MADP-011034-10720T
Abstract: No abstract text available
Text: MADP-011034-10720T Non-Magnetic MELF PIN Diode Rev V2 Package Style 1072 Features ♦ ♦ ♦ ♦ Non-Magnetic Package for MRI Applications Rectangular MELF Ceramic Package Hermetically Sealed RoHS Compliant Description The MADP-011034-10720T is a surface mount PIN
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MADP-011034-10720T
MADP-011034-10720T
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transistor SMD Y1
Abstract: smd transistor Y1 sot-23
Text: Lighting Ballast - American Standard Table of Contents PRIMARY SIDE, EMI/RFI PRIMARY SIDE, Overvoltage Protection. 4
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BUF644
100-kHz
O-220
BUF654
BUF742-S-069
O-252
transistor SMD Y1
smd transistor Y1 sot-23
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y1 smd transistor
Abstract: transistor SMD Y1 c3 smd transistor smd transistor Y1 sot-23 TRANSISTOR SMD x2 smd transistor diode ZENER C2 smd 1/a4w smd transistor Y1 smd
Text: Lighting Ballast - European Standard Table of Contents PRIMARY SIDE, EMI/RFI PRIMARY SIDE, Overvoltage Protection. 4
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O-252
BUF644
100-kHz
O-220
BUF654
BUF742-S-069
y1 smd transistor
transistor SMD Y1
c3 smd transistor
smd transistor Y1 sot-23
TRANSISTOR SMD
x2 smd transistor
diode ZENER C2 smd
1/a4w smd transistor
Y1 smd
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ll-34 diode
Abstract: melf diodes color code BAV100 BAV101 BAV102 BAV103 mini melf package details DIODE SOD80C white
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company HIGH SPEED SILICON DIODES BAV100, BAV101 BAV102, BAV103 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a white band Hermetically Sealed, Glass Silicon Diodes Intended for Switching and General Purposes in Industrial Equipment e.g. Oscilloscopes,
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ISO/TS16949
BAV100,
BAV101
BAV102,
BAV103
BAV100
C-120
BAV100
103Rev141002E
ll-34 diode
melf diodes color code
BAV101
BAV102
BAV103
mini melf package details
DIODE SOD80C white
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LL-34 diodes white cathode
Abstract: BAV100 BAV101 BAV102 BAV103 BAV10
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON DIODES BAV100, BAV101 BAV102, BAV103 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a white band Hermetically Sealed, Glass Silicon Diodes
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BAV100,
BAV101
BAV102,
BAV103
BAV100
C-120
BAV100
103Rev141002E
LL-34 diodes white cathode
BAV101
BAV102
BAV103
BAV10
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON DIODES BAV100, BAV101 BAV102, BAV103 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a white band Hermetically Sealed, Glass Silicon Diodes
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BAV100,
BAV101
BAV102,
BAV103
BAV100
C-120
BAV100
103Rev141002E
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1N3595US
Abstract: No abstract text available
Text: DIODES SCA1N3595 RECTIFIER Ultra Low Leakage Radiation Hardness Assured Y R A DESCRIPTION This “high reliability ultra low leakage” rectifier diode is suitable for numerous applications in space and military area. Constructed in glass packages using an internal category-I metallurgical bond as tested per MIL-PRF-19500, this rectifier offers the working peak reverse voltage of 125V with 150mA maximum current rating. These devices are also
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SCA1N3595
MIL-PRF-19500,
150mA
1N3595
1N3595US
1N3595US
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24-ST
Abstract: 4113A 4182A 4175A MELF Dioden do213ab 4143A 4122A TGL 200
Text: TGL 41-6.8 . TGL 41-200CA Surface Mount unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden für die Oberflächenmontage 0.5 Dimensions / Maße in mm 400 W Nominal breakdown voltage
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41-200CA
UL94V-0
DO-213AB
41-160CA
1-27A
24-Standard.
