02
QRSB165001
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E78996 G1 G2
Abstract: tr 453 thyristor thyristor t 380 common cathode Thyristor 200A thyristor code FAST SWITCHING THYRISTOR 1000A fast thyristor module induction heating K8002 300A thyristor gate control circuit
Text: VSK.F200.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3500 VRMS isolating voltage
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E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
E78996 G1 G2
tr 453 thyristor
thyristor t 380
common cathode Thyristor 200A
thyristor code
FAST SWITCHING THYRISTOR 1000A
fast thyristor module induction heating
K8002
300A thyristor gate control circuit
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Inverters el wire
Abstract: tr 453 thyristor
Text: VSK.F180.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 180 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3000 VRMS isolating voltage
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E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Inverters el wire
tr 453 thyristor
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fast thyristor 200A
Abstract: thyristor welder F200 thyristor t 380
Text: VSK.F200.P Series Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAKTM Power Modules , 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode RoHS • High surge capability COMPLIANT • Electrically isolated baseplate
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18-Jul-08
fast thyristor 200A
thyristor welder
F200
thyristor t 380
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E78996 G1 G2
Abstract: vskt
Text: VSK.F200.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3500 VRMS isolating voltage
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E78996
2002/95/EC
18-Jul-08
E78996 G1 G2
vskt
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E78996 G1 G2
Abstract: k20s diode ba 204 thyristor code
Text: VSK.F180.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 180 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3000 VRMS isolating voltage
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E78996
2002/95/EC
11-Mar-11
E78996 G1 G2
k20s
diode ba 204
thyristor code
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VSK.F180.P
Abstract: k20s TA7000
Text: VSK.F180.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 180 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3000 VRMS isolating voltage
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E78996
2002/95/EC
11-Mar-11
VSK.F180.P
k20s
TA7000
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300A thyristor gate control circuit
Abstract: No abstract text available
Text: VSK.F200.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3500 VRMS isolating voltage
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E78996
2002/95/EC
11-Mar-11
300A thyristor gate control circuit
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E78996 G1 G2
Abstract: vsk.f180 VSK.F180.P thyristor welder
Text: VSK.F180.P Series Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAKTM Power Modules , 180 A FEATURES • Fast turn-off thyristor • Fast recovery diode RoHS • High surge capability COMPLIANT • Electrically isolated baseplate
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Original
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PDF
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E78996
18-Jul-08
E78996 G1 G2
vsk.f180
VSK.F180.P
thyristor welder
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tr 453 thyristor
Abstract: No abstract text available
Text: VSK.F180.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 180 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3000 VRMS isolating voltage
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Original
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E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
tr 453 thyristor
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Untitled
Abstract: No abstract text available
Text: VSK.F200.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3500 VRMS isolating voltage
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Original
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PDF
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E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VSK.F180.P
Abstract: fast thyristor module induction heating
Text: VSK.F180.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 180 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3000 VRMS isolating voltage
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Original
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E78996
2002/95/EC
18-Jul-08
VSK.F180.P
fast thyristor module induction heating
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thyristor SCR 1000A
Abstract: fast thyristor module induction heating
Text: VSK.F200.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3500 VRMS isolating voltage
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PDF
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E78996
2002/95/EC
11-Mar-11
thyristor SCR 1000A
fast thyristor module induction heating
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Untitled
Abstract: No abstract text available
Text: SÊ GEC P L E S S E Y S e p t e m b e r 1995 SEM IC O ND UC TO RS DS4086-2.2 TV30 RECTIFIER DIODE KEY PARAMETERS v RRM 2000V 335A *F A V 6000A ^FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding.
