A2 12 zener diode
Abstract: diode ZENER A2 6 A2 9 zener diode
Text: BZX55B2V4-BZX55B75 500mW, 2% Tolerance SMD Zener Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS D Features C Wide zener voltage range selection : 2.4V to 75V VZ Tolerance Selection of ±2% A Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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BZX55B2V4-BZX55B75
500mW,
DO-35
OD-27)
C/10s
A2 12 zener diode
diode ZENER A2 6
A2 9 zener diode
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BU2152FS
Abstract: BD7851FP BU2050F BU2092F BU2092FV BU2099FV HSOP25 SSOP-A32 SSOP-B20
Text: Serial-in / Parallel-out Driver Series Serial / Parallel 4-input Drivers No.09051EAT03 ●Description Serial-in-parallel-out driver incorporates a built-in shift register and a latch circuit to control a maximum of 24 LED by a 4-line
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BU2050F
BU2092F
BU2092FV
BU2099FV
BD7851FP
BU2152FS
09051EAT03
BU2152FS
HSOP25
SSOP-A32
SSOP-B20
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58LT00F
Abstract: TA58LT00F
Text: TA58LT00F 東芝バイポーラ形リニア集積回路 シリコン モノリシック TA58LT00F 150 mA ON/OFF 機能付きトラッキングレギュレータ TA58LT00F は､ON/OFF 機能付きの 150 mA 最大 小型面実装型 ロードロップアウトレギュレータです。負荷に必要な電圧をマイコン等
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TA58LT00F
TA58LT00F
58LT00F
2002/95/EC)
58LT00F
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TA58L05F
Abstract: TA58L06F TA58L08F TA58L09F TA58L10F TA58L12F TA58L15F
Text: TA58L05,06,08,09,10,12,15F 東芝バイポーラ形リニア集積回路 シリコン モノリシック TA58L05F,TA58L06F,TA58L08F,TA58L09F TA58L10F,TA58L12F,TA58L15F 250 mA ロードロップアウトレギュレータ TA58L*F シリーズは出力段に PNP トランジスタを使用した出力
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TA58L05
TA58L05F
TA58L06F
TA58L08F
TA58L09F
TA58L10F
TA58L12F
TA58L15F
TA58L*
TA58L09F
TA58L15F
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125OC
Abstract: CHTA42LPT
Text: CHENMKO ENTERPRISE CO.,LTD CHTA42LPT SURFACE MOUNT High Voltage NPN Transistor VOLTAGE 300 Volts CURRENT 500 mAmpere APPLICATION * Small Signal Amplifier . FEATURE SC-59/SOT-346 * Surface mount package. SC-59/SOT-346 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=20mA)
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CHTA42LPT
SC-59/SOT-346
SC-59/SOT-346)
300mW
SC-59/SO
125OC
-55OC
CHTA42LPT
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LL101A
Abstract: LL101B LL101C
Text: LL101A–LL101C Vishay Telefunken Small Signal Schottky Barrier Diodes Features D Integrated protection ring against static discharge D Low capacitance D Low leakage current D Low forward voltage drop Applications HF–Detector Protection circuit Diode for low currents with a low supply voltage
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LL101A
LL101C
LL101A
LL101B
D-74025
13-Mar-00
LL101B
LL101C
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LL4150
Abstract: No abstract text available
Text: LL4150 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D Low forward voltage drop D High forward current capability Applications 94 9371 High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings Tj = 25_C
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LL4150
D-74025
01-Apr-99
LL4150
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1N4154
Abstract: LS4154
Text: LS4154 Silicon Epitaxial Planar Diode Features D Electrical data identical with the device 1N4154 D Quadro Melf package Applications 96 12009 Extreme fast switches Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage
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LS4154
1N4154
D-74025
24-Jun-96
1N4154
LS4154
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SOD JEDEC
Abstract: No abstract text available
Text: BAS85 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required Absolute Maximum Ratings T, = 25°C Parameter
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BAS85
50mmx50mmx1
01-Apr-99
BAS85_
-April-99
SOD JEDEC
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Untitled
Abstract: No abstract text available
Text: _BAS86 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage ¿y Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25°C
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BAS86
50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: T em ic TZMC S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization
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OCR Scan
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50mmx50mmx
200mA
24-Jun-96
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Untitled
Abstract: No abstract text available
Text: TZM5221 B.TZM5267B Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221 B.1 N5267B • Low reverse current level • Vz-tolerance ± 5% with the \ devices Applications
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TZM5221
TZM5267B
1N5221
N5267B
50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: LL4151_ Vishay Telefun ken Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4151 Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage
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OCR Scan
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PDF
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LL4151_
1N4151
50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: Tem ic LL4154 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4154 Applications Extreme fast switchess Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current
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LL4154
1N4154
50mmx50mmx
24-Jun-96
24-Iun-96
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1009C
Abstract: No abstract text available
Text: BA679.BA679S Vishay Telefun ken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance in adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current Junction temperature
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BA679
BA679S
50mmx50mmx1
1009c
01-Apr-99
1009C
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Ip200mA
Abstract: 600L100
Text: Tem ic TZMB Semiconductors Silicon Epitaxial Planar Z-Diodes Features • • • • • • Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise Vz-tolerance ± 2% Applications y49.n1
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--300K/W
50mmx50mmxl
24-Jun-96
Ip200mA
600L100
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Untitled
Abstract: No abstract text available
Text: TZMB._ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • y Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • Vz-tolerance ± 2%
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50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: TZS4678.TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Zener voltage specified at 50 • Maximum delta Vz given from 10 ¡xA to 100 iA • Very high stability • Low noise Applications Voltage stabilization Absolute Maximum Ratings
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TZS4678.
TZS4717
300K/W
50mmx50mmx1
100mA
Number85613
-Apr-99
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: LS4151_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4151 • Quadra Melf package Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter Repetitive peak reverse voltage
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OCR Scan
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PDF
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LS4151_
1N4151
01-Apr-99
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FZIT
Abstract: No abstract text available
Text: TZQ5221 B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization
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OCR Scan
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TZQ5221
TZQ5267B
--300K/W
50mmx50mmx1
01-Apr-99
FZIT
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Untitled
Abstract: No abstract text available
Text: Tem ic BA982.BA983 Semiconductors Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance • Quadra M elf package Applications Band switching in VH F-tuners Absolute Maximum Ratings Tj = 25 °C
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BA982
BA983
50mmx50mmx
24-Jun-96
BA983
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Untitled
Abstract: No abstract text available
Text: LL4150_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings
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OCR Scan
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PDF
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LL4150_
01-Apr
LL4150
01-Apr-99
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Telefunken u 439
Abstract: No abstract text available
Text: T e m ic t z m b . S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • V/-tolerance ± 2%
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OCR Scan
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PDF
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300K/W
50mmx50mmxl
D-74025
24-Jun-96
Telefunken u 439
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DO 213
Abstract: No abstract text available
Text: Tem ic BA682.BA683 S e m i c o n d u c t o r s Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance Applications Band switching in VHF-tuners Absolute Maximum Ratings Tj = 25 °C Parameter
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BA682
BA683
50mmx50mmx
24-Jun-96
100mA
100MHz,
200MHz,
DO 213
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