24-ST
4113A
4182A
4175A
MELF Dioden
do213ab
4143A
4122A
TGL 200
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smd TRANSISTOR sot-23 a7
Abstract: 07N60 200w power amplifier PCB layout 230 AC to 5V smps ic 3525 bc817 optocoupler TDA 6275 TDA 200W 07n60 mosfet circuit diagrams TDA 4100 tda168886
Text: Version 1.0 , September 2004 Application Note AN-CoolMOS-09 200W SMPS Demonstration Board II Author: Marko Scherf, Wolfgang Frank Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board II
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AN-CoolMOS-09
TDA16888,
1X20/90I
smd TRANSISTOR sot-23 a7
07N60
200w power amplifier PCB layout
230 AC to 5V smps ic 3525
bc817 optocoupler
TDA 6275
TDA 200W
07n60 mosfet circuit diagrams
TDA 4100
tda168886
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1N963BUR-1
Abstract: EIA-296 1N962BUR1 JANTXV 1N968BUR-1 COE 7100 1n957BUR MIL-PRF-19500/117
Text: 1N957BUR-1 – 1N992BUR-1 Available on commercial versions Silicon MELF 500 mW Zener Diodes Qualified per MIL-PRF-19500/117 Qualified Levels*: JAN, JANTX, and JANTXV DESCRIPTION The popular 1N957BUR-1 through 1N992BUR-1 series of 0.5 watt Zener voltage regulators
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1N957BUR-1
1N992BUR-1
MIL-PRF-19500/117
1N957BUR-1
1N992BUR-1
DO-213AA
1N962BUR-1
1N957GURE
T4-LDS-0287-1,
1N963BUR-1
EIA-296
1N962BUR1 JANTXV
1N968BUR-1
COE 7100
1n957BUR
MIL-PRF-19500/117
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JANTX, JX, JAN
Abstract: No abstract text available
Text: 1N5550US thru 1N5554US Available on commercial versions VOIDLESS HERMETICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS Qualified Levels: JAN, JANTX, JANTXV and JANS Qualified to MIL-PRF-19500/420 DESCRIPTION This “standard recovery” surface mount rectifier diode series is military qualified and is ideal
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1N5550US
1N5554US
MIL-PRF-19500/420
T4-LDS-0230-1,
JANTX, JX, JAN
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ma47111
Abstract: ma4ph601 MA47057 MA4PH152
Text: A ^ r A x _ Hermetic Surface Mount PIN Diodes Features • SURFACE MOUNT DESIGN ■ HERMETICALLY SEALED PACKAGES ■ POWER DISSIPATION TO 1 WATT ■ LOW LOSS SWITCHING DIODES ■ LOW DISTORTION ATTENUATOR DIODES
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MIL-STD-750
MIL-STD-202.
MA47059
MA4PH101
10QuA
MA4PH152
MA4PH601
ma47111
MA47057
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MA4PH152
Abstract: AG312
Text: Hermetic Surface Mount PIN Diodes Features • SURFACE MOUNT DESIGN ■ HERMETICALLY SEALED PACKAGES ■ POWER DISSIPATION TO 1 WATT ■ LOW LOSS SWITCHING DIODES ■ LOW DISTORTION ATTENUATOR DIODES ■ SCREENABLE TO MILITARY SPECIFICATIONS Description This series of PIN diodes is encapsulated in metal
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MIL-STD-750
MIL-STD-202.
MA4PH152
AG312
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SMQ Series 510 DIODE
Abstract: No abstract text available
Text: Hermetic Surface Mount PIN Diodes V 2.00 Features • Power Dissipation to 1 Watt • Low Loss Switching Diodes • Low Distortion Attentuator Diodes Description This series of PIN diodes is encapsulated in metal elec trode faced MELF bond packages resulting in hermeti
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MA4PH236
MA4PH238
MA4PH235
MA4PH237
MA4PH239
OT-23
MA4P274
MA4P278
MA4P277
MA4P275
SMQ Series 510 DIODE
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1N 414 B
Abstract: 1N 3000 DIODE 1N4728A 1N4729A zener diode 1vu
Text: I M C 1N4728A-4764A/ZM4730A-4764A O n v iu SILICON PLANAR POWER ZENER DIODE INCORPORATED Features 1 W att Pow er Dissipation Herm etic Glass Package for High Reliability 3.3 - 100 Nom inal Zener Voltages Standard V z Tolerance is 5% "Z M " Types "1N " Types
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1N4728A-4764A/ZM4730A-4764A
DO-41
M1L-STD-202,
DO-41
000G714
1N 414 B
1N 3000 DIODE
1N4728A
1N4729A
zener diode 1vu
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schematic WELDER
Abstract: gold melting furnace ultrasonic bond
Text: Bonding and Handling Procedures for Chip Devices DISCUSSION Chip diode devices for use in integrated circuit and hybrid integrated circuits have proliferated in the last few years. Today's circuit designer is faced with a multiplicity of alter natives in the selection of diodes and packaging with each
