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    DIODE MARKING CODE JX Search Results

    DIODE MARKING CODE JX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE JX Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


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    1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m PDF

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


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    1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p PDF

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE PDF

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 PDF

    BAV170

    Abstract: Marking code jxs Q62702-A920 MarKING Jxs sot23 JXs sot JXs SOT23
    Text: Silicon Low Leakage Diode Array BAV 170 Low leakage applications ● Medium speed switching times ● Common cathode ● Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol


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    Q62702-A920 OT-23 BAV170 Marking code jxs Q62702-A920 MarKING Jxs sot23 JXs sot JXs SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter


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    BAV170. BAV170 PDF

    BAV170

    Abstract: No abstract text available
    Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 ! , ,   Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter


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    BAV170. BAV170 BAV170 PDF

    diode MARKING CODE jx

    Abstract: No abstract text available
    Text: SUD495Z SWITCHING DIODE High Voltage Switching Diode General Description General-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-343 surface mounted device SMD packages. Features and Benefits      Silicon epitaxial planar diode


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    SUD495Z OT-343 OT-343 25-AUG-10 KSD-D5Q003-000 diode MARKING CODE jx PDF

    diode MARKING CODE jx

    Abstract: smd marking SOT343 diode smd marking jx marking 17 sot343
    Text: SUD495Z SWITCHING DIODE High Voltage Switching Diode General Description General-purpose switching diodes, fabricated in planar technology, and packaged in small SOT-343 surface mounted device SMD packages. Features and Benefits      Silicon epitaxial planar diode


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    SUD495Z OT-343 OT-343 25-AUG-10 KSD-D5Q003-000 diode MARKING CODE jx smd marking SOT343 diode smd marking jx marking 17 sot343 PDF

    1n914 surface mount diode

    Abstract: 1N4148 minimelf marking code DIODE d6 A6 DIODE 1n4148 marking a6 sot363 ka2 t4 DIODE T4 marking
    Text: MCC Micro Commercial Components SWITCHING DIODES MCC Part Number Peak Reverse Voltage PRV V Maximum Reverse Current @ 25°C Reverse Recovery Time mA Junction Capacitance VR =4.0V, f=1MHz Cj Max. pF trr Max. nS Maximum Power Dissipation @ TA=25°C PD mW 1.00


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    300mW00mW-500mW DODO-35 1N4148 1N4150 1N4151 1N4154 1N4448 1N4454 500mW 1n914 surface mount diode 1N4148 minimelf marking code DIODE d6 A6 DIODE 1n4148 marking a6 sot363 ka2 t4 DIODE T4 marking PDF

    diode MARKING CODE jx

    Abstract: sot23 marking JR marking mh sot-23 BAS21LT1G sot-23 MARKING CODE JS 88a diode SOT-23 code marking mf
    Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE


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    BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 SC-88A diode MARKING CODE jx sot23 marking JR marking mh sot-23 BAS21LT1G sot-23 MARKING CODE JS 88a diode SOT-23 code marking mf PDF

    MAM108

    Abstract: diode MARKING CODE jx smd Product type marking code JX DIODE smd marking A1 diode smd marking jx BAV170 SMD Marking jx smd code marking LP smd code marking jx sot23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAV170 Low-leakage double diode Product specification Philips Semiconductors Product specification Low-leakage double diode BAV170 FEATURES DESCRIPTION • Plastic SMD package Epitaxial, medium-speed switching,


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    M3D088 BAV170 O-236AB MAM108 diode MARKING CODE jx smd Product type marking code JX DIODE smd marking A1 diode smd marking jx BAV170 SMD Marking jx smd code marking LP smd code marking jx sot23 PDF

    CLL2003

    Abstract: No abstract text available
    Text: Central" C LL2003 Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band.


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    CLL2003 OD-80 TheCENTRALSEMICONDUCTORCLL2003 CHARACTERISTIC250 100HA 100mA 200mA G001755 000175b CLL2003 PDF

    A1S diode

    Abstract: Marking code jxs JXs sot marking code a1s marking 7S marking code AC sot 323 diode diode a1s
    Text: SIEMENS BAW 56W Silicon Switching Diode Array •For high speed switching applications ■Common anode k l/A i m TJ U Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter


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    Q62702-A1031 OT-323 40mmm A1S diode Marking code jxs JXs sot marking code a1s marking 7S marking code AC sot 323 diode diode a1s PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Low Leakage Diode Array BAV 170 • Low leakage applications • Medium speed switching times • Common cathode Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) 3 » SOT-23 E * J Kl ° EHA0700*


