Untitled
Abstract: No abstract text available
Text: SDV708D Variable Capacitance Diode Variable Capacitance Diode Features and Benefits Suitable for UHF band VCO Low series resistance : rs=0.7 Typ. SOD-323 Ordering Information Part Number Marking Code Package Packaging SDV708D V8□ SOD-323 Tape & Reel
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Original
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SDV708D
OD-323
06-JAN-13
KSD-D6C034-000
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PDF
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smd code marking v8 sot23
Abstract: philips marking 06
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PMBD354 Schottky barrier double diode Product specification 2002 Aug 06 Philips Semiconductors Product specification Schottky barrier double diode FEATURES PMBD354 MARKING • Low forward voltage • Small SMD package
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Original
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M3D088
PMBD354
PMBD354
MGC487
MGC421
SCA74
01/pp8
smd code marking v8 sot23
philips marking 06
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PDF
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Untitled
Abstract: No abstract text available
Text: SDV708D Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708D V8 SOD-323 unit : mm 1.25±0.1 0.3~0.35 Outline Dimensions 2.5±0.1 1.7±0.1 1 2
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Original
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SDV708D
OD-323
KSD-C031-001
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PDF
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C10V
Abstract: SDV708D DIODE marking V8
Text: SDV708D Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708D V8 SOD-323 unit : 1.25±0.1 0.3~0.35 Outline Dimensions mm 2.5±0.1 1.7±0.1 1 2
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Original
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SDV708D
OD-323
KSD-C031-000
C2V/10V
470MHz
C10V
SDV708D
DIODE marking V8
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PDF
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C10V
Abstract: SDV708Q
Text: SDV708Q Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708Q V8 SOD-523 Outline Dimensions unit : mm 0.70~0.90 0.32 Max. 1.50~1.70 1.10~1.30 1
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Original
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SDV708Q
OD-523
KSD-E017-001
C10V
SDV708Q
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PDF
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Untitled
Abstract: No abstract text available
Text: SDV708Q Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708Q V8 SOD-523 unit : mm 1.6±0.1 1.2±0.1 0.8±0.1 0.2 Min. Outline Dimensions 0~0.1
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Original
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SDV708Q
OD-523
KSD-E017-001
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PDF
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C10V
Abstract: SDV708Q
Text: SDV708Q Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708Q V8 SOD-523 unit : mm 1.6±0.1 1.2±0.1 0.8±0.1 0.2 Min. Outline Dimensions 0~0.1
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Original
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SDV708Q
OD-523
KSD-E017-000
C2V/10V
470MHz
C10V
SDV708Q
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PDF
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C10V
Abstract: SDV708D
Text: SDV708D 얗 Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708D V8 SOD-323 unit : mm 1.25±0.1 0.3~0.35 Outline Dimensions 2.5±0.1 1.7±0.1
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Original
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SDV708D
OD-323
KSD-C031-001
C10V
SDV708D
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PDF
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Untitled
Abstract: No abstract text available
Text: V8PM12-M3, V8PM12HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available
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Original
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V8PM12-M3,
V8PM12HM3
J-STD-020,
AEC-Q101
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: V8P45-M3, V8P45HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available
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Original
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V8P45-M3,
V8P45HM3
J-STD-020,
AEC-Q101
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: V8P8-M3, V8P8HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available
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Original
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O-277A
AEC-Q101
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: V8P8-M3, V8P8HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available
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Original
|
J-STD-020,
AEC-Q101
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
|
Untitled
Abstract: No abstract text available
Text: V8P45-M3, V8P45HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available
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Original
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V8P45-M3,
V8P45HM3
O-277A
AEC-Q101
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: V8P6-M3, V8P6HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.37 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available
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Original
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J-STD-020,
AEC-Q101
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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|
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zener zp 278
Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
Text: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20
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Original
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500mW
DODO-35
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
zener zp 278
Zener Diode minimelf
Zener diode wz 162
krc 118 056
diode 918b
zener diode 182
KD6 Z7
ZENER DIODE 18-2
diode 368b
h25b
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PDF
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type General Purpose PIN Diode BAP1321-03 SOD-323 Unit: mm • Features +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 ● High voltage, current controlled ● RF resistor for RF attenuators and switches ● Low diode capacitance +0.1
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Original
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BAP1321-03
OD-323
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification BAP1321-03 SOD-323 Unit: mm • Features +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 ● High voltage, current controlled ● RF resistor for RF attenuators and switches ● Low diode capacitance +0.1 2.6-0.1 1.0max ● Low diode forward resistance
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Original
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BAP1321-03
OD-323
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PDF
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BAP1321-03
Abstract: SC-76 DIODE S4 92
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAP1321-03 Silicon PIN diode Product specification Supersedes data of 2001 May 11 2004 Feb 17 Philips Semiconductors Product specification Silicon PIN diode BAP1321-03 FEATURES PINNING • High voltage, current controlled
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Original
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BAP1321-03
sym006
OD323
SC-76)
SCA76
R77/03/pp7
BAP1321-03
SC-76
DIODE S4 92
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PDF
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BAV70-A4
Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
Text: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film
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OCR Scan
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BAV70
OT-23
BAV70
C9/C20
50MHz
ZC830A
ZC831A
ZC832A
BAV70-A4
Diode Marking z3 SOT-23
diode marking w8
BAV70A
marking Z6 SOT-23 Capacitance
BAS 20 SOT23
SOT23 DIODE marking CODE AV
Z6 DIODE
BAS16
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BAP1321-03 Silicon PIN diode Product specification Supersedes data of 2001 May 11 2004 Feb 17 NXP Semiconductors Product specification Silicon PIN diode BAP1321-03 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION
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Original
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BAP1321-03
sym006
OD323
SC-76)
R77/03/pp8
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PDF
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DIODE marking S4 06
Abstract: SMD MARKING CODE s4 BAP1321-03 SC-76
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAP1321-03 Silicon PIN diode Product specification Supersedes data of 2001 May 11 2004 Feb 17 NXP Semiconductors Product specification Silicon PIN diode BAP1321-03 FEATURES PINNING • High voltage, current controlled PIN
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Original
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BAP1321-03
sym006
OD323
SC-76)
R77/03/pp8
DIODE marking S4 06
SMD MARKING CODE s4
BAP1321-03
SC-76
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PDF
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A2 DIODE SMD CODE MARKING
Abstract: smd code marking sot23 DIODE package sot23 smd marking A1 marking CODE R SMD DIODE smd diode marking code a2 SMD MARKING CODE M 4 Diode PMBD354
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PMBD354 Schottky barrier double diode Product specification Supersedes data of 2002 Aug 06 2003 Mar 25 Philips Semiconductors Product specification Schottky barrier double diode FEATURES PMBD354 PINNING
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Original
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M3D088
PMBD354
SCA75
613514/02/pp8
A2 DIODE SMD CODE MARKING
smd code marking sot23
DIODE package sot23 smd marking A1
marking CODE R SMD DIODE
smd diode marking code a2
SMD MARKING CODE M 4 Diode
PMBD354
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 PMBD354 Schottky barrier double diode Product data sheet Supersedes data of 2002 Aug 06 2003 Mar 25 NXP Semiconductors Product data sheet Schottky barrier double diode PMBD354 PINNING FEATURES • Low forward voltage
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Original
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M3D088
PMBD354
613514/02/pp7
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PDF
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smd code marking v8 sot23
Abstract: smd code marking WV DIODE package sot23 smd marking A1 PMBD354 NXP SMD diode MARKING CODE
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD354 Schottky barrier double diode Product data sheet Supersedes data of 2002 Aug 06 2003 Mar 25 NXP Semiconductors Product data sheet Schottky barrier double diode FEATURES PMBD354 PINNING • Low forward voltage
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Original
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M3D088
PMBD354
MGC487
613514/02/pp7
smd code marking v8 sot23
smd code marking WV
DIODE package sot23 smd marking A1
PMBD354
NXP SMD diode MARKING CODE
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PDF
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