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OT-23
schematic WELDER
gold melting furnace
ultrasonic bond
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diode ESM 134
Abstract: No abstract text available
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED C AR R IE S UL 94V-0 O PERATING AND STO RA GE TE M PE R A TU R E -65 "C to +175 "C TYPE M axim um Peak Reverse Voltage M axim um Average Rectified Current @ Half-W ave Resistive Load 60Hz
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SM4001
DO-201
DO-41
0Q007L
diode ESM 134
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Semitron Industries
Abstract: thyristor td 330 n zener DO-41 semitron surge
Text: SEHITRON INDUSTRIES LTD ME D • 813784-i 0DDÜ107 S « S L C B TM T 7 Î - H - Z 3 SERIES-P3-RANGE Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 230V - 365V ■300A Peak Pulse Current APPLICATIONS ■ Transient voltage suppression for induced lightning, NEMP,
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813784-i
DO-35
DO-35
DO-41
DO-15
DO-201AD
Semitron Industries
thyristor td 330 n
zener DO-41
semitron surge
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5KV DIODE
Abstract: h8 diode zener 127 S0T23
Text: SEÏ1ITR0N INDUSTRIES LTD 43E D B 013703^ ODGGllb T HISL CB ' 7 7 n ^ n - z 3 SERIES AI-RANGE Transient Voltage Suppressor • Glass Passivated Junction Voltage Range 68 - 350 Volts ■ 100A Peak Puise Current APPLICATIONS MECHANICAL DATA ■ The Semitron series protection devices incorporate state of
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DO-35
DO-35
DO-41
DO-15
DO-201AD
5KV DIODE
h8 diode zener
127 S0T23
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diode C1180
Abstract: LOUA sot23 C1068 loua sot 23 C1230 5KV DIODE do-15 footprint zener DO-41 C1350
Text: SEMITRON IN DU ST RI ES n i LTD 43E D • 813700^ 00GG130 3 B S L C B ^ '" P W - V 7? I 1 0 SERIES L - A N D C - R A N G E Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 68 - 350 Volts ■ 100A Peak Pulse Current APPLICATIONS Standard Device
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00GG130
DO-35
DO-35
DO-41
DO-15
DO-201AD
diode C1180
LOUA sot23
C1068
loua sot 23
C1230
5KV DIODE
do-15 footprint
zener DO-41
C1350
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Untitled
Abstract: No abstract text available
Text: H3E I SEUITRON INDUSTRIES LTD TJ • 813768=1 0000105 4 « S L C B 'T - W - T 'b TM SERIES- PI-RANGE Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 68V - 350 Volts ■100A Peak Pulse Current APPLICATIONS ■ Transient voltage suppression for induced lightning, NEMP,
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DO-35
DO-41
DO-15
DO-201AD
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Zener Diode LT 432
Abstract: 476 10k 524 L6ss Semitron Industries lt 332 diode L1117-5 L8824 L6B11 L6B12 L6B16
Text: SEMITRON INDUSTRIES LTD 43E D ôlSTfla^ OOOOlbS 0 B S L C B - r- u -z> SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5V1 to 200 Volts 75 Watt Steady State ■ 5 KWatt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS ■ A range of high power zener and avalanche surge
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9305-F-081
ma0-201AD
T0-236/S0T-23
DO-35
DO-35
DO-41
DO-15
DO-201AD
Zener Diode LT 432
476 10k 524
L6ss
Semitron Industries
lt 332 diode
L1117-5
L8824
L6B11
L6B12
L6B16
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Untitled
Abstract: No abstract text available
Text: SEPIITRON INDUSTRIES LTP 43E P WM 013700^ □□□Qllfl 2 « S L C B T - \ 1- ^ 3 S E RI E S Transient Voltage Suppressor •Glass Passivated Junction Voltage Range 6.5 to 90 Volts ■1.5KW Peak Pulse Power Low Capacitance ■5W Steady State PEAK POWER DERATING CURVE
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DO-35
DO-41
DO-15
DO-201AD
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Untitled
Abstract: No abstract text available
Text: Tem ic LL4154 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4154 Applications Extreme fast switchess Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current
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LL4154
1N4154
50mmx50mmx
24-Jun-96
24-Iun-96
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