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    DIODE MARKING CODE B10 Search Results

    DIODE MARKING CODE B10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE B10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m PDF

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p PDF

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE PDF

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 PDF

    EC 1030

    Abstract: No abstract text available
    Text: Preliminary TSF1060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package


    Original     		ITO-220AB TSF1060C JESD22-B102D ITO-220AB 2002/95/EC 2002/96/EC TSF10100C EC 1030 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary TSF10U60C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package


    Original     		ITO-220AB TSF10U60C JESD22-B102D ITO-220AB 2002/95/EC 2002/96/EC TSF10100C PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary TSF10U45C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package


    Original     		ITO-220AB TSF10U45C JESD22-B102D ITO-220AB 2002/95/EC 2002/96/EC TSF10100C PDF

    Untitled

    Abstract: No abstract text available
    Text: SDB10200PR Schottky Barrier Rectifier DUAL COMMON ANODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common anode rectifier Pin 1, 3 : Cathode 123  Full lead Pb -free and RoHS compliant device


    Original     		SDB10200PR O-220F-3L SDB10200PR KSD-D0O047-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: SDB10100PR Schottky Barrier Rectifier DUAL COMMON ANODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common anode rectifier Pin 1, 3 : Cathode 123  RoHS compliant device


    Original     		SDB10100PR O-220F-3L SDB10100PR KSD-D0O048-000 PDF

    DIODE B6S

    Abstract: formosa bridge TO-269AA marking B1s B05S B10S Marking B1S 6 MARKING CODE B1S
    Text: Formosa MS Surface mount bridge Rectifier B05S THRU B10S Glass passivated type Features TO-269AA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. + .165 4.2 .150(3.8) For surface mounted applications.


    Original     		O-269AA MIL-S-19500 MIL-STD-750, bo150 300us DIODE B6S formosa bridge TO-269AA marking B1s B05S B10S Marking B1S 6 MARKING CODE B1S PDF

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Surface mount bridge Rectifier B05S THRU B10S Glass passivated type TO-269AA Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. + .165 4.2 .150(3.8) For surface mounted applications.


    Original     		MIL-STD-19500 O-269AA O-269AA MIL-STD-750, 300us PDF

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Surface mount bridge Rectifier B05S THRU B10S Glass passivated type Features TO-269AA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. + .165 4.2 .150(3.8) For surface mounted applications.


    Original     		O-269AA MIL-STD-19500 MIL-STD-750, 300us PDF

    TSC5303D

    Abstract: diode b10 250V transistor npn 2a
    Text: TSC5303D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original     		TSC5303D O-251 O-252 TSC53erty TSC5303D diode b10 250V transistor npn 2a PDF

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Bridge Rectifier B05S THRU B10S List List. 1 Package outline. 2 Features. 2


    Original     		MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 METHOD-1031 PDF

    B6S Bridge rectifier

    Abstract: smd diode code B6s SMD CODE list B1S smd diode code B1s B05S B10S SMD MARKING CODE B2s TO-269AA SMD CODE B8S
    Text: Formosa MS SMD Bridge Rectifier B05S THRU B10S List List. 1 Package outline. 2 Features. 2


    Original     		MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 175OC B6S Bridge rectifier smd diode code B6s SMD CODE list B1S smd diode code B1s B05S B10S SMD MARKING CODE B2s TO-269AA SMD CODE B8S PDF

    TO-269AA (MDS)

    Abstract: B10S
    Text: Formosa MS SMD Bridge Rectifier B05S THRU B10S List List. 1 Package outline. 2 Features. 2


    Original     		MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 METHOD-1021 METHOD-1031 TO-269AA (MDS) B10S PDF

    RB751V-40

    Abstract: smd code 3k
    Text: RB751V-40 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-323 Features —Low power loss, high current capability, low VF —Surface device type mounting —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant


    Original     		RB751V-40 200mW, OD-323 OD-323 MIL-STD-202, RB751V-40 smd code 3k PDF

    Untitled

    Abstract: No abstract text available
    Text: RB751V-40 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-323 Features ­Low power loss, high current capability, low VF ­Surface device type mounting ­Moisture sensitivity level 1 ­Matte Tin Sn lead finish with Nickel(Ni) underplate ­Pb free version and RoHS compliant


    Original     		RB751V-40 200mW, OD-323 OD-323 MIL-STD-202, PDF

    SMD marking code B10

    Abstract: smd diode schottky code marking 63 SMD MARKING CODE D1 low leakage signal diode sod323 "SIGNAL DIODE" 3K MARKING CODE D1 SMD CODE MARKING RB751 SMALL SIGNAL SCHOTTKY DIODE RB751V-40
    Text: RB751V-40 2000mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-323 Features —Low power loss, high current capability, low VF —Surface device type mounting —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant


    Original     		RB751V-40 2000mW, OD-323 OD-323 MIL-STD-202, SMD marking code B10 smd diode schottky code marking 63 SMD MARKING CODE D1 low leakage signal diode sod323 "SIGNAL DIODE" 3K MARKING CODE D1 SMD CODE MARKING RB751 SMALL SIGNAL SCHOTTKY DIODE RB751V-40 PDF

    smd diode s8

    Abstract: SMD MARKING CODE s8 smd s8 smd diode code b1 SMD marking code B10 DIODE SMD MARKING CODE S8 MARKING CODE MG diode diode b10 SOD-323F SMD diode Marking X1
    Text: RB751V-40WS 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-323F B C Features A —Low power loss, high current capability, low VF, low IR —Surface device type mounting D —Moisture sensitivity level 1 —Pb free version and RoHS compliant —Green compound Halogen free with suffix "G" on


    Original     		RB751V-40WS 200mW, OD-323F OD-323F MIL-STD-202, smd diode s8 SMD MARKING CODE s8 smd s8 smd diode code b1 SMD marking code B10 DIODE SMD MARKING CODE S8 MARKING CODE MG diode diode b10 SOD-323F SMD diode Marking X1 PDF

    smd diode s8

    Abstract: smd diode code b1 DIODE SMD MARKING CODE S8
    Text: RB751V-40WS 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-323F B C Features A ­Low power loss, high current capability, low VF, low IR ­Surface device type mounting D ­Moisture sensitivity level 1 ­Pb free version and RoHS compliant ­Green compound Halogen free with suffix "G" on


    Original     		RB751V-40WS 200mW, OD-323F OD-323F MIL-STD-202, smd diode s8 smd diode code b1 DIODE SMD MARKING CODE S8 PDF

    2A marking MMBT3906

    Abstract: DIODE MARKING CODE B10 MMBT3906 2a MMBT3906 marking code 2a MARKING P1 TRANSISTOR SOT-23 2A MMBT3906 on SOT-23 marking 2a Diode SOT-23 marking 3V
    Text: MMBT3906 300mW, PNP Small Signal Transistor Small Signal Diode SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		MMBT3906 300mW, OT-23 MIL-STD-202, 2A marking MMBT3906 DIODE MARKING CODE B10 MMBT3906 2a MMBT3906 marking code 2a MARKING P1 TRANSISTOR SOT-23 2A MMBT3906 on SOT-23 marking 2a Diode SOT-23 marking 3V PDF

    U840 diode motorola

    Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
    Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in


    Original     		DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001 PDF

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28 PDF