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    DIODE MARKING CODE A2 Y2 Search Results

    DIODE MARKING CODE A2 Y2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE A2 Y2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N60 transistor

    Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648 PDF

    MOSFET MARK y2

    Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
    Text: HI-SINCERITY Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 MICROELECTRONICS CORP. H02N60S Series H02N60S Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab


    Original     		MOS200504 H02N60S O-252 200oC 183oC 217oC 260oC 245oC H02N60SI, MOSFET MARK y2 y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749 PDF

    MOSFET MARK y2

    Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 MOSFET MARK H1 marking code k1 marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI PDF

    MOSFET MARK y2

    Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor


    Original     		MOS200501 H01N60S 183oC 217oC 260oC 245oC 10sec H01N60SI, MOSFET MARK y2 transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60SI PDF

    MOSFET MARK y2

    Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1 PDF

    02n60

    Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 02n60 all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60E PDF

    MOSFET MARK y2

    Abstract: mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40 H01N60
    Text: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		MOS200502 H01N60 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40 PDF

    MOSFET MARK y2

    Abstract: H01N60I MOSFET MARK H1 H01N60 H01N60J TL 434 mosfet sn60
    Text: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		MOS200502 H01N60 200oC 183oC 217oC 260oC 245oC H01N60I, H01N60J MOSFET MARK y2 H01N60I MOSFET MARK H1 H01N60J TL 434 mosfet sn60 PDF

    A/mbr+0450

    Abstract: No abstract text available
    Text: MBR10100C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM V IO (A) 100 2x5 Features VF (MAX) (V) IR (MAX) (mA) @ +25°C @ +25°C 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use


    Original     		MBR10100C 150oC O-220-3 O-220F-3 DS36953 A/mbr+0450 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR20100C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary VRRM V IO (A) 100V 2x10A Features VF (MAX) (V) IR (MAX) (mA) @ +25°C @ +25°C 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use


    Original     		MBR20100C 2x10A 150oC O-220-3 O-220F-3 DS36950 PDF

    H1117 3.3v

    Abstract: H11175 H1117-ADJ H1117 CD1117 1117 s adj 920 MARK A5 SOT89 H1117-1.8 Mark Y2 SOT MARKING KV SOT89
    Text: HI-SINCERITY Spec. No. : IC200401 Issued Date : 2004.02.01 Revised Date : 2005.07.14 Page No. : 1/8 MICROELECTRONICS CORP. H1117 Series H1117 Series Pin Assignment 3-Lead Plastic SOT-89 Package Code: M Pin 1: ADJ/GND Pin 2: VOUT Pin 3: VIN 1.2A Low Dropout Positive Voltage Regulator


    Original     		IC200401 H1117 OT-89 OT-223 200oC 183oC 217oC 260oC H1117 3.3v H11175 H1117-ADJ CD1117 1117 s adj 920 MARK A5 SOT89 H1117-1.8 Mark Y2 SOT MARKING KV SOT89 PDF

    mosfet y1

    Abstract: MOSFET MARK y2 mosfet k 61 y1 TL 434 H3055LJ Y2 MARKING
    Text: HI-SINCERITY Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 1/4 MICROELECTRONICS CORP. H3055LJ H3055LJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 20V, 13A


    Original     		MOS200606 H3055LJ H3055LJ O-252 V-10V) 200oC 183oC 217oC 260oC 245oC mosfet y1 MOSFET MARK y2 mosfet k 61 y1 TL 434 Y2 MARKING PDF

    mosfet y1

    Abstract: MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055
    Text: HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 1/4 MICROELECTRONICS CORP. H3055MJ H3055MJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 30V, 12A


    Original     		MOS200702 H3055MJ H3055MJ O-252 V-10V) 10sec mosfet y1 MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055 PDF

    H35N03J

    Abstract: MOSFET N 30V 30A 252 mosfet sn60
    Text: HI-SINCERITY Spec. No. : MOS200515 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 1/5 MICROELECTRONICS CORP. H35N03J H35N03J Pin Assignment Tab N-Channel Enhancement-Mode MOSFET 25V, 35A 1 3 2 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate