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    Q62702-A920 OT-23 a535bos fl235b05 PDF

    A07004

    Abstract: JXs sot
    Text: SIEMENS Silicon Low Leakage Diode Array BAV 170 • Low leakage applications • Medium speed switching times • Common cathode Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) 3 « SOT-23 EH I M ° EH A07004


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    Q62702-A920 OT-23 A07004 A07004 JXs sot PDF

    Untitled

    Abstract: No abstract text available
    Text: 32E D • 023b3BQ Silicon Low Leakage Diode Array 001bS43 b « S IP T-Ol-OI BAV170 SIEMENS/ SPCLi SEMICON DS _ • Low Leakage applications • Medium speed switching times • Common cathode Type Marking Ordering code 8-mm tape Package BAV170


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    023b3BQ 001bS43 BAV170 Q62702-A920 T-01-09 23b32Ã 001b54b PDF

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28 PDF

    marking sSH sot-23

    Abstract: marking code 3c diode MARKING CODE SSH marking b1d
    Text: Central CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S SURFACE MOUNT SUPERmini SILICON SCHOTTKY DIODES CMSSH-3: CMSSH-3A CMSSH-3C CMSSH-3S Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3 Series types are Silicon Schottky Diodes, epoxy molded in a SUPERmini™ surface mount pack­


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    OT-323 OT-323 marking sSH sot-23 marking code 3c diode MARKING CODE SSH marking b1d PDF

    Device marking code 1m diode

    Abstract: Diode marking CODE 1M Marking Code "1m" diode diode 1M MARKING CODE motorola diode marking code 141WK diode MARKING CODE jx cq 545 SQT-323 MU diode MARKING CODE
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Sw itching Diode M1MA141WKT1 M1MA142WKT1 Motorola Preferred D *v lc * This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the


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    SC-70 M1MA141/2WKT1 inch/3000 M1MA141/2WKT3 inch/10 M1MA141WKT1 M1MA142WKT1 /SOT-323 M1MA142WKT1 Device marking code 1m diode Diode marking CODE 1M Marking Code "1m" diode diode 1M MARKING CODE motorola diode marking code 141WK diode MARKING CODE jx cq 545 SQT-323 MU diode MARKING CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . EMIF01-5250SC5 Application Specific Discretes A.S.D. FILTER WITH ESD PROTECTION MAIN APPLICATIONS Where EMI filtering in ESD sensitive equipment is required : • Mobile phone : handsets and accessories ■ RF communications DESCRIPTION The EMIF01-5250SC5 is a highly integrated T-filter


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    EMIF01-5250SC5 EMIF01-5250SC5 OT23-5L SC-59A) PDF

    1n5908a

    Abstract: 1N5908 marking AJ sod15
    Text: 1N5908 SM5908 SGS-THOMSON RfflDSæilLitSinHiOiDOi TRANS IL FEATURES • ■ ■ ■ ■ . UNIDIRECTIONALTRANSIL DIODE PEAK PULSE POWER = 1500 W @ 1ms REVERSE STAND OFF VOLTAGE = 5 V LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION The 1N5908and SM5908 are dedicated to the 5 V


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    1N5908 SM5908 1N5908and SM5908 1n5908a marking AJ sod15 PDF

    pj 68 SMD diode

    Abstract: smd diode code pj 70 smd diode code pj smd diode code pj 50 smd diode code pj 24 st smd diode marking code smd marking code pj smd diode code pj 40 smd diode pj 55 smd diode code pj 65
    Text: PD-9.1006 International S Rectifier IRF644S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third G eneration HEXFETs from International Rectifier provide the designer


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    IRF644S SMD-220 1018witty 47D1484. pj 68 SMD diode smd diode code pj 70 smd diode code pj smd diode code pj 50 smd diode code pj 24 st smd diode marking code smd marking code pj smd diode code pj 40 smd diode pj 55 smd diode code pj 65 PDF

    MarKING Jxs sot23

    Abstract: A82/MARKING MARKING D53 C2 marking code marking code C1 marking code c2 marking code LA CMPD2003 CMPD2004 CMPD2004S
    Text: Central" CMPD2003 CMPD2004 CMPD2004S Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SE M IC O N D U C TO R CMPD2003, CMPD2004, CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for


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    CMPD2003 CMPD2004 CMPD2004S OT-23 CMPD2003, CMPD2004, CMPD2004S MarKING Jxs sot23 A82/MARKING MARKING D53 C2 marking code marking code C1 marking code c2 marking code LA PDF