Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE NGD Search Results

    DIODE NGD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE NGD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SC28L198

    Abstract: SCC2691AC1A28 LCD 09151 CSOT109 PCA9552 PCK2002 PCF8591 APPLICATION pecl clock so8 PCA9550 PCA9553
    Text: Interface Products Interface Products 67 I2C Logic Family Overview • Analog/Digital Converters It is frequency required to record analog information, such as temperature, pressure, battery level, signal strength, etc. The analog voltage information from the diode, pressure sensor,


    Original     		PDF

    8201N

    Abstract: 20A400 Direct fuel injection ignition IGBT
    Text: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N 8201N 20A400 Direct fuel injection ignition IGBT

    8205N

    Abstract: ignition IGBT
    Text: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8205N 8205N ignition IGBT

    G18N40B

    Abstract: N40B ignition IGBT g18n40
    Text: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD18N40CLBT4 NGD18N40CLBT4 G18N40B N40B ignition IGBT g18n40

    ignition IGBT

    Abstract: ngb15n41 aac marking NGB15N41CLT4
    Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features


    Original     		PDF NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL O-220 1255C) NGD15N41CL NGD15N41CLT4 ignition IGBT ngb15n41 aac marking NGB15N41CLT4

    Untitled

    Abstract: No abstract text available
    Text: NGD8201B Ignition IGBT, 20 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201B NGD8201B/D

    8205NG

    Abstract: NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G
    Text: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8205N NGD8205N/D 8205NG NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G

    Untitled

    Abstract: No abstract text available
    Text: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGD8205N NGD8205N/D

    8201N

    Abstract: ignition coil IGBT
    Text: NGD8201N Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGD8201N NGD8201N/D 8201N ignition coil IGBT

    8205N

    Abstract: NGD8205N NGD8205NT4
    Text: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8205N NGD8205N/D 8205N NGD8205N NGD8205NT4

    8205N

    Abstract: 8205 NGD8205N NGD8205NT4 0000001D
    Text: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8205N NGD8205N/D 8205N 8205 NGD8205N NGD8205NT4 0000001D

    G18N40B

    Abstract: N40B NGD18N40CLBT4 NGD18N40CLB aac marking g18n40
    Text: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD18N40CLBT4 NGD18N40CLB/D G18N40B N40B NGD18N40CLBT4 NGD18N40CLB aac marking g18n40

    8201N

    Abstract: NGD8201N NGD8201NT4
    Text: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201N NGD8201N NGD8201NT4

    8201NG

    Abstract: NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4
    Text: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201NG NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4

    N40B

    Abstract: G18N40B g18n40
    Text: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD18N40CLBT4 NGD18N40CLB/D N40B G18N40B g18n40

    8201NG

    Abstract: 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G
    Text: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201NG 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G

    NGD 8205NG

    Abstract: 8205NG NGD8205N NGD8205NT4 NGD8205NT4G
    Text: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8205N NGD8205N/D NGD 8205NG 8205NG NGD8205N NGD8205NT4 NGD8205NT4G

    dpak 369C

    Abstract: No abstract text available
    Text: NGD8205N Ignition IGBT 20 A, 350 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGD8205N NGD8205N/D dpak 369C

    8201N

    Abstract: 20A400 NGD8201N NGD8201NT4
    Text: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGD8201N NGD8201N/D 8201N 20A400 NGD8201N NGD8201NT4

    Untitled

    Abstract: No abstract text available
    Text: HL1541FG Laser Diode Description H L 1 5 4 1 F G is a 1.55 f i m In G aA sP distributedfeedback D F B laser diode with buried h e te ro ­ stru ctu re. It is su itab le as a light so u rce in high-bit-rate, lo ng-distance fiberoptic com m u n icatio n s and vari­


    OCR Scan     		PDF HL1541FG

    Untitled

    Abstract: No abstract text available
    Text: HL1521AC Laser Diode Description HL1521 A C is a 1.55 im In G aA sP laser diode with d o u b le h etero ju n ctio n stru ctu re. It is su itab le as a light source in high-bit-rate, lo ng-distance fiberoptic co m m u n icatio n s an d vari­ o u s o th e r types o f optical equipm ent.


    OCR Scan     		PDF HL1521AC HL1521

    2SC 1570

    Abstract: EAM LD
    Text: HL1521FG Laser Diode Description A H L 1 5 2 1 F G is a 1.55 /¿m In G a A sP laser diode with b u ried h e te ro stru c tu re . It is su itable as a light so u rce in h igh-bit-rate, lo ng-distance fiberoptic co m m u n icatio n s and v ario u s o th e r types o f optical eq u ip m en t.


    OCR Scan     		PDF HL1521FG 2SC 1570 EAM LD

    Untitled

    Abstract: No abstract text available
    Text: HL 1361 AC Under Development L a se r D io de Description H L 1 3 6 1 A C is a 1.3 ¿¿m In G aA sP distributedfeedback D F B laser diode w ith A/4 phase shifted. It is suitab le as a light source in high-bit-rate, lo ng-distance fiberoptic co m m u n icatio n s


    OCR Scan     		PDF

    1322A

    Abstract: 532 nm laser diode
    Text: HL1322A Laser Diode Description H L 1322A is a high-pow er 1.3 /xm InG aA sP laser d io d e w ith do u b le h etero ju n ctio n stru ctu re. It is su itab le as a light source in high-bit-rate, lo ng-distance fiberoptic co m m u n icatio n s an d vari­ o u s o th e r types o f optical eq u ip m en t. T he


    OCR Scan     		PDF HL1322A 1322A 532 nm laser diode