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DS4086-2
20UNF
37bfl522
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6ri30f
Abstract: Diode C 1320 6RI30G-160 R702 2RI100E 2RI60E-060 6RI100E 6RI150E-060 6RI50E-060 IMF 080
Text: DIODE M O D U LES | P f P i | Ratings and Specifications SutimtimB H 600 volts class general use diode m o d u les/E series D iivicu ly p t' V rrm V rsm lo Ifsm Ft V fm I rrm A m p s. A m p s. A 2s V o lts mA Rth j-C Package °C/W V o lts V o lts 6RI30F 060
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6RI30F
6RI50E-060
6RI100E
6RI150E-060
2RI60E-060
2RI100E
2RI150fc
2RI250F-060
R604A
R605A
Diode C 1320
6RI30G-160
R702
IMF 080
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Untitled
Abstract: No abstract text available
Text: ÜË GEC P L E S S E Y o c t o b e r 1995 SE M IC OND UC TOR S DS4231 -2.2 DSF21060SV FAST RECOVERY DIODE KEY PARAMETERS vR R M 6000V 1690A | A V 16000A FSM 1200(lC Q r 6 .5]lls *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ f Inverters.
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DS4231
DSF21060SV
6000A
DSF21060SV60
DSF21060SV59
DSF21060SV58
DSF21060SV57
DSF21060SV56
DSF21060SV55
37bfl522
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K50A
Abstract: noise diode BA15d/19 S6 diode Scans-0017953 "noise diode"
Text: K50A NOISE DIODE R are gas filled noise diode for use in waveguide system s in the 3 cm wave band QUICK REFERENCE DATA 18.75 dB F Noise level above 290 °K 6000 V Ignition voltage Vign > = m ax. 150 mA Anode cu rren t la HEATING: d irect, p arallel supply
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904nm
Abstract: GaAs 904nm LD67 LD61 LD60 LP-23C 904nm laser diode
Text: r LASER DIODE INC 15E D I SBÖSTÖS QDGGMSS E | a •a a I T -H I “ OS' _LD-60 SERIES_ LASER DIODE, INC. SINGLE HETEROJUNCTION GaAs LASER DIODES FEATURES High Efficiency at Low Drive Currents P Up to 20 Watts Peak Power Output P Operation to 75° C for Selected Devices
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LD-60
904nm,
904nm
GaAs 904nm
LD67
LD61
LD60
LP-23C
904nm laser diode
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Untitled
Abstract: No abstract text available
Text: r; a i F r P i F S ììP Y SEPTEMBER 1996 SEM ICO ND UCTO RS ADVANCE ENGINEERING DATA DS4218-3.3 DSF20060SF FAST RECOVERY DIODE KEY PARAMETERS v RRM 6000V 780A J f AV 7800A FSM 1400(iC Qr 6.5jis », APPLICATIONS • Inverters. ■ Choppers. ■ Inverse Parallel Diode.
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DS4218-3
DSF20060SF
DSF20060SF60
DSF20060SF58
DSF20060SF56
DSF20060SF55
CB450.
37bflSS2
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Untitled
Abstract: No abstract text available
Text: Si GEC P L E S S E Y august 1995 S E M I C O N D U C T O R S DS4191-2.3 DS2012SF RECTIFIER DIODE KEY PARAMETERS VRRM 6000V lF Av, 1015A lFSM 16500A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding.
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DS4191-2
DS2012SF
6500A
DS2012SF60
DS2012SF59
DS2012SF58
DS2012SF57
DS2012SF56
DS2012SF55
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noise diode
Abstract: K51A Scans-0017953
Text: K51A NOISE DIODE Rare gas filled noise diode for use in waveguide system s in the 10 cm wave band QUICK REFERENCE DATA Noise level above 290 °K F Ignition voltage v ign > Anode cu rren t la = max. 17. 58 dB 6000 V 300 mA HEATING: d ire c t, p ara llel supply
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BAQ806
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS P Æ m S t i E iT BAQ806 AM PIN diode Product specification File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Aug 03 PHILIPS Philips Semiconductors Product specification AM PIN diode BAQ806 FEATURES DESCRIPTION • Glass passivated
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BAQ806
BAQ806
DO-214AC
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EBL21
Abstract: UBL21 AC/DC tig UBL Series
Text: U B L 21 UBL 21 D o u b le diode o u tp u t p e n to d e The UBL 21, designed for use in AC/DC receivers and taking a max29 heater current of 100 mA, comprises a double diode and a verysensitive 11 W att output pentode. The diode and pentode sections employ a common cathode and the two diode anodes are both situated
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max29
EBL21
UBL21
AC/DC tig
UBL Series
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