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    DIODE MARKING H5 Search Results

    DIODE MARKING H5 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING H5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7121

    Abstract: SOD123 5h "MARKING 5H" 5H MARKING marking 5h MMSD3070 marking 33
    Text: MMSD3070 MMSD3070 Top Marking: 5H SOD123 Color Band Denotes Cathode Top Marking: 33 SOD123 BAND DENOTES CATHODE. Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage


    Original     		PDF MMSD3070 OD123 7121 SOD123 5h "MARKING 5H" 5H MARKING marking 5h MMSD3070 marking 33

    zener diode 4.7V

    Abstract: marking h2 SOD-323 ZENER Zener Diode SOD-323 marking code 2b marking 2h SOD-323 ZENER A25 ZENER DIODE E1 sod323 diode marking code 2E zener diode 4.7V current rating diode F4 8a marking code 8A
    Text: Surface Mount Zener Diode MMSZ52XXBS Series A suffix of "-C" specifies halogen-free 200mW, SOD-323 Electrical Characteristics @ T A=25 C unless otherwise specified Zener Voltage Range Note 1 Type Number Marking Code Nom V 2.4 2.5 2.7 3.0 3.3 3.6 3.9 4.3


    Original     		PDF MMSZ52XXBS 200mW, OD-323 150OC 01-Jun-2002 zener diode 4.7V marking h2 SOD-323 ZENER Zener Diode SOD-323 marking code 2b marking 2h SOD-323 ZENER A25 ZENER DIODE E1 sod323 diode marking code 2E zener diode 4.7V current rating diode F4 8a marking code 8A

    zener diode E2

    Abstract: ZENER DIODE E1 zener diode J3 DIODE H5 c2 marking C5 87 marking code MM zener MMSZ5240 MMSZ5257B RoHS MMSZ5221B MMSZ5222B
    Text: Surface Mount Zener Diode MMSZ52XXB Series A suffix of "-C" specifies halogen & lead-free 500mW,5% SOD-123 Electrical Characteristics @ T A=25 C unless otherwise specified Type Number Marking Code Zener Voltage Range Note 1 Nom V 2.4 2.5 2.7 3.0 3.3 3.6


    Original     		PDF MMSZ52XXB 500mW OD-123 01-Jun-2002 zener diode E2 ZENER DIODE E1 zener diode J3 DIODE H5 c2 marking C5 87 marking code MM zener MMSZ5240 MMSZ5257B RoHS MMSZ5221B MMSZ5222B

    H50N03J

    Abstract: MOSFET N 30V 30A 252
    Text: HI-SINCERITY Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 1/5 MICROELECTRONICS CORP. H50N03J H50N03J Pin Assignment Tab N-Channel Enhancement-Mode MOSFET 25V, 50A 1 3 2 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate


    Original     		PDF MOS200514 H50N03J H50N03J O-252 other50oC 200oC 183oC 217oC 260oC 245oC MOSFET N 30V 30A 252

    DIODE H5 SMD

    Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
    Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package


    Original     		PDF SPP80N06S2-H5 SPB80N06S2-H5 Q67060-S6052 2N06H5 Q67060-S6053 BSPP80N06S2-H5 BSPB80N06S2-H5, DIODE H5 SMD 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5

    2N06LH5

    Abstract: No abstract text available
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated


    Original     		PDF SPP80N06S2L-H5 SPB80N06S2L-H5 P-TO220-3-1 P-TO263-3-2 P-TO220-3-1 Q67060-S6054 Q67060-S6055 2N06LH5

    2N06LH5

    Abstract: No abstract text available
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated


    Original     		PDF SPP80N06S2L-H5 SPB80N06S2L-H5 P-TO263-3-2 P-TO220-3-1 Q67060-S6054 2N06LH5 2N06LH5

    2N06LH5

    Abstract: S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature Type SPP80N06S2L-H5 Package Ordering Code P- TO220 -3-1 Q67060-S6054 Marking SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055


    Original     		PDF SPP80N06S2L-H5 SPB80N06S2L-H5 Q67060-S6054 Q67060-S6055 2N06LH5 BSPP80N06S2L-H5 BSPB80N06S2L-H5, 2N06LH5 S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5

    2N06LH5

    Abstract: DIODE H5 SMD Q67060-S6055 S6054 smd diode H5 ANPS071E SPB80N06S2L-H5 SPP80N06S2L-H5 2N06
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • 175°C operating temperature • dv/dt rated Package Ordering Code Marking SPP80N06S2L-H5 P- TO220 -3-1 Q67060-S6054


    Original     		PDF SPP80N06S2L-H5 SPB80N06S2L-H5 Q67060-S6054 Q67060-S6055 2N06LH5 BSPP80N06S2L-H5 BSPB80N06S2L-H5, 2N06LH5 DIODE H5 SMD Q67060-S6055 S6054 smd diode H5 ANPS071E SPB80N06S2L-H5 SPP80N06S2L-H5 2N06

    2N06H5

    Abstract: Q67060-S6052
    Text: SPP80N06S2-H5 SPB80N06S2-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5.5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated


    Original     		PDF SPP80N06S2-H5 SPB80N06S2-H5 P-TO220-3-1 P-TO263-3-2 P-TO220-3-1 Q67060-S6052 Q67060-S6053 2N06H5

    2N06H5

    Abstract: ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
    Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 5.5 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package


    Original     		PDF SPP80N06S2-H5 SPB80N06S2-H5 Q67060-S6052 2N06H5 Q67060-S6053 BSPP80N06S2-H5 BSPB80N06S2-H5, 2N06H5 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5

    2N06H5

    Abstract: No abstract text available
    Text: SPP80N06S2-H5 SPB80N06S2-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5.5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated


    Original     		PDF SPP80N06S2-H5 SPB80N06S2-H5 P-TO263-3-2 P-TO220-3-1 Q67060-S6052 2N06H5 2N06H5

    2N06LH5

    Abstract: Q67060-S6055 Q67060-S6054 BSPP80N06S2L-H5 smd diode 1410 TC320
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • 175°C operating temperature 5 mΩ 80 P- TO263 -3-2 • Avalanche rated V A P- TO220 -3-1 • dv/dt rated Type SPP80N06S2L-H5


    Original     		PDF SPP80N06S2L-H5 SPB80N06S2L-H5 SPB80N06S2L-H5 Q67060-S6054 Q67060-S6055 2N06LH5 2N06LH5 BSPP80N06S2L-H5 BSPB80N06S2L-H5, Q67060-S6055 smd diode 1410 TC320

    2N06H5

    Abstract: No abstract text available
    Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 R DS on 5.5 m ID 80 A P- TO263 -3-2  Avalanche rated V P- TO220 -3-1  dv/dt rated Type SPP80N06S2-H5 Package


    Original     		PDF SPP80N06S2-H5 SPB80N06S2-H5 Q67060-S6052 Q67060-S6053 2N06H5 BSPP80N06S2-H5 BSPB80N06S2-H5,

    2N06LH5

    Abstract: smd diode marking G12 TRANSISTOR SMD MARKING CODE h5 DIODE H5 SMD smd marking g12 H5 SMD H5 smd diodE smd H5 T ANPS071E IPB80N06S2L-H5
    Text: IPB80N06S2L-H5 IPP80N06S2L-H5 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2L-H5 IPP80N06S2L-H5 PG-TO263-3-2 PG-TO220-3-1 SP0002-19068 2N06LH5 2N06LH5 smd diode marking G12 TRANSISTOR SMD MARKING CODE h5 DIODE H5 SMD smd marking g12 H5 SMD H5 smd diodE smd H5 T ANPS071E IPB80N06S2L-H5

    50N03

    Abstract: H50N03E
    Text: HI-SINCERITY Spec. No. : MOS200519 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 MICROELECTRONICS CORP. H50N03E H50N03E Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Enhancement-Mode MOSFET 25V, 50A


    Original     		PDF MOS200519 H50N03E H50N03E O-220AB o50oC 200oC 183oC 217oC 260oC 245oC 50N03

    50N03

    Abstract: XCR-1 H50N03U
    Text: HI-SINCERITY Spec. No. : MOS200520 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 MICROELECTRONICS CORP. H50N03U H50N03U Pin Assignment Tab N-Channel Enhancement-Mode MOSFET 25V, 50A 3 2 1 Features 3-Lead Plastic TO-263 Package Code: U


    Original     		PDF MOS200520 H50N03U H50N03U O-263 otherwi50oC 200oC 183oC 217oC 260oC 245oC 50N03 XCR-1

    ZENER 1N5

    Abstract: ZENER 1N5 232 1N5 diode Analog devices TOP marking Information Fairchild Diode Marking Change ZENER 1N5 239 diode cross reference ZENER 1N5 230 zener diode cross reference Fairchild Cross Reference
    Text: Absolute Maximum Ratings* Symbol PD Tolerance: B = 5% TA = 25°C unless otherwise noted Parameter Value Units 500 4.0 -65 to +200 mW mW/°C °C TSTG Power Dissipation Derate above 75°C Storage Temperature Range TJ Maximum Junction Operating Temperature + 200


    Original     		PDF 1N5226B 1N5257B) 1N5257B DO-35 1N5257BTR 1N5257B ZENER 1N5 ZENER 1N5 232 1N5 diode Analog devices TOP marking Information Fairchild Diode Marking Change ZENER 1N5 239 diode cross reference ZENER 1N5 230 zener diode cross reference Fairchild Cross Reference

    zener zp 278

    Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
    Text: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20


    Original     		PDF 500mW DODO-35 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B zener zp 278 Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    SMD ZENER DIODE MARKING CODE G3

    Abstract: No abstract text available
    Text: SMD Zener Diode CZRW5223B-HF Thru CZRW5256B-HF Voltage: 2.7 to 30 Volts Power: 350 mWatts RoHS Device Halogen Free SOD-123 Features 0.152 3.85 0.140(3.55) - For surface mounted applications. - General purpose,medium current - Ideally suited for automated assembly


    Original     		PDF CZRW5223B-HF CZRW5256B-HF OD-123 OD-123, MIL-STD-750 QW-JZ001 CZRW5223B 5256B-HF SMD ZENER DIODE MARKING CODE G3

    h51 diode

    Abstract: No abstract text available
    Text: ERB44 ia  jÈ S S S f t ^ V i—K • W fé '+ fè : Outline Drawings FAST RECOVERY DIODE ■ ¡E H I : Features :7jv : Marking High voltage by mesa design. • ftflM R tt # 7 - 3 - K: m High reliability Color code : Green ■ E J ii : Applications Abridged type name


    OCR Scan     		PDF ERB44( 10msS Tg30S I95t/R89) h51 diode

    A83-006

    Abstract: ERA83-006 LM MARKING A323 marking code a83
    Text: ERA83-006 ia a±'MBa s t y y ÿ j j -—p : Outline Drawings SCHOTTKY BARRIER DIODE • $tH : : Features •ftVf ■H/-F Lo w V f : Marking h-5-3- r : n S u p e r high speed sw itch in g. • C o lo r co d e : W h it e a n te « » « « « ~9 High reliability by planer design


    OCR Scan     		PDF A83-006 ERA83-006 LM MARKING A323 marking code a83