    Original     		MOS200515 H35N03J H35N03J O-252 ot50oC 200oC 183oC 217oC 260oC 245oC MOSFET N 30V 30A 252 mosfet sn60 PDF

    marking code k1

    Abstract: marking A1 TRANSISTOR HI127
    Text: HI-SINCERITY Spec. No. : HE9017 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-251 • High DC current gain • Bult-in a damper diode at E-C Darlington Schematic


    Original     		HE9017 HI127 O-251 183oC 217oC 260oC marking code k1 marking A1 TRANSISTOR HI127 PDF

    marking code k1

    Abstract: marking A1 TRANSISTOR marking y1 HI122
    Text: HI-SINCERITY Spec. No. : HI200102 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI122 is designed of general purpose and low speed switching applications.


    Original     		HI200102 HI122 O-251 HI122 183oC 217oC 260oC marking code k1 marking A1 TRANSISTOR marking y1 PDF

    HJ127

    Abstract: marking code 8A
    Text: HI-SINCERITY Spec. No. : HE6017 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-252 • High DC current gain • Built-in a damper diode at E-C Darlington Schematic


    Original     		HE6017 HJ127 O-252 183oC 217oC 260oC HJ127 marking code 8A PDF

    HE6009

    Abstract: HJ122 Y2 MARKING
    Text: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications.


    Original     		HE6009 HJ122 O-252 HJ122 200oC 183oC 217oC 260oC 245oC HE6009 Y2 MARKING PDF

    12w sot 23-3

    Abstract: CMSZDA33V zener DIODE marking A1 12w SOT 323 marking CODE Z2Z 12w marking code SOT-323 12w marking code sot 23 marking 12W zener diode a2 11 marking code 12w
    Text: Central CMSZDA3V0 THRU CMSZDA33V TM Semiconductor Corp. DUAL ZENER DIODE 3.0 VOLTS THRU 33 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSZDA3V0 Series Silicon Dual Zener Diode is a high quality voltage regulator, connected in a common anode configuration, for use in industrial, commercial,


    Original     		CMSZDA33V OT-323 CMSZDA20V CMSZDA22V CMSZDA24V CMSZDA27V CMSZDA30V 04-April 12w sot 23-3 CMSZDA33V zener DIODE marking A1 12w SOT 323 marking CODE Z2Z 12w marking code SOT-323 12w marking code sot 23 marking 12W zener diode a2 11 marking code 12w PDF

    Untitled

    Abstract: No abstract text available
    Text: DMJ7N70SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS • 100% Unclamped Inductive Switch (UIS) test in production  Low Gate Input Resistance  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 


    Original     		DMJ7N70SK3 AEC-Q101 DS36907 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBR10U45D1Q Green 10A SBR SUPER BARRIER RECTIFIER Product Summary VRRM V IO (A) 45 10 Features and Benefits VF MAX(V) @+25°C IR MAX(mA) @ +25°C 0.57 0.3 • • • NEW PRODUCT Description and Applications • This Super Barrier Rectifier (SBR) diode has been designed to meet


    Original     		SBR10U45D1Q DS36131 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBR15U100CTLQ 15A SBR SUPER BARRIER RECTIFIER Green NEW PRODUCT Product Summary VRRM V 100 IO (A) 15 VF MAX (V) @+25°C 0.8 Features and Benefits •  IR MAX (mA) @+25°C 0.1 capability than schottky diodes ensuring more rugged and  Description and Applications


    Original     		SBR15U100CTLQ DS36130 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBR1045D1Q 10A SBR SUPER BARRIER RECTIFIER Product Summary VRRM V 45 IO (A) 10 Features VF MAX (V) @+25°C 0.58 •  IR MAX (mA) @+25°C 0.3 100% Avalanche Tested. Patented SBR technology provides a superior avalanche capability than schottky diodes ensuring more rugged and


    Original     		SBR1045D1Q AEC-Q101 DS36362 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBR15U100CTLQ 15A SBR SUPER BARRIER RECTIFIER Green NEW PRODUCT Product Summary Features and Benefits VRRM V IO (A) VF MAX (V) @+25°C IR MAX (mA) @+25°C 100 15 0.8 0.1 • • 100% Avalanche Tested Patented SBR technology provides a superior avalanche


    Original     		SBR15U100CTLQ DS36130 PDF